公开(公告)号：US20100276798A1

公开(公告)日：2010-11-04

申请号：US12805113

申请日：2010-07-13

申请人： Yukihiro Satou ,  Toshiyuki Hata

发明人： Yukihiro Satou ,  Toshiyuki Hata

IPC分类号： H01L23/498

CPC分类号： H01L24/49 ,  H01L23/3107 ,  H01L23/3142 ,  H01L23/4952 ,  H01L23/49524 ,  H01L23/49562 ,  H01L24/06 ,  H01L24/37 ,  H01L24/40 ,  H01L24/45 ,  H01L24/48 ,  H01L24/97 ,  H01L29/7827 ,  H01L2224/02166 ,  H01L2224/04034 ,  H01L2224/04042 ,  H01L2224/05124 ,  H01L2224/05155 ,  H01L2224/05553 ,  H01L2224/05624 ,  H01L2224/05639 ,  H01L2224/05644 ,  H01L2224/0603 ,  H01L2224/37124 ,  H01L2224/40091 ,  H01L2224/40245 ,  H01L2224/40247 ,  H01L2224/45014 ,  H01L2224/45015 ,  H01L2224/45124 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/4846 ,  H01L2224/48472 ,  H01L2224/48724 ,  H01L2224/48739 ,  H01L2224/48744 ,  H01L2224/4903 ,  H01L2224/49051 ,  H01L2224/49111 ,  H01L2224/4912 ,  H01L2224/49171 ,  H01L2224/49175 ,  H01L2224/49431 ,  H01L2224/73221 ,  H01L2224/8385 ,  H01L2224/85 ,  H01L2224/97 ,  H01L2924/00014 ,  H01L2924/00015 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/01022 ,  H01L2924/01023 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/10161 ,  H01L2924/12042 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/181 ,  H01L2924/1811 ,  H01L2924/2075 ,  H01L2924/20752 ,  H01L2924/20753 ,  H01L2924/20754 ,  H01L2924/20755 ,  H01L2924/20756 ,  H01L2924/20757 ,  H01L2924/20758 ,  H01L2924/20759 ,  H01L2924/2076 ,  H01L2924/00 ,  H01L2924/00012

摘要： A semiconductor device includes a header, a semiconductor chip fixed to the header constituting a MOSFET, and a sealing body of insulating resin which covers the semiconductor chip, the header and the like, and further includes a drain lead contiguously formed with the header and projects from one side surface of the sealing body, and a source lead and a gate lead which project in parallel from one side surface of the sealing body, and wires which are positioned in the inside of the sealing body and connect electrodes on an upper surface of the semiconductor chip and the source lead and the gate lead, with a gate electrode pad arranged at a position from the gate lead and the source lead farther than a source electrode pad.

公开(公告)号：US07812464B2

公开(公告)日：2010-10-12

申请号：US12149183

申请日：2008-04-29

申请人： Toshinori Hirashima ,  Munehisa Kishimoto ,  Toshiyuki Hata ,  Yasushi Takahashi

发明人： Toshinori Hirashima ,  Munehisa Kishimoto ,  Toshiyuki Hata ,  Yasushi Takahashi

IPC分类号： H01L23/28 ,  H01L27/088

CPC分类号： H01L21/561 ,  H01L21/565 ,  H01L23/4951 ,  H01L23/49562 ,  H01L24/81 ,  H01L2224/05001 ,  H01L2224/05022 ,  H01L2224/05572 ,  H01L2224/16245 ,  H01L2224/32245 ,  H01L2224/73253 ,  H01L2224/81801 ,  H01L2924/00014 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01019 ,  H01L2924/01023 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01322 ,  H01L2924/014 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/181 ,  H01L2924/00 ,  H01L2224/05541 ,  H01L2224/05005 ,  H01L2224/05624 ,  H01L2224/05099 ,  H01L2924/00012

摘要： A semiconductor device and method having high output and having reduced external resistance is reduced and improved radiating performance. A MOSFET (70) has a connecting portion for electrically connecting a surface electrode of a semiconductor pellet and a plurality of inner leads, a resin encapsulant (29), a plurality of outer leads (37), (38) protruding in parallel from the same lateral surface of the resin encapsulant (29) and a header (28) bonded to a back surface of the semiconductor pellet and having a header protruding portion (28c) protruding from a lateral surface of the resin encapsulant (29) opposite to the lateral surface from which the outer leads protrude, wherein the header (28) has an exposed surface (28b) exposed from the resin encapsulant (29); the outer leads (37), (38) are bent; and the exposed of the outer leads (37), (38) are provided at substantially the same height.

摘要翻译： 具有高输出并且具有降低的外部电阻的半导体器件和方法被降低并且改善了辐射性能。 MOSFET（70）具有用于电连接半导体芯片的表面电极和多个内部引线的连接部分，树脂密封剂（29），与外部引线平行突出的多个外部引线（37），（38） 树脂密封剂（29）的相同的侧表面和接合到半导体芯片的背面的集管（28），并且具有从树脂密封剂（29）的与侧面相反的侧表面突出的集管突出部分（28c） 外引线突出的表面，其中集管（28）具有从树脂密封剂（29）暴露的暴露表面（28b）; 外引线（37），（38）弯曲; 并且暴露的外引线（37），（38）设置在基本相同的高度。

公开(公告)号：US07800215B2

公开(公告)日：2010-09-21

申请号：US12453043

申请日：2009-04-28

申请人： Yukihiro Satou ,  Toshiyuki Hata

发明人： Yukihiro Satou ,  Toshiyuki Hata

IPC分类号： H01L23/498

CPC分类号： H01L24/49 ,  H01L23/3107 ,  H01L23/3142 ,  H01L23/4952 ,  H01L23/49524 ,  H01L23/49562 ,  H01L24/06 ,  H01L24/37 ,  H01L24/40 ,  H01L24/45 ,  H01L24/48 ,  H01L24/97 ,  H01L29/7827 ,  H01L2224/02166 ,  H01L2224/04034 ,  H01L2224/04042 ,  H01L2224/05124 ,  H01L2224/05155 ,  H01L2224/05553 ,  H01L2224/05624 ,  H01L2224/05639 ,  H01L2224/05644 ,  H01L2224/0603 ,  H01L2224/37124 ,  H01L2224/40091 ,  H01L2224/40245 ,  H01L2224/40247 ,  H01L2224/45014 ,  H01L2224/45015 ,  H01L2224/45124 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/4846 ,  H01L2224/48472 ,  H01L2224/48724 ,  H01L2224/48739 ,  H01L2224/48744 ,  H01L2224/4903 ,  H01L2224/49051 ,  H01L2224/49111 ,  H01L2224/4912 ,  H01L2224/49171 ,  H01L2224/49175 ,  H01L2224/49431 ,  H01L2224/73221 ,  H01L2224/8385 ,  H01L2224/85 ,  H01L2224/97 ,  H01L2924/00014 ,  H01L2924/00015 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/01022 ,  H01L2924/01023 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/10161 ,  H01L2924/12042 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/181 ,  H01L2924/1811 ,  H01L2924/2075 ,  H01L2924/20752 ,  H01L2924/20753 ,  H01L2924/20754 ,  H01L2924/20755 ,  H01L2924/20756 ,  H01L2924/20757 ,  H01L2924/20758 ,  H01L2924/20759 ,  H01L2924/2076 ,  H01L2924/00 ,  H01L2924/00012

摘要： A semiconductor device includes a header, a semiconductor chip fixed to the header constituting a MOSFET, and a sealing body of insulating resin which covers the semiconductor chip, the header and the like, and further includes a drain lead contiguously formed with the header and projects from one side surface of the sealing body, and a source lead and a gate lead which project in parallel from one side surface of the sealing body, and wires which are positioned in the inside of the sealing body and connect electrodes on an upper surface of the semiconductor chip and the source lead and the gate lead, with a gate electrode pad arranged at a position from the gate lead and the source lead farther than a source electrode pad.

摘要翻译： 一种半导体器件，包括：头部，固定到构成MOSFET的头部的半导体芯片;以及覆盖半导体芯片，插头等的绝缘树脂的密封体，还包括与插头连接地形成的漏极引线 从密封体的一个侧面，以及从密封体的一个侧面平行突出的源极引线和栅极引线，以及位于密封体的内部的电线， 半导体芯片和源极引线以及栅极引线，栅极电极焊盘布置在比栅极引线和源极引线更远离源极电极焊盘的位置。

公开(公告)号：US07728416B2

公开(公告)日：2010-06-01

申请号：US12155479

申请日：2008-06-05

申请人： Yukihiro Satou ,  Takeshi Otani ,  Hiroyuki Takahashi ,  Toshiyuki Hata ,  Ichio Shimizu

发明人： Yukihiro Satou ,  Takeshi Otani ,  Hiroyuki Takahashi ,  Toshiyuki Hata ,  Ichio Shimizu

IPC分类号： H01L23/495

CPC分类号： H01L24/97 ,  H01L23/3107 ,  H01L23/49548 ,  H01L23/49562 ,  H01L24/40 ,  H01L24/41 ,  H01L24/45 ,  H01L24/48 ,  H01L24/73 ,  H01L2224/05571 ,  H01L2224/05573 ,  H01L2224/16245 ,  H01L2224/32245 ,  H01L2224/40137 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/48465 ,  H01L2224/73207 ,  H01L2224/73221 ,  H01L2224/73253 ,  H01L2224/73255 ,  H01L2224/73265 ,  H01L2224/83801 ,  H01L2224/8385 ,  H01L2224/84801 ,  H01L2224/8485 ,  H01L2224/97 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01023 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01039 ,  H01L2924/01047 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/181 ,  H01L2224/83 ,  H01L2224/81 ,  H01L2924/00 ,  H01L2224/05599 ,  H01L2924/00012 ,  H01L2224/37099

摘要： A novel semiconductor device high in both heat dissipating property and connection reliability in mounting is to be provided. The semiconductor device comprises a semiconductor chip, a resin sealing member for sealing the semiconductor chip, a first conductive member connected to a first electrode formed on a first main surface of the semiconductor chip, and a second conductive member connected to a second electrode formed on a second main surface opposite to the first main surface of the semiconductor chip, the first conductive member being exposed from a first main surface of the resin sealing member, and the second conductive member being exposed from a second main surface opposite to the first main surface of the resin sealing member and also from side faces of the resin sealing member.

摘要翻译： 提供一种具有高散热性和安装连接可靠性的新型半导体器件。 半导体器件包括半导体芯片，用于密封半导体芯片的树脂密封构件，连接到形成在半导体芯片的第一主表面上的第一电极的第一导电构件和连接到形成在半导体芯片上的第二电极的第二导电构件 与半导体芯片的第一主表面相对的第二主表面，第一导电构件从树脂密封构件的第一主表面露出，并且第二导电构件从与第一主表面相对的第二主表面露出 树脂密封构件的侧面和树脂密封构件的侧面。

公开(公告)号：US07688478B2

公开(公告)日：2010-03-30

申请号：US10807806

申请日：2004-03-23

申请人： Toshiyuki Hata

发明人： Toshiyuki Hata

IPC分类号： H04N1/04

CPC分类号： H04N5/265

摘要： An image processing apparatus which processes input image signals in real time. A plurality of image signals are input via input terminals. An external storage device stores a plurality of kinds of procedures for processing to be performed on image signals. A JOG dial specifies at least two kinds of procedures among the stored plurality of kinds of procedures, and enables the specified procedures and a procedure between the specified procedures to be arbitrarily changed and specified. When the procedure between the specified procedures is specified using the JOG dial, a CPU generates the specified procedure by interpolating the specified procedures, and carries out real-time processing on image signals for corresponding channels among the image signals for the plurality of channels according to the generated specified procedure.

摘要翻译： 一种实时处理输入图像信号的图像处理装置。 经由输入端子输入多个图像信号。 外部存储装置存储用于对图像信号执行的处理的多种程序。 JOG拨盘指定存储的多种类型的过程中的至少两种过程，并且使指定的过程和指定过程之间的过程被任意地改变和指定。 当使用JOG拨盘指定指定的程序之间的过程时，CPU通过内插指定的过程来产生指定的过程，并根据多个通道的图像信号之间的相应通道的图像信号执行实时处理 生成的指定过程。

公开(公告)号：US20080315378A1

公开(公告)日：2008-12-25

申请号：US12155375

申请日：2008-06-03

申请人： Toshiyuki Hata ,  Takeshi Otani ,  Ichio Shimizu

发明人： Toshiyuki Hata ,  Takeshi Otani ,  Ichio Shimizu

IPC分类号： H01L23/495

CPC分类号： H01L24/33 ,  H01L23/49562 ,  H01L2224/1134 ,  H01L2224/131 ,  H01L2224/13144 ,  H01L2224/16245 ,  H01L2224/32245 ,  H01L2224/73253 ,  H01L2924/00013 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01015 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/12042 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/1433 ,  H01L2924/181 ,  H01L2924/014 ,  H01L2924/00014 ,  H01L2224/13099 ,  H01L2924/3512 ,  H01L2924/00 ,  H01L2924/00012

摘要： A semiconductor device has a sealing body formed of an insulating resin and a semiconductor chip positioned within the sealing body. A gate electrode and a source electrode are on a first main surface of the semiconductor chip and a back electrode (drain electrode) is on a second main surface thereof. An upper surface of a portion of a drain electrode plate that projects in a gull wing shape is exposed from the sealing body and a lower surface thereof is connected to the back electrode through an adhesive. A gate electrode plate projects in a gull wing shape on an opposite end side of the sealing body and is connected to the gate electrode within the sealing body. A source electrode plate projects in a gull wing shape on the opposite end side of the sealing body and is connected to the source electrode within the sealing body.

摘要翻译： 半导体器件具有由绝缘树脂和位于密封体内的半导体芯片形成的密封体。 栅电极和源电极位于半导体芯片的第一主表面上，背电极（漏电极）在其第二主表面上。 漏极电极板的以鸥翼形突出的部分的上表面从密封体露出，并且其下表面通过粘合剂连接到背电极。 栅电极板在密封体的相对端侧突出为鸥翼形，并且与密封体内的栅电极连接。 源电极板在密封体的相对端侧突出为鸥翼形，并且在密封体内与源电极连接。

公开(公告)号：US20080211082A1

公开(公告)日：2008-09-04

申请号：US12149183

申请日：2008-04-29

申请人： Toshinori Hirashima ,  Munehisa Kishimoto ,  Toshiyuki Hata ,  Yasushi Takahashi

发明人： Toshinori Hirashima ,  Munehisa Kishimoto ,  Toshiyuki Hata ,  Yasushi Takahashi

IPC分类号： H01L23/52

CPC分类号： H01L21/561 ,  H01L21/565 ,  H01L23/4951 ,  H01L23/49562 ,  H01L24/81 ,  H01L2224/05001 ,  H01L2224/05022 ,  H01L2224/05572 ,  H01L2224/16245 ,  H01L2224/32245 ,  H01L2224/73253 ,  H01L2224/81801 ,  H01L2924/00014 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01019 ,  H01L2924/01023 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01322 ,  H01L2924/014 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/181 ,  H01L2924/00 ,  H01L2224/05541 ,  H01L2224/05005 ,  H01L2224/05624 ,  H01L2224/05099 ,  H01L2924/00012

摘要： A semiconductor device and method having high output and having reduced external resistance is reduced and improved radiating performance. A MOSFET (70) has a connecting portion for electrically connecting a surface electrode of a semiconductor pellet and a plurality of inner leads, a resin encapsulant (29), a plurality of outer leads (37), (38) protruding in parallel from the same lateral surface of the resin encapsulant (29) and a header (28) bonded to a back surface of the semiconductor pellet and having a header protruding portion (28c) protruding from a lateral surface of the resin encapsulant (29) opposite to the lateral surface from which the outer leads protrude, wherein the header (28) has an exposed surface (28b) exposed from the resin encapsulant (29); the outer leads (37), (38) are bent; and the exposed of the outer leads (37), (38) are provided at substantially the same height.

公开(公告)号：US06479888B1

公开(公告)日：2002-11-12

申请号：US09502826

申请日：2000-02-11

申请人： Toshinori Hirashima ,  Munehisa Kishimoto ,  Toshiyuki Hata ,  Yasushi Takahashi

发明人： Toshinori Hirashima ,  Munehisa Kishimoto ,  Toshiyuki Hata ,  Yasushi Takahashi

IPC分类号： H01L23495

CPC分类号： H01L21/561 ,  H01L21/565 ,  H01L23/4951 ,  H01L23/49562 ,  H01L24/81 ,  H01L2224/05001 ,  H01L2224/05022 ,  H01L2224/05572 ,  H01L2224/16245 ,  H01L2224/32245 ,  H01L2224/73253 ,  H01L2224/81801 ,  H01L2924/00014 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01019 ,  H01L2924/01023 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01322 ,  H01L2924/014 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/181 ,  H01L2924/00 ,  H01L2224/05541 ,  H01L2224/05005 ,  H01L2224/05624 ,  H01L2224/05099 ,  H01L2924/00012

摘要： A semiconductor device having high output and a method of manufacturing the same are disclosed in which external resistance is reduced and radiating performance is improved. A MOSFET (70) comprises a plurality of inner leads electrically connected to a surface electrode of a semiconductor pellet having a field effect transistor on a principal surface thereof, a connecting portion for electrically connecting the surface electrode of the semiconductor pellet and the inner leads, a resin encapsulant (29) formed by encapsulating the semiconductor pellet with resin, a plurality of outer leads (37), (38) protruding in parallel from the same lateral surface of the resin encapsulant (29) and a header (28) bonded to a back surface of the semiconductor pellet and having a header protruding portion (28c) protruding from a lateral surface of the resin encapsulant (29) opposite to the lateral surface from which the outer leads protrude, wherein the header (28) has an exposed surface (28b) exposed from the resin encapsulant (29); the outer leads (37), (38) are bent; and the exposed of the outer leads (37), (38) are provided at substantially the same height.

摘要翻译： 公开了一种具有高输出的半导体器件及其制造方法，其中降低了外部电阻并提高了辐射性能。 MOSFET（70）包括电连接到其主表面上具有场效应晶体管的半导体芯片的表面电极的多个内部引线，用于将半导体芯片的表面电极和内部引线电连接的连接部分， 通过用树脂封装半导体颗粒而形成的树脂密封剂（29），从树脂密封剂（29）的同一侧表面平行突出的多个外引线（37），（38）和粘合到 所述半导体芯片的背面具有从所述树脂密封剂（29）的与所述外引线突出的侧面相对的侧面突出的集管突出部（28c），所述集管（28）具有露出面 （28b）从所述树脂密封剂（29）暴露出来; 外引线（37），（38）弯曲; 并且暴露的外引线（37），（38）设置在基本相同的高度。