DEEP TRENCH ISOLATION STRUCTURES FOR CMOS IMAGE SENSOR AND METHODS THEREOF

    公开(公告)号:US20240363660A1

    公开(公告)日:2024-10-31

    申请号:US18306517

    申请日:2023-04-25

    发明人: Hui Zang

    IPC分类号: H01L27/146

    摘要: A pixel includes a semiconductor substrate having a first side and a second side. Extending from the first side is a first deep trench isolation (DTI) structure and a second DTI structure. The first DTI structure includes a wide portion and a narrow portion extending from the wide portion. A first width of the wide portion is greater than a second width of the narrow portion, and the wide portion extends to a first depth. The pixel further includes a photodiode region disposed in the semiconductor substrate between the first DTI structure and the second DTI structure. A cell deep trench isolation (CDTI) structure is disposed between the wide portion of the first DTI structure and the second DTI structure. The CDTI structure extends to a second depth. The first depth and the second depth extend a substantially equal distance from the first side of the semiconductor substrate.

    APPARATUS AND METHOD FOR CURVED-SURFACE IMAGE SENSOR

    公开(公告)号:US20240355846A1

    公开(公告)日:2024-10-24

    申请号:US18752633

    申请日:2024-06-24

    IPC分类号: H01L27/146 H04N23/54

    摘要: A curved-surface image-sensor assembly has a porous carrier having a concave surface with a thinned image sensor bonded by an adhesive to its concave surface of the porous carrier; the porous carrier is mounted into a water-resistant package. The sensor assembly is made by fabricating a thinned, flexible, image-sensor integrated circuit (IC) and applying adhesive to a non-illuminated side of the IC; positioning the IC over a concave surface of a porous carrier; applying vacuum through the porous carrier to suck the IC onto the concave surface of the porous carrier; and curing the adhesive to bond the IC to the concave surface of the porous carrier.

    PHASE DETECTION AUTO FOCUS WITH HORIZONTAL/VERTICAL QUAD PHASE DETECTION

    公开(公告)号:US20240334085A1

    公开(公告)日:2024-10-03

    申请号:US18295207

    申请日:2023-04-03

    摘要: An imaging device includes a pixel array with 2×2 pixel circuits arranged in rows and columns. Each 2×2 pixel circuit includes 4 photodiodes. Bitlines are coupled to the 2×2 pixel circuits and a color filter array is disposed over photodiodes of the pixel array. The color filter array includes color filters having a first color, color filters having a second color, color filters having a third color. The photodiodes of each 2×2 pixel circuits are covered by one of the color filters. Photodiodes covered by color filters having the first color and photodiodes covered by color filters having the second color are configured to provide non-phase detection (non-PD) information. Photodiodes covered by color filters having the third color are configured to provide phase detection (PD) information. Half of the 2×2 pixel circuits have the photodiodes covered by color filters having the third color.

    HIGH DYNAMIC RANGE CMOS IMAGE SENSOR PIXEL WITH REDUCED METAL-INSULATOR-METAL LATERAL OVERFLOW INTEGRATION CAPACITOR LAG

    公开(公告)号:US20240314464A1

    公开(公告)日:2024-09-19

    申请号:US18670698

    申请日:2024-05-21

    发明人: Woon Il Choi

    摘要: A pixel circuit includes a photodiode configured to photogenerate image charge in response to incident light. A floating diffusion is coupled to receive the image charge from the photodiode. A transfer transistor is coupled between the photodiode and the floating diffusion to transfer the image charge from the photodiode to the floating diffusion. A reset transistor is coupled between a bias voltage source and the floating diffusion. A drain of the reset transistor is coupled to the bias voltage source. The reset transistor is configured to be switched in response to a reset control signal. A lateral overflow integration capacitor (LOFIC) including an insulating region is disposed between a first metal electrode and a second metal electrode. The first metal electrode is coupled to the drain of the reset transistor. The second metal electrode is coupled to a source of the reset transistor and selectively coupled to the floating diffusion.

    Image Sensor Having Glue Cavity
    7.
    发明公开

    公开(公告)号:US20240282789A1

    公开(公告)日:2024-08-22

    申请号:US18171805

    申请日:2023-02-21

    IPC分类号: H01L27/146

    摘要: An image sensor comprises an image sensor chip comprising a semiconductor substrate having a top surface and a plurality of microlenses disposed on the top surface; a cover glass having a first side in contact with air and a second side opposite to the first side; and a multi-layer structure disposed between the plurality of microlenses and the cover glass, which comprises: a bottom layer directly in contact with the plurality of microlenses, where the refractive index of the bottom layer is lower than the refractive index of the plurality of microlenses, and a top layer directly in contact with the second side of the cover glass, where the top layer is an optical glue made for bonding two optical elements.

    LOFIC CIRCUIT FOR IN PIXEL METAL-INSULATOR-METAL(MIM) CAPACITOR LAG CORRECTION AND ASSOCIATED CORRECTION METHODS

    公开(公告)号:US20240244344A1

    公开(公告)日:2024-07-18

    申请号:US18154715

    申请日:2023-01-13

    摘要: A pixel circuit includes a photodiode configured to photogenerate image charge in response to incident light. A floating diffusion is coupled to receive the image charge from the photodiode. A transfer transistor is coupled between the photodiode and the floating diffusion. The transfer transistor is configured to transfer the image charge from the photodiode to the floating diffusion. A reset transistor is coupled between a reset voltage and the floating diffusion. A lateral overflow integration capacitor (LOFIC) network is coupled between the reset transistor and a bias voltage source. The LOFIC network includes a main LOFIC coupled between the reset transistor and the bias voltage source, and a plurality of subordinate capacitor-switch pairs, each including a subordinate LOFIC and a switch transistor coupled to the subordinate LOFIC. Each of the plurality of subordinate capacitor-switch pairs is coupled between the reset transistor and the bias voltage source.

    COMPOUND LENS
    10.
    发明公开
    COMPOUND LENS 审中-公开

    公开(公告)号:US20240241347A1

    公开(公告)日:2024-07-18

    申请号:US18098649

    申请日:2023-01-18

    IPC分类号: G02B13/00 G02B9/34

    CPC分类号: G02B13/004 G02B9/34

    摘要: A compound lens includes four coaxially aligned lenses: first lens and, in order of increasing distance therefrom and on a same side thereof, a second lens, a third lens, and a fourth lens. The first lens and the third lens are negative lenses. The second lens and the fourth lens are positive lenses. An image-side surface of the second lens and an object-side surface of the third lens have respective radii of curvature of equal magnitude.