摘要:
A magnetic field sensing apparatus including a substrate, first, second, and third magnetic field sensing units, and a switching circuit is provided. The substrate has a surface, and has a first inclined surface and a second inclined surface. The first magnetic field sensing unit includes a plurality of magnetoresistance sensors connected together to form a Wheatstone full bridge and disposed on the surface. The second magnetic field sensing unit includes a plurality of magnetoresistance sensors connected together to form a Wheatstone half bridge and disposed on the first inclined surface. The third magnetic field sensing unit includes a plurality of magnetoresistance sensors connected together to form a Wheatstone half bridge and disposed on the second inclined surface. The switching circuit electrically connects the second magnetic field sensing unit and the third magnetic field sensing unit. A magnetic field sensing module is also provided.
摘要:
In one embodiment, a TMR field sensor utilizes existing one or more self-test current lines in a configuration to extend magnetic field measurement range without sacrificing measurement sensitivity. The self-test current lines are energized to facilitate magnetic field measurement when the measured magnetic field reaches a threshold. The magnetic field created by self-test coil opposes an external magnetic field being measured to keep the net magnetic field within a desired range where the magnetic field sensor has linear output and desired sensitivity.
摘要:
The present invention relates to a magnetic sensor and a magnetic detecting method of the same capable of detecting at least a magnetic field perpendicular to a substrate and a magnetic field parallel to the substrate in a state where the respective magnetic field components are mixed. One embodiment of the magnetic sensor detects a magnetic field of the orthogonal three axes, and includes a magnetic detector including a magnetic field sensitive material configured to detect a magnetic field component in a first direction, a magnetic field direction converters configured to convert a magnetic field component in a second direction and a magnetic field component in a third direction into magnetic field components in the first direction, the second direction being perpendicular to the first direction, the third direction being perpendicular to both of the first and the second directions.
摘要:
Apparatus and associated methods relate to an in-hole current-measurement system having three or more magnetic-field sensors and a transient-disturbance selection module configured to form an output signal from a selected subset of sensor signals while decoupling the output signals from a non-selected subset of sensor signals during a predetermined time window when a disturbance signal is expected at the non-selected set of sensor signals. In an illustrative example, a disturbance producing operation may be performed on alternating subsets of sensors while the undisturbed subset of sensors measures an electrical current in the electrical conductor. For example, each selected subset of sensors may be aligned on an axis configured to be mounted perpendicular to current flow within a hole in the electrical conductor. Some embodiments may advantageously provide continuous electrical current measurement while being uninterrupted by the predetermined transient disturbances.
摘要:
An apparatus includes circuits, a field line configured to generate a magnetic field based on an input, a sensing module configured to determine a parameter of each circuit, and a magnetic field direction determination module configured to determine an angular orientation of the apparatus relative to an external magnetic field based on the parameter. Each circuit includes multiple magnetic tunnel junctions. Each magnetic tunnel junction includes a storage layer having a storage magnetization direction and a sense layer having a sense magnetization direction configured based on the magnetic field. Each magnetic tunnel junction is configured such that the sense magnetization direction and a resistance of the magnetic tunnel junction vary based on the external magnetic field. The parameter varies based on the resistances of the multiple magnetic tunnel junctions. The magnetic field direction determination module is implemented in at least one of a memory or a processing device.
摘要:
A method for directly electrically generating and detecting spin polarization in topological insulators comprising depositing a first and fourth contact on a layer of Bi2Se3 and applying a current between the contacts, which creates a net spin polarization due to spin-momentum locking. A second (comprising ferromagnet/tunnel barrier) and third contact are deposited for detecting the spin polarization. A device for directly electrically generating and detecting the current-generated spin polarization in topological insulators, comprising a first and fourth contact on a layer of Bi2Se3 and a second contact comprising a ferromagnet/oxide tunnel barrier contact as a detector, and a third contact comprising nonmagnetic metal as a reference contact, a current to the first and fourth contact to produce a net spin polarization, and the spin polarization manifesting as a voltage between the second (magnetic) and third (reference) contacts.
摘要翻译:一种用于在拓扑绝缘体中直接电产生和检测自旋极化的方法,包括在Bi2Se3层上沉积第一和第四接触并在触点之间施加电流,由此产生由自旋动量锁定引起的净自旋极化。 沉积第二个(包括铁磁体/隧道势垒)和第三接触点以检测自旋极化。 一种用于直接电产生和检测拓扑绝缘体中的电流产生的自旋极化的装置,包括在Bi 2 Se 3层上的第一和第四接触以及包含铁磁体/氧化物隧道势垒接触作为检测器的第二接触,以及包括 作为参考接触的非磁性金属,到第一和第四接触的电流以产生净自旋极化,并且自旋极化表现为第二(磁)和第三(参考)触点之间的电压。
摘要:
A magnetoresistive sensor may include a stripe portion comprising magnetoresistive material. The stripe portion may have a stripe width extending along a first axis from a first stripe edge of the stripe portion to a second stripe edge of the stripe portion, a length along a second axis that is substantially perpendicular to the first axis, a first end, and a second end. The first end and the second end may be positioned at opposite ends of the stripe portion along the second axis. The magnetoresistive sensor may include an extension portion comprising magnetoresistive material. The extension portion may be positioned at the first end of the stripe portion, and may have an extension width along the first axis. The extension width may be larger than the stripe width, such that the extension portion extends beyond the first stripe edge and the second stripe edge.
摘要:
A magnetic field sensor for sensing an external magnetic field includes at least one magnetic field sensing element for measuring a magnetic field produced by a first magnetic field generating source and a current generator configured to receive one or more drive current signals at an input thereof and to generate a drive current signal having a periodic waveform and an amplitude offset at an output thereof. Also included is a second magnetic field generating source configured to receive the drive current signal at an input thereof and in response thereto, provide a magnetic field to the at least one magnetic field sensing element. Additionally included is a comparator configured to receive a reference voltage as a first input and an output signal from the at least one magnetic field sensing element as a second input, and in response thereto to generate a comparator output signal having a duty cycle. Further included is a compensation circuit configured to receive the comparator output signal having a duty cycle at an input thereof and to generate an offset signal for correcting the duty cycle to a predetermined duty cycle as an output. A corresponding method is also provided.
摘要:
Described herein is a biasing circuit for a magnetic-field sensor; the magnetic-field sensor is provided with a first detection structure, which generates a first electrical detection quantity as a function of a first component of an external magnetic field, and a second detection structure, which generates a second electrical detection quantity as a function of a second component of an external magnetic field. The biasing circuit electrically supplies the first detection structure and the second detection structure in respective biasing time intervals, at least partially distinct from one another, which preferably do not temporally overlap one other.
摘要:
A magnetic sensor device includes a first magnet and a second magnet that are disposed on mutually opposing sides of a conveyance path, and one of poles of the first magnet faces an opposite pole of the second magnet. The first magnet and the second magnet generate a cross magnetic field whose strength in a spacing direction, which is orthogonal to a conveying direction, is within a predetermined range. An AMR element is located in a magnetic field in which the strength of the cross magnetic field in the spacing direction is within a predetermined range, and detects, as change in a resistance value, change in the cross magnetic field caused by an object to be detected. A multilayer board outputs the change in the resistance value detected by the AMR element to a processing circuit.