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公开(公告)号：US4504928A
公开(公告)日：1985-03-12
申请号：US413050
申请日：1982-08-30
Applicant: Robert B. Davies , Ira Miller , Robert N. Dotson
Inventor： Robert B. Davies , Ira Miller , Robert N. Dotson
CPC classification number: G11C19/0858
Abstract: A current ramp generator is provided for controlling the fall time of a bubble generate waveform of a bubble memory system. Gate circuitry is responsive to a digital input signal and provides an initializing signal to a current source. The current source charges a capacitor and thereby provides an increasing signal to a current mirror whose output sinks current from a control amplifier of the bubble memory system.
Abstract translation: 提供电流斜坡发生器用于控制气泡存储系统的气泡产生波形的下降时间。 门电路响应于数字输入信号并向电流源提供初始化信号。 电流源对电容器充电，从而向电流镜提供增加的信号，电流镜的输出从气泡存储器系统的控制放大器吸收电流。
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公开(公告)号：US4471451A
公开(公告)日：1984-09-11
申请号：US351068
申请日：1982-02-22
Applicant: Stephen R. Schenck
Inventor： Stephen R. Schenck
Abstract: A digital data sense amplifier is disclosed for detecting small signal outputs from a storage media or from input sensors and comprises a differential amplifier whose outputs are coupled via two capacitors to an offset circuit which generates two offsets which in turn are fed to two comparators, one for a positive signal threshold and one for a negative signal threshold. This results in peak to peak data sensing in a noisy signal environment. An alternative embodiment differentiates an inputted analog signal and outputs a digital representation of the first derivative, or rate of change of said analog signal.
Abstract translation: 公开了一种用于检测来自存储介质或输入传感器的小信号输出的数字数字读出放大器，并且包括差分放大器，其输出经由两个电容器耦合到偏移电路，偏移电路产生两个偏移，偏移电路又被馈送给两个比较器，一个 对于正信号阈值，一个用于负信号阈值。 这导致在噪声信号环境中的峰值到峰值数据感测。 一个替代实施例区分输入的模拟信号并输出一阶导数的数字表示或所述模拟信号的变化率。
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公开(公告)号：US4468438A
公开(公告)日：1984-08-28
申请号：US328384
申请日：1981-12-07
Applicant: Stuart L. Blank , Virendra V. S. Rana
Inventor： Stuart L. Blank , Virendra V. S. Rana
CPC classification number: H01F41/28 , Y10S428/90
Abstract: The use of vanadium on the tetrahedral site of a garnet material together with a suitable charge compensating ion, such as Ca.sup.2+, results in advantageous materials. In particular, very high Curie temperatures, e.g., up to 524 degrees C., in films capable of supporting 1 .mu.m-sized bubble domains, are observed. Additionally, the change of collapse field with temperatures for magnetic bubble domains in the garnet material is linear and closely parallels over a wide temperature range the change of bubble controlling static field of permanent magnets typically employed in magnetic bubble devices. A substantially constant bubble size is maintainable over a wide temperature range. The desired garnet compositions are produced advantageously from a melt containing a suitable ratio of vanadium to calcium.
Abstract translation: 在石榴石材料的四面体位置上使用钒以及合适的电荷补偿离子（如Ca2 +）可以产生有利的材料。 特别地，观察到在能够支撑1微米大小的气泡区域的膜中非常高的居里温度，例如高达524℃。 此外，石榴石材料中磁性气泡区域的塌陷场的变化是线性的，并且在通常用于磁性气泡装置的永磁体的气泡控制静电场的变化的宽温度范围内是紧密平行的。 基本恒定的气泡尺寸可在宽的温度范围内保持。 期望的石榴石组合物有利地由含有合适比例的钒与钙的熔体制备。
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公开(公告)号：US4462087A
公开(公告)日：1984-07-24
申请号：US468707
申请日：1983-02-22
Applicant: Yoshio Satoh , Makoto Ohashi , Tsutomu Miyashita , Kazuo Matsuda , Kazunari Komenou
Inventor： Yoshio Satoh , Makoto Ohashi , Tsutomu Miyashita , Kazuo Matsuda , Kazunari Komenou
CPC classification number: H01F41/28 , B41J2/25 , G11C19/0816 , H01F10/24
Abstract: Ion-implanted bubble device comprises a magnetic layer in which bubble propagation paths are formed by ion-implantation. The bubble propagation path has an inside turn including a cusp of which the summit deviates toward a direction of bubble propagation with respect to a cusp center line. Such a bubble propagation path permits the ion-implanted bubble device adopting a folded minor loop organization to be realized.
Abstract translation: 离子注入气泡装置包括通过离子注入形成气泡传播路径的磁性层。 气泡传播路径具有内转，其包括峰顶相对于尖点中心线朝向气泡传播方向偏离的尖点。 这种气泡传播路径允许实现采用折叠的小环组织的离子注入气泡装置。
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公开(公告)号：US4434476A
公开(公告)日：1984-02-28
申请号：US408849
申请日：1982-08-17
Applicant: Kazuo Matsuda , Makoto Ohashi , Yoshio Satoh , Tsutomu Miyashita , Kazunari Komenou
Inventor： Kazuo Matsuda , Makoto Ohashi , Yoshio Satoh , Tsutomu Miyashita , Kazunari Komenou
IPC: G11C19/08
CPC classification number: G11C19/0858 , G11C19/0883
Abstract: A magnetic bubble memory device includes: a magnetic layer with a first region having an easy axis of magnetization extending in a certain direction and a second region surrounding the first region and having an easy axis of magnetization substantially perpendicular to that of the first region, said first region defining a plurality of bubble propagation patterns; and a replicate gate with a stretch conductor pattern, to which an electric current is applied so as to stretch a bubble between said propagation patterns, and a cutting pattern formed in the second region between the propagation patterns and adapted to lower the bubble collapse field so as to cut the stretched domain. The replicate gate is operated by applying an operating current pulse to the stretch conductor pattern, said operating pulse including a stretch pulse for stretching the bubble and a cut pulse, following the stretch pulse, for cutting the stretched domain.
Abstract translation: 磁性气泡存储装置包括：具有第一区域的磁性层，该第一区域具有在一定方向上延伸的易磁化轴和围绕第一区域的第二区域，并且具有与第一区域基本上垂直的易磁化磁化轴， 第一区域限定多个气泡传播模式; 以及具有拉伸导体图案的复制栅极，施加电流以在所述传播图案之间拉伸气泡，以及形成在传播图案之间的第二区域中的切割图案，并适于降低气泡塌陷场，从而 为了切割伸展的域。 通过对拉伸导体图案施加工作电流脉冲来操作复制栅极，所述操作脉冲包括用于拉伸气泡的拉伸脉冲和拉伸脉冲之后的切割脉冲，用于切割拉伸区域。
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公开(公告)号：US4430729A
公开(公告)日：1984-02-07
申请号：US416043
申请日：1982-09-08
Applicant: Takashi Toyooka , Hirokazu Aoki , Mamoru Sugie , Shigeru Yoshizawa
Inventor： Takashi Toyooka , Hirokazu Aoki , Mamoru Sugie , Shigeru Yoshizawa
CPC classification number: G11C19/085
Abstract: A series resonant drive circuit for a magnetic bubble memory includes X- and Y-coils arranged orthogonally to each other for generating a rotating magnetic field applied to a magnetic bubble memory chip, resonance capacitors each connected to a corresponding one of the X- and Y-coils for forming a series resonance circuit with the corresponding coil at a frequency of the rotating magnetic field, power supplies each connected to a corresponding one of the resonance circuits, and an inductance device connected in series with both of the resonance circuits and a capacitance device connected between the resonance circuits to compensate a mutual inductance due to the inductive coupling between the X- and Y-coils and a capacitance due to the capacitive coupling between the X- and Y-coils. Further, the temperature coefficient of the capacitance device is selected so that the temperature coefficients of the mutual inductance and capacitance between the coils can be compensated.
Abstract translation: 一种用于磁性气泡存储器的串联谐振驱动电路，包括彼此垂直排列的X线圈和Y型线圈，用于产生施加到磁性气泡存储器芯片的旋转磁场，谐振电容器各自连接到X和Y中相应的一个 - 用于在旋转磁场的频率下与对应的线圈形成串联谐振电路的线圈，各自连接到相应的一个谐振电路的电源，以及与两个谐振电路串联连接的电感器件和电容 连接在谐振电路之间的器件，以补偿由于X线圈和Y线圈之间的电感耦合引起的互感以及由于X线圈和Y线圈之间的电容耦合引起的电容。 此外，选择电容器件的温度系数，使得可以补偿线圈之间的互感和电容的温度系数。
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公开(公告)号：US4424577A
公开(公告)日：1984-01-03
申请号：US170462
申请日：1980-07-21
Applicant: Isoris S. Gergis , Bruce E. MacNeal
Inventor： Isoris S. Gergis , Bruce E. MacNeal
CPC classification number: G11C19/0883
Abstract: A magnetic bubble domain system including a planar layer of magnetic material in which magnetic bubble domains can be propagated; and first and second bubble domain guide structure coupled to the layer and defining respective first and second bubble propagation paths for guiding the movement of bubbles in the layer in response to a cyclical change in the orientation of a reorienting magnetic field within the plane of the layer. A transfer bubble domain guide structure coupled to the layer is also provided for transferring bubble domains between the first and the second propagation paths responsive to a reverse in direction of the reorienting magnetic field. The transfer path is substantially the same as one of the directions of the crystallographic axes of the planar layer.
Abstract translation: 包括磁性材料的平面层的磁性气泡区域系统，其中可以传播磁性气泡区域; 以及第一和第二气泡区域引导结构，其耦合到所述层并且限定相应的第一和第二气泡传播路径，用于响应于所述层的平面内的重新定向磁场的取向的循环变化来引导层中气泡的移动 。 还提供耦合到该层的转移气泡区域引导结构，用于响应于重新定向磁场的方向反向，在第一和第二传播路径之间传送气泡域。 传送路径与平面层的结晶轴的方向之一基本相同。
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88.发明授权Replicator for ion-implanted bubble domain devices using stretching action of charged wall 失效用于离子注入气泡区域装置的复制器，使用带电壁的拉伸作用
公开(公告)号：US4423489A
公开(公告)日：1983-12-27
申请号：US263659
申请日：1981-05-14
Applicant: Bruce E. MacNeal
Inventor： Bruce E. MacNeal
CPC classification number: G11C19/0866 , G11C19/0858
Abstract: A replicator for an ion-implanted magnetic bubble domain device including a single level conductor bubble cutting element disposed between first and second spaced apart bubble domain guide structures. The charged wall movement in response to the rotating in-plane field functions to stretch a bubble domain travelling along the first bubble propagation path onto the second bubble propagation path and the conductor element crossing the stretched domain functions in response to an activating signal on the conductor to cut the bubble.
Abstract translation: 用于离子注入的气泡区域装置的复制器，包括设置在第一和第二间隔开的气泡区域引导结构之间的单层导体气泡切割元件。 响应于旋转的面内场的带电壁运动用于将沿着第一气泡传播路径行进的气泡区域拉伸到第二气泡传播路径上，并且穿过延伸区域的导体元件响应于导体上的激活信号起作用 去泡泡。
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公开(公告)号：US4418400A
公开(公告)日：1983-11-29
申请号：US218993
申请日：1980-12-22
Applicant: Gregory J. Cosimini , David S. Lo , Maynard C. Paul
Inventor： Gregory J. Cosimini , David S. Lo , Maynard C. Paul
IPC: G11C19/08
CPC classification number: G11C19/0841
Abstract: An improved magnetic memory system in which binary data are stored as cross-tie, Bloch-line pairs, which are serially propagated downstream along a cross-tie wall in a magnetizable layer by appropriate drive fields. The magnetizable layer is configured into a data track whose two opposing edges are formed into patterns of asymmetrically shaped edges which form successive narrow portions with wide portions therebetween, and which are formed about the geometric centerline of the data track. The improvement comprises forming a plurality of energy wells along the geometric centerline of the data track and, transverse to the geometric centerline of the data track in the areas of the narrow portions where the cross-ties are stored but not in the areas of the geometric centerline.
Abstract translation: 一种改进的磁存储系统，其中二进制数据被存储为交叉连接布洛赫线对，其通过适当的驱动场沿着可磁化层中的交叉连接壁在下游串行地传播。 可磁化层被配置成数据轨道，其两个相对边缘形成为不对称形状的边缘的图案，其形成连续的窄部分，其间具有宽的部分，并且围绕数据轨道的几何中心线形成。 改进包括沿着数据轨道的几何中心线形成多个能量阱，并且横向于数据轨道的几何中心线，在狭窄部分的交叉点被存储的区域中，但不在几何区域 中心线。
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公开(公告)号：US4417323A
公开(公告)日：1983-11-22
申请号：US234630
申请日：1981-02-17
Applicant: Atsushi Asano , Masatoshi Takeshita , Hideki Nishida , Ryo Suzuki , Toshio Futami
Inventor： Atsushi Asano , Masatoshi Takeshita , Hideki Nishida , Ryo Suzuki , Toshio Futami
CPC classification number: H05K1/0209 , G11C19/085 , H01F10/06 , H01L2924/0002 , H05K2201/0769 , H05K2201/09781
Abstract: A micro-pattern element has a heat discharge pattern formed on a fine line portion of a conductor pattern. Breakage caused by temperature elevation of the conductor pattern in response to the application of an electric current and resulting electromigration can be effectively prevented by the heat-discharge pattern formed on the fine line portion of the conductor pattern; thus, the reliability of the micro-pattern element can be remarkably improved.
Abstract translation: 微图案元件具有形成在导体图案的细线部分上的放热图案。 可以通过形成在导体图案的细线部分上的放热图案，有效地防止导体图案由于施加电流而导致的温度升高导致的破坏，导致电迁移; 因此，可以显着提高微图案元件的可靠性。
