公开(公告)号：US20140238133A1

公开(公告)日：2014-08-28

申请号：US14350807

申请日：2012-11-12

Applicant: FUJI ELECTRIC CO., LTD.

Inventor： Masami Kishiro

IPC: G01P15/125

CPC classification number: G01P15/125 ,  G01L9/12 ,  G01P15/18 ,  G01P2015/084 ,  G01R27/2605

Abstract: A capacitance detection circuit inhibits noise. The capacitance detection circuit detects a change in capacitance between a pair of electrodes of a physical quantity sensor, with these electrodes generating the change in capacitance in response to a change in physical quantity. The capacitance detection circuit has a carrier signal generating circuit that supplies a carrier signal to one of the electrodes, an operational amplifier that has an inverting input terminal to which the other one of the electrodes is input, a dummy capacity that is connected in parallel to the pair of electrodes, and a carrier signal conditioning circuit that inverts a phase of a carrier signal supplied from the carrier signal generating circuit to the dummy capacity and adjusts a gain to inhibit the dummy capacity.

Abstract translation: 电容检测电路抑制噪声。 电容检测电路检测物理量传感器的一对电极之间的电容变化，这些电极响应于物理量的变化而产生电容的变化。 电容检测电路具有载波信号发生电路，其向一个电极提供载波信号，具有输入另一个电极的反相输入端的运算放大器，并联连接的虚拟容量 一对电极和载波信号调理电路，其将从载波信号发生电路提供的载波信号的相位反转到虚拟容量，并调整增益以抑制虚拟容量。

公开(公告)号：US20170243962A1

公开(公告)日：2017-08-24

申请号：US15390680

申请日：2016-12-26

Applicant: FUJI ELECTRIC CO., LTD.

Inventor： Hong-fei LU

IPC: H01L29/739 ,  H01L29/66 ,  H01L29/08 ,  H01L29/417 ,  H01L29/06 ,  H01L29/10

CPC classification number: H01L29/7395 ,  H01L29/0619 ,  H01L29/0649 ,  H01L29/0696 ,  H01L29/0804 ,  H01L29/0821 ,  H01L29/1095 ,  H01L29/404 ,  H01L29/407 ,  H01L29/417 ,  H01L29/41708 ,  H01L29/66333 ,  H01L29/66348 ,  H01L29/7397

Abstract: An RB-IGBT is provided that has a new emitter trench structure with improved breakdown voltage achieved by improving the electrical field distribution of the drift region. The RB-IGBT includes an isolation region having a first conductivity type on a side surface of a semiconductor substrate. The semiconductor substrate includes a drift region having a second conductivity type; a collector region having the first conductivity type and provided farther downward than the drift region; and an emitter trench portion provided extending to the drift region in a thickness direction from a front surface to a back surface of the semiconductor substrate. The emitter trench portion includes a trench electrode electrically connected to an emitter electrode provided above the semiconductor substrate; an upper trench insulating film directly contacting a bottom portion and side portions of the trench electrode; and a lower trench insulating film provided below the upper trench insulating film.

公开(公告)号：US20250070074A1

公开(公告)日：2025-02-27

申请号：US18756361

申请日：2024-06-27

Applicant: FUJI ELECTRIC CO., LTD.

Inventor： Hiroaki HOKAZONO

IPC: H01L23/00 ,  H01L23/057 ,  H01L23/31 ,  H01L23/36 ,  H01L23/538 ,  H01L25/065

Abstract: A semiconductor device, including an electrically conductive portion, and a terminal. The terminal includes a bonding portion that is of a flat plate shape and has: a rear surface bonded to the electrically conductive portion, and a front surface having an indentation formed thereon. The front surface has two opposite sides that are respectively a bonding front-end side and a bonding rear-end side. The indentation has two opposite sides that are respectively an indentation front-end side and an indentation rear-end side. The indentation front-end side is flush with the bonding front-end side. A length of the indentation rear-end side is shorter than a length of the bonding rear-end side.

公开(公告)号：US20250070057A1

公开(公告)日：2025-02-27

申请号：US18756112

申请日：2024-06-27

Applicant: FUJI ELECTRIC CO., LTD.

Inventor： Hiroaki ICHIKAWA

IPC: H01L23/62 ,  H01L23/00 ,  H01L23/057 ,  H01L23/31 ,  H01L23/36 ,  H01L23/538 ,  H02M7/539 ,  H03K17/08

Abstract: A semiconductor device, having: a circuit board, including a wiring board and a semiconductor element disposed on a first surface of the wiring board; a case having a hollow portion housing the circuit board; and a first conductive terminal and a second conductive terminal attached to the case, each of the first conductive terminal and the second conductive terminal having an inner connection portion exposed to the hollow portion of the case. The inner connection portions have a first gap therebetween in the hollow portion of the case. The first conductive terminal and the second conductive terminal each have a discharge portion facing each other across a second gap narrower than the first gap. The discharge portion of the first conductive terminal and the discharge portion of the second conductive terminal protrude to a position away from other members.

公开(公告)号：US12237237B2

公开(公告)日：2025-02-25

申请号：US17752073

申请日：2022-05-24

Applicant: FUJI ELECTRIC CO., LTD.

Inventor： Tadahiko Sato ,  Norihiro Nashida

IPC: H01L23/047 ,  H01L21/48 ,  H01L23/00 ,  H01L23/053

Abstract: A semiconductor module includes first and second semiconductor chips including first and second main electrodes, respectively; first and second connection terminals electrically connected to the first and second main electrodes, respectively; and an insulating sheet. The first connection terminal includes a first conductor portion including a first peripheral edge and a first terminal portion extending from the first peripheral edge in plan view, and the second connection terminal includes a second conductor portion including a second peripheral edge. A part of the first conductor portion overlap a part of the second conductor portion in plan view. The insulating sheet includes an insulating portion layered between the first and second conductor portions, and a first protruding portion positioned between a tip portion of the first terminal portion and the second peripheral edge in plan view, the first protruding portion forming an angle relative to a surface of the first terminal portion.

公开(公告)号：US20250062271A1

公开(公告)日：2025-02-20

申请号：US18933990

申请日：2024-10-31

Applicant: FUJI ELECTRIC CO., LTD.

Inventor： Yoko NAKAMURA ,  Akihiko IWAYA ,  Mai SAITO ,  Tsubasa WATAKABE

IPC: H01L23/00 ,  H01L23/373 ,  H01L25/07

Abstract: A semiconductor module, including: a stacked substrate including a plurality of circuit boards formed on an upper surface of an insulating plate; a semiconductor element formed on an upper surface of one of the plurality of circuit boards; and a metal wiring board formed on an upper surface of the semiconductor element. The metal wiring board has a bonding portion bonded to the upper surface of the semiconductor element via a bonding material. The bonding portion includes a plate-shaped portion having an upper surface and a lower surface. The plate-shaped portion has a roughened region in which a plurality of recessed portions are formed on the upper surface of the plate-shaped portion. The plurality of recessed portions include a plurality of first recessed portions that each has a peeling suppressing portion protruding inward to thereby narrow a width of each first recessed portion.

公开(公告)号：US12230627B2

公开(公告)日：2025-02-18

申请号：US17381426

申请日：2021-07-21

Applicant: FUJI ELECTRIC CO., LTD.

Inventor： Isao Saito

IPC: H01L27/02 ,  H01L23/528 ,  H01L27/06 ,  H01L29/78

Abstract: A semiconductor device including a first line configured to receive a power supply voltage, a second line configured to be coupled to a load of the semiconductor device, first and second metal-oxide-semiconductor (MOS) transistors coupled in series between the first line and the second line, each of the first and second MOS transistors having a drain electrode and a gate electrode, the drain electrode of the first MOS transistor being coupled to the drain electrode of the second MOS transistor, a third line coupled to the gate electrode of the first MOS transistor, and a fourth line coupled to the gate electrode of the second MOS transistor, the third and fourth lines being electrically separated from each other.

公开(公告)号：US20250054897A1

公开(公告)日：2025-02-13

申请号：US18933720

申请日：2024-10-31

Applicant: FUJI ELECTRIC CO., LTD.

Inventor： Mai SAITO ,  Yoko NAKAMURA ,  Tsubasa WATAKABE ,  Akihiko IWAYA

IPC: H01L23/00 ,  H01L23/04 ,  H01L23/31 ,  H01L23/495 ,  H05K1/02

Abstract: A semiconductor module includes a stacked substrate in which a plurality of circuit boards are arranged on an upper surface of an insulating plate, a semiconductor element arranged on an upper surface of at least one of the circuit boards, and a metal wiring board arranged on an upper surface of the semiconductor element. The metal wiring board has a first bonding portion bonded to the upper surface of the semiconductor element via a bonding material. The first bonding portion includes a plate-shaped portion having an upper surface and a lower surface, and at least one groove is provided along an outer periphery of the first bonding portion on the upper surface of the plate-shaped portion.

公开(公告)号：US20250054718A1

公开(公告)日：2025-02-13

申请号：US18752333

申请日：2024-06-24

Applicant: FUJI ELECTRIC CO., LTD.

Inventor： Koujun KONISHI ,  Takashi TSUTSUMI ,  Yuya SAKURAI ,  Yuma KUSANO

IPC: H01H50/54 ,  H01H49/00 ,  H01H50/02 ,  H01H50/16

Abstract: An electromagnetic contactor comprises: fixed contact pieces 3 including fixed contacts 9; an electromagnet unit 5 to which a movable contact piece 4, the movable contact piece 4 including movable contacts 10, the movable contacts 10 coming into contact with and being separated from the fixed contacts, is joined via a contact support 11; and a hermetically sealed container 2 configured to contain the fixed contact pieces, the movable contact piece, and the electromagnet unit in the same space, wherein in the electromagnet unit 5, unit-side joining portions 25a and 25b, the unit-side joining portions 25a and 25b being joined to container-side joining portions 33 and 36 arranged on the hermetically sealed container from the direction of movement of the movable contact piece, respectively, are arranged, and flat plate-shaped spacers 34 and 37 by which an inter-contact gap G between the fixed contacts and the movable contacts is adjusted are arranged interposed between the container-side joining portion and the unit-side joining portion.

公开(公告)号：US20250048684A1

公开(公告)日：2025-02-06

申请号：US18924878

申请日：2024-10-23

Applicant: FUJI ELECTRIC CO., LTD.

Inventor： Shuntaro YAGUCHI ,  Takashi YOSHIMURA ,  Hiroshi TAKISHITA ,  Yuusuke OOSHIMA ,  Hidenori TSUJI

IPC: H01L29/06 ,  H01L29/66 ,  H01L29/739

Abstract: Provided is a semiconductor device comprising a semiconductor substrate having an upper surface and a lower surface, with a bulk donor distributed between the upper surface and the lower surface, that has a drift region of a first conductivity type provided thereon, the semiconductor device comprising a high-concentration region of a first conductivity type that is arranged between the drift region and the lower surface of the semiconductor substrate, includes a hydrogen donor, and has a carrier concentration that is higher than a bulk donor concentration, wherein the high-concentration region has a first portion in which a hydrogen donor concentration obtained by subtracting a bulk donor concentration from a carrier concentration is 7×1013/cm3 or more and 1.5×1014/cm3 or less, and a length of the first portion in a depth direction of the semiconductor substrate is 50% or more of a length of the high-concentration region.