公开(公告)号：US20140376291A1

公开(公告)日：2014-12-25

申请号：US14479857

申请日：2014-09-08

申请人： Ideal Power, Inc.

发明人： Richard A. Blanchard ,  William C. Alexander

IPC分类号： H01L29/737 ,  H01L29/16 ,  H01L29/08 ,  H02M1/088

CPC分类号： H02M3/158 ,  H01L27/0755 ,  H01L27/0823 ,  H01L27/0828 ,  H01L29/0619 ,  H01L29/0649 ,  H01L29/0804 ,  H01L29/0817 ,  H01L29/0821 ,  H01L29/1004 ,  H01L29/16 ,  H01L29/1604 ,  H01L29/41708 ,  H01L29/42304 ,  H01L29/73 ,  H01L29/732 ,  H01L29/7375 ,  H01L29/7393 ,  H01L29/7395 ,  H02M1/088 ,  H02M3/1582 ,  H02M7/797 ,  H02M11/00 ,  H03K3/012 ,  H03K17/60 ,  H03K17/66 ,  H03K17/687

摘要： Methods, systems, circuits, and devices for power-packet-switching power converters using bidirectional bipolar transistors (BTRANs) for switching. Four-terminal three-layer BTRANs provide substantially identical operation in either direction with forward voltages of less than a diode drop. BTRANs are fully symmetric merged double-base bidirectional bipolar opposite-faced devices which operate under conditions of high non-equilibrium carrier concentration, and which can have surprising synergies when used as bidirectional switches for power-packet-switching power converters. BTRANs are driven into a state of high carrier concentration, making the on-state voltage drop very low.

公开(公告)号：US20140375287A1

公开(公告)日：2014-12-25

申请号：US14313960

申请日：2014-06-24

申请人： Ideal Power, Inc.

发明人： Richard A. Blanchard ,  William C. Alexander

IPC分类号： H02M3/158 ,  H01L29/739 ,  H03K17/66

CPC分类号： H02M3/158 ,  H01L27/0755 ,  H01L27/0823 ,  H01L27/0828 ,  H01L29/0619 ,  H01L29/0649 ,  H01L29/0804 ,  H01L29/0817 ,  H01L29/0821 ,  H01L29/1004 ,  H01L29/16 ,  H01L29/1604 ,  H01L29/41708 ,  H01L29/42304 ,  H01L29/73 ,  H01L29/732 ,  H01L29/7375 ,  H01L29/7393 ,  H01L29/7395 ,  H02M1/088 ,  H02M3/1582 ,  H02M7/797 ,  H02M11/00 ,  H03K3/012 ,  H03K17/60 ,  H03K17/66 ,  H03K17/687

摘要： Methods, systems, circuits, and devices for power-packet-switching power converters using bidirectional bipolar transistors (BTRANs) for switching. Four-terminal three-layer BTRANs provide substantially identical operation in either direction with forward voltages of less than a diode drop. BTRANs are fully symmetric merged double-base bidirectional bipolar opposite-faced devices which operate under conditions of high non-equilibrium carrier concentration, and which can have surprising synergies when used as bidirectional switches for power-packet-switching power converters. BTRANs are driven into a state of high carrier concentration, making the on-state voltage drop very low.

摘要翻译： 用于使用双向双极晶体管（BTRAN）进行开关的功率分组开关电源转换器的方法，系统，电路和器件。 四端子三层BTRAN在任一方向提供基本上相同的操作，正向电压小于二极管压降。 BTRAN是在非平衡载流子浓度高的条件下工作的完全对称的双对称双基极双极相对装置，当用作功率分组开关功率转换器的双向开关时，它可以具有惊人的协同作用。 BTRAN被驱动到高载流子浓度的状态，使得导通电压下降很低。

公开(公告)号：US20140319911A1

公开(公告)日：2014-10-30

申请号：US14265300

申请日：2014-04-29

申请人： Ideal Power, Inc.

发明人： William C. Alexander

IPC分类号： H02J7/35

CPC分类号： H02J9/061 ,  H02J7/35 ,  H02J9/062 ,  H02J9/08 ,  Y02B10/72 ,  Y02E10/566 ,  Y02E10/766 ,  Y10T307/336 ,  Y10T307/68

摘要： Systems and methods where a power-packet-switching converter is used to interface a synchronous AC connection (e.g. to the utility power grid, or to a microgrid) to a DC source (e.g. a battery bank, or possibly a photovoltaic cell bank) and to a non-synchronous AC power source (e.g. a wind turbine or a motor-generator). The power-packet-switching converter not only provides voltage conversion and other functions (e.g. DC to AC, AC-AC with frequency change, 2-phase to 3-phase, power factor correction etc.), but also provides phase correction to convert asynchronous AC to synchronous AC.

摘要翻译： 使用功率分组交换转换器将同步AC连接（例如，公用电网或微电网）连接到DC源（例如电池组或可能的光伏电池组）的系统和方法，以及 到非同步AC电源（例如风力涡轮机或电动发电机）。 电源分组交换转换器不仅提供电压转换和其他功能（例如直流到交流，交流电，频率变化，二相到三相，功率因数校正等），还提供相位校正以转换 异步AC到同步AC。

公开(公告)号：US20140036554A1

公开(公告)日：2014-02-06

申请号：US13958135

申请日：2013-08-02

申请人： Ideal Power Inc.

发明人： William C. Alexander

IPC分类号： H02M5/44

CPC分类号： H02M5/44 ,  H02M5/225 ,  H02M7/4807 ,  H02M7/4826 ,  H02M2001/0009 ,  H02M2007/4815 ,  Y02B70/1441

摘要： An architecture for current-modulating power-handling circuits, such as power converters, where a small saturating inductance is used to obtain a pulse edge when the main current value crosses zero.

摘要翻译： 用于电流调制功率处理电路的架构，例如功率转换器，其中当主电流值跨越零时，使用小的饱和电感来获得脉冲边沿。

公开(公告)号：US10418471B2

公开(公告)日：2019-09-17

申请号：US15486921

申请日：2017-04-13

申请人： Ideal Power, Inc.

发明人： William C. Alexander ,  Richard A. Blanchard

IPC分类号： H01L29/747 ,  H01L29/40 ,  H01L29/423 ,  H01L29/732 ,  H01L29/06 ,  H01L29/10 ,  H03K17/66 ,  H01L29/70

摘要： Dual-base two-sided bipolar power transistors which use an insulated field plate to separate the emitter/collector diffusions from the nearest base contact diffusion. This provides a surprising improvement in turn-off performance, and in breakdown voltage.

公开(公告)号：US20180226254A1

公开(公告)日：2018-08-09

申请号：US15794418

申请日：2017-10-26

申请人： Ideal Power Inc.

发明人： Richard A. Blanchard ,  William C. Alexander

IPC分类号： H01L21/265 ,  H03K17/66 ,  H01L29/08 ,  H01L21/225 ,  H01L21/283 ,  H01L29/739 ,  H01L29/737 ,  H01L29/732 ,  H01L29/66 ,  H01L29/16 ,  H01L21/18 ,  H01L29/06 ,  H01L21/78 ,  H01L21/683 ,  H01L21/324 ,  H01L21/306 ,  H01L21/304 ,  H01L29/423

CPC分类号： H01L21/265 ,  H01L21/187 ,  H01L21/2252 ,  H01L21/283 ,  H01L21/304 ,  H01L21/30625 ,  H01L21/324 ,  H01L21/6835 ,  H01L21/6836 ,  H01L21/78 ,  H01L29/0619 ,  H01L29/0821 ,  H01L29/1604 ,  H01L29/4236 ,  H01L29/66348 ,  H01L29/732 ,  H01L29/7375 ,  H01L29/7397 ,  H01L2221/68304 ,  H01L2221/68327 ,  H03K17/66

摘要： Methods and systems for double-sided semiconductor device fabrication. Devices having multiple leads on each surface can be fabricated using a high-temperature-resistant handle wafer and a medium-temperature-resistant handle wafer. Dopants can be introduced on both sides shortly before a single long high-temperature diffusion step diffuses all dopants to approximately equal depths on both sides. All high-temperature processing occurs with no handle wafer or with a high-temperature handle wafer attached. Once a medium-temperature handle wafer is attached, no high-temperature processing steps occur. High temperatures can be considered to be those which can result in damage to the device in the presence of aluminum-based metallizations.

公开(公告)号：US09899932B2

公开(公告)日：2018-02-20

申请号：US14827730

申请日：2015-08-17

申请人： Ideal Power Inc.

发明人： William C. Alexander

IPC分类号： H02M5/293 ,  H02M3/335 ,  H02M5/10 ,  H02M3/158 ,  H02M5/22 ,  H02M7/797 ,  H02M5/297 ,  H02M7/48

CPC分类号： H02M5/293 ,  H02M3/1582 ,  H02M3/33584 ,  H02M5/10 ,  H02M5/225 ,  H02M5/297 ,  H02M7/4807 ,  H02M7/797 ,  H02M2007/4815 ,  Y02B70/1441

摘要： Methods and systems for transforming electric power between two or more portals. Any or all portals can be DC, single phase AC, or multi-phase AC. Conversion is accomplished by a plurality of bi-directional conducting and blocking semiconductor switches which alternately connect an inductor and parallel capacitor between said portals, such that energy is transferred into the inductor from one or more input portals and/or phases, then the energy is transferred out of the inductor to one or more output portals and/or phases, with said parallel capacitor facilitating “soft” turn-off, and with any excess inductor energy being returned back to the input. Soft turn-on and reverse recovery is also facilitated. Said bi-directional switches allow for two power transfers per inductor/capacitor cycle, thereby maximizing inductor/capacitor utilization as well as providing for optimum converter operation with high input/output voltage ratios. Control means coordinate the switches to accomplish the desired power transfers.

公开(公告)号：US09787304B2

公开(公告)日：2017-10-10

申请号：US14945097

申请日：2015-11-18

申请人： Ideal Power Inc.

发明人： William C. Alexander ,  Richard A. Blanchard

IPC分类号： H03K17/74 ,  H01L29/872 ,  H01L29/861 ,  H03K17/16

CPC分类号： H03K17/74 ,  H01L29/1095 ,  H01L29/7395 ,  H01L29/8613 ,  H01L29/872 ,  H03K17/16

摘要： Methods and systems for active charge control diodes with improved reverse recovery characteristics. An extra control terminal is added on the side of a diode nearest to its p-n junction. The control terminal connects to a control region which extends from the drift region to the cathode surface and which is most preferably separated from the cathode region by an insulated trench. During turn-off, the control terminal is most preferably driven negative relative to the cathode just before reversing the polarity of the applied external voltage.

公开(公告)号：US09787298B2

公开(公告)日：2017-10-10

申请号：US15267085

申请日：2016-09-15

申请人： Ideal Power Inc.

发明人： William C. Alexander ,  Richard A. Blanchard

IPC分类号： H01L29/73 ,  H03K17/06 ,  H01L29/16 ,  H01L29/735 ,  H01L27/06 ,  H01L29/10 ,  H01L29/08 ,  H03K17/66 ,  H03K17/68 ,  H01L29/747

CPC分类号： H01L29/0619 ,  H01L27/0694 ,  H01L29/0808 ,  H01L29/0821 ,  H01L29/1004 ,  H01L29/1008 ,  H01L29/16 ,  H01L29/66295 ,  H01L29/732 ,  H01L29/735 ,  H01L29/7393 ,  H01L29/747 ,  H03K17/06 ,  H03K17/08112 ,  H03K17/66 ,  H03K17/665 ,  H03K17/68 ,  H03K2217/0054 ,  H03K2217/0063 ,  H03K2217/0072

摘要： Methods and systems for operating a double-base bidirectional power bipolar transistor. Two timing phases are used to transition into turn-off: one where each base is shorted to its nearest emitter/collector region, and a second one where negative drive is applied to the emitter-side base to reduce the minority carrier population in the bulk substrate. A diode prevents reverse turn-on while negative base drive is being applied.

公开(公告)号：US09742395B2

公开(公告)日：2017-08-22

申请号：US15233306

申请日：2016-08-10

申请人： Ideal Power Inc.

发明人： William C. Alexander ,  Richard A. Blanchard

IPC分类号： H03K17/66 ,  H01L29/74 ,  H01L29/747 ,  H01L29/872 ,  H01L29/73 ,  H01L29/08 ,  H01L29/10 ,  H03K17/60 ,  H01L29/732 ,  H01L29/735 ,  H01L27/06 ,  H02M1/08

CPC分类号： H03K17/66 ,  H01L27/0694 ,  H01L29/0804 ,  H01L29/0821 ,  H01L29/1004 ,  H01L29/1095 ,  H01L29/7302 ,  H01L29/732 ,  H01L29/735 ,  H01L29/7412 ,  H01L29/7416 ,  H01L29/747 ,  H01L29/872 ,  H02M1/08 ,  H02M7/219 ,  H02M2007/2195 ,  H03K17/60 ,  H03K17/602 ,  H03K17/687 ,  H03K2217/0054

摘要： The present application teaches, inter alia, methods and circuits for operating a B-TRAN (double-base bidirectional bipolar junction transistor). Exemplary base drive circuits provide high-impedance drive to the base contact region on the side of the device instantaneously operating as the collector. (The B TRAN is controlled by applied voltage rather than applied current.) Current signals operate preferred implementations of drive circuits to provide diode-mode turn-on and pre-turnoff operation, as well as a hard ON state with low voltage drop (the “transistor-ON” state). In some preferred embodiments, self-synchronizing rectifier circuits provide adjustable low voltage for gate drive circuits. In some preferred embodiments, the base drive voltage used to drive the c-base region (on the collector side) is varied while base current at that terminal is monitored, so no more base current than necessary is applied. This solves the difficult challenge of optimizing base drive in a B-TRAN.