摘要:
A method of forming semiconductor assemblies is disclosed. The method includes providing an interposer with through interposer vias. The interposer includes a first surface and a second surface. The through interposer vias extend from the first surface to the second surface of the interposer. A first die is mounted on the first surface of the interposer. The first die comprises a first surface with first conductive contacts thereon. The interposer comprises material with coefficient of thermal expansion (CTE) similar to that of the first die. The first conductive contacts of the first die are coupled to the through interposer vias on the first surface of the interposer.
摘要:
Semiconductor packages and methods for forming a semiconductor package are presented. The semiconductor package includes a package substrate having a die region on a first surface thereof. The package includes a die having a sensing element. The die is disposed in the die region and is electrically coupled to contact pads disposed on the first surface of the package substrate by insulated wire bonds. A cap is disposed over the first surface of the package substrate. The cap and the first surface of the package substrate define an inner cavity which accommodates the die and the insulated wire bonds. The insulated wire bonds are directly exposed to an environment through at least one access port of the package.
摘要:
A structural member for use in semiconductor packaging is disclosed. The structural member includes a plurality of packaging regions to facilitate packaging dies in, for example, a wafer format. A packaging region has a die attach region surrounded by a peripheral region. A die is attached to the die attach region. In one aspect, the die attach region has opening through the surfaces of the structural member for accommodating a die. Through-vias disposed are in the peripheral regions. The structural member reduces warpage that can occur during curing of the mold compound used in encapsulating the dies. In another aspect, the die attach region does not have an opening. In such cases, the structural member serves as an interposer between the die and a substrate.
摘要:
A chip package includes a carrier having a first and a second major surface. The first major surface includes an active region surrounded by an inactive region. The chip package includes contact pads in the active region for mating with chip contacts of a chip. A support structure is disposed on the inactive region of the first major surface. The support structure forms a dam that surrounds the active region. When a chip or chip stack is mounted in the active region, spacing exists between the dam and the chip or chip stack. The spacing creates convention paths for heat dissipation.
摘要:
A SIM card is presented. The SIM card includes a support carrier having a first and a second major surface. The support carrier includes a cavity which extends partially into the carrier from the first major surface. The SIM card further includes a chip package disposed within the cavity. The support carrier is sufficiently flexible to bend when the SIM card is being inserted into or removed from a SIM card holder.
摘要:
A chip package includes a carrier having a first and a second major surface. The first major surface includes an active region surrounded by an inactive region. The chip package includes contact pads in the active region for mating with chip contacts of a chip. A support structure is disposed on the inactive region of the first major surface. The support structure forms a dam that surrounds the active region. When a chip or chip stack is mounted in the active region, spacing exists between the dam and the chip or chip stack. The spacing creates convention paths for heat dissipation.
摘要:
A method of manufacturing a plurality of stacked die semiconductor packages, including: placing a phase change material between a top surface of a substrate and a bottom surface of a first die; placing a phase change material between a top surface of the first die and a bottom surface of a second die; wherein the first and second dies have a plurality of conductive protrusions on the bottom surfaces of the dies; wherein the first die has a plurality of conductive vias extending from its conductive protrusions, through the first die, to the top surface of the first die; wherein the conductive vias of said first die are in alignment with the conductive protrusions of the second die; and heating the dies and the substrate to cause the second die to become electrically interconnected to the first die and the first die to become electrically connected to the substrate.
摘要:
A stiffener is provided for use in making semiconductor devices. The stiffener and method of use provided prevent or reduce warpage of a semiconductor package during the assembly process. More particularly, the stiffener functions to prevent or reduce warpage during molding of an assembly of wafers and/or dies. The stiffener may be positioned above the backside or non-active side of an assembly of wafer and/or dies during molding. The presence of the stiffener prevents or reduces warpage caused by CTE mismatch between the mold material and the wafer and/or under the high temperatures encountered in the process of molding. After molding, the stiffener may continue to provide support to the assembly.
摘要:
A method of forming a device is disclosed. The method includes providing a printed circuit board substrate having a die attach region on a first surface of the substrate. The method also includes attaching a die to a die attach region. The die is electrically coupled to first land pads disposed on the first surface at the periphery of the die attach region. A cap is formed in a target area by a top gate process to produce a cap with an even surface. The cap covers the die and leaves at least the first land pads exposed.
摘要:
A semiconductor package and a method for constructing the package are disclosed. The package includes a substrate and a die attached thereto. A first contact region is disposed on the substrate and a second contact region is disposed on the die. The first contact region, for example, comprises copper coated with an OSP material. A copper wire bond electrically couples the first and second contact regions. Wire bonding includes forming a ball bump on the first contact region having a flat top surface. Providing the flat top surface is achieved with a smoothing process. A ball bond is formed on the second contact region, followed by stitching the wire onto the flat top surface of the ball bump on the first contact region.