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公开(公告)号：US20200144097A1
公开(公告)日：2020-05-07
申请号：US16180691
申请日：2018-11-05
IPC分类号： H01L21/687 , H01L21/677 , H01L21/68
摘要： Systems and techniques for determining and correcting inter-wafer misalignments in a stack of wafers transported by a wafer handling robot are discussed. An enhanced automatic wafer centering system is provided that may be used to determine a smallest circle associated with the stack of wafers, which may then be used to determine whether or not the stack of wafer meets various process requirements and/or if a centering correction can be made to better align the wafers with a receiving station coordinate frame.
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公开(公告)号：US20240361696A1
公开(公告)日：2024-10-31
申请号：US18769048
申请日：2024-07-10
发明人： Samantha SiamHwa TAN , Jengyi YU , Da LI , Yiwen FAN , Yang PAN , Jeffrey MARKS , Richard A. GOTTSCHO , Daniel PETER , Timothy William WEIDMAN , Boris VOLOSSKIY , Wenbing YANG
CPC分类号： G03F7/167 , G03F7/0042 , G03F7/0043 , G03F7/168 , G03F7/36 , G03F7/40
摘要： Development of resists are useful, for example, to form a patterning mask in the context of high-resolution patterning. Development can be accomplished using a halide-containing chemistry such as a hydrogen halide. A metal-containing resist film may be deposited on a semiconductor substrate using a dry or wet deposition technique. The resist film may be an EUV-sensitive organo-metal oxide or organo-metal-containing thin film resist. After exposure, the photopatterned metal-containing resist is developed using wet or dry development.
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公开(公告)号：US20240360921A1
公开(公告)日：2024-10-31
申请号：US18682020
申请日：2022-08-09
CPC分类号： F16K37/0083 , H01L21/67017
摘要： An auto bit check feature for pneumatic valve verification as coupled with a gas line that may be coupled with a semiconductor device process chamber. The gas line can be charged to keep a connected valve closed, where activation of a solenoid forces the gas to bleed out and open the valve. The pneumatic gas line may be is purged to keep a connected valve closed, where activation of the solenoid forces gas to flow in the line and apply a pressure to open the valve. One or more airlines may be coupled between solenoid and the valve, depending on the type of solenoid and/or valve. Described is a method to auto verify that a valve is correctly connected to a specific solenoid in a pneumatic bank. The method can enable verification that a particular solenoid opens a desired valve.
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公开(公告)号：US12131890B2
公开(公告)日：2024-10-29
申请号：US17435340
申请日：2020-03-04
发明人： Ann Erickson , Darrell Ehrlich
IPC分类号： H01J37/32 , H01L21/683
CPC分类号： H01J37/32724 , H01J37/32642 , H01L21/6833 , H01J37/32082 , H01J2237/2007 , H01J2237/334
摘要： An electrostatic chuck system for a plasma processing chamber is provided. A base plate comprising Al—SiC is provided. A ceramic plate is disposed over the base plate. A bonding layer bonds the ceramic plate to the base plate.
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公开(公告)号：US12131886B2
公开(公告)日：2024-10-29
申请号：US18011830
申请日：2021-06-28
IPC分类号： H01J37/32
CPC分类号： H01J37/32183 , H01J37/32091 , H01J37/32119 , H01J2237/3348
摘要： A first radiofrequency signal generator is set to generate a low frequency signal. A second radiofrequency signal generator is set to generate a high frequency signal. An impedance matching system has a first input connected to an output of the first radiofrequency signal generator and a second input connected to an output of the second radiofrequency signal generator. The impedance matching system controls impedances at the outputs of the first and second radiofrequency signal generators. An output of the impedance matching system is connected to a radiofrequency supply input of a plasma processing system. A control module monitors reflected voltage at the output of the second radiofrequency signal generator. The control module determines when the reflected voltage indicates a change in impedance along a transmission path of the high frequency signal that is indicative of a particular process condition and/or event within the plasma processing system.
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公开(公告)号：US20240355667A1
公开(公告)日：2024-10-24
申请号：US18758576
申请日：2024-06-28
IPC分类号： H01L21/687 , H01J37/02 , H01J37/20 , H01J37/32 , H01L21/67
CPC分类号： H01L21/68742 , H01J37/023 , H01J37/20 , H01J37/32623 , H01J37/32642 , H01J37/32715 , H01L21/67069 , H01L21/68735
摘要： An edge ring arrangement for a processing chamber includes a first ring configured to surround and overlap a radially outer edge of an upper plate of a pedestal arranged in the processing chamber, a second ring arranged below the first moveable ring, wherein a portion of the first ring overlaps the second ring, a first actuator configured to actuate a first pillar to selectively move the first ring to a raised position and a lowered position relative to the pedestal, and a second actuator configured to actuate a second pillar to selectively move the second ring to a raised position and a lowered position relative to the pedestal.
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公开(公告)号：US20240355600A1
公开(公告)日：2024-10-24
申请号：US18761206
申请日：2024-07-01
IPC分类号： H01J37/32
CPC分类号： H01J37/32944 , H01J37/32165 , H01J37/32972
摘要： In particular embodiments, anomalous plasma events, which may include formation of an electric arc in a semiconductor processing chamber, may be detected and mitigated. In certain embodiments, a method may include detecting an optical signal emitted by a plasma, converting the optical signal to a voltage signal, and forming an adjusted voltage signal. Responsive to determining that the changes associated with the adjusted voltage signal exceed a threshold, an output power of an RF signal coupled to the chamber may be adjusted. Such adjustment may mitigate formation of the anomalous plasma event occurring within the chamber.
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公开(公告)号：US20240347337A1
公开(公告)日：2024-10-17
申请号：US18656209
申请日：2024-05-06
CPC分类号： H01L21/0228 , C23C16/308 , C23C16/325 , C23C16/401 , C23C16/45527 , C23C16/56 , H01L21/02112 , H01L21/02126 , H01L21/02131 , H01L21/0214 , H01L21/02211
摘要： Various embodiments include methods to produce low dielectric-constant (low-κ) films. In one embodiment, alternating ALD cycles and dopant materials are used to generate a new family of silicon low-κ materials. Specifically, these materials were developed to fill high-aspect-ratio structures with re-entrant features. However, such films are also useful in blanket applications where conformal nanolaminates are applicable. Various embodiments also disclose SiOF as well as SiOCF, SiONF, GeOCF, and GeOF. Analogous films may include halide derivatives with iodine and bromine (e.g., replace “F” with “I” or “Br”). Other methods, chemistries, and techniques are disclosed.
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公开(公告)号：US12119218B2
公开(公告)日：2024-10-15
申请号：US17310303
申请日：2020-01-28
发明人： Stephen M. Sirard , Ratchana Limary , Yang Pan , Diane Hymes
IPC分类号： H01L21/02 , H01L21/306 , H01L21/67
CPC分类号： H01L21/02118 , H01L21/02282 , H01L21/02307 , H01L21/02348 , H01L21/30625 , H01L21/6715
摘要： A method for protecting a surface of a substrate during processing includes a) providing a solution forming a co-polymer having a ceiling temperature; b) dispensing the solution onto a surface of the substrate to form a sacrificial protective layer, wherein the co-polymer is kinetically trapped to allow storage at a temperature above the ceiling temperature; c) exposing the substrate to ambient conditions for a predetermined period; and d) de-polymerizing the sacrificial protective layer by using stimuli selected from a group consisting of ultraviolet (UV) light and heat.
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公开(公告)号：US12116669B2
公开(公告)日：2024-10-15
申请号：US17322324
申请日：2021-05-17
IPC分类号： C23C16/40 , C23C16/455 , H01J37/32
CPC分类号： C23C16/45565 , H01J37/32743 , H01J2237/332 , H01J2237/334
摘要： A showerhead for a substrate processing system includes a lower surface, a plasma-facing upper surface, a gas plenum defined between the lower surface and the upper surface, and a plurality of injectors distributed on the lower surface, wherein the plurality of injectors are in fluid communication with the gas plenum. A plurality of through holes extends from the upper surface to the lower surface. Selected ones of the plurality of through holes have a diameter that is different from a diameter of remaining ones of the plurality of through holes. The diameter of the selected ones of the plurality of through holes is predetermined in accordance with a desired ratio of respective gases provided via the selected ones of the plurality of through holes and the remaining ones of the plurality of through holes.
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