公开(公告)号：US08173228B2

公开(公告)日：2012-05-08

申请号：US11498606

申请日：2006-08-02

申请人： Soo Young Choi ,  John M. White ,  Beom Soo Park ,  Dong Kil Yim

发明人： Soo Young Choi ,  John M. White ,  Beom Soo Park ,  Dong Kil Yim

IPC分类号： H05H1/24 ,  B05D3/00 ,  B05C13/00

CPC分类号： B24C1/003 ,  B24C3/322

摘要： A method of reducing the amount of particulates generated from the surface of a processing component used during plasma enhanced chemical vapor deposition of thin films. The body of the processing component comprises an aluminum alloy, and an exterior surface of said processing component is texturized to increase the amount of surface area present on the exterior surface. The texturizing process includes at least one step in which the surface to be texturized is bead blasted or chemically grained, so that the surface roughness of the texturized surface ranges from about 50 μ-inch Ra to about 1,000 μ-inch Ra.

摘要翻译： 一种减少在等离子体增强化学气相沉积薄膜期间使用的处理部件表面产生的微粒量的方法。 处理部件的主体包括铝合金，并且所述处理部件的外表面被组织化以增加外表面上存在的表面积的量。 该组织化工艺包括至少一个步骤，其中待组织的表面经过喷砂处理或化学粒化，使得织构化表面的表面粗糙度范围为约50μ英寸Ra至约1,000μ英寸Ra。

公开(公告)号：US08110453B2

公开(公告)日：2012-02-07

申请号：US12425228

申请日：2009-04-16

申请人： Ya-Tang Yang ,  Beom Soo Park ,  Tae Kyung Won ,  Soo Young Choi ,  John M. White

发明人： Ya-Tang Yang ,  Beom Soo Park ,  Tae Kyung Won ,  Soo Young Choi ,  John M. White

IPC分类号： H01L21/84 ,  H01L21/336 ,  H01L21/20 ,  H01L29/786

CPC分类号： H01L29/4908 ,  H01L29/66765

摘要： A method and apparatus for forming a thin film transistor is provided. A gate dielectric layer is formed, which may be a bilayer, the first layer deposited at a low rate and the second deposited at a high rate. In some embodiments, the first dielectric layer is a silicon rich silicon nitride layer. An active layer is formed, which may also be a bilayer, the first active layer deposited at a low rate and the second at a high rate. The thin film transistors described herein have superior mobility and stability under stress.

摘要翻译： 提供一种用于形成薄膜晶体管的方法和装置。 形成栅电介质层，其可以是双层，第一层以低速率沉积，第二层以高速率沉积。 在一些实施例中，第一介电层是富硅的氮化硅层。 形成有源层，其也可以是双层，第一有源层以低速率沉积，第二有效层以高速率沉积。 本文所述的薄膜晶体管在应力下具有优异的迁移率和稳定性。

公开(公告)号：US20110290183A1

公开(公告)日：2011-12-01

申请号：US13207227

申请日：2011-08-10

申请人： Soo Young Choi ,  John M. White ,  Qunhua Wang ,  Li Hou ,  Ki Woon Kim ,  Shinichi Kurita ,  Tae Kyung Won ,  Suhail Anwar ,  Beom Soo Park ,  Robin L. Tiner

发明人： Soo Young Choi ,  John M. White ,  Qunhua Wang ,  Li Hou ,  Ki Woon Kim ,  Shinichi Kurita ,  Tae Kyung Won ,  Suhail Anwar ,  Beom Soo Park ,  Robin L. Tiner

IPC分类号： C23C16/455

CPC分类号： H01J37/3244 ,  C23C16/345 ,  C23C16/455 ,  C23C16/45565 ,  C23C16/5096 ,  H01J37/32082 ,  H01J37/32091 ,  H01J37/32541 ,  H01J37/32596 ,  H01J2237/327 ,  H01J2237/3321 ,  H01J2237/3323 ,  H01J2237/3325 ,  Y10T29/49885 ,  Y10T29/49996

摘要： Embodiments of a gas diffuser plate for distributing gas in a processing chamber are provided. The gas distribution plate includes a diffuser plate having an upstream side and a downstream side, and a plurality of gas passages passing between the upstream and downstream sides of the diffuser plate. The gas passages include hollow cathode cavities at the downstream side to enhance plasma ionization. The depths, the diameters, the surface area and density of hollow cathode cavities of the gas passages that extend to the downstream end can be gradually increased from the center to the edge of the diffuser plate to improve the film thickness and property uniformity across the substrate. The increasing diameters, depths and surface areas from the center to the edge of the diffuser plate can be created by bending the diffuser plate toward downstream side, followed by machining out the convex downstream side. Bending the diffuser plate can be accomplished by a thermal process or a vacuum process. The increasing diameters, depths and surface areas from the center to the edge of the diffuser plate can also be created computer numerically controlled machining. Diffuser plates with gradually increasing diameters, depths and surface areas of the hollow cathode cavities from the center to the edge of the diffuser plate have been shown to produce improved uniformities of film thickness and film properties.

摘要翻译： 提供了用于在处理室中分配气体的气体扩散板的实施例。 气体分配板包括具有上游侧和下游侧的扩散板，以及在扩散板的上游侧和下游侧之间通过的多个气体通路。 气体通道包括在下游侧的中空阴极腔，以增强等离子体电离。 延伸到下游端的气体通道的空心阴极腔的深度，直径，表面积和密度可以从扩散板的中心到边缘逐渐增加，以改善衬底上的膜厚度和性能均匀性 。 从扩散板的中心到边缘的直径，深度和表面积的增加可以通过向下游侧弯曲扩散板，然后在凸出的下游侧加工出来。 扩散板的弯曲可以通过热处理或真空工艺来实现。 从扩散板的中心到边缘的直径，深度和表面积的增加也可以用计算机数字控制加工。 具有从扩散板的中心到边缘的中空阴极腔的直径逐渐增加，深度和表面积逐渐增大的扩散板已被证明可以产生改善的膜厚度和膜性质的均匀性。

公开(公告)号：US07884035B2

公开(公告)日：2011-02-08

申请号：US12082554

申请日：2008-04-11

申请人： Beom Soo Park ,  Soo Young Choi ,  Tae Kyung Won ,  John M. White

发明人： Beom Soo Park ,  Soo Young Choi ,  Tae Kyung Won ,  John M. White

IPC分类号： H01L21/31 ,  H01L21/469

CPC分类号： H01L21/0217 ,  C23C16/345 ,  C23C16/5096 ,  H01L21/02208 ,  H01L21/02274 ,  H01L21/3185 ,  H01L29/4908 ,  H01L29/66765

摘要： We have discovered that adding H2 to a precursor gas composition including SiH4, NH3, and N2 is effective at improving the wet etch rate and the wet etch rate uniformity across the substrate surface of a-SiNx:H films which are deposited on a substrate by PECVD. Wet etch rate is an indication of film density. Typically, the lower the wet etch rate, the denser the film. The addition of H2 to the SiH4/NH3/N2 precursor gas composition did not significantly increase the variation in deposited film thickness across the surface of the substrate. The uniformity of the film across the substrate enables the production of flat panel displays having surface areas of 25,000 cm2 and larger.

摘要翻译： 我们已经发现，将H2添加到包括SiH 4，NH 3和N 2的前体气体组合物中是有效的，以提高沉积在衬底上的a-SiNx：H膜的衬底表面上的湿蚀刻速率和湿蚀刻速率均匀性， PECVD。 湿蚀刻速率是膜密度的指示。 通常，湿蚀刻速率越低，膜越致密。 向SiH 4 / NH 3 / N 2前体气体组合物中加入H 2没有显着增加穿过基材表面的沉积膜厚度的变化。 跨过基板的膜的均匀性使得能够生产具有25,000cm 2和更大的表面积的平板显示器。

公开(公告)号：US20090261331A1

公开(公告)日：2009-10-22

申请号：US12425228

申请日：2009-04-16

申请人： Ya-Tang Yang ,  Beom Soo Park ,  Tae Kyung Won ,  Soo Young Choi ,  John M. White

发明人： Ya-Tang Yang ,  Beom Soo Park ,  Tae Kyung Won ,  Soo Young Choi ,  John M. White

IPC分类号： H01L29/786 ,  H01L21/20

CPC分类号： H01L29/4908 ,  H01L29/66765

摘要： A method and apparatus for forming a thin film transistor is provided. A gate dielectric layer is formed, which may be a bilayer, the first layer deposited at a low rate and the second deposited at a high rate. In some embodiments, the first dielectric layer is a silicon rich silicon nitride layer. An active layer is formed, which may also be a bilayer, the first active layer deposited at a low rate and the second at a high rate. The thin film transistors described herein have superior mobility and stability under stress.

摘要翻译： 提供一种用于形成薄膜晶体管的方法和装置。 形成栅电介质层，其可以是双层，第一层以低速率沉积，第二层以高速率沉积。 在一些实施例中，第一介电层是富硅的氮化硅层。 形成有源层，其也可以是双层，第一有源层以低速率沉积，第二有效层以高速率沉积。 本文所述的薄膜晶体管在应力下具有优异的迁移率和稳定性。

公开(公告)号：US20090255798A1

公开(公告)日：2009-10-15

申请号：US12271616

申请日：2008-11-14

申请人： Gaku Furuta ,  Young-Jin Choi ,  Soo Young Choi ,  Beom Soo Park ,  John M. White ,  Suhail Anwar ,  Robin L. Tiner

发明人： Gaku Furuta ,  Young-Jin Choi ,  Soo Young Choi ,  Beom Soo Park ,  John M. White ,  Suhail Anwar ,  Robin L. Tiner

IPC分类号： C23C16/513

CPC分类号： C23C16/5096 ,  C23C16/4405 ,  C23C16/45561 ,  H01J37/32091 ,  H01J37/32357 ,  H01J37/3244 ,  H01J37/32449

摘要： The present invention generally includes a plasma enhanced chemical vapor deposition (PECVD) processing chamber having an RF power source coupled to the backing plate at a location separate from the gas source. By feeding the gas into the processing chamber at a location separate from the RF power, parasitic plasma formation in the gas tubes leading to the processing chamber may be reduced. The gas may be fed to the chamber at a plurality of locations. At each location, the gas may be fed to the processing chamber from the gas source by passing through a remote plasma source as well as an RF choke or RF resistor.

摘要翻译： 本发明通常包括等离子体增强化学气相沉积（PECVD）处理室，其具有在与气源分开的位置处连接到背板的RF功率源。 通过在与RF功率分开的位置处将气体供给到处理室中，可以减少通向处理室的气体管中的寄生等离子体形成。 气体可以在多个位置被供给到腔室。 在每个位置，气体可以通过远程等离子体源以及RF扼流器或RF电阻器从气体源馈送到处理室。

公开(公告)号：US20090208668A1

公开(公告)日：2009-08-20

申请号：US12033240

申请日：2008-02-19

申请人： SOO YOUNG CHOI ,  John M. White

发明人： SOO YOUNG CHOI ,  John M. White

IPC分类号： C23C16/44

CPC分类号： C23C16/54 ,  C23C16/4405 ,  H01L21/67207 ,  H01L21/67236

摘要： A “three” chamber design multi-chamber cluster processing system which is used in the fabrication of a solar cell-comprising substrate. The processing system includes at least one PECVD processing chamber configured to deposit a p-doped layer, at least three PECVD processing chambers configured to deposit an i-layer, and at least one PECVD processing chamber configured to deposit an n-doped layer. The processing system also includes at least one central substrate transferring chamber which is typically located substantially equidistant from each of the PECVD processing chambers, and a transfer robot present in the central transferring chamber which is capable of paired transfer of substrates. An apparatus which provides a source of fluorine-comprising reactive species is in communication with each of said PECVD processing chambers.

摘要翻译： 一种用于制造含太阳能电池的基板的“三”室设计的多室丛集处理系统。 处理系统包括至少一个PECVD处理室，其被配置为沉积p掺杂层，配置成沉积i层的至少三个PECVD处理室和被配置为沉积n掺杂层的至少一个PECVD处理室。 处理系统还包括至少一个中心衬底传送室，该中心衬底传送室通常位于与每个PECVD处理室基本等距的位置，以及存在于中心传送室中的能够成对传送衬底的传送机械手。 提供含氟反应性物质源的装置与每个所述PECVD处理室连通。

公开(公告)号：US20090159423A1

公开(公告)日：2009-06-25

申请号：US12343519

申请日：2008-12-24

申请人： Jozef Kudela ,  Carl A. Sorensen ,  Soo Young Choi ,  John M. White

发明人： Jozef Kudela ,  Carl A. Sorensen ,  Soo Young Choi ,  John M. White

IPC分类号： H05H1/00 ,  H01L21/3065 ,  B23H7/14

CPC分类号： H01L21/02 ,  B44C1/227 ,  C23C16/513 ,  H01J37/32091 ,  H01J37/32577 ,  H01L21/02104

摘要： RF power is coupled to one or more RF drive points (50-56) on an electrode (20-28) of a plasma chamber such that the level of RF power coupled to the RF drive points (51-52, 55-56) on the half (61) of the electrode that is closer to the workpiece passageway (12) exceeds the level of RF power coupled to the RF drive points (53-54), if any, on the other half (62) of the electrode. Alternatively, RF power is coupled to one or more RF drive points on an electrode of a plasma chamber such that the weighted mean of the drive point positions is between the center (60) of the electrode and the workpiece passageway. The weighted mean is based on weighting each drive point position by the time-averaged level of RF power coupled to that drive point position. The invention offsets an increase in plasma density that otherwise would exist adjacent the end of the electrode closest to the passageway.

摘要翻译： RF功率耦合到等离子体室的电极（20-28）上的一个或多个RF驱动点（50-56），使得耦合到RF驱动点（51-52,55-56）的RF功率的电平 更靠近工件通道（12）的电极的一半（61）超过了电极的另一半（62）上耦合到RF驱动点（53-54）的RF功率的水平（如果有的话） 。 或者，RF功率耦合到等离子体室的电极上的一个或多个RF驱动点，使得驱动点位置的加权平均值在电极的中心（60）和工件通道之间。 加权平均值基于通过耦合到该驱动点位置的RF功率的时间平均水平来加权每个驱动点位置。 本发明抵消等离子体密度的增加，否则其将邻近电极最靠近通道的端部存在。

公开(公告)号：US20090104376A1

公开(公告)日：2009-04-23

申请号：US12254742

申请日：2008-10-20

申请人： SOO YOUNG CHOI ,  John M. White ,  Robert I. Greene

发明人： SOO YOUNG CHOI ,  John M. White ,  Robert I. Greene

IPC分类号： C23C16/513 ,  B08B6/00

CPC分类号： C23C16/45559 ,  B05B1/005 ,  C23C16/4405 ,  C23C16/45565 ,  H01J37/3244

摘要： Embodiments of a gas distribution plate for distributing gas in a processing chamber are provided. In one embodiment, a gas distribution plate includes a diffuser plate having an upstream side and a downstream side, and a plurality of gas passages passing between the upstream and downstream sides of the diffuser plate. At least one of the gas passages has a right cylindrical shape for a portion of its length extending from the upstream side and a coaxial conical shape for the remainder length of the diffuser plate, the upstream end of the conical portion having substantially the same diameter as the right cylindrical portion and the downstream end of the conical portion having a larger diameter. The gas distribution plate is relatively easy to manufacture and provides good chamber cleaning rate, good thin film deposition uniformity and good thin film deposition rate. The gas distribution plate also has the advantage of reduced chamber cleaning residues on the diffuser surface and reduced incorporation of the cleaning residues in the thin film being deposited.

摘要翻译： 提供了用于在处理室中分配气体的气体分配板的实施例。 在一个实施例中，气体分配板包括具有上游侧和下游侧的扩散板和通过扩散板的上游侧和下游侧之间的多个气体通道。 气体通道中的至少一个具有从上游侧延伸的一部分长度的右圆柱形状，并且对于扩散板的剩余长度为同轴圆锥形，锥形部分的上游端具有与 锥形部分的右圆柱形部分和下游端具有较大的直径。 气体分配板相对容易制造，提供良好的室清洁率，良好的薄膜沉积均匀性和良好的薄膜沉积速率。 气体分配板还具有减小扩散器表面上的室清洁残留物的优点，并且减少了沉积在薄膜中的清洁残余物的结合。

公开(公告)号：US20080305246A1

公开(公告)日：2008-12-11

申请号：US11759542

申请日：2007-06-07

申请人： Soo Young Choi ,  Tae Kyung Won ,  Beom Soo Park ,  John M. White

发明人： Soo Young Choi ,  Tae Kyung Won ,  Beom Soo Park ,  John M. White

IPC分类号： C23C16/00 ,  B05D5/12

CPC分类号： C23C16/45565 ,  H01L31/182 ,  H01L31/1824 ,  Y02E10/545 ,  Y02E10/546 ,  Y02P70/521

摘要： Methods and apparatus having a gradient spacing created between a substrate support assembly and a gas distribution plate for depositing a silicon film for solar cell applications are provided. In one embodiment, an apparatus for depositing films for solar cell applications may include a processing chamber, a substrate support disposed in the processing chamber and configured to support a quadrilateral substrate thereon, and a gas distribution plate disposed in the processing chamber above the substrate support, wherein a bottom surface of the gas distribution plate has a perimeter that includes edges and corners, and wherein the corners of the gas distribution plate are closer to the substrate support than the edges of the gas distribution plate.

摘要翻译： 提供了在衬底支撑组件和用于沉积太阳能电池应用的硅膜的气体分配板之间产生梯度间隔的方法和装置。 在一个实施例中，一种用于沉积太阳能电池薄膜的设备可以包括处理室，设置在处理室中的基板支撑件，并且被配置为在其上支撑四边形基板，以及布置在处理室中的基板支撑件上方的气体分配板 其中，所述气体分配板的底面具有包括边缘和角部的周边，并且其中所述气体分配板的角部比所述气体分配板的边缘更靠近所述基板支撑。