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148 条记录 (耗时 0.031 秒)

    Hybrid corrective processing system and method
    1.
    发明授权
    Hybrid corrective processing system and method 有权

    公开(公告)号：US10971411B2

    公开(公告)日：2021-04-06

    申请号：US16154025

    申请日：2018-10-08

    申请人： TEL Epion Inc.

    发明人： Joshua LaRose ,  Brian D. Pfeifer ,  Vincent Lagana-Gizzo ,  Noel Russell

    IPC分类号： H01J37/32 ,  H01L21/66 ,  H01L21/3065 ,  G05B19/418

    摘要： A system and method for performing corrective processing of a workpiece is described. The system and method includes receiving a first set of parametric data from a first source that diagnostically relates to at least a first portion of a microelectronic workpiece, and receiving a second set of parametric data from a second source different than the first source that diagnostically relates to at least a second portion of the microelectronic workpiece. Thereafter, a corrective process is generated, and a target region of the microelectronic workpiece is processed by applying the corrective process to the target region using a combination of the first set of parametric data and the second set of parametric data.

    Gas cluster ion beam etch profile control using beam divergence
    2.
    发明授权
    Gas cluster ion beam etch profile control using beam divergence 有权
    使用光束发散的气体簇离子束蚀刻轮廓控制

    公开(公告)号：US08691700B2

    公开(公告)日：2014-04-08

    申请号：US13223977

    申请日：2011-09-01

    申请人： John J. Hautala ,  Michael Graf

    发明人： John J. Hautala ,  Michael Graf

    IPC分类号： H01L21/302

    CPC分类号： H01L21/31122 ,  H01J2237/24528 ,  H01L21/32136

    摘要： A method of etching a substrate is described. In one embodiment, the method includes preparing a mask layer having a pattern formed therein on or above at least a portion of a substrate, etching a feature pattern into the substrate from the pattern in the mask layer using a gas cluster ion beam (GCIB), and controlling a sidewall profile of the feature pattern etched into the substrate by adjusting a beam divergence of the GCIB.

    摘要翻译： 描述蚀刻衬底的方法。 在一个实施方案中，该方法包括制备其中在基底的至少一部分上或之上形成的图案的掩模层，使用气体簇离子束（GCIB）从掩模层中的图案将特征图案蚀刻到衬底中， 并且通过调整GCIB的光束发散度来控制蚀刻到衬底中的特征图案的侧壁轮廓。

    Surface profile adjustment using gas cluster ion beam processing
    3.
    发明授权
    Surface profile adjustment using gas cluster ion beam processing 有权
    使用气体簇离子束处理进行表面轮廓调整

    公开(公告)号：US08691103B2

    公开(公告)日：2014-04-08

    申请号：US13678972

    申请日：2012-11-16

    申请人： TEL Epion Inc.

    发明人： John J. Hautala

    IPC分类号： B44C1/22 ,  C03C15/00 ,  C03C25/68 ,  C23F1/00

    CPC分类号： B44C1/227 ,  H01J2237/0812 ,  H01L21/02019

    摘要： A method of treating a workpiece is described. The method comprises computing correction data from metrology data related to a workpiece surface profile, adjusting the surface profile in accordance with the correction data using a gas cluster ion beam (GCIB), and further adjusting the surface profile by performing an etching process following the GCIB adjustment.

    摘要翻译： 描述了一种处理工件的方法。 该方法包括从与工件表面轮廓有关的计量数据中计算校正数据，使用气体簇离子束（GCIB）根据校正数据调整表面轮廓，并且通过执行GCIB之后的蚀刻工艺来进一步调节表面轮廓 调整。

    Gas cluster ion beam system with rapid gas switching apparatus
    6.
    发明授权
    Gas cluster ion beam system with rapid gas switching apparatus 有权
    具有快速气体开关装置的气体簇离子束系统

    公开(公告)号：US08338806B2

    公开(公告)日：2012-12-25

    申请号：US12774051

    申请日：2010-05-05

    申请人： Michael Graf ,  Robert K. Becker ,  Christopher T. Reddy ,  Noel Russell

    发明人： Michael Graf ,  Robert K. Becker ,  Christopher T. Reddy ,  Noel Russell

    IPC分类号： A61N5/00

    CPC分类号： H01J37/08 ,  H01J27/026 ,  H01J37/3171 ,  H01J2237/006 ,  H01J2237/0812

    摘要： A processing system is provided for irradiating a substrate with a gas cluster ion beam (GCIB). The system includes a nozzle for forming and emitting gas cluster beams through a nozzle outlet, and a stagnation chamber that is located upstream of and adjacent the nozzle. The stagnation chamber has an inlet, and the nozzle is configured to direct a single gas cluster beam toward the substrate. An ionizer is positioned downstream of the outlet and is configured to ionize the gas cluster beam to form the GCIB. The system also includes a gas supply that is in fluid communication with the inlet of the stagnation chamber, and which includes a gas source and a valve located between the gas source and the nozzle for controlling flow of a gas between the gas source and the nozzle.

    摘要翻译： 提供了用气体簇离子束（GCIB）照射衬底的处理系统。 该系统包括用于通过喷嘴出口形成和发射气体束的喷嘴，以及位于喷嘴的上游和邻近喷嘴的停滞室。 停滞室具有入口，并且喷嘴构造成将单个气体束束引向基板。 离子发生器位于出口的下游，并被配置为电离气体簇束以形成GCIB。 该系统还包括与停滞室的入口流体连通的气体源，其包括气体源和位于气体源和喷嘴之间的阀，用于控制气体源和喷嘴之间的气体流动 。

    GCIB PROCESS FOR REDUCING INTERFACIAL ROUGHNESS FOLLOWING PRE-AMORPHIZATION
    7.
    发明申请
    GCIB PROCESS FOR REDUCING INTERFACIAL ROUGHNESS FOLLOWING PRE-AMORPHIZATION 失效
    用于减少预处理后的界面粗糙度的GCIB工艺

    公开(公告)号：US20120252222A1

    公开(公告)日：2012-10-04

    申请号：US13073540

    申请日：2011-03-28

    申请人： John Gumpher

    发明人： John Gumpher

    IPC分类号： H01L21/26 ,  H01L21/3105

    CPC分类号： H01L21/26566 ,  H01L21/26506 ,  H01L21/26513 ,  H01L21/2658

    摘要： A method for amorphizing a layer on a substrate is described. In one embodiment, the method includes treating the substrate with a first gas cluster ion beam (GCIB) using a first beam energy selected to yield an amorphous sub-layer within the substrate of a desired thickness, which produces a first interfacial roughness of an amorphous-crystal interface between the amorphous sub-layer and a crystalline sub-layer of the substrate. The method further includes treating the substrate with a second GCIB using a second beam energy, less than the first beam energy, to reduce the first interfacial roughness of the amorphous-crystal interface to a second interfacial roughness.

    摘要翻译： 描述了在基板上非晶化层的方法。 在一个实施方案中，该方法包括使用选择的第一束能量利用第一气体团簇离子束（GCIB）处理衬底，以产生所需厚度的衬底内的无定形子层，其产生无定形的第一界面粗糙度 非晶子层和基底的结晶子层之间的晶体界面。 该方法还包括使用小于第一光束能量的第二光束能量利用第二GCIB处理衬底，以将非晶 - 晶界面的第一界面粗糙度减小到第二界面粗糙度。

    GAS CLUSTER ION BEAM SYSTEM WITH RAPID GAS SWITCHING APPARATUS
    9.
    发明申请
    GAS CLUSTER ION BEAM SYSTEM WITH RAPID GAS SWITCHING APPARATUS 有权
    具有快速气体切换装置的气体离子束系统

    公开(公告)号：US20110272594A1

    公开(公告)日：2011-11-10

    申请号：US12774051

    申请日：2010-05-05

    申请人： Michael Graf ,  Robert K. Becker ,  Christopher T. Reddy ,  Noel Russell

    发明人： Michael Graf ,  Robert K. Becker ,  Christopher T. Reddy ,  Noel Russell

    IPC分类号： H01J37/30 ,  H01J37/02

    CPC分类号： H01J37/08 ,  H01J27/026 ,  H01J37/3171 ,  H01J2237/006 ,  H01J2237/0812

    摘要： A processing system is provided for irradiating a substrate with a gas cluster ion beam (GCIB). The system includes a nozzle for forming and emitting gas cluster beams through a nozzle outlet, and a stagnation chamber that is located upstream of and adjacent the nozzle. The stagnation chamber has an inlet, and the nozzle is configured to direct a single gas cluster beam toward the substrate. An ionizer is positioned downstream of the outlet and is configured to ionize the gas cluster beam to form the GCIB. The system also includes a gas supply that is in fluid communication with the inlet of the stagnation chamber, and which includes a gas source and a valve located between the gas source and the nozzle for controlling flow of a gas between the gas source and the nozzle.

    摘要翻译： 提供了用气体簇离子束（GCIB）照射衬底的处理系统。 该系统包括用于通过喷嘴出口形成和发射气体束的喷嘴，以及位于喷嘴的上游和邻近喷嘴的停滞室。 停滞室具有入口，并且喷嘴构造成将单个气体束束引向基板。 离子发生器位于出口的下游，并被配置为电离气体簇束以形成GCIB。 该系统还包括与停滞室的入口流体连通的气体源，其包括气体源和位于气体源和喷嘴之间的阀，用于控制气体源和喷嘴之间的气体流动 。