SYSTEM AND METHOD FOR ALIGNING AN INGOT WITH MOUNTING BLOCK
    1.
    发明申请
    SYSTEM AND METHOD FOR ALIGNING AN INGOT WITH MOUNTING BLOCK 有权
    用安装块排列的系统和方法

    公开(公告)号:US20140183806A1

    公开(公告)日:2014-07-03

    申请号:US13731222

    申请日:2012-12-31

    IPC分类号: B24B5/50

    CPC分类号: B24B5/50 B28D5/0082

    摘要: An alignment system for aligning an ingot of semiconductor or solar-grade material is provided. The alignment system includes a mounting block for attachment to the ingot, an optical device for aligning a predetermined centerline of the ingot with a reference line, and adjustable supports configured for supporting the ingot on at least four support points and configured to adjust the position of the ingot. The mounting block is movable between a horizontal position and a vertical position.

    摘要翻译: 提供了用于对准半导体或太阳能级材料锭的对准系统。 所述对准系统包括用于附接到所述锭的安装块,用于使所述锭的预定中心线与参考线对准的光学装置,以及可调节支撑件,其被配置用于将所述锭支撑在至少四个支撑点上并且被配置为调整所述锭的位置 锭。 安装块可在水平位置和垂直位置之间移动。

    Symmetry Based Air Pocket Detection Methods and Systems
    4.
    发明申请
    Symmetry Based Air Pocket Detection Methods and Systems 有权
    基于对称的空气口袋检测方法与系统

    公开(公告)号:US20130179094A1

    公开(公告)日:2013-07-11

    申请号:US13712592

    申请日:2012-12-12

    发明人: John F. Valley

    IPC分类号: G01N21/00 G06F17/10

    摘要: Methods and systems for use in detecting an air pocket in a single crystal material are described. One example method includes providing a matrix including a plurality of data units, the plurality of data units including image data related to a region of interest of the single crystal material; defining a first half and a second half of the matrix based on a first axis passing through the center of the matrix; determining, by a processor, a difference between each data unit of the first half and a corresponding data unit of the second half; calculating, by the processor, a first index value based on the determined differences; and identifying an air pocket within the single crystal material based on the first index value and a predetermined threshold.

    摘要翻译: 描述了用于检测单晶材料中的气穴的方法和系统。 一个示例性方法包括提供包括多个数据单元的矩阵,所述多个数据单元包括与单晶材料的感兴趣区域相关的图像数据; 基于穿过所述矩阵的中心的第一轴限定所述矩阵的前半部和第二半部; 由处理器确定上半部的每个数据单元与下半部分的相应数据单元之间的差; 由所述处理器基于所确定的差异来计算第一指数值; 以及基于所述第一指标值和预定阈值来识别所述单晶材料内的空气袋。

    Systems and Methods For Connecting An Ingot To A Wire Saw
    6.
    发明申请
    Systems and Methods For Connecting An Ingot To A Wire Saw 有权
    将锭子连接到线锯的系统和方法

    公开(公告)号:US20130087132A1

    公开(公告)日:2013-04-11

    申请号:US13253509

    申请日:2011-10-05

    申请人: Peter D. Albrecht

    发明人: Peter D. Albrecht

    IPC分类号: B28D7/04 B28D1/02 B28D5/00

    摘要: Systems and methods are disclosed for connecting an ingot to a wire saw with an ingot holder, a bond beam, and a bar. The bar has an angled mating surface that engages a recessed surface formed in a slot of the bond beam. Mechanical fasteners are used to connect the tee bar to the ingot holder. The angle of the mating surface with respect to the recessed surface of the slot prevents deformation of the bond beam and prevents compromising the integrity of the adhesive bond between the ingot and the bond beam.

    摘要翻译: 公开的系统和方法用于将锭连接到具有锭保持器,粘结梁和杆的线锯。 杆具有与形成在接合梁的槽中的凹陷表面接合的成角度的配合表面。 机械紧固件用于将三通杆连接到锭架。 配合表面相对于槽的凹入表面的角度防止粘合梁的变形,并且防止损害铸锭和粘合梁之间的粘合剂粘结的完整性。

    Methods for producing aluminum trifluoride
    7.
    发明授权
    Methods for producing aluminum trifluoride 有权
    生产三氟化铝的方法

    公开(公告)号:US08388925B2

    公开(公告)日:2013-03-05

    申请号:US12969058

    申请日:2010-12-15

    IPC分类号: C01F7/50

    CPC分类号: C01F7/50 C01B33/10705

    摘要: Methods for producing aluminum trifluoride by acid digestion of fluoride salts of alkali metal or alkaline earth metal and aluminum, optionally, in the presence of a source of silicon; methods for producing silane that include acid digestion of by-products of silane production to produce aluminum trifluoride.

    摘要翻译: 通过酸性消除碱金属或碱土金属和铝的氟化物盐,任选地在硅源存在下生产三氟化铝的方法; 制造硅烷的方法,其包括硅烷生产副产物的酸消化以产生三氟化铝。

    Method for the preparation of a multi-layered crystalline structure
    9.
    发明授权
    Method for the preparation of a multi-layered crystalline structure 有权
    制备多层晶体结构的方法

    公开(公告)号:US08367519B2

    公开(公告)日:2013-02-05

    申请号:US12974772

    申请日:2010-12-21

    IPC分类号: H01L21/18 H01L21/762

    摘要: This invention generally relates to a process for making a multi-layered crystalline structure. The process includes implanting ions into a donor structure, bonding the implanted donor structure to a second structure to form a bonded structure, cleaving the bonded structure, and removing any residual portion of the donor structure from the finished multi-layered crystalline structure.

    摘要翻译: 本发明一般涉及制造多层晶体结构的方法。 该方法包括将离子注入供体结构中,将注入的供体结构键合到第二结构以形成结合结构,切割结合的结构,以及从最终的多层晶体结构去除供体结构的任何残留部分。