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公开(公告)号：US6005372A
公开(公告)日：1999-12-21
申请号：US980280
申请日：1997-11-28
摘要： A vehicle generator controller for regulating the output voltage from a generator which charges a battery mounted on a vehicle comprises battery voltage detection means for detecting the drop of a battery voltage, a switching element for controlling the field current of the generator, gradual increase control means for gradually increasing the current generated by the generator by gradually increasing the switching element by intermittently operating the switching element when the battery voltage drops and gradual increase prohibition means for canceling the gradual increase control at the beginning of the drop of the battery voltage and gradually increases the field current after the conducting ratio of the switching element is set to 100%. With this arrangement, the vehicle generator controller suppresses a torque shock caused in response to the turn-on of an electric load as well as sufficiently suppresses the drop of a battery voltage.
摘要翻译： 用于调节来自安装在车辆上的电池对发电机进行充电的输出电压的车辆发电机控制器包括用于检测电池电压下降的电池电压检测装置，用于控制发电机的励磁电流的开关元件，逐渐增加控制装置 用于通过在电池电压下降时通过间歇地操作开关元件逐渐增加开关元件而逐渐增加发电机的电流，并且逐渐增加禁止装置，用于在电池电压降低开始时取消逐渐增加控制，并逐渐增加 将开关元件的导通比之后的励磁电流设定为100％。 利用这种布置，车辆发电机控制器抑制响应于电负载的接通而引起的转矩冲击，并且充分地抑制电池电压的下降。
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公开(公告)号：US5900721A
公开(公告)日：1999-05-04
申请号：US843064
申请日：1997-04-11
CPC分类号： H02P9/10
摘要： A control device for a vehicle A.C. generator which is used to supply a vehicle load such as a battery. The control device includes a semiconductor switching element for controlling a field current in a field winding of the generator. The control device also includes a ground pattern conductor arranged between a power source terminal connecting the semiconductor switching element and the load and a control signal input terminal for inputting a control signal to the semiconductor switching element. The ground pattern conductor is further connected to a ground terminal of the semiconductor switching element. This arrangement affords protection from short circuiting of the power source terminal and the control terminal.
摘要翻译： 一种用于提供诸如电池的车辆负载的车辆交流发电机的控制装置。 控制装置包括用于控制发电机的励磁绕组中的励磁电流的半导体开关元件。 控制装置还包括布置在连接半导体开关元件的电源端子和负载之间的接地图案导体和用于向半导体开关元件输入控制信号的控制信号输入端子。 接地图案导体还连接到半导体开关元件的接地端子。 这种布置能够防止电源端子和控制端子短路。
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公开(公告)号：US5656841A
公开(公告)日：1997-08-12
申请号：US545398
申请日：1995-10-19
IPC分类号： H01L23/522 , H01L21/768 , H01L21/8238 , H01L27/092 , H01L29/78 , H01L27/11
CPC分类号： H01L21/768 , H01L2924/0002 , Y10S257/903
摘要： In a manufacturing method of a semiconductor device, a gate insulating film is grown in an active region. Thereafter, an N-type polysilicon film is formed on the gate insulating film and is patterned so that a gate electrode and a polysilicon electrode are formed. Next, arsenic ions are implanted onto entire faces of the gate and polysilicon electrodes so that a source-drain region is formed on a substrate. An interlayer insulating film is then formed on an entire face of the source-drain region, etc. Thereafter, a contact hole is formed on a drain region in a position in which the drain region partially overlaps the polysilicon electrode. A surface portion of the polysilicon electrode is exposed into the contact hole. Thereafter, phosphoric ions are implanted through the contact hole with the interlayer insulating film as a mask. The implanted ions are thermally processed to activate these implanted ions. Thereafter, metal wiring is formed. Thus, resistance of a common contact having s three-dimensional structure is reduced.
摘要翻译： 在半导体器件的制造方法中，在有源区域中生长栅极绝缘膜。 此后，在栅极绝缘膜上形成N型多晶硅膜，并形成栅电极和多晶硅电极。 接下来，将砷离子注入到栅极和多晶硅电极的整个表面上，从而在衬底上形成源极 - 漏极区域。 然后在源极 - 漏极区域的整个表面上形成层间绝缘膜等。此后，在漏极区域与多晶硅电极部分重叠的位置处的漏极区域上形成接触孔。 多晶硅电极的表面部分露出到接触孔中。 此后，通过与层间绝缘膜作为掩模的接触孔注入磷酸根离子。 将注入的离子热处理以激活这些注入的离子。 此后，形成金属布线。 因此，具有三维结构的普通接触的电阻降低。
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公开(公告)号：US5618068A
公开(公告)日：1997-04-08
申请号：US223510
申请日：1994-04-06
CPC分类号： E05B81/20 , E05B81/66 , E05B81/80 , E05B81/82 , E05B83/40 , E05B2047/0059 , E05B81/68 , E05B83/36 , Y10T292/1047 , Y10T292/1082
摘要： A door lock apparatus with automatic door closing mechanism comprises a latch engaging with a striker secured to a vehicle body, an automatic door closing motor for over-rotating the latch at its half-latched position beyond its full-latched position while the motor rightly rotates, a switch adapated to turn to continuously ON when the latch is between the half-latched and full-latched positions and turn to OFF when the latch is at other position than between the half-latched and full-latched positions, and a controller for rightly rotating the motor when door closing operation turns the switch from its OFF condition to ON condition and reversely rotating motor when the switch turns from ON to OFF.
摘要翻译： 具有自动关门机构的门锁装置包括与固定在车身上的撞针接合的闩锁，一个自动闭门电动机，用于使闩锁在其半锁定位置超过其全锁定位置使电动机正转 当闩锁在半锁存和全锁存位置之间时，适配成持续导通的开关，并且当闩锁处于位于半锁存位置和全锁定位置之间的其他位置时，该开关变为OFF，以及用于 当开关从ON状态转为OFF时，关闭操作将开关从OFF状态转为ON状态，并反向旋转电机，正确旋转电机。
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公开(公告)号：US5316960A
公开(公告)日：1994-05-31
申请号：US78409
申请日：1993-06-17
申请人： Hirofumi Watanabe , Noriyuki Terao
发明人： Hirofumi Watanabe , Noriyuki Terao
IPC分类号： H01L21/84 , H01L21/265
CPC分类号： H01L21/84 , Y10S148/137 , Y10S148/15
摘要： A method for manufacturing a C-MOS thin film transistor device has the steps of implanting the n-type impurity only in the upper layer portion of the source-drain section of the n-channel transistor by controlling implantation energy of the n-type impurity; implanting the p-type impurity in the source-drain section and the gate electrode of the p-channel transistor, and the source-drain section and the gate electrode of the n-channel transistor by controlling implantation energy of the p-type impurity; and activating the implanted n-type and p-type impurities in the source-drain section of the n-channel transistor, and activating the implanted p-type impurity in the source-drain section and the gate electrode of the p-channel transistor and gate electrode of the n-channel transistor. The n-type and the p-type may be respectively changed to the p-type and the n-type in the above construction.
摘要翻译： 用于制造C-MOS薄膜晶体管器件的方法具有以下步骤：通过控制n型杂质的注入能量将n型杂质仅植入在n沟道晶体管的源极 - 漏极部分的上层部分中 ; 通过控制p型杂质的注入能量，将p型杂质注入到p沟道晶体管的源极 - 漏极部分和栅极电极以及n沟道晶体管的源极 - 漏极部分和栅极电极中; 以及激活n沟道晶体管的源极 - 漏极部分中注入的n型和p型杂质，以及激活p沟道晶体管的源 - 漏部分和栅电极中注入的p型杂质，以及 n沟道晶体管的栅电极。 在上述结构中，n型和p型可以分别变为p型和n型。
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86.发明授权
公开(公告)号：US4914374A
公开(公告)日：1990-04-03
申请号：US306421
申请日：1989-02-06
申请人： Shiro Iwatani , Hirofumi Watanabe
发明人： Shiro Iwatani , Hirofumi Watanabe
摘要： A voltage regulator circuit for an AC generator is disclosed which comprises a holding circuit for holding the power transistor, which is coupled in series with the field winding of the generator, in the non-conductive state after the Zener diode of the voltage detecting circuit is turned off, and a releasing circuit for releasing the holding action of the holding circuit periodically at a predetermined interval. The holding circuit includes a pair of transistors turned on and off in phase and in antiphase with the power transistor, respectively, the transistor in antiphase, when conductive, holding the power transistor in the non-conductive state. The releasing circuit, on the other hand, includes a pulse generator for generating trigger pulses periodically at a predetermined interval, and a transistor which is turned on by these trigger pulses to turn off the transistor in antiphase holding the power transistor in the non-conductive state. The interruption frequency of the excitation current, i.e., the frequency of turning on and off of the power transistor, is equal to the frequency of releasing actions of the releasing circuit occurring at said predetermined interval.
摘要翻译： 公开了一种用于交流发电机的电压调节器电路，其包括保持电路，用于在电压检测电路的齐纳二极管为非导通状态之后，将功率晶体管与发电机的励磁绕组串联耦合， 以及用于以预定间隔周期性地释放保持电路的保持动作的释放电路。 保持电路包括分别与功率晶体管相位导通和截止的晶体管，当导通时，晶体管保持功率晶体管处于非导通状态。 另一方面，释放电路包括用于以预定间隔周期性地产生触发脉冲的脉冲发生器和通过这些触发脉冲导通的晶体管，以将反相中的晶体管保持在不导通的功率晶体管 州。 励磁电流的中断频率，即功率晶体管的导通和截止频率等于以所述预定间隔发生的释放电路的释放动作的频率。
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公开(公告)号：US10078010B2
公开(公告)日：2018-09-18
申请号：US14978172
申请日：2015-12-22
申请人： Katsuhiko Aisu , Hirofumi Watanabe , Takaaki Negoro , Yoshinori Ueda , Yasukazu Nakatani , Kazuhiro Yoneda , Katsuyuki Sakurano
发明人： Katsuhiko Aisu , Hirofumi Watanabe , Takaaki Negoro , Yoshinori Ueda , Yasukazu Nakatani , Kazuhiro Yoneda , Katsuyuki Sakurano
CPC分类号： G01J1/44 , G01J2001/444 , G01J2001/4473 , H04N5/361 , H04N5/3655 , H04N5/378
摘要： A photoelectric conversion device includes a pixel cell including a phototransistor, a reference cell including a reference transistor having a temperature characteristic identical to that of the phototransistor and having a fixed electrical state, an analog-to-digital converter that converts an analog output of the pixel cell into a digital output, a correction amount computation unit that computes a correction amount for the digital output of the analog-to-digital converter based on an output of the reference cell and a reference value, and a correction unit that corrects the digital output of the analog-to-digital converter based on the correction amount.
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88.发明授权Sense circuit and method of operation thereof and photoelectric conversion array connected to inverting input of sense circuit 有权感应电路及其操作方法以及连接到感测电路的反相输入的光电转换阵列公开(公告)号：US09571770B2
公开(公告)日：2017-02-14
申请号：US13745197
申请日：2013-01-18
申请人： Yutaka Hayashi , Toshitaka Ota , Yasushi Nagamune , Hirofumi Watanabe , Kazuhiro Yoneda , Katsuhiko Aisu , Takaaki Negoro
发明人： Yutaka Hayashi , Toshitaka Ota , Yasushi Nagamune , Hirofumi Watanabe , Kazuhiro Yoneda , Katsuhiko Aisu , Takaaki Negoro
IPC分类号： H04N5/378 , H01L27/144
CPC分类号： H04N5/378 , H01L27/144
摘要： A sense circuit includes a differential amplifier circuit including an inverting input section, a non-inverting input section and an output section, an electrical capacitor connected between the inverting input section and the output section, and a field effect transistor including a source, a drain, and a gate. One of the source and the drain is connected to the inverting input section, and the other of the source and the drain is connected to the output section. A reference potential is supplied to the non-inverting input section, and an output section of a photoelectric conversion cell having an added switching function is connected to the inverting input section.
摘要翻译： 感测电路包括差分放大器电路，其包括反相输入部分，非反相输入部分和输出部分，连接在反相输入部分和输出部分之间的电容器，以及场效应晶体管，其包括源极，漏极 ，和一个门。 源极和漏极之一连接到反相输入部分，源极和漏极中的另一个连接到输出部分。 参考电位被提供给非反相输入部分，并且具有增加的开关功能的光电转换单元的输出部分连接到反相输入部分。
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公开(公告)号：US09362328B2
公开(公告)日：2016-06-07
申请号：US13793445
申请日：2013-03-11
IPC分类号： H01L27/146 , H01L29/73 , H01L31/11 , H01L29/739
CPC分类号： H01L27/14681 , H01L27/14683 , H01L29/73 , H01L29/739 , H01L31/1105
摘要： The invention relates to a semiconductor device having a vertical transistor bipolar structure of emitter, base, and collector formed in this order from a semiconductor substrate surface in a depth direction. The semiconductor device includes an electrode embedded from the semiconductor substrate surface into the inside and insulated by an oxide film. In the surface of the substrate, a first-conductivity-type first semiconductor region, a second-conductivity-type second semiconductor region, and a first-conductivity-type third semiconductor region are arranged, from the surface side, inside a semiconductor device region surrounded by the electrode and along the electrode with the oxide film interposed therebetween, the second semiconductor region located below the first semiconductor region, the third semiconductor region located below the second semiconductor region. The electrode is insulated from the first to third semiconductor regions, and current gain is variable through application of voltage to the electrode.
摘要翻译： 本发明涉及一种半导体器件，其具有从半导体衬底表面沿深度方向依次形成的发射极，基极和集电极的垂直晶体管双极结构。 半导体器件包括从半导体衬底表面嵌入内部并由氧化物膜绝缘的电极。 在基板的表面中，从第一导电型第一半导体区域，第二导电型第二半导体区域和第一导电型第三半导体区域的表面侧配置在半导体器件区域 被电极围绕并且沿着电极，氧化膜插入其间，位于第一半导体区域下方的第二半导体区域，位于第二半导体区域下方的第三半导体区域。 电极与第一至第三半导体区域绝缘，电流增益可通过向电极施加电压而变化。
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公开(公告)号：US09318242B2
公开(公告)日：2016-04-19
申请号：US13821277
申请日：2011-09-05
CPC分类号： F25J1/0022 , H01B12/00 , H01B12/16 , H02G15/34 , Y02E40/648
摘要： In a thermally insulated double pipe, a structure is provided in which an inner pipe may be prevented from being appreciably offset relative to an outer pipe due to thermal contraction. The structure includes an inner pipe 101, within which a superconducting cable is mounted, an outer pipe 103 within which the inner pipe is housed, with the inner and outer pipes constituting a thermally insulated double pipe, and an inner pipe support member 104 supporting the inner pipe. The inner pipe support member 104 is secured to the inner and outer pipes.
摘要翻译： 在隔热双管中，提供了一种结构，其中可以防止内管由于热收缩而相对于外管明显地偏移。 该结构包括其中安装有超导电缆的内管101，容纳有内管的外管103，内管和外管构成绝热双管，以及支撑该内管的内管支撑构件104 内管。 内管支撑构件104固定到内管和外管。
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