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公开(公告)号：US20240234623A9
公开(公告)日：2024-07-11
申请号：US18279579
申请日：2022-02-16
发明人： Keitaro TSUCHIYA , Masato YAMADA
CPC分类号： H01L33/0075 , H01L33/0093 , H01L33/06 , H01L33/32
摘要： The present invention is a method for manufacturing an epitaxial wafer for an ultraviolet ray emission device, the method including steps of: preparing a supporting substrate having at least one surface composed of gallium nitride; forming a bonding layer on the surface composed of the gallium nitride of the supporting substrate; forming a laminated substrate having a seed crystal layer by laminating a seed crystal composed of an AlxGa1-xN (0.5
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公开(公告)号：US20240136466A1
公开(公告)日：2024-04-25
申请号：US18279579
申请日：2022-02-16
发明人： Keitaro TSUCHIYA , Masato YAMADA
CPC分类号： H01L33/0075 , H01L33/0093 , H01L33/06 , H01L33/32
摘要： The present invention is a method for manufacturing an epitaxial wafer for an ultraviolet ray emission device, the method including steps of: preparing a supporting substrate having at least one surface composed of gallium nitride; forming a bonding layer on the surface composed of the gallium nitride of the supporting substrate; forming a laminated substrate having a seed crystal layer by laminating a seed crystal composed of an AlxGa1-xN (0.5
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公开(公告)号：US20240347668A1
公开(公告)日：2024-10-17
申请号：US18683042
申请日：2022-08-01
发明人： Junya ISHIZAKI
CPC分类号： H01L33/0093 , H01L33/0075 , H01L33/32 , H01L33/36 , H01L2933/0016
摘要： A temporarily bonded wafer in which an epitaxial functional layer having two or more electrodes with different polarities on one surface and a support substrate are temporarily bonded, in which the surface having the electrodes of the epitaxial functional layer and the support substrate are temporarily bonded via an uncured thermosetting bonding material. A resulting technique reduces bonding failure and delamination failure after removing the substrate after a bonding process, improves the yield, and easily removes the temporary support substrate.
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公开(公告)号：US20240313086A1
公开(公告)日：2024-09-19
申请号：US18579009
申请日：2022-06-27
发明人： Kazunori HAGIMOTO
IPC分类号： H01L29/66 , H01L21/02 , H01L29/20 , H01L29/778
CPC分类号： H01L29/66462 , H01L21/02351 , H01L21/02381 , H01L21/0243 , H01L21/02458 , H01L21/0254 , H01L29/2003 , H01L29/7786
摘要： The present invention is a substrate for a semiconductor device, including: a high-resistant silicon single crystal substrate having a resistivity of 100 Ω·cm or more; a first buffer layer composed of an AlN layer and formed on the high-resistant silicon single crystal substrate; and a nitride semiconductor layer provided on the first buffer layer, wherein there is no low-resistivity portion on a top surface of the high-resistant silicon single crystal substrate, the low-resistivity portion having a resistivity relatively lower than the resistivity of an entirety of the high-resistant silicon single crystal substrate. This provides: a substrate for a semiconductor device that can impart good electric characteristics to a device; and a simple method for manufacturing such a substrate.
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公开(公告)号：US12084788B2
公开(公告)日：2024-09-10
申请号：US17794039
申请日：2020-12-01
发明人： Kosei Sugawara , Ryoji Hoshi , Tomohiko Ohta
摘要： A method for producing a silicon single crystal, wherein a silicon nitride powder is introduced into a raw material before start of melting and the silicon single crystal doped with nitrogen is pulled by Czochralski method, wherein nitrogen doping is performed while an upper limit amount of usable silicon nitride powder is limited based on an amount of carbon impurities contained in the silicon nitride powder so that a carbon concentration in the silicon single crystal is equal to or less than allowable value. This makes it possible to achieve the required nitrogen doping amount at low cost while achieving the low carbon-concentration specification.
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公开(公告)号：US20240141552A1
公开(公告)日：2024-05-02
申请号：US18279023
申请日：2022-03-04
发明人： Yoshihiro KUBOTA , Ippei KUBONO
IPC分类号： C30B25/18 , C23C16/30 , C23C16/34 , C23C16/40 , C23C16/50 , C30B29/40 , C30B31/22 , H01L21/02 , H01L29/20
CPC分类号： C30B25/186 , C23C16/301 , C23C16/308 , C23C16/345 , C23C16/402 , C23C16/50 , C30B29/403 , C30B31/22 , H01L21/02645 , H01L29/2003
摘要： A seed substrate for epitaxial growth has a support substrate, a planarizing layer of 0.5 to 3 μm provided on the top surface of the support substrate, and a seed crystal layer provided on the top surface of the planarizing layer. The support substrate includes a core of group III nitride polycrystalline ceramics and a 0.05 to 1.5 μm encapsulating layer that encapsulates the core. The seed crystal layer is provided by thin-film transfer of 0.1 to 1.5 μm of the surface layer of Si single crystal with oxidation-induced stacking faults (OSF) of 10 defects/cm2 or less. High-quality, inexpensive seed substrates with few crystal defects for epitaxial growth of epitaxial substrates and solid substrates of group III nitrides such as AlN, AlxGa1-xN (0
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公开(公告)号：US11959191B2
公开(公告)日：2024-04-16
申请号：US17601112
申请日：2020-02-05
发明人： Wei Feng Qu , Shizuo Igawa
IPC分类号： C30B29/06 , C30B33/02 , H01L21/322
CPC分类号： C30B29/06 , C30B33/02 , H01L21/322
摘要： A method for manufacturing a silicon single crystal wafer for a multilayer structure device including: using a silicon single crystal wafer with oxygen concentration of 12 ppma (JEITA) or higher and composing an NV region; and performing an RTA treatment in a nitrogen-containing atmosphere and a temperature of 1225° C. or higher, a mirror-polish processing treatment, and a BMD-forming heat treatment manufacturing a silicon single crystal wafer having at least a DZ layer with a thickness of 5 to 12.5 μm and a BMD layer positioned immediately below the DZ layer and a BMD density of 1×1011/cm3 or higher from the silicon single crystal wafer surface. During device formation, the silicon wafer surface stress is absorbed immediately below a surface layer, distortion defects are absorbed by the BMD layer, device formation region strength is enhanced, and surface layer dislocation occurrence and extension is suppressed.
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公开(公告)号：US20240079412A1
公开(公告)日：2024-03-07
申请号：US18272620
申请日：2022-01-17
IPC分类号： H01L27/12 , H01L21/02 , H01L21/76 , H01L21/762 , H01L29/20
CPC分类号： H01L27/1203 , H01L21/02458 , H01L21/0254 , H01L21/0262 , H01L21/7605 , H01L21/76251 , H01L29/2003
摘要： A nitride semiconductor substrate, including a Ga-containing nitride semiconductor thin film formed on a substrate for film-forming in which a single crystal silicon layer is formed above a supporting substrate via an insulative layer, wherein the nitride semiconductor substrate has a region where the Ga-containing nitride semiconductor thin film is not formed inward from an edge of the single crystal silicon layer being a growth surface of the nitride semiconductor thin film. This provides: a nitride semiconductor substrate with inhibited generation of a reaction mark; and a manufacturing method therefor.
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公开(公告)号：US11898078B2
公开(公告)日：2024-02-13
申请号：US16762963
申请日：2018-10-11
CPC分类号： C09K11/706 , C09K11/0883 , H01L33/00 , C30B25/183 , C30B29/40
摘要： A semiconductor phosphor configured to exhibit photoluminescence upon irradiation with excitation light, including: at least one active layer made of a compound semiconductor and containing an n-type or p-type dopant; and at least two barrier layers made of a compound semiconductor and having a larger band gap than the active layer. The active layer and the barrier layers are alternately stacked. This provides a semiconductor phosphor which allows easy wavelength adjustment, high efficiency and stability.
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公开(公告)号：US11878329B2
公开(公告)日：2024-01-23
申请号：US16637012
申请日：2018-07-31
发明人： Kensaku Igarashi , Tatsuo Abe
CPC分类号： B08B3/08 , H01L21/02052 , B08B2203/005
摘要： A method for cleaning a silicon wafer includes the steps of: supplying hydrofluoric acid onto a surface of the silicon wafer to treat the silicon wafer while rotating at a first rotational rate, stopping the supply of the hydrofluoric acid and shaking off hydrofluoric acid on the surface of the silicon wafer without supplying pure water onto the surface of the silicon wafer while rotating the silicon wafer at a second rotational rate which is the same as or faster than the first rotational rate, and supplying ozone water onto the surface of the silicon wafer to treat the silicon wafer after shaking the hydrofluoric acid off the surface while rotating at a third rotational rate which is faster than the second rotational rate. This method for cleaning a silicon wafer is capable of suppressing adhesion of water marks and particles and enhancing the wafer quality.
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