公开(公告)号：US20100150199A1

公开(公告)日：2010-06-17

申请号：US12656932

申请日：2010-02-19

申请人： Takeshi Kamikawa ,  Yoshika Kaneko ,  Kensaku Motoki

发明人： Takeshi Kamikawa ,  Yoshika Kaneko ,  Kensaku Motoki

IPC分类号： H01S5/22

CPC分类号： B82Y20/00 ,  H01L21/0237 ,  H01L21/0254 ,  H01L21/02636 ,  H01S5/2201 ,  H01S5/34333 ,  H01S2304/12

摘要： A nitride semiconductor light-emitting device wherein a substrate or nitride semiconductor layer has a defect concentration region and a low defect density region other than the defect concentration region. A portion including the defect concentration region of the nitride semiconductor layer or substrate has a trench region deeper than the low defect density region. Thus by digging the trench in the defect concentration region, the growth detection is uniformized, and the surface planarity is improved. The uniformity of the characteristic in the wafer surface leads to improvement of the yield.

摘要翻译： 一种氮化物半导体发光器件，其中衬底或氮化物半导体层具有缺陷浓度区域和除缺陷浓度区域之外的低缺陷密度区域。 包含氮化物半导体层或衬底的缺陷浓度区域的部分具有比低缺陷密度区域更深的沟槽区域。 因此，通过挖掘缺陷浓度区域中的沟槽，生长检测是均匀的，并且表面平面度得到改善。 晶片表面的特性的均匀性导致产率的提高。

公开(公告)号：US20090075413A1

公开(公告)日：2009-03-19

申请号：US12213686

申请日：2008-06-23

申请人： Takeshi Kamikawa ,  Yoshinobu Kawaguchi

发明人： Takeshi Kamikawa ,  Yoshinobu Kawaguchi

IPC分类号： H01L21/00

CPC分类号： H01L29/7787 ,  B82Y20/00 ,  H01L29/2003 ,  H01L29/7786 ,  H01L33/44 ,  H01S5/028 ,  H01S5/22 ,  H01S5/34333

摘要： Provided are a nitride semiconductor light emitting device including a coat film formed at a light emitting portion and including an aluminum nitride crystal or an aluminum oxynitride crystal, and a method of manufacturing the nitride semiconductor light emitting device. Also provided is a nitride semiconductor transistor device including a nitride semiconductor layer and a gate insulating film which is in contact with the nitride semiconductor layer and includes an aluminium nitride crystal or an aluminum oxynitride crystal.

摘要翻译： 提供一种氮化物半导体发光器件，其包括形成在发光部分并且包括氮化铝晶体或氮氧化铝晶体的涂膜，以及制造氮化物半导体发光器件的方法。 还提供了一种氮化物半导体晶体管器件，其包括与氮化物半导体层接触并包括氮化铝晶体或氮氧化铝晶体的氮化物半导体层和栅极绝缘膜。

公开(公告)号：US20090010293A1

公开(公告)日：2009-01-08

申请号：US12216295

申请日：2008-07-02

申请人： Takeshi Kamikawa

发明人： Takeshi Kamikawa

IPC分类号： H01S5/22 ,  H01L33/00

CPC分类号： H01S5/32341

摘要： A nitride semiconductor light emitting device includes an n-type GaN substrate (101) that is a nitride semiconductor substrate, a nitride semiconductor layer including a p-type nitride semiconductor layer formed on the n-type GaN substrate (101). The p-type nitride semiconductor layer includes a p-type AlGaInN contact layer (108), a p-type AlGaInN cladding layer (107) under the p-type AlGaInN contact layer (108), and a p-type AlGaInN layer (106). A protection film (113) made of a silicon nitride film is formed above a current injection region formed in the p-type nitride semiconductor layer.

摘要翻译： 氮化物半导体发光器件包括作为氮化物半导体衬底的n型GaN衬底（101），包括形成在n型GaN衬底（101）上的p型氮化物半导体层的氮化物半导体层。 p型氮化物半导体层包括p型AlGaInN接触层（108），p型AlGaInN接触层（108）下的p型AlGaInN覆盖层（107）和p型AlGaInN层（106） ）。 在形成在p型氮化物半导体层中的电流注入区域的上方形成由氮化硅膜形成的保护膜（113）。

公开(公告)号：US20070138491A1

公开(公告)日：2007-06-21

申请号：US11638581

申请日：2006-12-14

申请人： Yoshinobu Kawaguchi ,  Takeshi Kamikawa

发明人： Yoshinobu Kawaguchi ,  Takeshi Kamikawa

IPC分类号： H01L33/00

CPC分类号： H01S5/028 ,  B82Y20/00 ,  H01L33/44 ,  H01S5/0021 ,  H01S5/2231 ,  H01S5/34333 ,  H01S2304/00

摘要： There is provided a nitride semiconductor light emitting device having a light emitting portion coated with a coating film, the light emitting portion being formed of a nitride semiconductor, the coating film in contact with the light emitting portion being formed of an oxynitride film deposited adjacent to the light emitting portion and an oxide film deposited on the oxynitride film. There is also provided a method of fabricating a nitride semiconductor laser device having a cavity with a facet coated with a coating film, including the steps of: providing cleavage to form the facet of the cavity; and coating the facet of the cavity with a coating film formed of an oxynitride film deposited adjacent to the facet of the cavity and an oxide film deposited on the oxynitride film.

摘要翻译： 提供了一种具有涂覆有涂膜的发光部分的氮化物半导体发光器件，该发光部分由氮化物半导体形成，与发光部分接触的涂膜由邻近沉积的氮氧化物膜形成 发光部分和沉积在氧氮化物膜上的氧化膜。 还提供了一种制造氮化物半导体激光器件的方法，该器件具有具有涂覆有涂膜的小面的空腔，包括以下步骤：提供切割以形成腔的小平面; 并用由邻近腔的沉积物沉积的氧氮化物膜和沉积在氧氮化物膜上的氧化膜形成的涂膜涂覆空腔的小面。

公开(公告)号：US20060133442A1

公开(公告)日：2006-06-22

申请号：US11311138

申请日：2005-12-20

申请人： Masahumi Kondou ,  Takeshi Kamikawa ,  Yoshinobu Kawaguchi

发明人： Masahumi Kondou ,  Takeshi Kamikawa ,  Yoshinobu Kawaguchi

IPC分类号： H01S5/00

CPC分类号： H01S5/028 ,  B82Y20/00 ,  H01S5/0021 ,  H01S5/0281 ,  H01S5/0282 ,  H01S5/2231 ,  H01S5/34333

摘要： An adhesion layer of a hexagonal crystal is laid on a facet an optical resonator of a nitride semiconductor laser bar having a nitride-based III-V group compound semiconductor layer, and a facet coat is laid on the adhesion layer. In this way, a structure in which the facet coat is laid on the adhesion layer is obtained.

摘要翻译： 在具有氮化物III-V族化合物半导体层的氮化物半导体激光棒的光谐振器的面上放置六方晶的粘附层，并且在该粘合层上铺设小面涂层。 以这种方式，获得其中将小面涂层铺设在粘合层上的结构。

公开(公告)号：US20060038166A1

公开(公告)日：2006-02-23

申请号：US11206222

申请日：2005-08-18

申请人： Yuhzoh Tsuda ,  Takeshi Kamikawa

发明人： Yuhzoh Tsuda ,  Takeshi Kamikawa

IPC分类号： H01L29/06

CPC分类号： H01S5/34333 ,  B82Y20/00 ,  H01L33/007 ,  H01S5/0207 ,  H01S5/3202

摘要： A first region and a second region that has a defect density of which the value is higher than that of the first region are respectively formed so as to be aligned in stripe form in the direction parallel to the direction in which a dug out region extends, where atoms that terminate the surface of the first region are different from atoms that terminate the surface of the aforementioned second region, and the dug out region includes the first region and the second region.

摘要翻译： 具有比第一区域的缺陷密度高的缺陷密度的第一区域和第二区域分别形成为在平行于挖出区域延伸的方向的方向上以条纹的形式排列， 其中终止第一区域的表面的原子不同于终止上述第二区域的表面的原子，并且该挖出区域包括第一区域和第二区域。

公开(公告)号：US20050250234A1

公开(公告)日：2005-11-10

申请号：US11125111

申请日：2005-05-10

申请人： Takeshi Kamikawa ,  Eiji Yamada ,  Masahiro Araki

发明人： Takeshi Kamikawa ,  Eiji Yamada ,  Masahiro Araki

IPC分类号： H01L21/00 ,  H01L33/20 ,  H01L33/24 ,  H01L33/32 ,  H01S5/02 ,  H01S5/22 ,  H01S5/223 ,  H01S5/323

CPC分类号： H01S5/32341 ,  H01L33/20 ,  H01L33/24 ,  H01L33/32 ,  H01S5/0202 ,  H01S5/0207 ,  H01S5/2201 ,  H01S5/2231 ,  H01S2304/12

摘要： On a processed substrate having an engraved region as a depressed portion formed thereon, a nitride semiconductor thin film is laid. The sectional area occupied by the nitride semiconductor thin film filling the depressed portion is 0.8 times the sectional area of the depressed portion or less.

摘要翻译： 在其上形成有作为凹部的雕刻区域的被处理基板上，放置氮化物半导体薄膜。 填充凹部的氮化物半导体薄膜占据的截面积为凹陷部的截面积的0.8倍以下。

公开(公告)号：US09857059B2

公开(公告)日：2018-01-02

申请号：US14353741

申请日：2012-09-14

申请人： Takeshi Kamikawa

发明人： Takeshi Kamikawa

IPC分类号： F21V7/00 ,  F21V13/08 ,  H01L33/60 ,  F21K9/90 ,  F21V7/22 ,  H01L25/075 ,  H01L23/00 ,  F21Y115/10

CPC分类号： F21V13/08 ,  F21K9/90 ,  F21V7/0066 ,  F21V7/22 ,  F21Y2115/10 ,  H01L24/45 ,  H01L25/0753 ,  H01L33/60 ,  H01L2224/45124 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/45169 ,  H01L2224/48091 ,  H01L2224/48137 ,  H01L2924/01015 ,  H01L2924/01047 ,  H01L2924/181 ,  H01L2933/0091 ,  Y10T29/4913 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2924/00012

摘要： A light emitting device includes a light emitting element, a ceramic substrate including a mounting surface on which the light emitting element is mounted, and a non-mounting surface opposite to the mounting surface and on which the light emitting element is not mounted, and a metal reflection film formed on the non-mounting surface. The metal reflection film reflects light from light emitting element that has passed through the ceramic substrate.

公开(公告)号：US20150029725A1

公开(公告)日：2015-01-29

申请号：US14353741

申请日：2012-09-14

申请人： Takeshi Kamikawa

发明人： Takeshi Kamikawa

IPC分类号： F21V13/08 ,  F21V7/22 ,  F21K99/00 ,  F21V7/00

CPC分类号： F21V13/08 ,  F21K9/90 ,  F21V7/0066 ,  F21V7/22 ,  F21Y2115/10 ,  H01L24/45 ,  H01L25/0753 ,  H01L33/60 ,  H01L2224/45124 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/45169 ,  H01L2224/48091 ,  H01L2224/48137 ,  H01L2924/01015 ,  H01L2924/01047 ,  H01L2924/181 ,  H01L2933/0091 ,  Y10T29/4913 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2924/00012

摘要： A light emitting device includes a light emitting element, a ceramic substrate including a mounting surface on which the light emitting element is mounted, and a non-mounting surface opposite to the mounting surface and on which the light emitting element is not mounted, and a metal reflection film formed on the non-mounting surface. The metal reflection film reflects light from light emitting element that has passed through the ceramic substrate.

摘要翻译： 发光装置包括发光元件，包括安装有发光元件的安装面的陶瓷基板和与安装面相对的非安装面，并且未安装发光元件， 金属反射膜形成在非安装表面上。 金属反射膜反射来自穿过陶瓷基板的发光元件的光。

公开(公告)号：US08742444B2

公开(公告)日：2014-06-03

申请号：US13572178

申请日：2012-08-10

申请人： Masataka Ohta ,  Takeshi Kamikawa

发明人： Masataka Ohta ,  Takeshi Kamikawa

IPC分类号： H01L33/00 ,  H01L21/00

CPC分类号： H01L33/483 ,  H01L33/507 ,  H01L2224/48091 ,  H01L2224/49107 ,  H01L2924/00014

摘要： A semiconductor light-emitting device (A) having a simple configuration whereby it is possible to easily and accurately confirm whether or not ultraviolet light is being emitted, the semiconductor light-emitting device comprising: a semiconductor light-emitting element (1) for emitting ultraviolet light in an ultraviolet or deep ultraviolet region; a cap part (6) having a through-hole (63) in the top part through which ultraviolet light passes and encircling the semiconductor light-emitting element (1); a translucent cover (7) for transmitting ultraviolet light, the translucent cover being disposed so as to hermetically close up the through-hole (63); and a UV-excited phosphor (8) which is excited by ultraviolet light and which emits visible light, the UV-excited phosphor being disposed inside the cap part (6).

摘要翻译： 一种半导体发光装置（A），其具有简单的结构，由此可以容易且准确地确认是否发出紫外线，该半导体发光装置包括：用于发射的半导体发光元件（1） 在紫外线或深紫外线区域的紫外线; 帽部分（6），其在所述顶部部分中具有通孔（63），紫外线穿过所述通孔（63）并围绕所述半导体发光元件（1）; 用于透射紫外光的半透明盖（7），所述半透明盖设置成气密地关闭所述通孔（63）; 和紫外线激发的荧光体（8），所述紫外线激发的荧光体被紫外线激发并发出可见光，所述紫外线激发荧光体设置在所述帽部（6）的内部。