摘要:
An organic light-emitting display apparatus includes a thin film transistor on a display region of a substrate, the thin film transistor faces an encapsulation member, an organic light-emitting device on the display region that includes an intermediate layer having an organic emission layer, a sealing member that is between the substrate and the encapsulation member and that surrounds the display region, an internal circuit unit between the display region and the sealing member, a passivation layer that extends to cover the internal circuit unit, a pixel defining layer on the passivation layer, and a getter between the substrate and the encapsulation member, and the getter at least partially overlaps the internal circuit unit.
摘要:
An organic light-emitting display device includes a capacitor lower electrode that includes a semiconductor material doped with ion impurities. A first insulating layer covers an active layer and the capacitor lower electrode. A gate electrode includes a gate lower electrode formed of a transparent conductive material and a gate upper electrode formed of metal. A pixel electrode is electrically connected to the thin film transistor. A capacitor upper electrode is at the same level as the pixel electrode. An etch block layer is formed between the first insulating layer and the capacitor upper electrode. Source and drain electrodes are electrically connected to the active layer. A second insulating layer has an opening completely exposing the capacitor upper electrode. A third insulating layer exposes the pixel electrode. An intermediate layer includes an emissive layer. An opposite electrode faces the pixel electrode.
摘要:
An organic light-emitting display apparatus includes a substrate, a thin-film transistor (TFT) on the substrate, the TFT including an active layer, a gate electrode, a source electrode, and a drain electrode, a first insulating film between the gate electrode and the source electrode and between the gate electrode and the drain electrode, a second insulating film between the first insulating film and the source electrode and between the first insulating film and the drain electrode, the second insulating film including an opening, a first electrode between the first insulating film and the second insulating film, the first electrode including a region corresponding to the opening of the second insulating film, an intermediate layer including an organic light-emitting layer, and a second electrode on the intermediate layer.
摘要:
An organic light emitting diode display device (OLED display device) having uniform electrical characteristics and a method of manufacturing the same. The OLED display device includes: a substrate; a semiconductor layer disposed on the substrate, and including source and drain regions and a channel region formed using metal induced lateral crystallization (MILC); a gate insulating layer for electrically insulating the semiconductor layer; a gate electrode disposed on the gate insulating layer; an interlayer insulating layer for electrically insulating the gate electrode; a thin film transistor (TFT) including source and drain electrodes that are electrically connected to the source and drain regions of the semiconductor layer; a first electrode for a capacitor disposed on a region of the substrate to be spaced apart from the TFT and formed using a metal induced crystallization (MIC); the gate insulating layer for electrically insulating the first capacitor electrode; a second electrode for the capacitor disposed on the gate insulating layer; a planarization layer disposed on the TFT and the capacitor; a first electrode disposed on the planarization layer; a pixel defining layer disposed on the first electrode; an organic layer disposed on the first electrode and the pixel defining layer, and including at least an emission layer; and a second electrode disposed on the organic layer.
摘要:
A CMOS thin film transistor arrangement including a PMOS poly-silicon thin film transistor having a top gate configuration and a NMOS oxide thin film transistor having an inverted staggered bottom gate configuration where both transistors share the same gate electrode. The shared gate electrode is used as a doping or implantation mask in the formation of the source and drain regions of the poly-silicon transistor.
摘要:
An organic light-emitting display device and a method of its manufacture are provided, whereby manufacturing processes are simplified and display quality may be enhanced. The display device includes: an active layer of a thin film transistor (TFT), on a substrate and including a semiconducting material; a lower electrode of a capacitor, on the substrate, doped with ion impurities, and including a semiconducting material; a first insulating layer on the substrate to cover the active layer and the lower electrode; a gate electrode of the TFT, on the first insulating layer; a pixel electrode on the first insulating layer; an upper electrode of the capacitor, on the first insulating layer; source and drain electrodes of the TFT, electrically connected to the active layer; an organic layer on the pixel electrode and including an organic emission layer; and a counter electrode facing the pixel electrode, the organic layer between the counter electrode and the pixel electrode.
摘要:
A TFT includes a substrate, a source electrode and a drain electrode on the substrate, the source and drain electrodes separated from each other, an active layer on the substrate between the source electrode and the drain electrode, a cladding unit on side surfaces of the source electrode and the drain electrode, a gate insulating layer on the substrate, the gate insulating layer overlapping the active layer and the cladding unit, and a gate electrode on the gate insulating layer, the gate electrode overlapping the active layer.
摘要:
A sense amplifier includes a pair of sense bit lines and first and second MOS sense amplifiers. The first MOS sense amplifier has a first pair of MOS transistors of first conductivity type therein, which are electrically coupled across the pair of sense bit lines. This electrically coupling is provided so that each of the first pair of MOS transistors has a first source/drain terminal electrically connected to a corresponding one of the pair of sense bit lines and the second source/drain terminals of the first pair of MOS transistors are electrically connected together. The first pair of MOS transistors of first conductivity type is configured to have different threshold voltages or support different threshold voltage biasing. The second MOS sense amplifier has a first pair of MOS transistors of second conductivity type therein, which are electrically coupled across the pair of sense bit lines.
摘要:
Disclosed are a method for forming a silicon thin-film on a substrate, and more particularly a method for forming a polycrystalline silicon thin-film of good quality on a flexible metal substrate. A metal substrate (110) is prepared and a surface of the metal substrate (110) is flattened. An insulation film (120) is formed on the metal substrate (110). An amorphous silicon layer (130) is formed on the insulation film (120). A metal layer (140) is formed on the amorphous silicon layer (130). A sample on the metal substrate (110) is heated and crystallized.
摘要:
An organic light emitting display device having an electrostatic capacitive type touch panel function with reduced thickness and improved luminance. A display panel of the organic light emitting display device includes a substrate, a display unit having a plurality of pixels on the substrate, and a touch sensing unit on the display unit. The touch sensing unit includes an encapsulation substrate and a capacitive pattern layer on a side of the encapsulation substrate facing the display unit. The capacitive pattern layer has a plurality of openings corresponding in position to the plurality of pixels.