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    WAFER HOLDER AND SEMICONDUCTOR MANUFACTURING APPARATUS
    1.
    发明申请
    WAFER HOLDER AND SEMICONDUCTOR MANUFACTURING APPARATUS 审中-公开
    过滤器和半导体制造设备

    公开(公告)号：US20170067162A1

    公开(公告)日：2017-03-09

    申请号：US15017880

    申请日：2016-02-08

    申请人： Kabushiki Kaisha Toshiba

    发明人： Takuya Matsuda ,  Kazunari Yabe ,  Takahiro Terada ,  Noriyuki Moriya ,  Hidenori Hanyu

    IPC分类号： C23C16/46 ,  C23C16/458 ,  C23C16/455 ,  H01L21/687 ,  H01L21/67

    CPC分类号： C23C16/46 ,  C23C16/4584 ,  H01L21/67109 ,  H01L21/67248 ,  H01L21/68735 ,  H01L21/68764 ,  H01L21/68771

    摘要： A wafer holder according to an embodiment includes a wafer holder. A wafer support-portion is provided at an end portion of a mount region for a wafer. A first portion is located nearer a central portion of the mount region than the wafer support-portion. A first depth of the first portion with reference to an upper surface of the wafer holder outside the mount region is larger than a second depth of the wafer support-portion and a third depth of a third portion located nearer the central portion of the mount region than the first portion. A second portion is located nearer the central portion of the mount region than the wafer support-portion. A fourth depth of the second portion with reference to the upper surface of the wafer holder outside the mount region is larger than the second and third depths and smaller than the first depth.

    摘要翻译： 根据实施例的晶片保持器包括晶片保持器。 在晶片的安装区域的端部设置有晶片支撑部。 第一部分位于比晶片支撑部分更靠近安装区域的中心部分。 相对于安装区域外的晶片保持器的上表面，第一部分的第一深度大于晶片支撑部分的第二深度，并且位于更靠近安装区域的中心部分的第三部分的第三深度 比第一部分。 第二部分位于比晶片支撑部分更靠近安装区域的中心部分。 相对于安装区域外的晶片保持器的上表面的第二部分的第四深度大于第二和第三深度并且小于第一深度。

    X-RAY CT APPARATUS
    3.
    发明申请
    X-RAY CT APPARATUS 有权
    X射线CT装置

    公开(公告)号：US20140079178A1

    公开(公告)日：2014-03-20

    申请号：US14110860

    申请日：2013-01-21

    申请人： Kabushiki Kaisha Toshiba ,  Toshiba Medical Systems Corporation ,  Kabushiki Kaisha Toshiba ,  Toshiba Medical Systems Corpraration

    发明人： Go Mukumoto

    IPC分类号： A61B6/00 ,  A61B6/03

    CPC分类号： A61B6/52 ,  A61B6/032 ,  A61B6/463 ,  A61B6/465 ,  A61B6/5235 ,  G06T11/008

    摘要： An X-ray CT apparatus, which is capable of quickly acquiring information for determining whether further CT imaging is required, is provided. The X-ray CT apparatus according to the embodiment comprises a reconstruction processor, a setting unit, and a controller. The reconstruction processor carries out first reconstruction processing to be carried out at a first image thickness based on detection data to be sequentially acquired by X-ray scanning of the desired site of a subject, and second reconstruction processing to be carried out at a second image thickness based on all detection data acquired by the X-ray scanning. The setting unit sets the first image thickness based on the second image thickness set in advance. The controller allows the reconstruction processor to initiate the first reconstruction processing in parallel with the X-ray scanning at the set first image thickness and initiate the second reconstruction processing at the second image thickness once the first reconstruction processing is completed.

    摘要翻译： 提供了能够快速获取用于确定是否需要进一步CT成像的信息的X射线CT装置。 根据实施例的X射线CT装置包括重构处理器，设置单元和控制器。 重构处理器基于要通过对被摄体的期望位置的X射线扫描顺序获取的检测数据，以第一图像厚度进行第一重建处理，以及在第二图像处执行的第二重建处理 基于通过X射线扫描获取的所有检测数据的厚度。 设定单元基于预先设定的第二图像厚度设定第一图像厚度。 控制器允许重建处理器在设置的第一图像厚度处与X射线扫描并行地开始第一重建处理，并且一旦完成第一重建处理就开始第二重建处理。

    SEMICONDUCTOR DEVICE
    4.
    发明申请
    SEMICONDUCTOR DEVICE 有权
    半导体器件

    公开(公告)号：US20170077220A1

    公开(公告)日：2017-03-16

    申请号：US15062207

    申请日：2016-03-07

    申请人： KABUSHIKI KAISHA TOSHIBA

    发明人： Ryoichi OHARA ,  Takao NODA ,  Yoichi HORI

    IPC分类号： H01L29/06 ,  H01L29/872 ,  H01L29/78 ,  H01L29/16

    CPC分类号： H01L29/0634 ,  H01L29/0615 ,  H01L29/0692 ,  H01L29/1608 ,  H01L29/32 ,  H01L29/7811 ,  H01L29/872

    摘要： A semiconductor device includes a SiC layer that has a first surface and a second surface, a first electrode in contact with the first surface, a first SiC region of a first conductivity type in the SiC layer, a second SiC region of a second conductivity type in the SiC layer and surrounding a portion of the first SiC region, a third SiC region of the second conductivity type in the SiC layer and surrounding the second SiC region, the third SiC region having an impurity concentration of the second conductivity type lower than that of the second SiC region, and a fourth SiC region of the second conductivity type in the SiC layer between the second SiC region and the third Sic region, the fourth SiC region having an impurity concentration of the second conductivity type higher than that of the second SiC region.

    摘要翻译： 半导体器件包括具有第一表面和第二表面的SiC层，与第一表面接触的第一电极，SiC层中的第一导电类型的第一SiC区域，第二导电类型的第二SiC区域 在SiC层中并且包围第一SiC区域的一部分，SiC层中的第二导电类型的第三SiC区域并且围绕第二SiC区域，具有低于第二导电类型的第二导电类型的第三导电类型的第三SiC区域 以及在第二SiC区域和第三Sic区域之间的SiC层中的第二导电类型的第四SiC区域，具有比第二SiC区域的第二导电类型的第二导电类型的杂质浓度高的第四SiC区域 SiC区域。

    GAS CIRCUIT BREAKER
    5.
    发明公开
    GAS CIRCUIT BREAKER 审中-公开

    公开(公告)号：US20240363298A1

    公开(公告)日：2024-10-31

    申请号：US18767165

    申请日：2024-07-09

    申请人： KABUSHIKI KAISHA TOSHIBA ,  TOSHIBA ENERGY SYSTEMS & SOLUTIONS CORPORATION

    发明人： Kei MAESHIMA ,  Yuko IMAZAWA ,  Tomoyuki YOSHINO ,  Toshiyuki UCHII ,  Takanori IIJIMA

    IPC分类号： H01H33/91

    CPC分类号： H01H33/91

    摘要： A gas circuit breaker of an embodiment includes an airtight container, a first arc contact and a second arc contact, an operation mechanism, and a spray unit. The first arc contact and the second arc contact are separated from each other for opening in a pole-open state. The operation mechanism separates the first arc contact from the second arc contact for opening. The spray unit sprays the arc-quenching gas accumulated under pressure to an arc discharge firing between the first arc contact and the second arc contact in the pole-open state after a state transitions from the pole-closed state to the pole-open state. A discharge channel that allows the space between the first arc contact and the second arc contact to communicate with an exhaust port formed at a position away from the contacts includes an accelerated taper in which a channel cross-sectional area of the discharge channel widens in a stepped shape from a position at which the first arc contact comes in contact with the second arc contact in the pole-closed state toward the exhaust port. A start point corner part and an end point corner part of a channel forming surface forming the discharge channel are rounded, the start point corner part and the end point corner part being located at a start point and an end point of the accelerated taper.

    Fixing ring, rotary electric machine, and resolver rotor
    8.
    发明授权
    Fixing ring, rotary electric machine, and resolver rotor 有权

    公开(公告)号：US12126231B2

    公开(公告)日：2024-10-22

    申请号：US18066894

    申请日：2022-12-15

    申请人： KABUSHIKI KAISHA TOSHIBA ,  TOSHIBA INFRASTRUCTURE SYSTEMS & SOLUTIONS CORPORATION

    发明人： Hajime Kotegawa ,  Hideki Hisada

    IPC分类号： H02K24/00 ,  H02K11/225

    CPC分类号： H02K24/00 ,  H02K11/225

    摘要： According to one embodiment, each of the first piece portions of a fixing ring is elastically deformed with a first bent portion to be bent toward a first surface side serving as a point of origin. In a map shape formed by projecting a plurality of broad portions and the first piece portions onto a virtual plane parallel to the first surface, each of the first bent portion intersects a straight line passing through a contact point of a circumscribed circle in contact with an outer circumferential edge of the broad portion on which the first piece portion is provided and a center point of the circumscribed circle. Each of the first piece portions is positioned between an inscribed circle in contact with an inner circumferential edge of the first piece portion and the first bent portion.