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121 条记录 (耗时 0.022 秒)

    Integrated circuit interconnect structure with back reflection suppressing electronic
    82.
    发明授权
    Integrated circuit interconnect structure with back reflection suppressing electronic "speed bumps" 失效
    集成电路互连结构，具有背反射抑制电子“速度凸块”

    公开(公告)号：US5567988A

    公开(公告)日：1996-10-22

    申请号：US483113

    申请日：1995-06-07

    申请人： Michael D. Rostoker ,  Nicholas F. Pasch

    发明人： Michael D. Rostoker ,  Nicholas F. Pasch

    IPC分类号： H01L23/522 ,  H01L23/48 ,  H01L23/52 ,  H01L29/40

    CPC分类号： H01L23/522 ,  H01L23/5222 ,  H01L2924/0002 ,  H01L2924/3011

    摘要： A polysilicon interconnect is formed on a microelectronic circuit substrate for conducting signals from a driver to a non-polycrystalline silicon contact which has higher impedance than the interconnect. A plurality of electronic "speed bumps" are spaced along the interconnect for disturbing or disrupting signals propagating along the interconnect toward the contact and thereby reducing undesirable back reflection and ringing. The speed bumps can include capacitance altering elements in the form of dielectric strips, or resistance altering elements in the form of low resistance doped areas or high resistance amorphous areas. The speed bumps can include first and second elements having different values of capacitance or resistance which are spaced along the interconnect in alternating relation.

    摘要翻译： 在微电子电路基板上形成多晶硅互连，用于传导来自驱动器的信号到具有比互连更高的阻抗的非多晶硅接触。 多个电子“速度凸块”沿着互连线间隔开，用于干扰或扰乱沿着互连向接触传播的信号，从而减少不期望的背反射和振铃。 速度凸块可以包括介质条形式的电容改变元件，或电阻变化元件，其形式为低电阻掺杂区域或高电阻无定形区域。 速度凸块可以包括具有不同的电容值或电阻值的第一和第二元件，这些元件沿着互连交替关系间隔开。

    Molding compounds having a controlled thermal coefficient of expansion, and their uses in packaging electronic devices
    83.
    发明授权
    Molding compounds having a controlled thermal coefficient of expansion, and their uses in packaging electronic devices 失效
    具有受控的热膨胀系数的成型化合物及其在包装电子器件中的用途

    公开(公告)号：US5557066A

    公开(公告)日：1996-09-17

    申请号：US493956

    申请日：1995-06-23

    申请人： Michael D. Rostoker ,  Nicholas F. Pasch ,  Joe Zelayeta

    发明人： Michael D. Rostoker ,  Nicholas F. Pasch ,  Joe Zelayeta

    IPC分类号： H01L23/29 ,  H01L23/31 ,  H01L23/495 ,  H01J5/00

    CPC分类号： H01L23/3135 ,  H01L23/295 ,  H01L23/49558 ,  H01L2224/16 ,  H01L2224/16225 ,  H01L2224/16227 ,  H01L2224/48091 ,  H01L24/48 ,  H01L2924/00014 ,  H01L2924/10253 ,  H01L2924/14 ,  H01L2924/181

    摘要： Plastic (or resinous) materials used to package (or support) electronic devices typically have thermal coefficients of expansion exceeding that of the device to be packaged. A "loading" material (agent) having a coefficient of expansion significantly less than the "base" plastic material (molding compound), less than that of the die, and preferably zero or negative over a temperature range of interest, is mixed with the "base" plastic material to produce a plastic molding compound with a lower overall thermal coefficient of expansion. Titanium dioxide, zirconium oxide and silicon are discussed as loading agents. The loading material is mixed into the plastic molding compound in sufficient quantity to ensure that the resulting mixture exhibits an overall thermal coefficient of expansion that is more closely matched to that of the electronic device. Reduction of the absolute thermal coefficient of expansion of the plastic material (independent of any matching criteria) additionally serves to reduce thermal stress cracking of plastic package bodies during rapid thermal cycling, such as occurs during vapor soldering.

    摘要翻译： 用于封装（或支持）电子设备的塑料（或树脂）材料通常具有超过要包装的器件的热膨胀系数。 与目标温度范围相比，具有小于“基”塑料（模塑料）的膨胀系数的“负载”材料（试剂）与模具的相比，优选为零或负，与 “基”塑料材料生产具有较低总体热膨胀系数的塑料模塑料。 讨论了二氧化钛，氧化锆和硅作为负载剂。 将装载材料以足够的量混合到塑料模塑料中，以确保所得到的混合物表现出更接近于电子装置的热膨胀系数。 降低塑料材料的绝对热膨胀系数（与任何匹配标准无关）还可用于减少快速热循环期间塑料封装体的热应力开裂，例如在蒸气焊接过程中发生。

    Afocal concentrator for low wavelength lithography, particularly for semiconductor lithography
    85.
    发明授权
    Afocal concentrator for low wavelength lithography, particularly for semiconductor lithography 失效
    用于低波长光刻的焦距聚焦器，特别适用于半导体光刻

    公开(公告)号：US5485243A

    公开(公告)日：1996-01-16

    申请号：US56553

    申请日：1993-04-30

    申请人： Michael D. Rostoker ,  Nicholas F. Pasch ,  Joe Zelayeta

    发明人： Michael D. Rostoker ,  Nicholas F. Pasch ,  Joe Zelayeta

    IPC分类号： G03F7/20 ,  G03B27/00

    CPC分类号： G03F7/70008 ,  G03F7/702 ,  G03F7/70375 ,  Y10S430/167

    摘要： Fine, sub-micron line features and patterns are created in a sensitized layer on a semiconductor wafer by a beam of low wavelength radiation, such as X-rays or Gamma-rays. A stream of such radiation is concentrated and collimated by a concentrator, the output of which is disposed in close proximity to the sensitized surface of the wafer. In this manner, the sensitized surface can be converted from one chemical state to another chemical state, essentially point-by-point. By moving one or the other of the beam or the wafer, line features can be converted in the sensitized surface. Typically, non-converted areas of the sensitized surface are removed, for further processing a layer underlying the sensitized surface. The concentrator is useful in for directing a stream of radiation from a continuously emitting source, such as from a pellet of Cobalt-60, onto the sensitized surface of the wafer when a shutter mechanism is incorporated either upstream (towards the source) or downstream (towards the wafer) from the concentrator.

    摘要翻译： 通过诸如X射线或γ射线的低波长辐射束在半导体晶片上的增感层中产生细微亚微米线特征和图案。 这种辐射流被集中器集中并准直，该集中器的输出设置在晶片敏感表面附近。 以这种方式，致敏表面可以从一个化学状态转变为另一个化学状态，基本上是逐点的。 通过移动光束或晶片中的一个或另一个，可以在致敏表面中转换线特征。 通常，去除敏化表面的未转化区域，以进一步处理敏化表面下面的层。 浓缩器可用于在将快门机构并入上游（朝向源）或下游（在源头）处引入来自连续发射源的辐射流，例如由钴-60颗粒沉积到晶片的致敏表面上（ 朝向晶片）。

    Fluid-filled and gas-filled semiconductor packages
    90.
    发明授权
    Fluid-filled and gas-filled semiconductor packages 失效
    流体填充和气体填充半导体封装

    公开(公告)号：US5405808A

    公开(公告)日：1995-04-11

    申请号：US142674

    申请日：1993-10-26

    申请人： Michael D. Rostoker ,  Nicholas F. Pasch ,  Mark Schneider

    发明人： Michael D. Rostoker ,  Nicholas F. Pasch ,  Mark Schneider

    IPC分类号： H01L23/20 ,  H01L23/31 ,  H01L23/42 ,  H01L23/60 ,  H01L21/60

    CPC分类号： H01L23/42 ,  H01L23/20 ,  H01L23/3171 ,  H01L23/60 ,  H01L2224/16225 ,  H01L2224/8192 ,  H01L2224/8592 ,  H01L2924/01019 ,  H01L2924/10253 ,  H01L2924/14 ,  H01L2924/15153 ,  H01L2924/1517 ,  H01L2924/16151 ,  H01L2924/16195 ,  Y10T29/49146

    摘要： Improved thermal and/or electrostatic discharge characteristics are realized in cavity-type semiconductor device assemblies by filling the cavity with either a thermally conductive fluid and/or an arc suppressing gas, or combinations thereof. The interior of the cavity, including the die, leads extending into the cavity, and connections between the die and the leads may be coated to provide protection from corrosive and/or electrical characteristics of the cavity-filling fluid (liquid or gas). The fluid may be introduced through a hole in a lid sealing the cavity, and the cavity is filled sufficiently that the fluid is in contact with the die at various spatial orientations of the package. A thermally-conductive fluid substantially filling the cavity provides improved thermal conduction from the die to the package body without the mechanical stress problems (e.g., thermally induced cracking) ordinarily associated with bonding solid materials to the die. An arc-suppressing gas filling the cavity provides significant suppression of electrical discharges, thereby producing a packaged semiconductor device with improved electrostatic characteristics.

    摘要翻译： 通过用导热流体和/或电弧抑制气体或其组合填充空腔，在腔型半导体器件组件中实现改进的热和/或静电放电特性。 空腔的内部，包括模具，引导件延伸到空腔中，并且模具和引线之间的连接可以被涂覆以提供防止空腔填充流体（液体或气体）的腐蚀性和/或电气特性的保护。 流体可以通过密封空腔的盖中的孔引入，并且充分填充空腔，使得流体在包装的各种空间取向下与模具接触。 基本上填充空腔的导热流体提供了从模具到包装体的改进的热传导，而没有通常与将固体材料结合到模具相关的机械应力问题（例如，热诱导的裂纹）。 填充空腔的消弧气体提供了放电的显着抑制，从而产生具有改善的静电特性的封装半导体器件。