公开(公告)号：US09508422B2

公开(公告)日：2016-11-29

申请号：US14983802

申请日：2015-12-30

申请人： Kabushiki Kaisha Toshiba ,  SanDisk Corporation

发明人： Tomoharu Tanaka ,  Jian Chen

IPC分类号： G11C7/10 ,  G11C11/56 ,  G11C16/04 ,  G11C16/12 ,  G11C16/34 ,  H01L27/115 ,  G11C16/10

CPC分类号： G11C11/5628 ,  G11C11/5642 ,  G11C16/0483 ,  G11C16/10 ,  G11C16/12 ,  G11C16/34 ,  G11C16/3418 ,  G11C16/3427 ,  G11C16/3459 ,  G11C16/3481 ,  G11C2211/5621 ,  H01L27/115 ,  H01L27/11521 ,  H01L27/11524

摘要： A non-volatile semiconductor memory device includes an electrically data rewritable non-volatile semiconductor memory cell and a write circuit for writing data in the memory cell, the write circuit writing a data in the memory cells by supplying a write voltage Vpgm and a write control voltage VBL to the memory cell, continuing the writing of the data in the memory cell by changing the value of the write control voltage VBL in response to an advent of a first write state of the memory cell and inhibiting any operation of writing a data to the memory cell by further changing the value of the write control voltage VBL to Vdd in response to an advent of a second write state of the memory cell.

公开(公告)号：US09214525B2

公开(公告)日：2015-12-15

申请号：US14164065

申请日：2014-01-24

申请人： SanDisk Corporation

发明人： Jian Chen

IPC分类号： H01L29/423 ,  B82Y10/00 ,  G11C11/56 ,  G11C16/04 ,  G11C16/10 ,  H01L21/28 ,  H01L29/51 ,  H01L29/66

CPC分类号： H01L29/42324 ,  B82Y10/00 ,  G11C11/5621 ,  G11C11/5671 ,  G11C16/04 ,  G11C16/10 ,  H01L21/28273 ,  H01L21/28282 ,  H01L29/42332 ,  H01L29/42348 ,  H01L29/512 ,  H01L29/513 ,  H01L29/517 ,  H01L29/66825 ,  H01L29/66833

摘要： Methods and apparatuses for electronic devices such as non-volatile memory devices are described. The memory devices include a multi-layer control dielectric, such as a double or triple layer. The multi-layer control dielectric includes a combination of high-k dielectric materials such as aluminum oxide, hafnium oxide, and/or hybrid films of hafnium aluminum oxide. The multi-layer control dielectric provides enhanced characteristics, including increased charge retention, enhanced memory program/erase window, improved reliability and stability, with feasibility for single or multi state (e.g., two, three or four bit) operation.

摘要翻译： 描述诸如非易失性存储器件的电子设备的方法和装置。 存储器件包括多层控制电介质，例如双层或三层。 多层控制电介质包括高k电介质材料如氧化铝，氧化铪和/或铪铝氧化物的混合膜的组合。 多层控制电介质提供增强的特性，包括增加的电荷保留，增强的存储器程序/擦除窗口，改善的可靠性和稳定性，具有单一或多状态（例如，两个，三个或四个位）操作的可行性。

公开(公告)号：US20140206182A1

公开(公告)日：2014-07-24

申请号：US14251092

申请日：2014-04-11

申请人： SanDisk Corporation

发明人： Jian Chen ,  Karen Chu Cruden ,  Xiangfeng Duan ,  Chao Liu ,  J. Wallace Parce

IPC分类号： H01L21/28

CPC分类号： H01L21/28008 ,  B82Y10/00 ,  B82Y30/00 ,  B82Y40/00 ,  H01L21/28229 ,  H01L21/28273 ,  H01L21/3105 ,  Y10S977/774 ,  Y10S977/782 ,  Y10S977/845 ,  Y10S977/855 ,  Y10S977/89 ,  Y10S977/891

摘要： Methods are provided for forming a nanostructure array. An example method includes providing a first layer, providing nanostructures dispersed in a solution comprising a liquid form of a spin-on-dielectric, wherein the nanostructures comprise a silsesquioxane ligand coating, disposing the solution on the first layer, whereby the nanostructures form a monolayer array on the first layer, and curing the liquid form of the spin-on-dielectric to provide a solid form of the spin-on-dielectric. Numerous other aspects are provided.

摘要翻译： 提供了形成纳米结构阵列的方法。 一个示例性方法包括提供第一层，提供分散在包括液体形式的旋涂电介质的溶液中的纳米结构，其中纳米结构包括倍半硅氧烷配体涂层，将溶液设置在第一层上，由此纳米结构形成单层 阵列在第一层上，并且固化旋转电介质的液体形式以提供固体形式的旋涂电介质。 提供了许多其他方面。

公开(公告)号：US20140183613A1

公开(公告)日：2014-07-03

申请号：US14164065

申请日：2014-01-24

申请人： SanDisk Corporation

发明人： Jian Chen

IPC分类号： H01L29/423 ,  H01L29/51

CPC分类号： H01L29/42324 ,  B82Y10/00 ,  G11C11/5621 ,  G11C11/5671 ,  G11C16/04 ,  G11C16/10 ,  H01L21/28273 ,  H01L21/28282 ,  H01L29/42332 ,  H01L29/42348 ,  H01L29/512 ,  H01L29/513 ,  H01L29/517 ,  H01L29/66825 ,  H01L29/66833

摘要： Methods and apparatuses for electronic devices such as non-volatile memory devices are described. The memory devices include a multi-layer control dielectric, such as a double or triple layer. The multi-layer control dielectric includes a combination of high-k dielectric materials such as aluminum oxide, hafnium oxide, and/or hybrid films of hafnium aluminum oxide. The multi-layer control dielectric provides enhanced characteristics, including increased charge retention, enhanced memory program/erase window, improved reliability and stability, with feasibility for single or multi state (e.g., two, three or four bit) operation.

摘要翻译： 描述诸如非易失性存储器件的电子设备的方法和装置。 存储器件包括多层控制电介质，例如双层或三层。 多层控制电介质包括高k电介质材料如氧化铝，氧化铪和/或铪铝氧化物的混合膜的组合。 多层控制电介质提供增强的特性，包括增加的电荷保留，增强的存储器程序/擦除窗口，改善的可靠性和稳定性，具有单一或多状态（例如，两个，三个或四个位）操作的可行性。

公开(公告)号：US08735226B2

公开(公告)日：2014-05-27

申请号：US13956483

申请日：2013-08-01

申请人： SanDisk 3D LLC

发明人： Jian Chen ,  Karen Chu Cruden ,  Xiangfeng Duan ,  Chao Liu ,  J. Wallace Parce

IPC分类号： H01L21/31 ,  H01L21/3105 ,  H01L21/28

CPC分类号： H01L21/28008 ,  B82Y10/00 ,  B82Y30/00 ,  B82Y40/00 ,  H01L21/28229 ,  H01L21/28273 ,  H01L21/3105 ,  Y10S977/774 ,  Y10S977/782 ,  Y10S977/845 ,  Y10S977/855 ,  Y10S977/89 ,  Y10S977/891

摘要： Methods for forming or patterning nanostructure arrays are provided. The methods involve formation of arrays on coatings comprising nanostructure association groups, formation of arrays in spin-on-dielectrics, solvent annealing after nanostructure deposition, patterning using resist, and/or use of devices that facilitate array formation. Related devices for forming nanostructure arrays are also provided, as are devices including nanostructure arrays (e.g., memory devices).

摘要翻译： 提供了形成或构图纳米结构阵列的方法。 所述方法包括在包含纳米结构缔合基团，自旋电介质中阵列形成，纳米结构沉积后的溶剂退火，使用抗蚀剂图案化和/或使用促进阵列形成的器件的涂层上形成阵列。 还提供了用于形成纳米结构阵列的相关器件，以及包括纳米结构阵列（例如，存储器件）的器件。

公开(公告)号：US08386678B2

公开(公告)日：2013-02-26

申请号：US13008813

申请日：2011-01-18

申请人： Yoram Cedar ,  Micky Holtzman ,  Yosi Pinto

发明人： Yoram Cedar ,  Micky Holtzman ,  Yosi Pinto

IPC分类号： G06F13/00

CPC分类号： G06F13/1694 ,  G06F12/0653 ,  G06F12/0661 ,  G06F13/385 ,  G06F13/387 ,  G06F13/4239 ,  G06F2212/2022 ,  G06F2213/0052

摘要： A data storage device includes one or more electrical contacts and one or more data paths through the electrical contacts. The one or more electrical contacts enable bits to be transferred into and out of the data storage device via the one or more data paths. The data storage device also includes a memory that stores an indication of a number of the one or more data paths. The data storage device is configured to provide the indication via at least one of the one or more data paths while the data storage device is operatively coupled to a host device to indicate to the host device the number of the one or more data paths.

摘要翻译： 数据存储装置包括一个或多个电触点和穿过电触点的一个或多个数据路径。 一个或多个电触点允许位经由一个或多个数据路径被传送到数据存储设备中和从数据存储设备传出。 数据存储设备还包括存储一个或多个数据路径的数量的指示的存储器。 所述数据存储设备被配置为经由所述一个或多个数据路径中的至少一个提供所述指示，同时所述数据存储设备可操作地耦合到主机设备以向所述主机设备指示所述一个或多个数据路径的数量。

公开(公告)号：US20120256247A1

公开(公告)日：2012-10-11

申请号：US13083775

申请日：2011-04-11

申请人： Johann Alsmeier

发明人： Johann Alsmeier

IPC分类号： H01L29/788 ,  H01L21/336

CPC分类号： H01L27/11556 ,  H01L21/764 ,  H01L27/11582 ,  H01L29/7889 ,  H01L29/7926

摘要： Monolithic three dimensional NAND strings and methods of making. The method includes both front side and back side processing. Using the combination of front side and back side processing, a NAND string can be formed that includes an air gap between the floating gates in the NAND string. The NAND string may be formed with a single vertical channel. Alternatively, the NAND string may have a U shape with two vertical channels connected with a horizontal channel.

摘要翻译： 单片三维NAND串和制作方法。 该方法包括正面和背面处理。 使用前侧和背面处理的组合，可以形成NAND串，其包括NAND串中的浮动栅极之间的气隙。 NAND串可以形成有单个垂直通道。 或者，NAND串可以具有U形，其中两个垂直通道与水平通道连接。

公开(公告)号：US08223547B2

公开(公告)日：2012-07-17

申请号：US13027055

申请日：2011-02-14

申请人： Kevin M. Conley ,  John S. Mangan ,  Jeffrey G. Craig

发明人： Kevin M. Conley ,  John S. Mangan ,  Jeffrey G. Craig

IPC分类号： G11C16/04

CPC分类号： G11C16/107 ,  G06F12/0246 ,  G06F2212/7203 ,  G06F2212/7207 ,  G06F2212/7208 ,  G11C16/10 ,  G11C16/3459 ,  G11C29/82 ,  G11C2216/14

摘要： A non-volatile memory system is formed of floating gate memory cells arranged in blocks as the smallest unit of memory cells that are erasable together. The system includes a number of features that may be implemented individually or in various cooperative combinations. One feature is the storage in separate blocks of the characteristics of a large number of blocks of cells in which user data is stored. These characteristics for user data blocks being accessed may, during operation of the memory system by its controller, be stored in a random access memory for ease of access and updating. According to another feature, multiple sectors of user data are stored at one time by alternately streaming chunks of data from the sectors to multiple memory blocks. Bytes of data in the stream may be shifted to avoid defective locations in the memory such as bad columns. Error correction codes may also be generated from the streaming data with a single generation circuit for the multiple sectors of data. The stream of data may further be transformed in order to tend to even out the wear among the blocks of memory. Yet another feature, for memory systems having multiple memory integrated circuit chips, provides a single system record that includes the capacity of each of the chips and assigned contiguous logical address ranges of user data blocks within the chips which the memory controller accesses when addressing a block, making it easier to manufacture a memory system with memory chips having different capacities. A typical form of the memory system is as a card that is removably connectable with a host system but may alternatively be implemented in a memory embedded in a host system. The memory cells may be operated with multiple states in order to store more than one bit of data per cell.

摘要翻译： 非易失性存储器系统由以块为单位布置的浮动栅极存储单元形成为可以一起可擦除的最小单元的存储器单元。 该系统包括可以单独地或以各种协作组合实现的多个特征。 一个特征是在单独的块中存储其中存储用户数据的大量小区块的特性。 正在访问的用户数据块的这些特征可以在存储器系统由其控制器操作期间被存储在随机存取存储器中以便于访问和更新。 根据另一特征，通过将来自扇区的数据块交替地流向多个存储块，一次存储多个扇区的用户数据。 可以移动流中的数据字节以避免存储器中的不良位置，例如不良列。 也可以通过用于多扇区数据的单一生成电路从流数据生成纠错码。 可以进一步转换数据流，以便趋向于均匀地消除存储器块之间的磨损。 对于具有多个存储器集成电路芯片的存储器系统，又一特征提供了单个系统记录，该系统记录包括每个芯片的容量，并且在寻址块时存储器控制器访问的芯片内分配的用户数据块的连续逻辑地址范围 ，使得容易制造具有不同容量的存储器芯片的存储器系统。 存储器系统的典型形式是可拆卸地与主机系统连接的卡，但是也可以在嵌入在主机系统中的存储器中实现。 存储器单元可以以多种状态操作，以便存储每个单元的多于一位的数据。

公开(公告)号：US20120110417A1

公开(公告)日：2012-05-03

申请号：US12913120

申请日：2010-10-27

申请人： Manuel Antonio D' Abreu ,  Stephen Skala

发明人： Manuel Antonio D' Abreu ,  Stephen Skala

IPC分类号： H03M13/05 ,  G06F11/10

CPC分类号： G06F11/1012

摘要： A method in a memory device includes receiving data including a data block and main error correction coding (ECC) data for the data block. The data block includes a first sub-block of data and first ECC data corresponding to the first sub-block. An ECC operation is initiated to process the data block using the main ECC data. In response to the ECC operation indicating uncorrectable errors in the data, a first sub-block ECC operation is initiated to process the first sub-block of data using the first ECC data.

摘要翻译： 存储装置中的方法包括接收数据块的数据块和主纠错编码（ECC）数据的数据。 数据块包括数据的第一子块和对应于第一子块的第一ECC数据。 启动ECC操作以使用主ECC数据来处理数据块。 响应于指示数据中的不可校正错误的ECC操作，启动第一子块ECC操作以使用第一ECC数据处理第一子数据块。

公开(公告)号：US08001325B2

公开(公告)日：2011-08-16

申请号：US10754483

申请日：2004-01-09

申请人： Kevin Conley ,  Robert Chang ,  Wes G. Brewer ,  Eric Bone ,  Yoram Cedar

发明人： Kevin Conley ,  Robert Chang ,  Wes G. Brewer ,  Eric Bone ,  Yoram Cedar

IPC分类号： G06F12/00 ,  G06F13/00 ,  G06F13/28

CPC分类号： G06F3/0643 ,  G06F3/0619 ,  G06F3/0679

摘要： A removable data storage device that intelligently operates as one large data storage region or as multiple, smaller data storage regions is disclosed. The removable data storage device can be used in not only modern electronic products (using 32-bit addressing) but also legacy products (using 16-bit addressing). A host device can couple to the removable storage device to access data stored in/to the removable storage device. As an example, the removable data storage device can be a memory card.

摘要翻译： 公开了一种可移动数据存储设备，其智能地操作为一个大数据存储区域或多个较小的数据存储区域。 可移动数据存储设备不仅可以用于现代电子产品（使用32位寻址），还可以用于传统产品（使用16位寻址）。 主机设备可以耦合到可移动存储设备以访问存储在/移动存储设备中的数据。 作为示例，可移动数据存储设备可以是存储卡。