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1326 条记录 (耗时 0.028 秒)

    System and method for scalable asset tracking
    1.
    发明授权
    System and method for scalable asset tracking 有权

    公开(公告)号：US12111407B2

    公开(公告)日：2024-10-08

    申请号：US17024874

    申请日：2020-09-18

    申请人： Silicon Laboratories Inc.

    发明人： Lauri Mikael Hintsala

    IPC分类号： G01S5/02 ,  G01S5/00 ,  G01S5/08 ,  H04L1/08 ,  H04W4/80 ,  H04W56/00 ,  H04W72/0446

    CPC分类号： G01S5/0215 ,  G01S5/0018 ,  G01S5/021 ,  G01S5/08 ,  H04L1/08 ,  H04W56/001 ,  H04W72/0446 ,  H04W4/80

    摘要： A system having a locator device and a plurality of tag devices is disclosed. The locator device comprises an antenna array allowing it to determine an angle of arrival for incoming signals from each of the plurality of tag devices. The system also defines a sequence of time slots, where each time slot has a specific function. The sequence may start with a locator time slot, where the locator device transmits a packet that informs all of the tag devices that this is the start of the sequence. A sync slot follows the locator time slot, where new tag devices may transmit a sync request to the locator device. Upon receipt of a sync request, the locator device assigns the new tag device a tag slot. Following the sync slot are a plurality of tag slots, where each tag device transmits an AoA packet during its assigned tag slot.

    System and method for introducing aluminum to an ion source
    4.
    发明授权
    System and method for introducing aluminum to an ion source 有权

    公开(公告)号：US11996281B1

    公开(公告)日：2024-05-28

    申请号：US18206910

    申请日：2023-06-07

    申请人： Applied Materials, Inc.

    发明人： Graham Wright ,  Ori Noked ,  Craig R. Chaney ,  Adam M. McLaughlin

    IPC分类号： H01J7/02 ,  H01J1/20 ,  H01J7/24

    CPC分类号： H01J7/02 ,  H01J1/20 ,  H01J7/24

    摘要： An ion source that may be used to introduce a dopant material into the arc chamber is disclosed. A component containing the dopant material is disposed in the path of an etching gas, which also enters the arc chamber. In some embodiments, the dopant material is in liquid form, and the etching gas travels through the liquid. In other embodiments, the dopant material is a solid material. In some embodiments, the solid material is formed as a porous structure, such that the etching gas flows through the solid material. In other embodiments, one or more components of the ion source are manufactured using a material that includes the dopant material, such that the etching gas etches the component to release the dopant material.

    Electronic system
    5.
    发明授权
    Electronic system 有权

    公开(公告)号：US11986588B2

    公开(公告)日：2024-05-21

    申请号：US17082417

    申请日：2020-10-28

    申请人： Presspart GmbH & Co. KG

    发明人： Victor Torres ,  Benjamin Jung

    IPC分类号： A61M15/00 ,  H04Q9/00

    CPC分类号： A61M15/0068 ,  A61M15/0021 ,  A61M15/009 ,  H04Q9/00 ,  A61M2202/064 ,  A61M2205/3334 ,  A61M2205/3584 ,  A61M2205/581 ,  A61M2205/582 ,  A61M2205/583 ,  H04Q2209/40

    摘要： Electronic system including an inhaler device for dispensing a medicament formulation in aerosol or dry powder form and an external device which is configured to receive data communicated from the inhaler device. The inhaler device includes a mouthpiece and a flow rate sensor for sensing a flow rate of an inhalation flow which is caused by a patient upon inhalation through the mouthpiece and in which the medicament formulation is entrained or dispensed. The inhaler device further comprises an actuation sensing device having at least one actuation sensor which is configured to sense preparatory steps of the inhaler device in order to prepare a use of the inhaler device and/or to sense the actuation of the inhaler device in order to dispense the medicament formulation. The actuation sensor and the flow rate sensor are configured to generate sensor signals.

    Receiver with duty cycled listening
    6.
    发明授权
    Receiver with duty cycled listening 有权

    公开(公告)号：US11962325B2

    公开(公告)日：2024-04-16

    申请号：US17873844

    申请日：2022-07-26

    申请人： Silicon Laboratories Inc.

    发明人： Hendricus de Ruijter

    IPC分类号： H03M13/00 ,  H03M13/11

    CPC分类号： H03M13/116

    摘要： A system and method for detecting the preamble of a wireless packet is disclosed. The system utilizes one or more received fragments as inputs to a correlator, forming correlator content inside the correlator memory. After every sample from the received fragment is provided to the correlator, the correlator then compares the correlator content to a known pattern pre-programmed as a set of correlation coefficients. The correlation coefficients may not align with the correlator content because the symbol boundaries are not known a-priori. By cyclic rotation of the correlation coefficients relative to the correlator content, or cyclic rotation of the correlator content relative to the known correlation coefficients, a match with one or more preamble symbols may be found. This technique may be used to reduce power during the preamble detection process. Alternatively, this technique can also be used for antenna diversity, multi PHY and multichannel applications.

    III-nitride transistor with a modified drain access region
    9.
    发明授权
    III-nitride transistor with a modified drain access region 有权

    公开(公告)号：US11876130B2

    公开(公告)日：2024-01-16

    申请号：US17109593

    申请日：2020-12-02

    申请人： Cambridge Electronics, Inc.

    发明人： Bin Lu ,  Dongfei Pei ,  Xiabing Lou

    IPC分类号： H01L29/78 ,  H01L29/66 ,  H01L29/20

    CPC分类号： H01L29/7802 ,  H01L29/2003 ,  H01L29/66712

    摘要： This disclosure describes the structure and technology to modify the free electron density between the gate and drain electrodes of III-nitride semiconductor transistors. Electron density reduction regions (EDR regions) are disposed between the gate and the drain of the transistor structure. In certain embodiments, the EDR regions are created using trenches. In other embodiments, the EDR regions are created by implanting the regions with a species that reduces the free electrons in the channel layer. In another embodiment, the EDR regions are created by forming a cap layer over the barrier layer, wherein the cap layer reduces the free electrons in the channel beneath the cap layer. In another embodiment, a cap layer may be formed in the EDR regions, and doped regions may be created outside of the EDR regions, wherein the impurities act as electron donors.

    Crucible design for liquid metal in an ion source
    10.
    发明授权
    Crucible design for liquid metal in an ion source 有权

    公开(公告)号：US11854760B2

    公开(公告)日：2023-12-26

    申请号：US17353171

    申请日：2021-06-21

    申请人： Applied Materials, Inc.

    发明人： Graham Wright ,  Eric Donald Wilson ,  Daniel Alvarado ,  Robert C. Lindberg ,  Jacob Mullin

    IPC分类号： H01J27/02 ,  H01J27/14

    CPC分类号： H01J27/022 ,  H01J27/14

    摘要： A crucible that exploits the observation that molten metal tends to flow toward the hottest regions is disclosed. The crucible includes an interior in which dopant material may be disposed. The crucible has a pathway leading from the interior toward an aperture, wherein the temperature is continuously increasing along the pathway. The aperture may be disposed in or near the interior of the arc chamber of an ion source. The liquid metal flows along the pathway toward the arc chamber, where it is vaporized and then ionized. By controlling the flow rate of the pathway, spillage may be reduced. In another embodiment, an inverted crucible is disclosed. The inverted crucible comprises a closed end in communication with the interior of the ion source, so that the closed end is the hottest region of the crucible. An opening is disposed on a different wall to allow vapor to exit the crucible.