摘要:
Dual-base two-sided bipolar power transistors which use an insulated field plate to separate the emitter/collector diffusions from the nearest base contact diffusion. This provides a surprising improvement in turn-off performance, and in breakdown voltage.
摘要:
Methods and systems for HVDC and/or MVDC power transmission and/or distribution, using circuit breakers where a series-connected stack of fully-bidirectional bipolar junction transistors is the initial interrupter in the current path. Preferably these transistors are operated with two pre-turnoff phases, to deplete minority carrier population and thus provide a faster transition to complete turnoff.
摘要:
The present application teaches, among other innovations, power semiconductor devices in which breakdown initiation regions, on BOTH sides of a die, are located inside the emitter/collector regions, but laterally spaced away from insulated trenches which surround the emitter/collector regions. Preferably this is part of a symmetrically-bidirectional power device of the “B-TRAN” type. In one advantageous group of embodiments (but not all), the breakdown initiation regions are defined by dopant introduction through the bottom of trench portions which lie within the emitter/collector region. In one group of embodiments (but not all), these can advantageously be separated trench portions which are not continuous with the trench(es) surrounding the emitter/collector region(s).
摘要:
A symmetrically-bidirectional bipolar transistor circuit where the two base contact regions are clamped, through a low-voltage diode and a resistive element, to avoid bringing either emitter junction to forward bias. This avoids bipolar gain in the off state, and thereby avoids reduction of the withstand voltage due to bipolar gain.
摘要:
A two-surface bidirectional power bipolar transistor is constructed with a two-surface cellular layout. Each emitter/collector region (e.g. doped n-type) is a local center of the repeated pattern, and is surrounded by a trench with an insulated field plate, which is tied to the potential of the emitter/collector region. The outer (other) side of this field plate trench is preferably surrounded by a base connection region (e.g. p-type), which provides an ohmic connection to the substrate. The substrate itself serves as the transistor's base.
摘要:
Methods and systems for bi-directional multi-port power conversion systems and applications are disclosed. In some sample embodiments, current-modulating power converters can be used to provide conversion between synchronous and asynchronous power. In some sample embodiments, current-modulating power converters can perform power conversion can be performed to and from three-phase AC with an active neutral line. In some sample embodiments, current-modulating power converters can convert between synchronous and asynchronous power and also support three-phase AC with active neutral.
摘要:
The present application teaches configurations in which the multiple-ON-mode bidirectional bipolar switch is used to provide very simple circuit configurations which can—when requirements are not stringent—perform certain electrical conversions which might otherwise require a PPSA (Power Packet Switching Architecture) converter.
摘要:
Bidirectional symmetrically-bidirectional power bipolar devices are laid out so that each emitter/collector region, on either side of the die, is laterally surrounded entirely by trenches which preferably contain insulated field plates, and which prevent lateral propagation of carriers. Most preferably the emitter/collector regions are laid out as stripes, so no part of the emitter/collector region is unexpectedly far from a good low-resistance connection to the base contact.
摘要:
Methods and systems for transforming electric power between two or more portals using multiple power modules. Any or all portals can be DC, single phase AC, or multi-phase AC. Individual power modules comprise a plurality of bi-directional conducting and blocking semiconductor switches, and an inductor and parallel capacitor (reactance). The switches alternately connect the reactance between said portals, such that energy is transferred into the inductor from one or more input portals and/or phases, then transferred out of the inductor to one or more output portals and/or phases, with said parallel capacitor facilitating “soft” turn-off, and with any excess inductor energy being returned to the input. Dual power modules can operate 90 degrees out of phase. This configuration allows use of the same I/O filter capacitors as with a single power module, while achieving twice the total power produced by the power converter, reducing ripple voltage and doubling ripple frequency.
摘要:
Methods, systems, circuits, and devices for power-packet-switching power converters using bidirectional bipolar transistors (BTRANs) for switching. Four-terminal three-layer BTRANs provide substantially identical operation in either direction with forward voltages of less than a diode drop. BTRANs are fully symmetric merged double-base bidirectional bipolar opposite-faced devices which operate under conditions of high non-equilibrium carrier concentration, and which can have surprising synergies when used as bidirectional switches for power-packet-switching power converters. BTRANs are driven into a state of high carrier concentration, making the on-state voltage drop very low.