摘要:
A method for determining symbols PSK modulated on an optical carrier includes interfering a first polarization component of the modulated optical carrier and a reference optical carrier in a first optical mixer and interfering the first polarization component of the modulated optical carrier and the reference with a different relative phase in a second optical mixer. The method also includes sampling the interfered carriers from the first optical mixer to produce first digital sampled values and sampling the interfered carriers from the second optical mixer to produce second digital sampled values. The first and second digital sampled values of a sampling period form a first complex sampling value thereof. The method also includes offsetting a phase of a complex signal value corresponding to each first complex sampling value to correct for a phase error caused by a frequency offset between the modulated and reference optical carriers.
摘要:
Apparatus including: a substrate layer having a substantially planar top surface; an optically conductive peak located and elongated on, and spanning a first thickness measured in a direction generally away from, the top surface; the optically conductive peak having first and second lateral walls each including distal and proximal lateral wall portions, the proximal lateral wall portions intersecting the top surface; and first and second sidewall layers located on the distal lateral wall portions, the sidewall layers not intersecting the top surface and spanning a second thickness that is less than the first thickness measured in the same direction.
摘要:
The present invention provides an optical beamforming RF transmitter. In one embodiment, the optical beamforming RF transmitter includes an optical WDM splitter having an input and a plurality of outputs. The optical beamforming RF transmitter also includes an array of antennas, where each antenna has an optical input configured to drive the corresponding antenna, and an array of optical modulators, such that each modulator has an output connected to a corresponding one of the antennas and an input connected to one of the outputs of the optical WDM splitter. The optical beamforming RF transmitter further includes a mode-locked laser having an output optically coupled to the input of the optical WDM splitter.
摘要:
Apparatus comprising: a first compound semiconductor composition layer doped to have a first charge carrier polarity; a second compound semiconductor composition layer doped to have a second charge carrier polarity and located on the first layer; a third compound semiconductor composition layer doped to have the first charge carrier polarity and located on the second layer; a base electrode on the second layer; and a spacer ring interposed between and defining a charge carrier access path distance between the base electrode and the third layer, the path distance being within a range of between about 200 Å and about 1000 Å. Techniques for making apparatus. Apparatus is useful as a heterobipolar transistor, particularly for high frequency applications.
摘要:
A receiver for coherent detection of a PSK modulated optical carrier includes an optical detector, digital-to-analog converters, and a digital module. The optical detector is configured to mix the modulated optical carrier with two phase components of a reference optical carrier and to produce analog output signals representative of optical signals produced by said mixing. The digital-to-analog converters are connected to receive the analog output signals and to produce digital signals from the received analog output signals. The digital module is connected to receive the digital signals and to perform one of compensating the received digital signals for a conjugate phase misalignment between the mixed components, extracting phase of the received digital signals, and estimating a frequency offset between the two carriers from the received digital signals.
摘要:
An optical integrated circuit comprises a semiconductor body, a semiconductor optical waveguide located on the body, and a bipolar phototransistor located on and optically coupled to the waveguide. In a preferred embodiment, the base region of the transistor is configured to absorb radiation propagating in the waveguide, but the emitter and collector regions are both configured not to absorb the propagating radiation. In a further preferred embodiment, the waveguide is configured to guide the radiation along a propagation axis therein, and the transistor makes an elongated footprint along the waveguide, the footprint being elongated along the direction of the propagation axis. In another preferred embodiment, the footprint is at least three times longer along the propagation axis than along a direction perpendicular thereto.
摘要:
A transceiver includes a transmitter, a receiver, and an electrical feedback line. The transmitter has a quadrature-modulator and is configurable to compensate inphase/quadrature phase imbalances produced by hardware of the transmitter. The quadrature-modulator is configured to quadrature-modulate a carrier wave. The receiver has a quadrature-demodulator and is configurable to compensate for inphase/quadrature phase imbalances produced by hardware in the receiver. The quadrature-demodulator is configured to demodulate a quadrature-demodulated carrier. The electrical feedback line connects an output of the transmitter to an input of the receiver.
摘要:
An adaptive optical parallel equalizer architecture is based on a controllable optical modulator device to realize an optical FIR (finite-impulse-response) filter including a plurality of coefficient taps in order to have independent control of each optical FIR filter coefficient. A unique adaptive opto-electronic LMS (least mean squares) process is utilized to generate an electronic error signal utilized to control the plurality of parallel tap coefficients of the optical parallel equalizer. The electronic error signal is used as the optimization criterion because the electronic signal after photo-detection is needed to achieve any measurable performance in terms of bit error rate (BER). In a specific embodiment, the controllable optical parallel FIR filter is realized by employing an optical vector modulator. The optical vector modulator is realized by splitting a supplied input optical signal into a plurality of parallel similar optical signals, controllably adjusting the phase and/or amplitude of each of the plurality of optical signals and delaying the resulting optical signals in a prescribed manner relative to one another. Then, the “delayed” signals are combined to yield the optical signal comprising the vector modulated input optical signal to be transmitted as an output. In one particular embodiment, both the phase and amplitude is adjusted of each of the plurality of parallel optical signals, and the error control signals for effecting the adjustments are generated in response to the optical modulator optical output signal utilizing the unique Opto-Electronic LMS process.
摘要:
A method for fabricating a bipolar transistor includes forming a vertical sequence of semiconductor layers, forming an implant mask on the last formed semiconductor layer, and implanting dopant ions into a portion of one or more of the semiconductor layers. The sequence of semiconductor layers includes a collector layer, a base layer that is in contact with the collector layer, and an emitter layer that is in contact with the base layer. The implanting uses a process in which the implant mask stops dopant ions from penetrating into a portion of the sequence of layers.
摘要:
Microelectronic apparatus having protection against high frequency crosstalk radiation, comprising: a planar insulating substrate; an active semiconductor electronic device located over a first region of the insulating substrate; and a doped semiconductor located in a second region of the insulating substrate substantially surrounding the first region. Apparatus further comprising a dissipative conductor overlaying and adjacent to the doped semiconductor. Apparatus additionally comprising metallic test probe contacts making electrical connections with the active semiconductor electronic device. Application of the apparatus to dissipate crosstalk radiation having a center frequency within a range between about 1 gigahertz and about 1,000 gigahertz. Methods for making the apparatus.