摘要:
Apparatus including: a substrate layer having a substantially planar top surface; an optically conductive peak located and elongated on, and spanning a first thickness measured in a direction generally away from, the top surface; the optically conductive peak having first and second lateral walls each including distal and proximal lateral wall portions, the proximal lateral wall portions intersecting the top surface; and first and second sidewall layers located on the distal lateral wall portions, the sidewall layers not intersecting the top surface and spanning a second thickness that is less than the first thickness measured in the same direction.
摘要:
The present invention provides an optical beamforming RF transmitter. In one embodiment, the optical beamforming RF transmitter includes an optical WDM splitter having an input and a plurality of outputs. The optical beamforming RF transmitter also includes an array of antennas, where each antenna has an optical input configured to drive the corresponding antenna, and an array of optical modulators, such that each modulator has an output connected to a corresponding one of the antennas and an input connected to one of the outputs of the optical WDM splitter. The optical beamforming RF transmitter further includes a mode-locked laser having an output optically coupled to the input of the optical WDM splitter.
摘要:
Apparatus comprising: a first compound semiconductor composition layer doped to have a first charge carrier polarity; a second compound semiconductor composition layer doped to have a second charge carrier polarity and located on the first layer; a third compound semiconductor composition layer doped to have the first charge carrier polarity and located on the second layer; a base electrode on the second layer; and a spacer ring interposed between and defining a charge carrier access path distance between the base electrode and the third layer, the path distance being within a range of between about 200 Å and about 1000 Å. Techniques for making apparatus. Apparatus is useful as a heterobipolar transistor, particularly for high frequency applications.
摘要:
An optical integrated circuit comprises a semiconductor body, a semiconductor optical waveguide located on the body, and a bipolar phototransistor located on and optically coupled to the waveguide. In a preferred embodiment, the base region of the transistor is configured to absorb radiation propagating in the waveguide, but the emitter and collector regions are both configured not to absorb the propagating radiation. In a further preferred embodiment, the waveguide is configured to guide the radiation along a propagation axis therein, and the transistor makes an elongated footprint along the waveguide, the footprint being elongated along the direction of the propagation axis. In another preferred embodiment, the footprint is at least three times longer along the propagation axis than along a direction perpendicular thereto.
摘要:
A transceiver includes a transmitter, a receiver, and an electrical feedback line. The transmitter has a quadrature-modulator and is configurable to compensate inphase/quadrature phase imbalances produced by hardware of the transmitter. The quadrature-modulator is configured to quadrature-modulate a carrier wave. The receiver has a quadrature-demodulator and is configurable to compensate for inphase/quadrature phase imbalances produced by hardware in the receiver. The quadrature-demodulator is configured to demodulate a quadrature-demodulated carrier. The electrical feedback line connects an output of the transmitter to an input of the receiver.
摘要:
A method for fabricating a bipolar transistor includes forming a vertical sequence of semiconductor layers, forming an implant mask on the last formed semiconductor layer, and implanting dopant ions into a portion of one or more of the semiconductor layers. The sequence of semiconductor layers includes a collector layer, a base layer that is in contact with the collector layer, and an emitter layer that is in contact with the base layer. The implanting uses a process in which the implant mask stops dopant ions from penetrating into a portion of the sequence of layers.
摘要:
Microelectronic apparatus having protection against high frequency crosstalk radiation, comprising: a planar insulating substrate; an active semiconductor electronic device located over a first region of the insulating substrate; and a doped semiconductor located in a second region of the insulating substrate substantially surrounding the first region. Apparatus further comprising a dissipative conductor overlaying and adjacent to the doped semiconductor. Apparatus additionally comprising metallic test probe contacts making electrical connections with the active semiconductor electronic device. Application of the apparatus to dissipate crosstalk radiation having a center frequency within a range between about 1 gigahertz and about 1,000 gigahertz. Methods for making the apparatus.
摘要:
A feedforward linearizer includes a signal cancellation circuit and an error cancellation circuit. The signal cancellation circuit includes a tap delay line, that delay the input signal by a predetermined time delay so as to provide several delayed versions of the input signal. Each delayed version of the input signal is weighted by a tap coefficient. The weighted signals are then added together and fed to the power amplifier. The tap coefficients are derived such that the signals traveling through the upper and lower branch of the signal cancellation loop are aligned and that the output signal of the power amplifier is equalized.
摘要:
A GaAs-based self-aligned laser with emission wavelength in the approximate wavelength regime 0.87-1.1 .mu.m is disclosed. The laser is a strained layer QW laser and is readily manufacturable. Preferred embodiments of the inventive laser do not comprise Al-containing semiconductor alloy. Lasers according to the invention can for instance be used advantageously as 0.98 .mu.m pump sources for Er-doped fiber amplifiers.
摘要:
Disclosed is an advantageous method of making ridge-waveguide lasers. The method is a self-aligned method that does not comprise any critical alignment steps. Thus it is useful for making lasers that have a very narrow ridge waveguide. Such lasers are desirable because they can suppress lateral higher order modes.