摘要:
A method of producing a semiconductor device according to the present invention comprises steps of: (A) forming trenches (13) on the front surface (FS) of a semiconductor substrate (11) on the back surface (BS) of which a nitride film (12b) is formed; (B) depositing an insulating film (15) to bury the trenches (13); (C) removing the nitride film (12b) on the back surface (BS) of the semiconductor substrate (11) after the step (B); and (D) annealing before the insulating film (15) is etched after the step (C).
摘要:
According to one embodiment, an information processing apparatus includes a display unit on which an antenna is mounted, an LCD provided on the display unit, and a controller which controls the amount of radiation of an electromagnetic wave from the antenna, when the antenna is located in a downward direction of an image displayed on the LCD.
摘要:
According to one embodiment, an electronic apparatus includes a conductive layer provided on an outer surface of a housing, a conductive member provided inside the housing, and a connecting component attached to the housing. The housing is provided with a through hole which causes the inside of the housing to communicate with the outside. The connecting component has conductivity, and is provided with a major diameter section and a minor diameter section. The major diameter section is formed larger than the through hole, is opposed to the conductive layer from outside the housing, and is electrically connected to the conductive layer. The minor diameter section is formed smaller than the through hole, is inserted in the through hole to reach the inside of the housing, and is electrically connected to the conductive member.
摘要:
According to an embodiment, a laptop personal computer comprises a display housing with a display unit, a main body housing which houses a radio communication module, a connecting unit which rotatably connects between the display housing and the main body housing, a first radio communication antenna as a main antenna which is formed at an end part of the display housing almost orthogonal to the connecting unit, a second radio communication antenna as a sub antenna which is formed at an end part of the display housing in almost parallel with the connecting unit, the second radio communication antenna making a pair with the first radio communication antenna, a first cable which connects the first radio communication antenna to the radio communication module through the connecting unit, and a second cable which connects the second radio communication antenna to the radio communication module through the connecting unit.
摘要:
Information equipment according to an embodiment includes a display housing with a display unit, a first radio communication antenna disposed at an end part of the display housing, a second radio communication antenna using a frequency band adjacent to or overlapped with that of the first radio communication antenna, and a third radio communication antenna disposed at an end part between the first and the second radio communication antennas, and uses a frequency band not adjacent to nor overlapped with those of the first and the second radio communication antennas.
摘要:
An electronic apparatus includes a housing that has a corner, a first side extending from the corner, and a second side extending from the corner, and an antenna provided in the housing. The antenna is formed in an area located along the first side and apart from the corner by at least 15% of a size of the first side.
摘要:
A method for producing a semiconductor device includes the steps of forming silicon crystal nuclei on a substrate, depositing first amorphous silicon, depositing second amorphous silicon, and crystallizing the first amorphous silicon and the second amorphous silicon by allowing the crystal nuclei to grow in the solid phase.
摘要:
A semiconductor device manufacturing method includes: a process of forming an isolation trench on the surface of a semiconductor substrate; a process of forming a thermally-oxidized film on the surface of the isolation trench; a process of depositing a silicon oxynitride film on the semiconductor substrate via the thermally-oxidized film; a process of heat-treating the silicon oxynitride film in an oxidizing atmosphere; and a process of etching the top of the thermally-oxidized film and the heat-treated silicon oxynitride film.
摘要:
There is disclosed a plasma processing apparatus for making a gas including hydrocarbon plasma and forming a film including carbons on an object to be coated with a film. The apparatus includes a first reaction chamber for performing a first plasma process on the object to be deposited, a second reaction chamber for performing a second plasma process on an exhaust gas after the first plasma process is performed, and an exhaust pump for exhausting a gas to the outside after the second plasma process is performed. The first reaction chamber is connected to the exhaust pump via the second reaction chamber.
摘要:
An information processing apparatus includes an antenna corresponding to a first wireless communication scheme, a first wireless communication unit which executes wireless communication by the first wireless communication scheme using the antenna corresponding to the first wireless communication scheme, a plurality of antennas corresponding to a second wireless communication scheme, a second wireless communication unit which executes wireless communication by a second wireless communication scheme using the plurality of antennas corresponding to the second wireless communication scheme, and a control unit which executes processing of stopping use of the plurality of antennas corresponding to the second wireless communication scheme, when the first wireless communication unit and the second wireless communication unit are operating, in accordance with isolation levels between the antenna corresponding to the first wireless communication scheme and the plurality of antennas corresponding to the second wireless communication scheme, in ascending order of the isolation level.