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公开(公告)号：US20240021410A1
公开(公告)日：2024-01-18
申请号：US17865225
申请日：2022-07-14
IPC分类号： H01J37/32
CPC分类号： H01J37/32183 , H01J37/32128 , H01J37/32146 , H01J37/32541 , H01J37/3299 , H01J2237/24564
摘要： A plasma system includes a plasma apparatus including: a plasma chamber; a pedestal configured to hold a substrate in the chamber; and a radio frequency (RF) electrode configured to excite plasma in the chamber; an electromagnetic (EM) circuit block coupled to the RF electrode, the EM circuit block including: a function generator configured to output a broadband RF waveform, the waveform having EM power distributed over a range of frequencies; a broadband amplifier coupled to an output of the function generator, an operating frequency range of the amplifier including the range of frequencies; and a broadband impedance matching network having an input coupled to an output of the broadband amplifier and an output coupled to a terminal of the RF electrode, an operating frequency range of the broadband impedance matching network including the range of frequencies; and a controller configured to adjust an input parameter of the EM circuit block.
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公开(公告)号：US20240363405A1
公开(公告)日：2024-10-31
申请号：US18634671
申请日：2024-04-12
发明人： Masato SAKAMOTO , Tadahiro ISHIZAKA
IPC分类号： H01L21/768 , C23C16/02 , C23C16/06 , C23C16/52 , H01J37/32
CPC分类号： H01L21/76862 , C23C16/0227 , C23C16/06 , C23C16/52 , H01J37/32137 , H01J37/32449 , H01J37/32568 , H01L21/7685 , H01L21/76867 , H01L21/76877 , H01J2237/335
摘要： Provided is a substrate processing method for processing a substrate including a metal layer, the method comprising: supplying a halogen-containing gas to the substrate and reducing a metal oxide film formed on a surface of the metal layer; and supplying a reducing gas to the substrate and decreasing a residue remaining on the metal layer by supplying the halogen-containing gas.
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公开(公告)号：US20240363391A1
公开(公告)日：2024-10-31
申请号：US18770734
申请日：2024-07-12
发明人： Kazuya IKEUE
IPC分类号： H01L21/687 , H01L21/67
CPC分类号： H01L21/68735 , H01L21/67051 , H01L21/67259 , H01L21/68764
摘要： A processing apparatus configured to process a substrate includes a substrate holder having a substrate holding surface configured to attract and hold the substrate thereon; and an edge cleaning device configured to clean an edge portion of the substrate holding surface. Further, a processing method of processing a rear surface of the substrate by using the processing apparatus includes processing the rear surface of the substrate while a front surface of the substrate is attracted to and held by a substrate holding surface of a substrate holder; and cleaning an edge portion of the substrate holding surface.
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公开(公告)号：US12131937B2
公开(公告)日：2024-10-29
申请号：US17680296
申请日：2022-02-25
IPC分类号： B25J11/00 , B25J9/16 , B25J13/08 , H01J37/32 , H01L21/68 , H01L21/687 , B25J15/00 , H01L21/67
CPC分类号： H01L21/681 , B25J9/1697 , B25J11/0095 , B25J13/08 , H01J37/32642 , H01J37/32807 , H01L21/68707 , B25J15/0014 , G05B2219/36433 , G05B2219/39001 , H01L21/67173
摘要： According to an aspect of the present disclosure, there is provided a transfer system comprising a transfer robot configured to transfer a transfer target object by an end effector based on an operation instruction, and a controller configured to output the operation instruction to the transfer robot, wherein at least any one of the end effector and the transfer target object has at least any one of a sensor and a camera, the controller calculates a relative position between the end effector and the transfer target object based on at least any one of a detected result of the sensor and a captured result of the camera, and the controller determines a teaching position of the end effector with respect to the transfer target object based on the relative position, and outputs the operation instruction to the transfer robot such that the end effector is disposed at the teaching position.
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公开(公告)号：US12131914B2
公开(公告)日：2024-10-29
申请号：US17521958
申请日：2021-11-09
发明人： Du Zhang , Hojin Kim , Shigeru Tahara , Kaoru Maekawa , Mingmei Wang , Jacques Faguet , Remi Dussart , Thomas Tillocher , Philippe Lefaucheux , Gaëlle Antoun
IPC分类号： H01L21/311 , H01L21/02
CPC分类号： H01L21/31116 , H01L21/0212 , H01L21/02274 , H01L21/0228
摘要： A method for processing a substrate that includes: loading the substrate in a plasma processing chamber; performing a cyclic plasma etch process including a plurality of cycles, where each cycle of the plurality of cycles includes: generating a first plasma from a first gas mixture including a fluorosilane and oxygen; performing a deposition step by exposing the substrate to the first plasma to form a passivation film including silicon and fluorine; generating a second plasma from a second gas mixture including a noble gas; and performing an etch step by exposing the substrate to the second plasma.
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公开(公告)号：US12131888B2
公开(公告)日：2024-10-29
申请号：US17008314
申请日：2020-08-31
发明人： Peter Ventzek , Alok Ranjan
IPC分类号： H01J37/32 , H01L21/3065 , H01L21/311 , H01L21/67
CPC分类号： H01J37/32449 , H01J37/32091 , H01J37/321 , H01J37/3244 , H01L21/3065 , H01L21/31116 , H01L21/31144 , H01L21/67069 , H01J2237/334
摘要： A method for processing a substrate includes forming a patterned layer over the substrate, the layer including an opening, where a surface of the opening includes a sidewall and a bottom wall. The method includes processing the patterned layer with an anisotropic process by generating a flux of gas clusters over the substrate in a first process chamber, where the gas clusters include radical precursors; exposing the substrate to the flux of gas clusters. The method includes sustaining plasma including ions in a second process chamber; and exposing the substrate to the ions by directing the ions toward the bottom wall of the opening.
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公开(公告)号：US12128550B2
公开(公告)日：2024-10-29
申请号：US17761361
申请日：2020-09-11
CPC分类号： B25J15/0625 , B25J9/1679 , B25J9/1694 , B25J11/0095 , B25J21/00
摘要： A vacuum transfer device, which is arranged between a process chamber and a load lock chamber and transfers a substrate between the process chamber and the load lock chamber, includes a container, a transfer device, an exhaust device, a dew-point meter, and a control device. The container is connected to each of the process chamber and the load lock chamber via a gate valve. The transfer device is provided inside the container and transfers the substrate between the process chamber and the load lock chamber. The exhaust device exhausts a gas in the container. The dew-point meter measures a dew-point temperature of the gas in the container. The control device determines whether a process is ready to be executed, based on the dew-point temperature measured by the dew-point meter, and when the process is ready to be executed, notifies that fact to a user of the vacuum transfer device.
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公开(公告)号：US20240355669A1
公开(公告)日：2024-10-24
申请号：US18689484
申请日：2022-08-26
发明人： Yasutaka MIZOMOTO , Yohei YAMASHITA
IPC分类号： H01L21/762 , H01L21/306 , H01L21/67
CPC分类号： H01L21/76243 , H01L21/30625 , H01L21/67092 , H01L21/76254
摘要： A substrate processing method of processing a combined substrate in which a first substrate and a second substrate are bonded to each other is provided. A device layer including multiple devices is formed on a front surface side of the first substrate. The substrate processing method includes forming a light leakage prevention layer by radiating first laser light to an oxygen-containing film formed between the device layer and a position where a modification layer serving as a starting point for separation of the first substrate is formed; forming the modification layer by radiating second laser light to an inside of the first substrate after the forming of the light leakage prevention layer; and separating the first substrate starting from the modification layer to thin the first substrate.
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公开(公告)号：US20240355590A1
公开(公告)日：2024-10-24
申请号：US18757613
申请日：2024-06-28
发明人： Takayuki KATSUNUMA , Masanobu HONDA
IPC分类号： H01J37/32
CPC分类号： H01J37/32449 , H01J2237/3321 , H01J2237/3346
摘要： A substrate processing method includes preparing a substrate. The substrate includes a first region and a second region providing an opening on the first region. The substrate processing method further includes forming a top deposit on a top of the second region by using a first plasma generated from a first gas. The substrate processing method further includes forming a first film on a surface of the top deposit and a sidewall surface defining the opening, the first film having a thickness decreasing along a depth direction of the opening.
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10.发明授权公开(公告)号：US12125818B2
公开(公告)日：2024-10-22
申请号：US17669236
申请日：2022-02-10
发明人： Jack Rogers , Satohiko Hoshino , Nathan Antonovich
CPC分类号： H01L24/80 , H01L24/08 , H01L2224/08145 , H01L2224/80013 , H01L2224/8002 , H01L2224/80895 , H01L2224/80896 , H01L2924/0509
摘要： Technologies for plasma oxidation protection during hybrid bonding of semiconductor devices includes forming a blocking layer on a metallic bonding pad formed in a bonding surface of a semiconductor device to be bonded and performing a surface treatment on the bonding surface to increase the bonding strength of the bonding surface and contemporaneously remove the blocking layer from the metallic bonding pad. In an illustrative embodiment, the blocking layer is embodied as a self-assembled monolayer (SAM), and the surface treatment is embodied as a surface activation plasma (SAP) treatment. A diffusion barrier layer, such as a silicon carbon nitride layer, may form the bonding surface in some embodiments to reduce diffusion of the metallic bonding pad during an annealing treatment of the bonding process.
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