摘要:
Methods of forming semiconductor devices may be provided. A method of forming a semiconductor device may include patterning first and second material layers to form a first through region exposing a substrate. The method may include forming a first semiconductor layer in the first through region on the substrate and on sidewalls of the first and second material layers. In some embodiments, the method may include forming a buried layer filling the first through region on the first semiconductor layer. In some embodiments, the method may include removing a portion of the buried layer to form a second through region between the sidewalls of the first and second material layers. Moreover, the method may include forming a second semiconductor layer in the second through region.
摘要:
A method by an electronic device for controlling a frequency response of audio output includes: receiving an audio signal at the device; estimating a sound pressure level of the audio signal based on one or more attributes or settings of the electronic device and/or the audio signal; generating values of an adaptive loudness control curve along a range of frequencies, wherein the adaptive loudness control curve is generated based on a difference between values of an equal loudness curve at the estimated sound pressure level along and values of an equal loudness curve at a reference sound pressure level; filtering the audio signal using values of the adaptive loudness control curve; and controlling output of the filtered audio signal as an audio output having substantially the same loudness along the range of frequencies.
摘要:
A nonvolatile memory device has improved reliability by compensating a threshold voltage of a flash memory cell. A nonvolatile memory device includes a memory cell array and a voltage generator for supplying a select read voltage to a select word line and an unselect read voltage to unselected word lines when a read operation is performed, and supplying a verify voltage to a select word line and the unselect read voltage to unselected word lines when a program operation is performed. The voltage generator supplies a first unselect read voltage to at least one between an upper word line and a lower word line adjacent to the select word line when the program operation is performed, and supplies a second unselected read voltage to at least one between the upper word line and the lower word line adjacent to the select word line when the read operation is performed.
摘要:
A nonvolatile memory device, which has an improved read reliability through a refresh operation, and a memory system, are provided. The nonvolatile memory device includes a resistive memory cell, a reference resistor corresponding to the resistive memory cell, a reference sense amplifier electrically connected to the reference resistor and configured to change a transition time of an output value of the reference resistor, and a refresh request signal generator configured to output the refresh request signal for the resistive memory cell when the transition time of an output value of the reference resistor is in a preset refresh requiring period.
摘要:
A scenario is simulated by providing an agent that is an object in the scenario, providing a time window for the scenario that spans the farthest reachable past time and the farthest reachable future time with respect to a present time for the agent and/or at least one player that interacts with the simulated scenario, providing at least one event that represents a change in at least one attribute of the agent, and updating a state of the scenario by applying the at least one event to the agent within the time window.
摘要:
Provided is a semiconductor device. The semiconductor device includes a conductive pattern disposed on a semiconductor substrate. First and second conductive lines disposed on the conductive pattern and located at the same level as each other, are provided. An isolation pattern is disposed between the first and second conductive lines. A first vertical structure passing through the first conductive line and conductive pattern is provided. A second vertical structure passing through the second conductive line and conductive patterns is provided. An auxiliary pattern passing through the conductive pattern and in contact with the isolation pattern is provided.
摘要:
A non-volatile memory device includes a data storage structure coupled between first and second conductive lines of the memory device. The data storage structure includes a conductive lower heater element, a data storage pattern, and a conductive upper heater element sequentially stacked. At least one sidewall surface of the data storage pattern is coplanar with a sidewall surface of the upper heater element thereabove and a sidewall surface of the lower heater element therebelow. Related fabrication methods are also discussed.
摘要:
A memory system includes a central processing unit (CPU), a nonvolatile memory electrically coupled to the CPU and a main memory, which is configured to swap an incoming code page for a target code page therein, in response to a first command issued by the CPU. The main memory can be configured to swap the target code page in the main memory to the nonvolatile memory in the event a page capacity of the main memory is at a threshold capacity. The CPU may also be configured to perform a frequency of use analysis on the target code page to determine whether the target code page is to be swapped to the nonvolatile memory or discarded. The incoming code page may be provided by a disk drive storage device and the main memory may be a volatile memory.
摘要:
A method of fabricating a thermoelectric device includes providing a substrate having a plurality of inclined growth surfaces protruding from a surface thereof. Respective thermoelectric material layers are grown on the inclined growth surfaces, and the respective thermoelectric material layers coalesce to collectively define a continuous thermoelectric film. A surface of the thermoelectric film opposite the surface of the substrate may be substantially planar, and a crystallographic orientation of the thermoelectric film may be tilted at an angle of about 45 degrees or less relative to a direction along a thickness thereof. Related devices and fabrication methods are also discussed.