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    Composite negative electrode active material and non-aqueous electrolyte secondary battery
    81.
    发明授权
    Composite negative electrode active material and non-aqueous electrolyte secondary battery 有权
    复合负极活性物质和非水电解质二次电池

    公开(公告)号：US08399131B2

    公开(公告)日：2013-03-19

    申请号：US12602560

    申请日：2008-06-02

    申请人： Yoshiyuki Ozaki ,  Hiroyuki Fujimoto

    发明人： Yoshiyuki Ozaki ,  Hiroyuki Fujimoto

    IPC分类号： H01M4/13

    CPC分类号： H01M4/587

    摘要： Disclosed is a composite negative electrode active material including a graphitizable carbon material containing a layered structure formed of stacked carbon layers partially having a three-dimensional regularity, and a low crystalline carbon material. A negative electrode including the composite negative electrode active material is used to produce a non-aqueous electrolyte secondary battery. The non-aqueous electrolyte secondary battery thus produced has a high energy density and demonstrates a high output/input performance for a long period of time in various environments of high to low temperatures.

    摘要翻译： 公开了一种复合负极活性物质，其包含含有部分具有三维规则性的堆叠碳层形成的层状结构的石墨化碳材料和低结晶性碳材料。 使用包含复合负极活性物质的负极来制造非水电解质二次电池。 由此制造的非水电解质二次电池具有高能量密度，并且在高低温的各种环境中长时间表现出高的输出/输入性能。

    Semiconductor device and method of forming the same
    83.
    发明授权
    Semiconductor device and method of forming the same 有权
    半导体器件及其形成方法

    公开(公告)号：US08310002B2

    公开(公告)日：2012-11-13

    申请号：US12426488

    申请日：2009-04-20

    申请人： Hiroyuki Fujimoto

    发明人： Hiroyuki Fujimoto

    IPC分类号： H01L29/78 ,  H01L21/336

    CPC分类号： H01L29/66666 ,  H01L21/76897 ,  H01L27/24 ,  H01L29/7827

    摘要： A semiconductor device includes a semiconductor substrate, a first diffusion region, a gate insulating film, a gate electrode, a second diffusion region and a contact plug. The semiconductor substrate includes a base and at least a pillar. The first diffusion region is disposed in the base. The gate insulating film covers a side surface of the pillar. The gate electrode is separated from the pillar by the gate insulating film. The second diffusion region is disposed in an upper portion of the pillar. The contact plug is connected to the second diffusion region. The contact plug is connected to the entirety of the top surface of the pillar.

    摘要翻译： 半导体器件包括半导体衬底，第一扩散区，栅绝缘膜，栅电极，第二扩散区和接触插塞。 半导体衬底包括基底和至少一个支柱。 第一扩散区域设置在基底中。 栅极绝缘膜覆盖支柱的侧表面。 栅极通过栅极绝缘膜与柱分离。 第二扩散区域设置在柱的上部。 接触塞连接到第二扩散区。 接触塞连接到柱的整个顶表面。

    Semiconductor device and method of forming semiconductor device
    84.
    发明授权
    Semiconductor device and method of forming semiconductor device 有权
    半导体器件及半导体器件的形成方法

    公开(公告)号：US08294205B2

    公开(公告)日：2012-10-23

    申请号：US12630241

    申请日：2009-12-03

    申请人： Hiroyuki Fujimoto

    发明人： Hiroyuki Fujimoto

    IPC分类号： H01L29/66

    CPC分类号： H01L27/11521 ,  H01L21/823437 ,  H01L21/823487 ,  H01L27/088 ,  H01L29/0692 ,  H01L29/42356 ,  H01L29/42372 ,  H01L29/4238 ,  H01L29/66666 ,  H01L29/7827

    摘要： A semiconductor device includes a first semiconductor pillar, a first insulating film covering a side face of the first semiconductor pillar, a first electrode covering the first insulating film, a second semiconductor pillar, a second insulating film covering a side face of the second semiconductor pillar, and a second electrode covering the second insulating film. The top level of the second electrode is higher than the top level of the first electrode.

    摘要翻译： 半导体器件包括第一半导体柱，覆盖第一半导体柱的侧面的第一绝缘膜，覆盖第一绝缘膜的第一电极，第二半导体柱，覆盖第二半导体柱的侧面的第二绝缘膜 以及覆盖第二绝缘膜的第二电极。 第二电极的顶层高于第一电极的顶层。

    Semiconductor device and method of manufacturing the same
    85.
    发明授权
    Semiconductor device and method of manufacturing the same 失效
    半导体装置及其制造方法

    公开(公告)号：US08278172B2

    公开(公告)日：2012-10-02

    申请号：US12850092

    申请日：2010-08-04

    申请人： Hiroyuki Fujimoto ,  Shinpei Iijima

    发明人： Hiroyuki Fujimoto ,  Shinpei Iijima

    IPC分类号： H01L21/336 ,  H01L21/28

    CPC分类号： H01L27/10876 ,  H01L21/76897 ,  H01L27/10823 ,  H01L27/10855 ,  H01L29/66666 ,  H01L29/7827 ,  H01L29/861

    摘要： A method of forming a semiconductor device includes the following processes. A pillar is formed which stands on a semiconductor substrate. A first insulating film is formed which covers a side surface of the pillar. An upper portion of the first insulating film is removed to expose a side surface of an upper portion of the pillar. A contact plug is formed, which contacts the side surface of the upper portion of the pillar and a top surface of the pillar.

    摘要翻译： 形成半导体器件的方法包括以下处理。 在半导体衬底上形成立柱。 形成覆盖柱的侧面的第一绝缘膜。 去除第一绝缘膜的上部以暴露柱的上部的侧表面。 形成接触插塞，其接触柱的上部的侧表面和柱的顶表面。

    Active material for non-aqueous electrolyte secondary battery, and non-aqueous electrolyte secondary battery comprising it
    86.
    发明授权
    Active material for non-aqueous electrolyte secondary battery, and non-aqueous electrolyte secondary battery comprising it 失效
    非水电解质二次电池用活性物质及其非水电解质二次电池

    公开(公告)号：US08263261B2

    公开(公告)日：2012-09-11

    申请号：US12232826

    申请日：2008-09-24

    申请人： Masanobu Takeuchi ,  Hiroyuki Fujimoto

    发明人： Masanobu Takeuchi ,  Hiroyuki Fujimoto

    IPC分类号： H01M4/13 ,  H01M4/88

    CPC分类号： H01M10/4235 ,  H01M4/364 ,  H01M4/485 ,  H01M10/052

    摘要： Disclosed are an active material for non-aqueous electrolyte secondary battery usable as a power source for backup, which has a large battery capacity and which may prevent the increase in the internal resistance after a storage test; and a non-aqueous electrolyte secondary battery comprising the active material. The active material is used as a positive electrode active material or a negative electrode active material of a non-aqueous electrolyte secondary battery, and this is prepared by adding at least one additive element selected from a group consisting of Al, B, Nb, Ti and W to molybdenum dioxide; and the non-aqueous electrolyte secondary battery comprises the active material.

    摘要翻译： 公开了可用作备用电源的非水电解质二次电池的活性材料，其具有大的电池容量并且可以防止储存试验后的内阻增加; 以及包含活性物质的非水电解质二次电池。 活性物质用作非水电解质二次电池的正极活性物质或负极活性物质，通过添加至少一种选自由Al，B，Nb，Ti W至二氧化钼; 非水电解质二次电池包含活性物质。

    All terrain vehicle
    87.
    发明授权
    All terrain vehicle 有权
    全地形车

    公开(公告)号：US08256563B2

    公开(公告)日：2012-09-04

    申请号：US12604423

    申请日：2009-10-23

    申请人： Yasuhiro Suzuki ,  Takehiko Arai ,  Hiroyuki Fujimoto ,  Yasuhiro Oishi

    发明人： Yasuhiro Suzuki ,  Takehiko Arai ,  Hiroyuki Fujimoto ,  Yasuhiro Oishi

    IPC分类号： B60K11/06

    CPC分类号： B60K5/02 ,  B60K11/06 ,  B60K13/02 ,  B60K17/342 ,  B60K2005/003 ,  B60Y2200/20 ,  B60Y2400/72

    摘要： In an all terrain vehicle, an engine body of an engine unit is positioned along a center line that is perpendicular or substantially perpendicular to a transverse direction of the vehicle. A continuously variable transmission of the engine unit is disposed transversely lateral to the engine body. A center console includes an inner space. The center console is disposed in a transverse center portion of a cabin space. The center console connects a space positioned forward of a front panel and a space positioned under a seat. An intake duct is connected to an upper surface of the engine unit, and extends forward therefrom. The intake duct is at least partially disposed in the interior of the center console. An exhaust duct is connected to the engine unit, and extends rearward therefrom.

    摘要翻译： 在全地形车辆中，发动机单元的发动机体沿着与车辆的横向方向垂直或基本垂直的中心线定位。 发动机单元的无级变速器设置在发动机主体的横向横向。 中央控制台包含内部空间。 中央控制台设置在舱室空间的横向中心部分。 中央控制台连接一个位于前面板前方的空间和一个位于座位下方的空间。 进气管连接到发动机单元的上表面并从其向前延伸。 进气管道至少部分地设置在中控台的内部。 排气管连接到发动机单元并从其向后延伸。

    Semiconductor device and method of forming semiconductor device
    88.
    发明授权
    Semiconductor device and method of forming semiconductor device 有权
    半导体器件及半导体器件的形成方法

    公开(公告)号：US08198661B2

    公开(公告)日：2012-06-12

    申请号：US12637480

    申请日：2009-12-14

    申请人： Hiroyuki Fujimoto

    发明人： Hiroyuki Fujimoto

    IPC分类号： H01L27/108

    CPC分类号： H01L27/10885 ,  H01L27/108 ,  H01L27/10802 ,  H01L27/10876 ,  H01L29/7841

    摘要： A semiconductor device include a semiconductor substrate comprising a substrate body, a base over the substrate body and a pillar over a first region of the base; a buried line adjacent to a side surface of the base; a first diffusion layer over a second region of the base; a second diffusion layer over the pillar, the second diffusion layer being higher in level than the first diffusion layer; and a third diffusion layer disposed between the buried line and the semiconductor substrate. The third diffusion layer is different in level from the first diffusion layer. The top level of the third diffusion layer is lower than the top level of the first diffusion layer.

    摘要翻译： 半导体器件包括半导体衬底，其包括衬底主体，衬底上的基底和位于基底的第一区域上的柱; 邻近基底的侧表面的掩埋线; 在所述基底的第二区域上的第一扩散层; 在所述柱上方的第二扩散层，所述第二扩散层的水平高于所述第一扩散层; 以及设置在所述掩埋线和所述半导体衬底之间的第三扩散层。 第三扩散层的水平与第一扩散层不同。 第三扩散层的顶层低于第一扩散层的顶层。

    Semiconductor device with transistor, conductive pad, and contact
    89.
    发明授权
    Semiconductor device with transistor, conductive pad, and contact 有权
    具有晶体管，导电焊盘和触点的半导体器件

    公开(公告)号：US08110872B2

    公开(公告)日：2012-02-07

    申请号：US12621104

    申请日：2009-11-18

    申请人： Hiroyuki Fujimoto

    发明人： Hiroyuki Fujimoto

    IPC分类号： H01L31/119

    CPC分类号： H01L21/823487 ,  H01L27/10876 ,  H01L29/41741 ,  H01L29/456 ,  H01L29/66666 ,  H01L29/7827

    摘要： A semiconductor device includes a transistor, a conductive pad, and a contact. The conductive pad is electrically connected to the transistor. The conductive pad may include, but is not limited to, a first region and a second region. The contact is electrically connected to the conductive pad. At least a main part of the first region overlaps the transistor in plan view. At least a main part of the second region does not overlap the transistor in plan view. At least a main part of the contact overlaps the second region in plan view. The at least main part of the contact does not overlap the first region in plan view. The at least main part of the contact does not overlap the transistor in plan view.

    摘要翻译： 半导体器件包括晶体管，导电焊盘和触点。 导电焊盘电连接到晶体管。 导电焊盘可以包括但不限于第一区域和第二区域。 触点电连接到导电焊盘。 第一区域的至少主要部分在平面图中与晶体管重叠。 第二区域的至少主要部分在平面图中不与晶体管重叠。 在平面图中，至少接触的主要部分与第二区域重叠。 在平面图中，接触件的至少主要部分不与第一区域重叠。 接触的至少主要部分在平面图中不与晶体管重叠。