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81.发明申请公开(公告)号：US20220289560A1
公开(公告)日：2022-09-15
申请号：US17664789
申请日：2022-05-24
发明人： Yaojian Lin , Won Kyoung Choi , Kang Chen , Ivan Micallef
IPC分类号： B81B7/00 , B81C1/00 , H01L21/56 , H01L23/538 , H01L23/552 , H01L23/00 , H01L25/10 , H01L25/00
摘要： A semiconductor device has a first semiconductor die and a modular interconnect structure adjacent to the first semiconductor die. An encapsulant is deposited over the first semiconductor die and modular interconnect structure as a reconstituted panel. An interconnect structure is formed over the first semiconductor die and modular interconnect structure. An active area of the first semiconductor die remains devoid of the interconnect structure. A second semiconductor die is mounted over the first semiconductor die with an active surface of the second semiconductor die oriented toward an active surface of the first semiconductor die. The reconstituted panel is singulated before or after mounting the second semiconductor die. The first or second semiconductor die includes a microelectromechanical system (MEMS). The second semiconductor die includes an encapsulant and an interconnect structure formed over the second semiconductor die. Alternatively, the second semiconductor die is mounted to an interposer disposed over the interconnect structure.
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公开(公告)号：US11222793B2
公开(公告)日：2022-01-11
申请号：US16687865
申请日：2019-11-19
摘要： A semiconductor device has a semiconductor wafer including a plurality of semiconductor die. An insulating layer is formed over the semiconductor wafer. A portion of the insulating layer is removed by LDA to expose a portion of an active surface of the semiconductor die. A first conductive layer is formed over a contact pad on the active surface of the semiconductor die. The semiconductor wafer is singulated to separate the semiconductor die. The semiconductor die is disposed over a carrier with the active surface of the semiconductor die offset from the carrier. An encapsulant is deposited over the semiconductor die and carrier to cover a side of the semiconductor die and the exposed portion of the active surface. An interconnect structure is formed over the first conductive layer. Alternatively, a MUF material is deposited over a side of the semiconductor die and the exposed portion of the active surface.
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83.发明申请公开(公告)号：US20210233815A1
公开(公告)日：2021-07-29
申请号：US17231591
申请日：2021-04-15
发明人： Thomas J. Strothmann , Damien M. Pricolo , Il Kwon Shim , Yaojian Lin , Heinz-Peter Wirtz , Seung Wook Yoon , Pandi C. Marimuthu
IPC分类号： H01L21/78 , H01L23/28 , H01L23/522 , H01L23/31 , H01L21/56 , H01L23/00 , H01L23/498 , H01L21/683
摘要： A semiconductor device has a carrier with a fixed size. A plurality of first semiconductor die is singulated from a first semiconductor wafer. The first semiconductor die are disposed over the carrier. The number of first semiconductor die on the carrier is independent from the size and number of first semiconductor die singulated from the first semiconductor wafer. An encapsulant is deposited over and around the first semiconductor die and carrier to form a reconstituted panel. An interconnect structure is formed over the reconstituted panel while leaving the encapsulant devoid of the interconnect structure. The reconstituted panel is singulated through the encapsulant. The first semiconductor die are removed from the carrier. A second semiconductor die with a size different from the size of the first semiconductor die is disposed over the carrier. The fixed size of the carrier is independent of a size of the second semiconductor die.
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84.发明授权公开(公告)号：US10790158B2
公开(公告)日：2020-09-29
申请号：US16206108
申请日：2018-11-30
发明人： Yaojian Lin , Kang Chen , Hin Hwa Goh , Il Kwon Shim
IPC分类号： H01L21/48 , H01L23/00 , H01L21/56 , H01L23/13 , H01L23/498 , H01L23/538
摘要： A semiconductor device has a substrate. A conductive via is formed through the substrate. A plurality of first contact pads is formed over a first surface of the substrate. A plurality of second contact pads is formed over a second surface of the substrate. A dummy pattern is formed over the second surface of the substrate. An indentation is formed in a sidewall of the substrate. An opening is formed through the substrate. An encapsulant is deposited in the opening. An insulating layer is formed over second surface of the substrate. A dummy opening is formed in the insulating layer. A semiconductor die is disposed adjacent to the substrate. An encapsulant is deposited over the semiconductor die and substrate. The first surface of the substrate includes a width that is greater than a width of the second surface of the substrate.
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公开(公告)号：US10777528B2
公开(公告)日：2020-09-15
申请号：US15615693
申请日：2017-06-06
发明人： Yaojian Lin , Pandi C. Marimuthu , Il Kwon Shim , Byung Joon Han
IPC分类号： H01L21/56 , H01L21/786 , H01L21/784 , H01L23/00 , H01L23/31 , H01L21/782 , H01L21/82 , H01L21/78
摘要： A semiconductor device includes a semiconductor die and an encapsulant deposited over and around the semiconductor die. A semiconductor wafer includes a plurality of semiconductor die and a base semiconductor material. A groove is formed in the base semiconductor material. The semiconductor wafer is singulated through the groove to separate the semiconductor die. The semiconductor die are disposed over a carrier with a distance of 500 micrometers (μm) or less between semiconductor die. The encapsulant covers a sidewall of the semiconductor die. A fan-in interconnect structure is formed over the semiconductor die while the encapsulant remains devoid of the fan-in interconnect structure. A portion of the encapsulant is removed from a non-active surface of the semiconductor die. The device is singulated through the encapsulant while leaving encapsulant disposed covering a sidewall of the semiconductor die. The encapsulant covering the sidewall includes a thickness of 50 μm or less.
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公开(公告)号：US10658330B2
公开(公告)日：2020-05-19
申请号：US15626511
申请日：2017-06-19
发明人： Byung Joon Han , Il Kwon Shim , Yaojian Lin , Pandi C. Marimuthu
摘要： A semiconductor device includes a standardized carrier. A semiconductor wafer includes a plurality of semiconductor die and a base semiconductor material. The semiconductor wafer is singulated through a first portion of the base semiconductor material to separate the semiconductor die. The semiconductor die are disposed over the standardized carrier. A size of the standardized carrier is independent from a size of the semiconductor die. An encapsulant is deposited over the standardized carrier and around the semiconductor die. An interconnect structure is formed over the semiconductor die while leaving the encapsulant devoid of the interconnect structure. The semiconductor device is singulated through the encapsulant. Encapsulant remains disposed on a side of the semiconductor die. Alternatively, the semiconductor device is singulated through a second portion of the base semiconductor and through the encapsulant to remove the second portion of the base semiconductor and encapsulant from the side of the semiconductor die.
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87.发明授权公开(公告)号：US10515828B2
公开(公告)日：2019-12-24
申请号：US15274590
申请日：2016-09-23
摘要： A semiconductor device has a semiconductor wafer including a plurality of semiconductor die. An insulating layer is formed over the semiconductor wafer. A portion of the insulating layer is removed by LDA to expose a portion of an active surface of the semiconductor die. A first conductive layer is formed over a contact pad on the active surface of the semiconductor die. The semiconductor wafer is singulated to separate the semiconductor die. The semiconductor die is disposed over a carrier with the active surface of the semiconductor die offset from the carrier. An encapsulant is deposited over the semiconductor die and carrier to cover a side of the semiconductor die and the exposed portion of the active surface. An interconnect structure is formed over the first conductive layer. Alternatively, a MUF material is deposited over a side of the semiconductor die and the exposed portion of the active surface.
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88.发明授权公开(公告)号：US10446523B2
公开(公告)日：2019-10-15
申请号：US15218847
申请日：2016-07-25
发明人： Pandi C. Marimuthu , Sheila Marie L. Alvarez , Yaojian Lin , Jose A. Caparas , Yang Kern Jonathan Tan
IPC分类号： H01L21/00 , H01L25/065 , H01L23/498 , H01L21/56 , H01L23/00 , H01L23/538 , H01L25/10 , H01L21/311 , H01L21/48 , H01L23/31 , H01L21/263
摘要： A semiconductor device has a substrate and semiconductor die disposed over a first surface of the substrate. A wire stud is attached to the first surface of the substrate. The wire stud includes a base portion and stem portion. A bonding pad is formed over a second surface of the substrate. An encapsulant is deposited over the substrate, semiconductor die, and wire stud. A portion of the encapsulant is removed by LDA to expose the wire stud. A portion of the encapsulant is removed by LDA to expose the substrate. An interconnect structure is formed over the encapsulant and electrically connected to the wire stud and semiconductor die. A bump is formed over the interconnect structure. A semiconductor package is disposed over the encapsulant and electrically connected to the substrate. A discrete semiconductor device is disposed over the encapsulant and electrically connected to the substrate.
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89.发明授权公开(公告)号：US10388612B2
公开(公告)日：2019-08-20
申请号：US15664734
申请日：2017-07-31
发明人： Yaojian Lin , Byung Joon Han , Rajendra D. Pendse , Il Kwon Shim , Pandi C. Marimuthu , Won Kyoung Choi , Linda Pei Ee Chua
IPC分类号： H01L23/00 , H01L23/498 , H01L23/538 , H01L23/552 , H01L21/56 , H01L21/683
摘要： A semiconductor device has a first component. A modular interconnect structure is disposed adjacent to the first component. A first interconnect structure is formed over the first component and modular interconnect structure. A shielding layer is formed over the first component, modular interconnect structure, and first interconnect structure. The shielding layer provides protection for the enclosed semiconductor devices against EMI, RFI, or other inter-device interference, whether generated internally or from external semiconductor devices. The shielding layer is electrically connected to an external low-impedance ground point. A second component is disposed adjacent to the first component. The second component includes a passive device. An LC circuit includes the first component and second component. A semiconductor die is disposed adjacent to the first component. A conductive adhesive is disposed over the modular interconnect structure. The modular interconnect structure includes a height less than a height of the first component.
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90.发明申请公开(公告)号：US20190109015A1
公开(公告)日：2019-04-11
申请号：US16206108
申请日：2018-11-30
发明人： Yaojian Lin , Kang Chen , Hin Hwa Goh , Il Kwon Shim
IPC分类号： H01L21/48 , H01L23/498 , H01L21/56 , H01L23/538 , H01L23/00 , H01L23/13
摘要： A semiconductor device has a substrate. A conductive via is formed through the substrate. A plurality of first contact pads is formed over a first surface of the substrate. A plurality of second contact pads is formed over a second surface of the substrate. A dummy pattern is formed over the second surface of the substrate. An indentation is formed in a sidewall of the substrate. An opening is formed through the substrate. An encapsulant is deposited in the opening. An insulating layer is formed over second surface of the substrate. A dummy opening is formed in the insulating layer. A semiconductor die is disposed adjacent to the substrate. An encapsulant is deposited over the semiconductor die and substrate. The first surface of the substrate includes a width that is greater than a width of the second surface of the substrate.
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