公开(公告)号：US2707356A

公开(公告)日：1955-05-03

申请号：US35475953

申请日：1953-05-13

申请人： EMERSON RADIO AND PHONOGRAPH C

发明人： BAYHA JACK E

IPC分类号： G01R31/01 ,  H01C17/245 ,  H05K1/16

CPC分类号： H05K1/16 ,  G01R31/016 ,  H01C17/245 ,  H05K2203/171 ,  Y10S451/914 ,  Y10T29/49004

公开(公告)号：US1977697A

公开(公告)日：1934-10-23

申请号：US40194729

申请日：1929-10-23

申请人： WESTERN ELECTRIC CO

发明人： ROCKWOOD GEORGE H

IPC分类号： H01C17/245

CPC分类号： H01C17/245 ,  Y10S242/911

公开(公告)号：US10074465B2

公开(公告)日：2018-09-11

申请号：US15611826

申请日：2017-06-02

申请人： Murata Manufacturing Co., Ltd.

发明人： Yuichi Hirata ,  Noboru Furukawa ,  Yasuo Sasaki ,  Kiyohiro Koto ,  Kojiro Tokieda ,  Yukiko Ueda

IPC分类号： H01C7/10 ,  H01C7/04 ,  H01C17/245 ,  H01C1/142 ,  H01C17/28

CPC分类号： H01C7/041 ,  H01C1/142 ,  H01C1/148 ,  H01C7/18 ,  H01C17/245 ,  H01C17/281

摘要： A method of manufacturing an electronic component includes manufacturing a ceramic element including one pair of end surfaces and four side surfaces, forming external electrodes at both end portions of the ceramic element, measuring an initial characteristic value, determining any side surface to be machined among the four side surfaces and then determining, based on stored data, an amount of machining to be performed on the side surface to be machined, and machining, by the determined machining amount, the side surface of the ceramic element, which is determined to be machined, to be flush or substantially flush with the external electrodes.

公开(公告)号：US20170341170A1

公开(公告)日：2017-11-30

申请号：US15165578

申请日：2016-05-26

申请人： Texas Instruments Incorporated

发明人： Wan Mohd Misuari Suleiman

IPC分类号： B23D61/02 ,  H01C17/245 ,  B24B27/06

CPC分类号： B23D61/025 ,  B23D45/003 ,  B23D45/021 ,  B24B27/06 ,  H01C7/003 ,  H01C7/006 ,  H01C17/245

摘要： A saw blade for dicing a sheet of copper alloy to form individual resistors is disclosed, wherein the sheet of copper alloy has a thickness of less than 0.3 mm. The saw blade includes a ring having a first side, a second side, and a circumferential surface, wherein the thickness of the ring between the first side and the second side is less than 0.6 mm.

公开(公告)号：US20170104054A1

公开(公告)日：2017-04-13

申请号：US15386256

申请日：2016-12-21

申请人： International Business Machines Corporation

发明人： Jeffrey P. Gambino ,  Richard S. Graf ,  Sudeep Mandal

IPC分类号： H01L49/02 ,  H01L21/762 ,  H01L23/522 ,  H01L23/528 ,  H01L23/62 ,  H01C17/12 ,  H01L27/02 ,  H01L29/06 ,  H01C7/10 ,  H01C7/112 ,  H01C17/00 ,  H01C7/12 ,  H01L21/02 ,  H01L23/64

CPC分类号： H01C7/108 ,  H01C7/006 ,  H01C7/1013 ,  H01C7/112 ,  H01C7/12 ,  H01C17/006 ,  H01C17/06553 ,  H01C17/12 ,  H01C17/245 ,  H01C17/288 ,  H01L21/02175 ,  H01L21/022 ,  H01L21/02266 ,  H01L21/762 ,  H01L23/5226 ,  H01L23/528 ,  H01L23/62 ,  H01L23/647 ,  H01L27/0248 ,  H01L28/20 ,  H01L28/24 ,  H01L29/0649 ,  H01L2924/0002 ,  H01L2924/00

摘要： A structure and method for fabricating a laterally configured thin film varistor surge protection device using low temperature sputtering techniques which do not damage IC device components contiguous to the varistor being fabricated. The lateral thin film varistor may include of a continuous layer of alternating regions of a first metal oxide layer and a second metal oxide layer formed between two laterally spaced electrodes using a low temperature sputtering process followed by a low temperature annealing process.

公开(公告)号：US09536732B2

公开(公告)日：2017-01-03

申请号：US14885512

申请日：2015-10-16

申请人： International Business Machines Corporation

发明人： Jeffrey P. Gambino ,  Richard S. Graf ,  Sudeep Mandal

IPC分类号： H01L21/02 ,  H01L49/02

CPC分类号： H01C7/108 ,  H01C7/006 ,  H01C7/1013 ,  H01C7/112 ,  H01C7/12 ,  H01C17/006 ,  H01C17/06553 ,  H01C17/12 ,  H01C17/245 ,  H01C17/288 ,  H01L21/02175 ,  H01L21/022 ,  H01L21/02266 ,  H01L21/762 ,  H01L23/5226 ,  H01L23/528 ,  H01L23/62 ,  H01L23/647 ,  H01L27/0248 ,  H01L28/20 ,  H01L28/24 ,  H01L29/0649 ,  H01L2924/0002 ,  H01L2924/00

摘要： A structure and method for fabricating a laterally configured thin film varistor surge protection device using low temperature sputtering techniques which do not damage IC device components contiguous to the varistor being fabricated. The lateral thin film varistor may consist of a continuous layer of alternating regions of a first metal oxide layer and a second metal oxide layer formed between two laterally spaced electrodes using a low temperature sputtering process followed by a low temperature annealing process.

摘要翻译： 一种使用低温溅射技术制造横向配置的薄膜压敏电阻浪涌保护装置的结构和方法，其不会损坏与正在制造的压敏电阻相邻的IC器件部件。 横向薄膜压敏电阻可以由在第二金属氧化物层和第二金属氧化物层之间的交替区域的连续层组成，所述第二金属氧化物层和第二金属氧化物层之间形成在两个横向隔开的电极之间，使用低温溅射工艺，随后进行低温退

公开(公告)号：US20160254144A1

公开(公告)日：2016-09-01

申请号：US14885512

申请日：2015-10-16

申请人： International Business Machines Corporation

发明人： Jeffrey P. Gambino ,  Richard S. Graf ,  Sudeep Mandal

IPC分类号： H01L21/02 ,  H01L49/02

CPC分类号： H01C7/108 ,  H01C7/006 ,  H01C7/1013 ,  H01C7/112 ,  H01C7/12 ,  H01C17/006 ,  H01C17/06553 ,  H01C17/12 ,  H01C17/245 ,  H01C17/288 ,  H01L21/02175 ,  H01L21/022 ,  H01L21/02266 ,  H01L21/762 ,  H01L23/5226 ,  H01L23/528 ,  H01L23/62 ,  H01L23/647 ,  H01L27/0248 ,  H01L28/20 ,  H01L28/24 ,  H01L29/0649 ,  H01L2924/0002 ,  H01L2924/00

摘要： A structure and method for fabricating a laterally configured thin film varistor surge protection device using low temperature sputtering techniques which do not damage IC device components contiguous to the varistor being fabricated. The lateral thin film varistor may consist of a continuous layer of alternating regions of a first metal oxide layer and a second metal oxide layer formed between two laterally spaced electrodes using a low temperature sputtering process followed by a low temperature annealing process.

摘要翻译： 一种使用低温溅射技术制造横向配置的薄膜压敏电阻浪涌保护装置的结构和方法，其不会损坏与正在制造的压敏电阻相邻的IC器件部件。 横向薄膜压敏电阻可以由在第二金属氧化物层和第二金属氧化物层之间的交替区域的连续层组成，所述第二金属氧化物层和第二金属氧化物层之间形成在两个横向隔开的电极之间，使用低温溅射工艺，随后进行低温退火工艺

公开(公告)号：US08686292B2

公开(公告)日：2014-04-01

申请号：US13402124

申请日：2012-02-22

申请人： Douglas R. Bulmer ,  Jonathan Roberts ,  Davis Murphy

发明人： Douglas R. Bulmer ,  Jonathan Roberts ,  Davis Murphy

IPC分类号： H01B7/00

CPC分类号： H01C17/245 ,  H01C3/06 ,  H01C17/02 ,  H01C17/14 ,  H01C17/24 ,  H01C17/242 ,  Y10T29/49004 ,  Y10T29/49082 ,  Y10T29/49087

摘要： The method and system of high-resistance, multiple-conductor flat cables which contain integral tunable resistance sections suitable for fine tuning the resistance of a conductor to match the resistance of the conductors to one another within a specified target value. The method involves the design and creation of the high-resistance, multiple-conductor flat cables and the tuning of the resistance of the conductor.

摘要翻译： 高电阻，多导体扁平电缆的方法和系统，其包含集成的可调电阻部分，其适于微调导体的电阻以将导体的电阻彼此匹配在特定的目标值内。 该方法涉及高电阻，多导体扁平电缆的设计和制造以及导体电阻的调谐。

公开(公告)号：US5557252A

公开(公告)日：1996-09-17

申请号：US239968

申请日：1994-05-09

申请人： Shogo Ariyoshi

发明人： Shogo Ariyoshi

IPC分类号： H01C7/00 ,  H01C17/242 ,  H01C17/245 ,  H01L21/822 ,  H01L27/01 ,  H01L27/04 ,  H05K1/16 ,  H01C1/12

CPC分类号： H01C17/245 ,  H01C17/242

摘要： A thick film circuit board includes a substrate, a thick film resistor on the substrate and having a trimming region and a protecting element on the substrate for protecting the thick film resistor and having a window through which the trimming region is exposed. The protecting element may be a protective coating disposed on the substrate. Alternatively, the protective element may be a protective frame extending along an external periphery of a region where the thick film resistor is located on the substrate and having a height for protecting the thick film resistor from mechanical damage.

摘要翻译： 厚膜电路板包括基板，在基板上具有厚膜电阻器，并且在基板上具有修整区域和保护元件，用于保护厚膜电阻器并具有修整区域暴露的窗口。 保护元件可以是设置在基板上的保护涂层。 或者，保护元件可以是沿着厚膜电阻器位于基板上的区域的外周延伸并具有用于保护厚膜电阻器免受机械损坏的高度的保护框架。

公开(公告)号：US4796356A

公开(公告)日：1989-01-10

申请号：US90193

申请日：1987-08-27

申请人： Thomas Ozaki

发明人： Thomas Ozaki

IPC分类号： H01C17/02 ,  H01C17/245 ,  H01C17/28 ,  H05K1/09 ,  H05K1/16 ,  H01C17/06

CPC分类号： H01C17/281 ,  H01C17/02 ,  H01C17/245 ,  H05K1/092 ,  H05K1/16 ,  Y10T29/49087 ,  Y10T29/49099

摘要： A process for manufacturing close tolerance thick film resistors on a ceramic dielectric substrate is disclosed. The process includes the steps of printing resistor terminations to the dielectric substrate using a precious conductor material and fixing the resistor terminations by drying and firing in air. A resistive material is next printed to portions of the resistor terminations and to the dielectric substrate intermediate the resistor terminations. The resistive material is fixed by drying and firing in air. Terminal pads, conductor traces and resistor interconnections are printed on the dielectric substrate using a base conductor material. The resistor interconnections are also printed to the resistor terminations and to portions of the resistive material. The terminal pads, conductor traces and resistor interconnections are then air dried and fired in nitrogen. The resistor material is trimmed to tolerance by kerfing the resistor material and a dielectric encapsulant is printed substantially over the resistor interconnections and resistive material. The encapsulant is cured using an infrared light source, or conventional oven.

摘要翻译： 公开了一种在陶瓷电介质基片上制造紧密厚膜电阻器的方法。 该方法包括以下步骤：使用贵重导体材料将电阻端子印刷到电介质基片上，并通过在空气中干燥和烧制来固定电阻器端子。 接下来，将电阻材料印刷到电阻器端子的部分和电阻器端子之间的电介质基板。 电阻材料通过在空气中干燥和烧制而固定。 端子焊盘，导体迹线和电阻互连使用基底导体材料印刷在电介质基片上。 电阻器互连也被印刷到电阻器端子和电阻材料的部分。 然后将端子焊盘，导体迹线和电阻器互连件空气干燥并在氮气中烧制。 电阻材料通过对电阻材料进行切割而修整为公差，并且电介质密封剂基本上印刷在电阻器互连和电阻材料上。 密封剂使用红外光源或常规烤箱固化。