公开(公告)号：US07838968B2

公开(公告)日：2010-11-23

申请号：US11293111

申请日：2005-12-05

申请人： Hongyong Zhang ,  Satoshi Teramoto

发明人： Hongyong Zhang ,  Satoshi Teramoto

IPC分类号： H01L23/58 ,  H01L27/01 ,  H01L29/04

CPC分类号： H01L21/31111 ,  G02F1/136227 ,  H01L21/02532 ,  H01L21/02675 ,  H01L21/2026 ,  H01L21/76801 ,  H01L21/76802 ,  H01L27/12 ,  H01L27/1248

摘要： There are disclosed TFTs having improved reliability. An interlayer dielectric film forming the TFTs is made of a silicon nitride film. Other interlayer dielectric films are also made of silicon nitride. The stresses inside the silicon nitride films forming these interlayer dielectric films are set between −5×109 and 5×109 dyn/cm2. This can suppress peeling of the interlayer dielectric films and difficulties in forming contact holes. Furthermore, release of hydrogen from the active layer can be suppressed. In this way, highly reliable TFTs can be obtained.

摘要翻译： 公开了具有提高的可靠性的TFT。 形成TFT的层间电介质膜由氮化硅膜构成。 其它层间绝缘膜也由氮化硅制成。 形成这些层间电介质膜的氮化硅膜内的应力设定在-5×109〜5×10 9 dyn / cm 2之间。 这可以抑制层间绝缘膜的剥离和形成接触孔的困难。 此外，可以抑制从活性层释放氢。 以这种方式，可以获得高度可靠的TFT。

公开(公告)号：US07709837B2

公开(公告)日：2010-05-04

申请号：US11483108

申请日：2006-07-10

申请人： Shunpei Yamazaki ,  Satoshi Teramoto ,  Jun Koyama ,  Yasushi Ogata ,  Masahiko Hayakawa ,  Mitsuaki Osame ,  Hisashi Ohtani ,  Toshiji Hamatani

发明人： Shunpei Yamazaki ,  Satoshi Teramoto ,  Jun Koyama ,  Yasushi Ogata ,  Masahiko Hayakawa ,  Mitsuaki Osame ,  Hisashi Ohtani ,  Toshiji Hamatani

IPC分类号： H01L31/06

CPC分类号： H01L21/02672 ,  H01L21/02532 ,  H01L21/02686 ,  H01L21/2022 ,  H01L21/2026 ,  H01L21/3226 ,  H01L27/12 ,  H01L27/1277 ,  H01L29/04 ,  H01L29/4908 ,  H01L29/66757 ,  H01L29/78621 ,  H01L29/78675

摘要： Nickel is selectively held in contact with a particular region of an amorphous silicon film. Crystal growth parallel with a substrate is effected by performing a heat treatment. A thermal oxidation film is formed on the silicon film by performing a heat treatment in an oxidizing atmosphere containing a halogen element. During this step, in the silicon film, impurities included such as oxygen or chlorine, are segregated with extending along the crystal growth, the crystallinity is improved, and the gettering of nickel element proceeds. A thin-film transistor is formed so that the direction connecting source and drain regions coincides with the above crystal growth direction. As a result, a TFT having superior characteristics such as a mobility larger than 200 cm2/Vs and an S value smaller than 100 mV/dec. can be obtained.

摘要翻译： 镍选择性地保持与非晶硅膜的特定区域接触。 通过进行热处理来实现与基板平行的晶体生长。 通过在含有卤素元素的氧化气氛中进行热处理，在硅膜上形成热氧化膜。 在该步骤中，在硅膜中，包含的杂质如氧或氯的杂质沿着晶体生长延伸而分离，结晶度提高，并且镍元素的吸杂进行。 形成薄膜晶体管，使得连接源极和漏极区域的方向与上述晶体生长方向一致。 结果，具有诸如迁移率大于200cm2 / Vs和S值小于100mV / dec的优异特性的TFT。 可以获得。

公开(公告)号：US07691692B2

公开(公告)日：2010-04-06

申请号：US12232433

申请日：2008-09-17

申请人： Shunpei Yamazaki ,  Hisashi Ohtani ,  Hiroyuki Shimada ,  Mitsunori Sakama ,  Hisashi Abe ,  Satoshi Teramoto

发明人： Shunpei Yamazaki ,  Hisashi Ohtani ,  Hiroyuki Shimada ,  Mitsunori Sakama ,  Hisashi Abe ,  Satoshi Teramoto

IPC分类号： H01L21/00

CPC分类号： H01L21/02686 ,  C23C16/303 ,  C23C16/345 ,  C23C16/402 ,  C23C16/54 ,  H01L21/02422 ,  H01L21/02532 ,  H01L21/2022 ,  H01L21/67155 ,  H01L21/67207 ,  H01L27/1281 ,  H01L29/41733 ,  Y10S438/905 ,  Y10S438/908

摘要： A substrate processing apparatus includes a plurality of evacuable treatment chambers connected to one another via an evacuable common chamber, and the common chamber is provided with means for transporting a substrate between each treatment chamber. More specifically, a substrate processing apparatus includes a plurality of evacuable treatment chambers, at least one of said treatment chambers having a film formation function through a vapor phase reaction therein, at least one of said treatment chambers having an annealing function with light irradiation and at least one of said treatment chambers having a heating function therein. The apparatus also has a common chamber through which said plurality of evacuable treatment chambers are connected to one another, and a transportation means provided in said common chamber for transporting a substrate between each treatment chamber.

摘要翻译： 基板处理装置包括经由可抽出的公共室彼此连接的多个可抽出的处理室，公共室设有用于在每个处理室之间输送基板的装置。 更具体地，基板处理装置包括多个可排除的处理室，至少一个所述处理室通过其中的气相反应具有成膜功能，所述处理室中的至少一个具有光照射的退火功能， 所述处理室中的至少一个具有加热功能。 所述设备还具有公共室，所述多个可抽出的处理室通过所述公共室彼此连接，以及设置在所述公共室中的输送装置，用于在每个处理室之间输送基板。

公开(公告)号：US07667817B2

公开(公告)日：2010-02-23

申请号：US11782042

申请日：2007-07-24

申请人： Hongyong Zhang ,  Satoshi Teramoto

发明人： Hongyong Zhang ,  Satoshi Teramoto

IPC分类号： G02F1/1339 ,  G02F1/1345

CPC分类号： G02F1/13392 ,  G02F1/1334 ,  G02F1/1339 ,  G02F1/1341 ,  G02F1/13454 ,  G02F2001/133388 ,  G09G3/3648

摘要： A laminated spacer portion formed by laminating various thin films that constitute thin-film transistors is disposed in peripheral driver circuits. As a result, even in a structure in which part of a sealing member is disposed above the peripheral driver circuits, pressure exerted from spacers in the sealing member is concentrated on the laminated spacer portion, whereby destruction of a thin-film transistor of the peripheral driver circuits can be prevented caused by the pressure from the sealing portion.

摘要翻译： 通过层叠各种构成薄膜晶体管的薄膜形成的层叠间隔部分设置在外围驱动电路中。 结果，即使在密封构件的一部分设置在外围驱动电路的上方的结构中，由密封构件中的间隔物施加的压力集中在层叠间隔部分上，从而破坏周边的薄膜晶体管 可以防止来自密封部的压力引起的驱动电路。

公开(公告)号：US07646022B2

公开(公告)日：2010-01-12

申请号：US11382412

申请日：2006-05-09

申请人： Hongyong Zhang ,  Satoshi Teramoto

发明人： Hongyong Zhang ,  Satoshi Teramoto

IPC分类号： H01L27/14 ,  H01L29/04 ,  H01L29/15 ,  H01L31/036

CPC分类号： G02F1/136227 ,  G02F1/136209 ,  G02F1/136213

摘要： The present invention provides an active matrix type display device having a high aperture ratio and a required auxiliary capacitor. A source line and a gate line are overlapped with part of a pixel electrode. This overlapped region functions to be a black matrix. Further, an electrode pattern made of the same material as the pixel electrode is disposed to form the auxiliary capacitor by utilizing the pixel electrode. It allows a required value of auxiliary capacitor to be obtained without dropping the aperture ratio. Also, it allows the electrode pattern to function as a electrically shielding film for suppressing the cross-talk between the source and gate lines and the pixel electrode.

摘要翻译： 本发明提供一种具有高开口率的有源矩阵型显示装置和所需的辅助电容器。 源极线和栅极线与像素电极的一部分重叠。 该重叠区域用作黑矩阵。 此外，通过利用像素电极设置由与像素电极相同材料制成的电极图案以形成辅助电容器。 允许在不降低开口率的情况下获得所需的辅助电容值。 此外，它允许电极图案用作用于抑制源极和栅极线和像素电极之间的串扰的电屏蔽膜。

公开(公告)号：US07619282B2

公开(公告)日：2009-11-17

申请号：US11276439

申请日：2006-02-28

申请人： Shunpei Yamazaki ,  Satoshi Teramoto

发明人： Shunpei Yamazaki ,  Satoshi Teramoto

IPC分类号： H01L29/72

CPC分类号： H01L27/13 ,  H01L27/0688 ,  H01L27/1203 ,  H01L27/124 ,  H01L29/78621 ,  H03H9/0547

摘要： There is disclosed a hybrid circuit in which a circuit formed of TFTs in integrated with an RF filter. The TFTs are fabricated on a quartz substrate. A ceramic filter forming the RF filter is fabricated on another substrate. Terminals extend through the quartz substrate. The TFTs are connected with the ceramic filter via the terminals. Thus, an RF module is constructed.

摘要翻译： 公开了一种混合电路，其中由与RF滤波器集成的TFT形成的电路。 TFT制造在石英衬底上。 形成RF滤波器的陶瓷滤波器被制造在另一基板上。 端子延伸穿过石英衬底。 TFT通过端子与陶瓷滤波器连接。 因此，构建了RF模块。

公开(公告)号：US07615786B2

公开(公告)日：2009-11-10

申请号：US11979127

申请日：2007-10-31

申请人： Yasuhiko Takemura ,  Satoshi Teramoto

发明人： Yasuhiko Takemura ,  Satoshi Teramoto

IPC分类号： H01L27/14

CPC分类号： H01L27/1248 ,  H01L27/1255 ,  H01L29/66757 ,  H01L29/78621 ,  H01L2029/7863

摘要： A thin film transistor of the present invention has an active layer including at least source, drain and channel regions formed on an insulating surface. A high resistivity region is formed between the channel region and each of the source and drain regions. A film capable of trapping positive charges therein is provided on at least the high resistivity region so that N-type conductivity is induced in the high resistivity region. Accordingly, the reliability of N-channel type TFT against hot electrons can be improved.

摘要翻译： 本发明的薄膜晶体管具有至少包括形成在绝缘表面上的源极，漏极和沟道区的有源层。 在沟道区域和源极和漏极区域中的每一个之间形成高电阻率区域。 至少在高电阻率区域上设置能够俘获正电荷的膜，使得在高电阻率区域中产生N型导电性。 因此，可以提高N沟道型TFT对热电子的可靠性。

公开(公告)号：US07602020B2

公开(公告)日：2009-10-13

申请号：US11522376

申请日：2006-09-18

申请人： Yasuhiko Takemura ,  Hongyong Zhang ,  Satoshi Teramoto

发明人： Yasuhiko Takemura ,  Hongyong Zhang ,  Satoshi Teramoto

IPC分类号： H01L27/12

CPC分类号： H01L27/12 ,  H01L27/124 ,  H01L29/458 ,  H01L29/4908 ,  H01L29/66757 ,  H01L29/78621 ,  H01L29/78696 ,  Y10S257/90

摘要： A thin film transistor device reduced substantially—in resistance between the source and the drain by incorporating a silicide film, which is fabricated by a process comprising forming a gate insulator film and a gate contact on a silicon substrate, anodically oxidizing the gate contact, covering an exposed surface of the silicon semiconductor with a metal, and irradiating an intense light such as a laser beam to the metal film either from the upper side or from an insulator substrate side to allow the metal coating to react with silicon to obtain a silicide film.

摘要翻译： 薄膜晶体管器件通过引入硅化物膜来降低源极和漏极之间的基本上的电阻，该硅化物膜通过包括在硅衬底上形成栅极绝缘膜和栅极接触的方法制造，阳极氧化栅极接触，覆盖 使用金属的硅半导体的暴露表面，并且从上侧或从绝缘体基板侧向金属膜照射强光如激光束，以允许金属涂层与硅反应以获得硅化物膜 。

公开(公告)号：US20090072235A1

公开(公告)日：2009-03-19

申请号：US12241705

申请日：2008-09-30

申请人： Hongyong Zhang ,  Shunpei Yamazaki ,  Satoshi Teramoto ,  Yoshiharu Hirakata

发明人： Hongyong Zhang ,  Shunpei Yamazaki ,  Satoshi Teramoto ,  Yoshiharu Hirakata

IPC分类号： H01L29/04

CPC分类号： G02F1/1339 ,  G02F1/1345 ,  G02F1/13454 ,  G02F1/136277 ,  G09G3/3648 ,  G09G2320/0252

摘要： A display device of the present invention includes a first substrate and a second substrate opposed to each other, a liquid crystal interposed between the first substrate and the second substrate, an active matrix circuit and a driving circuit each comprising a thin film transistor formed over the first substrate, a resin layer formed over the active matrix circuit and the driving circuit, a spacer formed over the active matrix circuit, a sealing material formed over the driving circuit, and a filler included in the sealing material and in contact with the resin layer.

摘要翻译： 本发明的显示装置包括彼此相对的第一基板和第二基板，插入在第一基板和第二基板之间的液晶，有源矩阵电路和驱动电路，各自包括形成在第一基板和第二基板上的薄膜晶体管 第一基板，在有源矩阵电路和驱动电路上形成的树脂层，形成在有源矩阵电路上的间隔物，形成在驱动电路上的密封材料，以及包含在密封材料中并与树脂层接触的填料 。

公开(公告)号：US20090029509A1

公开(公告)日：2009-01-29

申请号：US12232433

申请日：2008-09-17

申请人： Shunpei Yamazaki ,  Hisashi Ohtani ,  Hiroyuki Shimada ,  Mitsunori Sakama ,  Hisashi Abe ,  Satoshi Teramoto

发明人： Shunpei Yamazaki ,  Hisashi Ohtani ,  Hiroyuki Shimada ,  Mitsunori Sakama ,  Hisashi Abe ,  Satoshi Teramoto

IPC分类号： H01L21/336

CPC分类号： H01L21/02686 ,  C23C16/303 ,  C23C16/345 ,  C23C16/402 ,  C23C16/54 ,  H01L21/02422 ,  H01L21/02532 ,  H01L21/2022 ,  H01L21/67155 ,  H01L21/67207 ,  H01L27/1281 ,  H01L29/41733 ,  Y10S438/905 ,  Y10S438/908

摘要： A substrate processing apparatus includes a plurality of evacuable treatment chambers connected to one another via an evacuable common chamber, and the common chamber is provided with means for transporting a substrate between each treatment chamber. More specifically, a substrate processing apparatus includes a plurality of evacuable treatment chambers, at least one of said treatment chambers having a film formation function through a vapor phase reaction therein, at least one of said treatment chambers having an annealing function with light irradiation and at least one of said treatment chambers having a heating function therein. The apparatus also has a common chamber through which said plurality of evacuable treatment chambers are connected to one another, and a transportation means provided in said common chamber for transporting a substrate between each treatment chamber.