摘要:
An alignment system for aligning an ingot of semiconductor or solar-grade material is provided. The alignment system includes a mounting block for attachment to the ingot, an optical device for aligning a predetermined centerline of the ingot with a reference line, and adjustable supports configured for supporting the ingot on at least four support points and configured to adjust the position of the ingot. The mounting block is movable between a horizontal position and a vertical position.
摘要:
Production of polycrystalline silicon in substantially closed-loop processes and systems is disclosed. The processes and systems generally involve disproportionation of trichlorosilane to produce silane or dichlorosilane and thermal decomposition of silane or dichlorosilane to produce polycrystalline silicon.
摘要:
Processes and systems for purifying silane-containing streams are disclosed with relatively less silane being lost in impurity streams by use of distillation and/or condensation operations.
摘要:
Methods and systems for use in detecting an air pocket in a single crystal material are described. One example method includes providing a matrix including a plurality of data units, the plurality of data units including image data related to a region of interest of the single crystal material; defining a first half and a second half of the matrix based on a first axis passing through the center of the matrix; determining, by a processor, a difference between each data unit of the first half and a corresponding data unit of the second half; calculating, by the processor, a first index value based on the determined differences; and identifying an air pocket within the single crystal material based on the first index value and a predetermined threshold.
摘要:
Production of polycrystalline silicon in a substantially closed-loop process is disclosed. The processes generally include decomposition of trichlorosilane produced from metallurgical grade silicon.
摘要:
Systems and methods are disclosed for connecting an ingot to a wire saw with an ingot holder, a bond beam, and a bar. The bar has an angled mating surface that engages a recessed surface formed in a slot of the bond beam. Mechanical fasteners are used to connect the tee bar to the ingot holder. The angle of the mating surface with respect to the recessed surface of the slot prevents deformation of the bond beam and prevents compromising the integrity of the adhesive bond between the ingot and the bond beam.
摘要:
Methods for producing aluminum trifluoride by acid digestion of fluoride salts of alkali metal or alkaline earth metal and aluminum, optionally, in the presence of a source of silicon; methods for producing silane that include acid digestion of by-products of silane production to produce aluminum trifluoride.
摘要:
Methods and systems for producing silane that use electrolysis to regenerate reactive components therein are disclosed. The methods and systems may be substantially closed-loop with respect to halogen, an alkali or alkaline earth metal and/or hydrogen.
摘要:
This invention generally relates to a process for making a multi-layered crystalline structure. The process includes implanting ions into a donor structure, bonding the implanted donor structure to a second structure to form a bonded structure, cleaving the bonded structure, and removing any residual portion of the donor structure from the finished multi-layered crystalline structure.
摘要:
A silicon-on-insulator or bonded wafer includes an upper portion having a trapezoid shape in cross-section and a lower portion having an outer peripheral edge having a curved shape.