公开(公告)号：US12211808B2

公开(公告)日：2025-01-28

申请号：US18343606

申请日：2023-06-28

Applicant: STATS ChipPAC Pte. Ltd.

Inventor： HunTeak Lee ,  Choon Heung Lee ,  JunHo Ye

IPC: H01L23/66 ,  H01L21/48 ,  H01L21/56 ,  H01L23/31 ,  H01L23/538 ,  H01L23/552 ,  H01Q1/22

Abstract: A semiconductor device has an electrical component assembly, and a plurality of discrete antenna modules disposed over the electrical component assembly. Each discrete antenna module is capable of providing RF communication for the electrical component assembly. RF communication can be enabled for a first one of the discrete antenna modules, while RF communication is disabled for a second one of the discrete antenna modules. Alternatively, RF communication is enabled for the second one of the discrete antenna modules, while RF communication is disabled for the first one of the discrete antenna modules. A bump is formed over the discrete antenna modules. An encapsulant is deposited around the discrete antenna modules. A shielding layer is formed over the electrical components assembly. A stud or core ball can be formed internal to a bump connecting the discrete antenna modules to the electrical component assembly.

公开(公告)号：US12211804B2

公开(公告)日：2025-01-28

申请号：US18429080

申请日：2024-01-31

Applicant: STATS ChipPAC Pte. Ltd.

Inventor： ChangOh Kim ,  KyoWang Koo ,  SungWon Cho ,  BongWoo Choi ,  JiWon Lee

IPC: H01L23/552 ,  H01L21/56 ,  H01L21/60 ,  H01L23/00 ,  H01L23/28 ,  H01L23/66 ,  H01L25/00

Abstract: A semiconductor device has a substrate. A first component and second component are disposed over the substrate. The first component includes an antenna. A lid is disposed over the substrate between the first component and second component. An encapsulant is deposited over the substrate and lid. A conductive layer is formed over the encapsulant and in contact with the lid. A first portion of the conductive layer over the first component is removed using laser ablation.

公开(公告)号：US12166001B2

公开(公告)日：2024-12-10

申请号：US17450474

申请日：2021-10-11

Applicant: Semtech Corporation

Inventor： Kok Khoon Ho ,  Jonathan Clark ,  John MacLeod

IPC: H01L21/683 ,  H01L21/02 ,  H01L21/56 ,  H01L21/78 ,  H01L23/00 ,  H01L23/31 ,  H01L23/498 ,  H01L21/60

Abstract: A semiconductor device includes a semiconductor wafer. A plurality of pillar bumps is formed over the semiconductor wafer. A solder is deposited over the pillar bumps. The semiconductor wafer is singulated into a plurality of semiconductor die after forming the pillar bumps while the semiconductor wafer is on a carrier. An encapsulant is deposited around the semiconductor die and pillar bumps while the semiconductor die remains on the carrier. The encapsulant covers an active surface of the semiconductor die between the pillar bumps.

公开(公告)号：US12107028B2

公开(公告)日：2024-10-01

申请号：US18305913

申请日：2023-04-24

Applicant: STATS ChipPAC Pte. Ltd.

Inventor： KyungOe Kim ,  Wagno Alves Braganca, Jr. ,  DongSam Park

IPC: H01L23/367 ,  H01L21/48 ,  H01L21/56 ,  H01L23/00 ,  H01L23/31 ,  H01L23/498

CPC classification number: H01L23/367 ,  H01L21/4853 ,  H01L21/4857 ,  H01L21/4871 ,  H01L21/565 ,  H01L23/3185 ,  H01L23/49816 ,  H01L23/49822 ,  H01L24/16 ,  H01L2224/16227 ,  H01L2924/15311 ,  H01L2924/18161

Abstract: A semiconductor device has a heat spreader with an opening formed through the heat spreader. The heat spreader is disposed over a substrate with a semiconductor die disposed on the substrate in the opening. A thermally conductive material, e.g., adhesive or an elastomer plug, is disposed in the opening between the heat spreader and semiconductor die. A conductive layer is formed over the substrate, heat spreader, and thermally conductive material.

公开(公告)号：US12009314B2

公开(公告)日：2024-06-11

申请号：US17819271

申请日：2022-08-11

Applicant: STATS ChipPAC Pte. Ltd.

Inventor： YoungCheol Kim ,  ChoonHeung Lee ,  WonGyou Kim

IPC: H01L23/552 ,  H01L21/48 ,  H01L21/56 ,  H01L23/00 ,  H01L23/31 ,  H01L23/49 ,  H01L23/498

CPC classification number: H01L23/552 ,  H01L21/4853 ,  H01L21/4889 ,  H01L21/565 ,  H01L23/3121 ,  H01L23/49 ,  H01L23/49838 ,  H01L24/16 ,  H01L2224/16227 ,  H01L2924/3025

Abstract: A semiconductor device has a substrate and a plurality of bond wires is disposed in a pattern across on the substrate. The pattern of bond wires can be a plurality of rows of bond wires. A plurality of electrical components is disposed over the substrate as an SIP module. An encapsulant is deposited over the substrate, electrical components, and bond wire. An opening is formed in the encapsulant extending to the bond wire. The opening can be a trench extending across the bond wires disposed on the substrate, or a plurality of openings individually exposing each of a plurality of bond wires. A conductive material is disposed in the opening. A shielding layer is formed over the encapsulant and in contact with the conductive material. The shielding layer, conductive material, and bond wires reduce the effects of EMI, RFI, and other inter-device interference.

公开(公告)号：US11994801B2

公开(公告)日：2024-05-28

申请号：US17319785

申请日：2021-05-13

Applicant: STATS ChipPAC Pte. Ltd.

Inventor： Giwoong Nam ,  Junghwan Jang ,  Inhee Hwang ,  Taekyu Choi ,  Sanghyun Park

IPC: G03F7/16 ,  B05C11/06 ,  H01L21/02

CPC classification number: G03F7/168 ,  B05C11/06 ,  G03F7/162 ,  G03F7/164 ,  H01L21/0209

Abstract: A semiconductor manufacturing device has an outer cup and inner cup with a wafer suction mount disposed within the outer cup. A photoresist material is applied to a first surface of a semiconductor wafer disposed on the wafer suction mount while rotating at a first speed. A gas port is disposed on the inner cup for dispensing a gas oriented toward a bottom side of the semiconductor wafer. The gas port purges a second surface of the semiconductor wafer with a gas to remove contamination. The second surface of the semiconductor wafer is rinsed while purging with the gas. The gas can be a stable or inert gas, such as nitrogen. The contamination is removed from the second surface of the semiconductor wafer through an outlet between the inner cup and outer cup. The semiconductor wafer rotates at a second greater speed after discontinuing purge with the gas.

公开(公告)号：US11923260B2

公开(公告)日：2024-03-05

申请号：US18154993

申请日：2023-01-16

Applicant: STATS ChipPAC Pte. Ltd.

Inventor： JinHee Jung ,  ChangOh Kim

IPC: H01L23/31 ,  H01L21/56 ,  H01L23/60 ,  H01L23/66

CPC classification number: H01L23/31 ,  H01L21/565 ,  H01L23/60 ,  H01L23/66

Abstract: A semiconductor device has an electronic component assembly with a substrate and a plurality of electrical components disposed over the substrate. A conductive post is formed over the substrate. A molding compound sheet is disposed over the electrical component assembly. A carrier including a first electrical circuit pattern is disposed over the molding compound sheet. The carrier is pressed against the molding compound sheet to dispose a first encapsulant over and around the electrical component assembly and embed the first electrical circuit pattern in the first encapsulant. A shielding layer can be formed over the electrical components assembly. The carrier is removed to expose the first electrical circuit pattern. A second encapsulant is deposited over the first encapsulant and the first electrical circuit pattern. A second electrical circuit pattern is formed over the second encapsulant. A semiconductor package is disposed over the first electrical circuit pattern.

公开(公告)号：US11862572B2

公开(公告)日：2024-01-02

申请号：US18161693

申请日：2023-01-30

Applicant: STATS ChipPAC Pte. Ltd.

Inventor： ChangOh Kim ,  KyoungHee Park ,  SeongHwan Park ,  JinHee Jung

IPC: H01L23/552 ,  H01L23/66 ,  H01L21/56 ,  H01L23/31 ,  H01L21/48 ,  H01Q1/22

CPC classification number: H01L23/552 ,  H01L21/486 ,  H01L21/56 ,  H01L23/31 ,  H01L23/66 ,  H01Q1/2283

Abstract: A semiconductor device has a first package layer. A first shielding layer is formed over the first package layer. The first shielding layer is patterned to form a redistribution layer. An electrical component is disposed over the redistribution layer. An encapsulant is deposited over the electrical component. A second shielding layer is formed over the encapsulant. The second shielding layer is patterned. The patterning of the first shielding layer and second shielding layer can be done with a laser. The second shielding layer can be patterned to form an antenna.

公开(公告)号：US11842991B2

公开(公告)日：2023-12-12

申请号：US16990887

申请日：2020-08-11

Applicant: STATS ChipPAC Pte. Ltd.

Inventor： DeokKyung Yang ,  OhHan Kim ,  HeeSoo Lee ,  HunTeak Lee ,  InSang Yoon ,  Il Kwon Shim

IPC: H01L25/00 ,  H01L23/00 ,  H01L21/56 ,  H01L23/552 ,  H01L25/065 ,  H01L25/16 ,  H01L23/498 ,  H01L23/31 ,  H01L23/538 ,  H01L23/50

CPC classification number: H01L25/50 ,  H01L21/56 ,  H01L21/561 ,  H01L23/552 ,  H01L24/17 ,  H01L24/83 ,  H01L25/0652 ,  H01L25/16 ,  H01L23/3128 ,  H01L23/49816 ,  H01L23/50 ,  H01L23/5385 ,  H01L24/16 ,  H01L24/81 ,  H01L24/97 ,  H01L2224/0401 ,  H01L2224/05111 ,  H01L2224/05124 ,  H01L2224/05139 ,  H01L2224/05144 ,  H01L2224/05147 ,  H01L2224/05155 ,  H01L2224/1146 ,  H01L2224/11334 ,  H01L2224/13023 ,  H01L2224/13111 ,  H01L2224/13113 ,  H01L2224/13116 ,  H01L2224/13124 ,  H01L2224/13139 ,  H01L2224/13144 ,  H01L2224/13147 ,  H01L2224/13155 ,  H01L2224/16235 ,  H01L2224/16237 ,  H01L2224/16238 ,  H01L2224/48091 ,  H01L2224/48179 ,  H01L2224/73265 ,  H01L2224/81815 ,  H01L2224/97 ,  H01L2924/15151 ,  H01L2924/15311 ,  H01L2924/19105 ,  H01L2924/19106 ,  H01L2924/3025 ,  H01L2224/97 ,  H01L2224/81

Abstract: A semiconductor device has a first substrate and a second substrate. An opening is formed through the second substrate. A first semiconductor component and second semiconductor component are disposed between the first substrate and second substrate. The second substrate is electrically coupled to the first substrate through the first semiconductor component. A first terminal of the first semiconductor component is electrically coupled to the first substrate. A second terminal of the first semiconductor component is electrically coupled to the second substrate. The second semiconductor component extends into the opening. An encapsulant is deposited over the first substrate and second substrate.

公开(公告)号：US11830785B2

公开(公告)日：2023-11-28

申请号：US17450146

申请日：2021-10-06

Applicant: STATS ChipPAC Pte. Ltd.

Inventor： TaeKeun Lee ,  Youngmin Kim ,  Yongmin Kim

IPC: H01L23/367 ,  H01L25/065 ,  H01L25/10 ,  H01L25/00

CPC classification number: H01L23/3675 ,  H01L25/0655 ,  H01L25/105 ,  H01L25/50

Abstract: A semiconductor device has a substrate and a first semiconductor die disposed over the substrate. A subpackage is also disposed over the substrate. A stiffener is disposed over the substrate around the first semiconductor die and subpackage. A heat spreader is disposed over the stiffener. The heat spreader is thermally coupled to the first semiconductor die. The heat spreader has an opening over the subpackage.