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公开(公告)号：US11955311B2
公开(公告)日：2024-04-09
申请号：US17835875
申请日：2022-06-08
发明人： Shinya Takemura
IPC分类号： H01J37/08 , G06N20/00 , H01J37/304 , H01J37/305 , H01J37/317
CPC分类号： H01J37/3056 , G06N20/00 , H01J37/08 , H01J37/304 , H01J37/3171
摘要： An ion beam irradiation apparatus includes modules for generating an ion beam according to a recipe, and a control device. The control device receives the recipe including a processing condition for new processing, reads, from a monitored value storage, a monitored value that indicates a state of a module during a last processing immediately before the new processing, inputs the processing condition and the monitored value to a trained machine learning algorithm and receives, as an output from the trained machine learning algorithm, an initial value for the module, and outputs the initial value to the module to set up the module for generating the ion beam.
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公开(公告)号：US11929266B2
公开(公告)日：2024-03-12
申请号：US17680943
申请日：2022-02-25
发明人： Takashi Sakamoto
IPC分类号： H01L21/00 , H01J37/05 , H01J37/20 , H01J37/317 , H01L21/67 , H01L21/683
CPC分类号： H01L21/67103 , H01J37/05 , H01J37/20 , H01J37/3171 , H01L21/6833 , H01J2237/2007 , H01J2237/20235
摘要： A wafer support device includes a support base having a wafer-facing surface, the support base comprising a heater, and an electrostatic chuck supported by the support base, the electrostatic chuck having an attraction surface configured to attract a wafer for wafer processing. During the wafer processing, the wafer-facing surface and the attraction surface are positioned at respective different positions in a direction perpendicular to the wafer-facing surface so that the attraction surface is separated from the wafer-facing surface by a distance.
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公开(公告)号：US20240038499A1
公开(公告)日：2024-02-01
申请号：US18361160
申请日：2023-07-28
发明人： Yuta IWANAMI , Yuya HIRAI , Suguru ITOI , Weijiang ZHAO
CPC分类号： H01J37/32412 , H01J37/3244 , H01J37/32724 , C23C14/48
摘要： An ion source includes a vaporizer, a plasma chamber, and a controller. The vaporizer produces a reaction product by supplying, through a first gas supply line to a crucible in which a solid material is installed, a reactive gas that reacts with the solid material, and vaporizes the reaction product by heating the crucible with a heater. The plasma chamber is supplied with a vapor from the vaporizer through a vapor supply line, and has a second gas supply line connected to the plasma chamber separately from the vapor supply line. The controller controls the heater to heat the crucible while a gas is being supplied from the second gas supply line to the plasma chamber and stops a supply of the reactive gas through the first gas supply line to the crucible.
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公开(公告)号：US10784075B2
公开(公告)日：2020-09-22
申请号：US16655012
申请日：2019-10-16
发明人： Shinya Hisada , Kohei Tanaka , Shigehisa Tamura , Makoto Nakaya
摘要： An apparatus provided with a wafer processing chamber that houses a wafer supporting mechanism supporting a wafer and is used to irradiate the wafer supported by the wafer supporting mechanism with an ion beam and a transport mechanism housing chamber that houses a transport mechanism provided underneath the wafer processing chamber and used for moving the wafer supporting mechanism in a substantially horizontal direction, wherein an aperture used for moving the wafer supporting mechanism along with a coupling member coupling the wafer supporting mechanism to the transport mechanism is formed in the direction of movement of the transport mechanism in a partition wall separating the wafer processing chamber from the transport mechanism housing chamber.
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公开(公告)号：US10600608B1
公开(公告)日：2020-03-24
申请号：US16353475
申请日：2019-03-14
发明人： Masakazu Adachi , Shigeki Sakai , Yuya Hirai , Takayuki Murayama , Tomoya Taniguchi , Weijiang Zhao
摘要： An ion source is provided. The ion source includes a plasma generation chamber, a plate member, and an extraction electrode. The plasma generation chamber is supplied with a halogen-containing material. The plate member is provided on an end of the plasma generation chamber located on a side toward which an ion beam is extracted. The extraction electrode is disposed downstream of the plate member. The plate member is formed with a gas supply passage via which hydrogen gas is supplied to the extraction electrode.
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公开(公告)号：US10222400B2
公开(公告)日：2019-03-05
申请号：US15271854
申请日：2016-09-21
摘要： A beam current measuring device capable of performing measurement of a beam current distribution of a charged particle beam seamlessly and continuously in an arbitrary direction is provided. The beam current measuring device includes collector electrodes whose detection regions seamlessly continue in an arrangement direction thereof.
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公开(公告)号：US10199201B2
公开(公告)日：2019-02-05
申请号：US15902009
申请日：2018-02-22
发明人： Hideki Fujita , Suguru Itoi
IPC分类号： H05B31/26 , H01J37/317 , H01J37/32
摘要： A plasma source is provided. The plasma source includes a chamber body, a supply passage, a vacuum connector, an antenna, a first insulator, a second insulator, and a conductor. The chamber body has an opening for emitting ions or electrons. The supply passage penetrates through a first peripheral wall of the chamber body. The vacuum connector is provided in a second peripheral wall of the chamber body at a position opposed to the opening. The antenna has a base end connected to the vacuum connector, and extends inside the chamber body toward the opening. The first insulator covers a first region of the antenna at a distal end of the antenna inside the chamber body. The second insulator covers a second region of the antenna at the base end of the antenna inside the chamber body. The conductor covers the second insulator.
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公开(公告)号：US10109509B2
公开(公告)日：2018-10-23
申请号：US15667348
申请日：2017-08-02
发明人： Kunifumi Takaoka
IPC分类号： H01L21/425 , H01L21/67 , H01L21/677 , H01L21/683
摘要： A semiconductor manufacturing apparatus, which is provided with a first storage chamber that stores a substrate to be processed, a second storage chamber that stores a dummy substrate, a substrate support apparatus with a heating function that supports a substrate, and a substrate transport apparatus that transports the substrates between the storage chambers and the substrate support apparatus, is further provided with a controller which, in the event that the temperature of substrate processing in a preceding substrate processing step is higher than the temperature of substrate processing in a subsequent substrate processing step, operates the substrate transport apparatus to transport the dummy substrate, whose temperature is lower than the temperature of substrate processing in the preceding substrate processing step, prior to carrying out the subsequent substrate processing step.
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公开(公告)号：US08710469B2
公开(公告)日：2014-04-29
申请号：US14020285
申请日：2013-09-06
发明人： Hirofumi Asai , Yoshikazu Hashino
IPC分类号： G21G5/00
CPC分类号： H01L21/265 , H01J37/09 , H01J37/3171 , H01J2237/31711
摘要： In an ion implantation method, ion implantation into a substrate is performed while changing a relative positional relation between an ion beam and the substrate. A first ion implantation process in which a uniform dose amount distribution is formed within the substrate and a second ion implantation process in which a non-uniform dose amount distribution is formed within the substrate are performed in a predetermined order. Moreover, a cross-sectional size of an ion beam irradiated on the substrate during the second ion implantation process is set smaller than a cross-sectional size of an ion beam irradiated on the substrate during the first ion implantation process.
摘要翻译： 在离子注入方法中，在改变离子束和衬底之间的相对位置关系的同时进行离子注入衬底。 在基板内形成均匀剂量分布的第一离子注入工艺和在基板内形成不均匀剂量分布的第二离子注入工艺以预定顺序进行。 此外，在第二离子注入工艺期间照射在衬底上的离子束的横截面尺寸设定为小于在第一离子注入工艺期间照射在衬底上的离子束的横截面尺寸。
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公开(公告)号：US08702920B2
公开(公告)日：2014-04-22
申请号：US12877170
申请日：2010-09-08
IPC分类号： C23C14/00
CPC分类号： H01J27/022
摘要： A repeller structure is provided in a plasma generating chamber of an ion source facing a cathode that emits electrons for ionizing a source gas in the plasma generating chamber to generate a plasma. The repeller structure reflects the ions toward the cathode. The repeller structure includes a sputtering target that is sputtered by the plasma to emit predetermined ions, the sputtering target including a through hole that connects a sputtering surface and a back surface of the sputtering target; and an electrode body that is inserted in the through hole, the electrode body including a repeller surface that is exposed to the sputtering surface side through the through hole.
摘要翻译： 在面向阴极的离子源的等离子体发生室中设置了排斥结构，该阴极发射用于电离等离子体发生室中的源气体的电子以产生等离子体。 排斥结构将离子反射向阴极。 反射器结构包括由等离子体溅射以发射预定离子的溅射靶，溅射靶包括连接溅射表面和溅射靶的后表面的通孔; 以及电极体，其插入在所述通孔中，所述电极体包括通过所述通孔暴露于所述溅射表面侧的反射器表面。
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