公开(公告)号：US20190237536A1

公开(公告)日：2019-08-01

申请号：US16089448

申请日：2017-02-02

申请人： Sumitomo Electric Industries, Ltd.

发明人： Toru Hiyoshi

IPC分类号： H01L29/06 ,  H01L29/16 ,  H01L29/10 ,  H01L29/423 ,  H01L29/739 ,  H01L29/78

摘要： A silicon carbide semiconductor device includes: a silicon carbide substrate; a first silicon carbide layer disposed on the silicon carbide substrate; a second silicon carbide layer disposed on the first silicon carbide layer; a third silicon carbide layer disposed on the second silicon carbide layer; a fourth silicon carbide layer disposed on the third silicon carbide layer; and a first impurity region formed to extend through the second silicon carbide layer, the third silicon carbide layer and the fourth silicon carbide layer. A trench is formed in the silicon carbide semiconductor device. The silicon carbide semiconductor device includes: a gate insulating film in contact with a wall of the trench; a gate electrode; a second impurity region disposed below the trench; a third impurity region formed below the first impurity region; and a fourth impurity region formed between the second impurity region and the third impurity region.

公开(公告)号：US20190054870A1

公开(公告)日：2019-02-21

申请号：US15761451

申请日：2016-09-12

申请人： AutoNetworks Technologies, Ltd. ,  Sumitomo Wiring Systems, Ltd. ,  SUMITOMO ELECTRIC INDUSTRIES, LTD.

发明人： Yoshihiro Hida

IPC分类号： B60R16/033 ,  H02J7/14

摘要： Provided is an in-vehicle power supply device that is less susceptible to the occurrence of sneak current between a main battery and a sub-battery that supply power externally. The in-vehicle power supply device includes a main battery for in-vehicle use, a sub-battery for in-vehicle use, a switch, a main power supply path, a sub-power supply path, a relay, and wiring. The switch has a first end connected to the main battery and the main power supply path, and a second end connected to the sub-battery. The relay has a first contact connected to a sub-power supply path, and a second contact connected to the second end. The first contact and the second contact form a pair. The wiring is a connection path that connects the first end and the first contact, and supplies power from the main battery to the sub-power supply path.

公开(公告)号：US20190009684A1

公开(公告)日：2019-01-10

申请号：US15988008

申请日：2018-05-24

申请人： AutoNetworks Technologies, Ltd. ,  Sumitomo Wiring Systems, Ltd. ,  SUMITOMO ELECTRIC INDUSTRIES, LTD.

发明人： Hiromichi Yasunori

IPC分类号： B60L11/18 ,  H02M3/04

摘要： Provided is a power system that is able to readily address design changes, together with suppressing leakage current from a conduction path of a high voltage to a conduction path of a low voltage. A power system is provided with a voltage transformation device that steps down an input voltage to a 12V voltage that is lower than the 48V voltage and outputs the resultant voltage, a high-voltage power box that is electrically connected to the voltage transformation device and outputs electric power having a voltage of 48V, and a low-voltage power box that is electrically connected to the voltage transformation device and outputs electric power having a voltage of 12V, the voltage transformation device and the high-voltage power box being detachably connected to each other.

公开(公告)号：US20180358633A1

公开(公告)日：2018-12-13

申请号：US15561856

申请日：2016-11-16

申请人： Sumitomo Electric Industries, Ltd.

发明人： Takashi Kanno

IPC分类号： H01M8/0273 ,  H01M8/18 ,  H01M8/2455 ,  H01M8/026

CPC分类号： H01M8/0273 ,  H01M8/02 ,  H01M8/0258 ,  H01M8/026 ,  H01M8/18 ,  H01M8/188 ,  H01M8/2455 ,  Y02E60/528

摘要： A cell frame includes a bipolar plate in contact with an electrode constituting a battery cell; and a frame body surrounding a periphery of the bipolar plate, wherein the frame body includes a liquid supply manifold through which an electrolyte is supplied into the battery cell, the bipolar plate includes, in a surface facing the electrode, a plurality of main groove portions that are arranged adjacent to one another and through which the electrolyte flows, at least one of the frame body and the bipolar plate includes a supply flow directing portion configured to distribute, in a direction in which the main groove portions are arranged adjacent to one another, the electrolyte supplied through the liquid supply manifold, to supply the electrolyte to each of the main groove portions, and each of widths Wi of electrolyte inlets of the main groove portions, and a width Wr of the supply flow directing portion in a direction orthogonal to the direction in which the main groove portions are arranged adjacent to one another, satisfy a width ratio Wr/Wi of 1.5 or more and 10 or less.

公开(公告)号：US20170151625A1

公开(公告)日：2017-06-01

申请号：US15322674

申请日：2015-06-09

申请人： Sumitomo Electric Industries, Ltd.

发明人： Yoshiharu Utsumi ,  Hiroka Aoyama ,  Keiichi Tsuda

IPC分类号： B23K20/12 ,  B23K20/227

CPC分类号： B23K20/12 ,  B23K20/227 ,  B23K2103/04

摘要： A spot friction welding tool is for performing spot friction welding of a first member and a second member by superposing the first member and the second member and pressing the spot friction welding tool against the first member and the second member from the first member side. Each of the first member and the second member is a steel plate having a tensile strength of not lower than 590 MPa. The spot friction welding tool is rotatable around a rotation axis. The spot friction welding tool includes a column having a shoulder at a tip end thereof, and a cylindrical or truncated conical probe protruding from the shoulder in a direction of extension of the rotation axis.

公开(公告)号：US20170053529A1

公开(公告)日：2017-02-23

申请号：US15306526

申请日：2015-04-23

申请人： SUMITOMO ELECTRIC INDUSTRIES, LTD.

发明人： Ryo YOKOYAMA ,  Osamu HATTORI

IPC分类号： G08G1/081 ,  G08G1/01

CPC分类号： G08G1/081 ,  G08G1/0112 ,  G08G1/0116 ,  G08G1/012 ,  G08G1/0145 ,  G08G1/08

摘要： A central device 4 includes: a measurement processing unit 410 that acquires an inflow traffic volume at a first intersection Ci-1; an estimation processing unit 411 that estimates an inflow traffic volume at a second intersection Ci-2 on the basis of at least one of the inflow traffic volume at the first intersection Ci-1 and probe data obtained from a traveling vehicle 5; a control processing unit 412 that generates signal control parameters for the first intersection Ci-1 on the basis of the inflow traffic volume at the first intersection Ci-1, and generates signal control parameters for the second intersection Ci-2 on the basis of the estimated inflow traffic volume at the second intersection Ci-2; and a communication unit 403 that transmits the generated signal control parameters for the first intersection Ci-1 to a traffic signal controller 1a at the first intersection Ci-1, and transmits the generated signal control parameters for the second intersection Ci-2 to a traffic signal controller 1a at the second intersection Ci-2.

摘要翻译： 中央设备4包括：测量处理单元410，其获取第一交点Ci-1处的入流业务量; 估计处理单元411，其基于第一交点Ci-1的流入交通量和从行驶车辆5得到的探测数据中的至少一个来估计第二交叉口Ci-2处的流入交通量; 控制处理单元412，其基于第一交点Ci-1处的流入流量生成用于第一交点Ci-1的信号控制参数，并且基于第一交叉点Ci-1生成用于第二交叉点Ci-2的信号控制参数 第二个交点Ci-2的估计入流量; 以及通信单元403，其将生成的第一交点Ci-1的信号控制参数发送到第一交点Ci-1处的交通信号控制器1a，并将生成的第二交点Ci-2的信号控制参数发送到交通 信号控制器1a在第二交点Ci-2处。

公开(公告)号：US20160233080A1

公开(公告)日：2016-08-11

申请号：US15024110

申请日：2014-08-11

申请人： SUMITOMO ELECTRIC INDUSTRIES, LTD.

发明人： So Tanaka ,  Kyoko Okita ,  Taro Nishiguchi ,  Ryosuke Kubota ,  Kenji Kanbara

IPC分类号： H01L21/02 ,  H01L29/04 ,  H01L29/16

CPC分类号： H01L21/02021 ,  C30B23/00 ,  C30B25/186 ,  C30B29/36 ,  C30B33/00 ,  H01L21/02378 ,  H01L21/02433 ,  H01L21/02529 ,  H01L29/045 ,  H01L29/0657 ,  H01L29/1608

摘要： A silicon carbide semiconductor substrate includes a first main surface and a second main surface opposite to the first main surface. The first main surface has a maximum diameter of more than 100 mm, and the silicon carbide semiconductor substrate has a thickness of not more than 700 μm. A dislocation density is not more than 500/mm2 at an arbitrary region having an area of 1 mm2 in a region within 5 mm from an outer circumferential end portion of the first main surface toward a center of the first main surface. Accordingly, there is provided a silicon carbide semiconductor substrate allowing for suppression of generation of cracks.

摘要翻译： 碳化硅半导体衬底包括与第一主表面相对的第一主表面和第二主表面。 第一主表面的最大直径大于100mm，碳化硅半导体衬底的厚度不大于700μm。 在距离第一主表面的外周端部朝向第一主表面的中心的5mm以内的区域中，在面积为1mm2的任意区域，位错密度不大于500 / mm2。 因此，提供了能够抑制裂纹的产生的碳化硅半导体基板。

公开(公告)号：US20190081505A1

公开(公告)日：2019-03-14

申请号：US15743102

申请日：2016-06-23

申请人： Sumitomo Electric Industries, Ltd.

发明人： Tetsuo Akita ,  Koichi Takeshita ,  Naoki Ayai ,  Tomohiro Yamaguchi

IPC分类号： H02J9/06 ,  H02M7/797 ,  G01R19/165

CPC分类号： H02J9/06 ,  G01R19/16547 ,  H02J7/022 ,  H02M7/797

摘要： This power supply unit includes: an AC path from an input end to an output end; a first voltage sensor configured to detect an input voltage at the input end; a second voltage sensor configured to detect an output voltage at the output end; a bidirectional inverter connected to the AC path; a storage battery connected to the AC path via the bidirectional inverter; an AC switch provided between the input end and a point at which the bidirectional inverter is connected to the AC path; and a control unit configured such that, in a state in which the AC switch is controlled to be opened, if current conduction via the AC switch is detected on the basis of an operation state of the bidirectional inverter, the input voltage, and the output voltage, the control unit determines that the AC switch has failed, and stops the bidirectional inverter.

公开(公告)号：US20170040100A1

公开(公告)日：2017-02-09

申请号：US15304353

申请日：2015-04-14

申请人： AutoNetworks Technologies, Ltd. ,  Sumitomo Wiring Systems, Ltd. ,  Sumitomo Electric Industries, Ltd.

发明人： Tatsuo Hirabayashi ,  Kouji Nishi ,  Susumu Fukuyama

IPC分类号： H01F27/255 ,  H01F27/34 ,  H01F27/28

CPC分类号： H01F27/255 ,  H01F3/10 ,  H01F27/263 ,  H01F27/266 ,  H01F27/2823 ,  H01F27/34 ,  H01F37/00 ,  H01F2027/348

摘要： The present invention provides a core piece and a reactor that have excellent bondability to a resin portion and are capable of reducing the generation of eddy currents. The core piece is a core piece that constitutes a magnetic core disposed within or outside a coil formed of a wound wire, the core piece including an end surface that is orthogonal to a magnetic flux flowing through the coil and to which a resin portion is bonded, wherein the end surface has an intersecting groove in which a plurality of grooves intersect without forming a loop. The core piece may be, for example, a powder compact made of metal particles and an insulating material present between the metal particles. The core piece may constitute, for example, a portion of the magnetic core, the portion being disposed within the coil.

摘要翻译： 本发明提供一种与树脂部分具有优异的粘合性并且能够减少涡流的产生的芯片和反应器。 芯片是芯片，其构成设置在由卷绕线形成的线圈的内部或外部的磁芯，该芯片包括与流过线圈的磁通正交的端面，并且树脂部分被接合 其特征在于，所述端面具有交叉槽，多个槽相交而不形成环。 芯片可以是例如由金属颗粒制成的粉末压块和存在于金属颗粒之间的绝缘材料。 芯片可以构成例如磁芯的一部分，该部分设置在线圈内。

公开(公告)号：US20190006680A1

公开(公告)日：2019-01-03

申请号：US15742939

申请日：2016-07-15

申请人： SUMITOMO ELECTRIC INDUSTRIES, LTD.

发明人： Naho MIZUHARA ,  Masatoshi MAJIMA ,  Hiromasa TAWARAYAMA ,  Chihiro HIRAIWA ,  Takahiro HIGASHINO ,  Yohei NODA ,  Kazunari MIYAMOTO

IPC分类号： H01M4/86 ,  H01M8/1246 ,  H01M4/90 ,  H01M8/04082

摘要： In an SOFC, a solid electrolyte layer and an anode are integrated with each other to provide an electrolyte layer-anode assembly. The anode contains a nickel element and a first proton conductor. The first proton conductor is composed of a first perovskite oxide having proton conductivity. The first perovskite oxide has an AXO3-type crystal structure, the A-site containing Ba, the X-site containing Y and at least one selected from the group consisting of Zr and Ce. The nickel element is at least partially in the form of NiO. The anode has a porosity Pa of 10% or more by volume when INi/INiO≤0.1, where INi/INiO denotes a relative intensity ratio of the peak intensity INi of metallic Ni to the peak intensity INiO of the NiO in an XRD spectrum of the anode.