公开(公告)号：US20170110520A1

公开(公告)日：2017-04-20

申请号：US15127011

申请日：2015-03-13

申请人： OSRAM OLED GmbH

发明人： Thomas Wehlus ,  Arne Fleißner ,  Thilo Reusch ,  Daniel Riedel

IPC分类号： H01L27/32 ,  H01L51/56

CPC分类号： H01L27/3204 ,  H01L51/56

摘要： An organic radiation-emitting component and a method for manufacturing an organic radiation-emitting component are disclosed. In an embodiment, the component includes a base substrate and a plurality of light-emitting units disposed on the base substrate, wherein the light-emitting units are arranged laterally offset with respect to one another, wherein the plurality of light-emitting units is divided into light-emitting units of a first type and light-emitting units of a second type, wherein a current flow through the light-emitting units of the first type is directed in an opposite direction to a current flow through the light-emitting units of the second type during operation, and wherein the light-emitting units are grouped in neighboring pairs, each neighboring pair consists of a light-emitting unit of a first type and a light-emitting unit of a second type, both first electrodes or both second electrodes of which are electrically connected to one another.

公开(公告)号：US20200185624A1

公开(公告)日：2020-06-11

申请号：US16093569

申请日：2017-04-11

申请人： OSRAM OLED GmbH

发明人： Dominik Pentlehner ,  Niels Gerlitzki ,  Florian Kessler ,  Anna Maltenberger ,  Günter Schmid ,  Sabine Szyszkowski ,  Dimitrios Zevgitis

IPC分类号： H01L51/00

摘要： An organic electronic device having a charge carrier generation layer is disclosed. In an embodiment an organic electronic device includes a first organic functional layer stack, a second organic functional layer stack and a charge carrier generation layer arranged therebetween, the charge carrier generation layer including an n-conducting region, an organic p-doped region and an intermediate region arranged therebetween, wherein the organic p-doped region has as a p-type dopant a fluorinated sulfonimide metal salt.

公开(公告)号：US20160155991A1

公开(公告)日：2016-06-02

申请号：US14900151

申请日：2014-06-30

申请人： OSRAM OLED GmbH

发明人： Arndt Jaeger ,  Andreas Rausch

IPC分类号： H01L51/52 ,  H01L51/50 ,  H01L51/56

CPC分类号： H01L51/5278 ,  H01L51/0078 ,  H01L51/0084 ,  H01L51/009 ,  H01L51/0092 ,  H01L51/506 ,  H01L51/5064 ,  H01L51/5076 ,  H01L51/56 ,  H01L2251/558

摘要： An organic light-emitting component has a substrate, a first electrode on the substrate, a first organic functional layer stack on the first electrode, a charge carrier generation layer stack on the first organic functional layer stack, a second organic functional layer stack on the charge carrier generation layer stack and a second electrode on the second organic functional layer stack. The charge carrier generation layer stack has at least one hole transport layer, one electron transport layer and one intermediate layer. The at least one intermediate layer includes a multinuclear phthalocyanine derivative.

摘要翻译： 有机发光部件具有基板，基板上的第一电极，第一电极上的第一有机功能层堆叠，第一有机功能层堆叠上的电荷载体产生层堆叠，第二有机功能层堆叠 电荷载体生成层堆叠和第二有机功能层堆叠上的第二电极。 电荷载体产生层堆叠具有至少一个空穴传输层，一个电子传输层和一个中间层。 至少一个中间层包括多核酞菁衍生物。

公开(公告)号：US12100783B2

公开(公告)日：2024-09-24

申请号：US17050793

申请日：2019-04-11

申请人： OSRAM OLED GmbH

发明人： Tansen Varghese ,  Adrian Stefan Avramescu

IPC分类号： H01L21/00 ,  H01L27/15 ,  H01L33/00 ,  H01L33/20 ,  H01S5/02 ,  H01S5/04 ,  H01S5/042 ,  H01L33/16

CPC分类号： H01L33/20 ,  H01L27/156 ,  H01L33/0062 ,  H01L33/0095 ,  H01S5/0201 ,  H01S5/041 ,  H01S5/042 ,  H01L33/16 ,  H01S2304/04

摘要： An optoelectronic semiconductor body is provided with a layer stack with an active region which is configured to emit electromagnetic radiation and which includes a main extension plane, wherein the layer stack comprises side walls which extend transversely to the main extension plane of the active region, and the side walls are covered at least in places with a cover layer which is formed with at least one semiconductor material. In addition, an arrangement of a plurality of optoelectronic semiconductor bodies and a method for producing an optoelectronic semiconductor body are provided.

公开(公告)号：US12062887B2

公开(公告)日：2024-08-13

申请号：US18322661

申请日：2023-05-24

申请人： OSRAM OLED GmbH

发明人： Sven Gerhard ,  Christoph Eichler ,  Alfred Lell ,  Bernhard Stojetz

IPC分类号： H01S5/22 ,  H01S5/042 ,  H01S5/32 ,  H01S5/323

CPC分类号： H01S5/22 ,  H01S5/04253 ,  H01S5/04254 ,  H01S5/3211 ,  H01S5/32341 ,  H01S2301/16

摘要： A semiconductor laser diode is specified, the semiconductor laser diode includes a semiconductor layer sequence having an active layer having a main extension plane and which, in operation, is configured to generate light in an active region and emit light via a light-outcoupling surface, the active region extending from a back surface opposite the light-outcoupling surface to the light-outcoupling surface along a longitudinal direction in the main extension plane, the semiconductor layer sequence having a surface region on which a first cladding layer is applied in direct contact, the first cladding layer having a transparent material from a material system different from the semiconductor layer sequence, and the first cladding layer being structured and having a first structure.

公开(公告)号：US12015107B2

公开(公告)日：2024-06-18

申请号：US18180992

申请日：2023-03-09

申请人： OSRAM OLED GmbH

发明人： Sebastian Pickel ,  Johannes Saric ,  Wolfgang Schmid ,  Anna Strozecka-Assig ,  Johannes Baur

IPC分类号： H01L33/38 ,  H01L33/40 ,  H01L33/42 ,  H01L33/46 ,  H01L33/30

CPC分类号： H01L33/38 ,  H01L33/387 ,  H01L33/405 ,  H01L33/42 ,  H01L33/46 ,  H01L33/30 ,  H01L2933/0016 ,  H01L2933/0025

摘要： In one embodiment, the optoelectronic semiconductor chip comprises a semiconductor layer sequence with an active zone for generating a radiation. The semiconductor layer sequence is based on AlInGaP and/or on AlInGaAs. A metal mirror for the radiation is located on a rear side of the semiconductor layer sequence opposite a light extraction side. A protective metallization is applied directly to a side of the metal mirror facing away from the semiconductor layer sequence. An adhesion promoting layer is located directly on a side of the metal mirror facing the semiconductor layer sequence. The adhesion promoting layer is an encapsulation layer for the metal mirror, so that the metal mirror is encapsulated at least at one outer edge by the adhesion promoting layer together with the protective metallization.

公开(公告)号：US12009460B2

公开(公告)日：2024-06-11

申请号：US16768515

申请日：2018-12-05

申请人： Osram OLED GmbH

发明人： Luca Haiberger

IPC分类号： H01L33/50 ,  H01L33/00 ,  H01L33/46 ,  H01L33/48 ,  H01L33/52 ,  H01L33/60

CPC分类号： H01L33/505 ,  H01L33/60 ,  H01L2933/0041 ,  H01L2933/0058

摘要： The invention relates to a method for producing a conversion element having the following steps: providing a frame having an opening; applying a sacrificial layer at least to a side surface of the at least one opening; applying a reflective layer to the sacrificial layer; introducing a conversion material into the at least one opening, the conversion material covering the reflective layer; and removing the sacrificial layer and the frame.

公开(公告)号：US11961820B2

公开(公告)日：2024-04-16

申请号：US16768208

申请日：2019-02-05

申请人： OSRAM OLED GmbH

发明人： Simeon Katz ,  Mathias Wendt ,  Sophia Huppmann ,  Marcus Zenger ,  Jens Mueller

IPC分类号： H01L23/00 ,  H01L33/62

CPC分类号： H01L24/89 ,  H01L24/05 ,  H01L24/08 ,  H01L33/62 ,  H01L2224/05166 ,  H01L2224/05169 ,  H01L2224/05582 ,  H01L2224/05611 ,  H01L2224/05644 ,  H01L2224/08111 ,  H01L2224/08146 ,  H01L2224/08502 ,  H01L2224/80805 ,  H01L2224/80895 ,  H01L2224/80896 ,  H01L2924/12041 ,  H01L2933/0066

摘要： A method for producing a connection between component parts and a component made of component parts are disclosed. In an embodiment, a includes providing a first component part having a first exposed insulation layer and a second component part having a second exposed insulation layer, wherein each of the insulation layers has at least one opening, joining together the first and second component parts such that the opening of the first insulation layer and the opening of the second insulation layer overlap in top view, wherein an Au layer and a Sn layer are arranged one above the other in at least one of the openings and melting the Au layer and the Sn layer to form an AuSn alloy, wherein the AuSn alloy forms a through-via after cooling electrically conductively connecting the first component part to the second component part.

公开(公告)号：US20240067877A1

公开(公告)日：2024-02-29

申请号：US18502113

申请日：2023-11-06

申请人： OSRAM OLED GmbH

发明人： Markus SEIBALD ,  Simon PESCHKE ,  Gregor HOERDER ,  Gina Maya ACHRAINER ,  Klaus WURST ,  Dominik BAUMANN ,  Tim FIEDLER ,  Stefan LANGE ,  Hubert HUPPERTZ ,  Daniel DUTZLER ,  Thorsten SCHROEDER ,  Daniel BICHLER ,  Gudrun PLUNDRICH

IPC分类号： C09K11/77 ,  C09K11/08 ,  H01L33/50

CPC分类号： C09K11/7734 ,  C09K11/0883 ,  H01L33/502

摘要： A lighting device includes a phosphor having the general molecular formula (MA)a(MB)b(MC)c(MD)d(TA)e(TB)f(TC)g(TD)h(TE)i(TF)j(XA)k(XB)l(XC)m(X D)n:E. MA is selected from a group of monovalent metals, MB is selected from a group of divalent metals, MC is selected from a group of trivalent metals, MD is selected from a group of tetravalent metals, TA is selected from a group of monovalent metals, TB is selected from a group of divalent metals, TC is selected from a group of trivalent metals, TD is selected from a group of tetravalent metals, TE is selected from a group of pentavalent elements, TF is selected from a group of hexavalent elements, XA is selected from a group of elements which comprises halogens, XB is selected from a group of elements which comprises O, S and combinations thereof, XC=N and XD=C and E=Eu, Ce, Yb and/or Mn.

公开(公告)号：US20240047625A1

公开(公告)日：2024-02-08

申请号：US18489511

申请日：2023-10-18

申请人： OSRAM OLED GmbH

发明人： Luca HAIBERGER ,  Sam CHOU

IPC分类号： H01L33/48 ,  H01L33/60

CPC分类号： H01L33/486 ,  H01L33/60 ,  H01L33/50

摘要： A radiation-emitting component is specified with



a carrier having a cavity,
a radiation-emitting semiconductor chip which is arranged on a bottom surface delimiting the cavity and which is configured to generate primary electromagnetic radiation, and
a first reflector layer arranged above a top surface of the semiconductor chip, wherein
the carrier is transparent in places to the primary electromagnetic radiation, and
the semiconductor chip is spaced apart from at least one side surface delimiting the cavity.