公开(公告)号：US11298420B2

公开(公告)日：2022-04-12

申请号：US15843603

申请日：2017-12-15

申请人： Memgen, LLC

发明人： Mark J. Cantwell

IPC分类号： A61K39/42 ,  A61K38/17 ,  C07K14/705 ,  A61P35/00 ,  A61K39/00

摘要： Disclosed are oncolytic viruses comprising chimeric human/mouse CD40 ligands. The chimeric human/mouse CD40 ligand may be MEM40. The oncolytic virus may be replication competent. The oncolytic virus may be an oncolytic herpes simplex virus. Also disclosed are methods comprising administering an oncolytic virus armed with at least one chimeric human/mouse CD40 ligand, for example MEM40, to a patient suffering from cancer.

公开(公告)号：US11238980B2

公开(公告)日：2022-02-01

申请号：US15934025

申请日：2018-03-23

申请人： Galen Data, Inc.

发明人： Abbasi N. Dhilawala ,  Christopher G. Dupont

IPC分类号： G16H40/60 ,  G16H10/60 ,  G16H40/20 ,  G16H80/00 ,  G16H30/00 ,  G16H15/00

摘要： Systems and methods for automated generation of medical device communication software, cloud-based storage of medical device data including an electronic medical device (EMD) application communication interface and a central communication interface, and user interface software to allow a user device to receive EMD data transmitted from a data storage medium (DSM) and transmit data to the DSM for transmission to the EMD, that meets one or more medical device standards set by government or industry regulatory bodies.

公开(公告)号：US11114736B2

公开(公告)日：2021-09-07

申请号：US16835303

申请日：2020-03-31

申请人： GLOBALFOUNDRIES INC.

发明人： See Taur Lee ,  Sher Jiung Fang ,  Abdellatif Bellaouar

IPC分类号： H03K5/01 ,  H01P5/12 ,  H03K17/687 ,  H03F3/24 ,  H01P11/00 ,  H03K5/00

摘要： Power combiners having increased output power, such as may be useful in millimeter-wave devices. The power combiner comprise at least two channels, wherein each channel comprises a phase alignment circuit, wherein the phase alignment circuit comprises a first differential input subcircuit comprising a first inverter and a second inverter, and a second differential input subcircuit comprising a third inverter and a fourth inverter, wherein the first inverter, the second inverter, the third inverter, and the fourth inverter each comprise a PMOS transistor and an NMOS transistor each having an adjustable back gate bias voltage. By adjusting the back gate bias voltage, the phases of the signal through each channel may be aligned, which may increase the output power of the power combiner. Methods of increasing output power of such power combiners. Systems for manufacturing devices comprising such power combiners.

公开(公告)号：USD927946S1

公开(公告)日：2021-08-17

申请号：US29705512

申请日：2019-09-12

申请人： Jiangmen Xinhui Yinghua Hardware Co., Ltd.

设计人： Chi Leong Lam

公开(公告)号：US10924058B2

公开(公告)日：2021-02-16

申请号：US16801667

申请日：2020-02-26

申请人： GLOBALFOUNDRIES INC.

发明人： Abdellatif Bellaouar ,  Arul Balasubramaniyan

IPC分类号： H03B1/02 ,  H01P5/16 ,  H03H11/36 ,  H03B5/12 ,  G06F1/10 ,  H04B1/38 ,  H04B1/525 ,  H01P5/12

摘要： A CMOS gain element is disclosed herein. Also disclosed herein are splitters, comprising the CMOS gain element, and local oscillator distribution circuitry comprising the splitters and the CMOS gain elements. Semiconductor devices comprising the local oscillator distribution circuitry may have smaller footprints and reduced power consumption relative to prior art devices.

公开(公告)号：US10749473B2

公开(公告)日：2020-08-18

申请号：US15966747

申请日：2018-04-30

申请人： GLOBALFOUNDRIES INC.

发明人： Abdellatif Bellaouar ,  Arul Balasubramaniyan

IPC分类号： H03B19/00 ,  H03B19/06 ,  H03B19/10 ,  H03B19/14 ,  H03K5/00

摘要： An apparatus for performing a frequency multiplication of an mm-wave wave signal is provided. The apparatus includes a first differential circuit that is capable of receiving a 0° phase component of an input signal and a 180° phase component of the input signal having a first frequency. The first differential circuit provides a first output signal that is twice the frequency and is in −phase(0°) based on the 0° the 180° phase components of the input signal. The apparatus also includes a second differential circuit that is capable of receiving a 90° phase component of the input signal and a 270° phase component of the input signal, and provide a first output signal that is twice the frequency and out of phase(180°). The apparatus also includes a differential transformer that is configured to receive the first output signal and the second output signal. The differential transformer is configured to provide a differential output signal that has a second frequency that is twice the first frequency.

公开(公告)号：US10707303B1

公开(公告)日：2020-07-07

申请号：US16264273

申请日：2019-01-31

申请人： GLOBALFOUNDRIES INC.

发明人： Haiting Wang ,  Hui Zang ,  Zhenyu Owen Hu

IPC分类号： H01L29/66 ,  H01L29/06 ,  H01L29/08 ,  H01L21/762

摘要： A semiconductor device, comprising a semiconductor substrate; an isolation layer disposed on the semiconductor substrate; a first active region and a second active region disposed at least partially above the isolation layer; a first gate structure and a second gate structure disposed on the isolation layer, the first active region, and the second active region; and an isolation pillar disposed on the isolation layer, between the first and second active regions, and between and in contact with the first and second gate structures, wherein the isolation pillar has an inverted-T shape. A method for making the semiconductor device. A system configured to implement the method and manufacture the semiconductor device.

公开(公告)号：US10685881B2

公开(公告)日：2020-06-16

申请号：US16112511

申请日：2018-08-24

申请人： GLOBALFOUNDRIES INC.

发明人： Hui Zang ,  Guowei Xu ,  Haiting Wang

IPC分类号： H01L21/70 ,  H01L21/768 ,  H01L29/78 ,  H01L29/06 ,  H01L29/49 ,  H01L23/535 ,  H01L23/532 ,  H01L29/66

摘要： A method, apparatus, and manufacturing system are disclosed for a fin field effect transistor having a reduced risk of short circuits between a gate and a source/drain contact. In one embodiment, we disclose a semiconductor device including a fin structure comprising a fin body, source/drain regions, and a metal formation disposed above the source/drain regions, wherein the metal formation has a first height; and a gate structure between the source/drain regions, wherein each gate structure comprises spacers in contact with the metal formation, wherein the spacers have a second height less than the first height, a metal plug between the spacers and below the second height, and a T-shaped cap above the metal plug and having the first height.

公开(公告)号：US10594356B1

公开(公告)日：2020-03-17

申请号：US16526778

申请日：2019-07-30

申请人： GLOBALFOUNDRIES INC.

发明人： Saquib Bin Halim ,  Md Sayed Kaysar Bin Rahim ,  Marcel Wieland

IPC分类号： H04B1/38 ,  H04B1/40 ,  H01L23/66 ,  H01L21/56 ,  H01L23/48 ,  H01L23/31 ,  H01L23/552 ,  H01L21/768

摘要： A semiconductor device comprising an on-mold antenna for transmitting and/or receiving a millimeter-wave radio frequency signal is provided. The semiconductor device includes a semiconductor layer; a polymer layer proximal to the semiconductor layer; a mold proximal to the polymer layer; a plurality of nodes proximal to the semiconductor layer and distal to the polymer layer; an antenna disposed on the mold; and a conductive element providing electrical communication between the antenna and a first node. The mold may be from 500 μm to 1000 μm thick, such as from 750 μm to 800 μm thick, such as about 775 μm.

公开(公告)号：US10593593B2

公开(公告)日：2020-03-17

申请号：US16047470

申请日：2018-07-27

申请人： GLOBALFOUNDRIES INC.

发明人： Vimal Kamineni ,  Ruilong Xie ,  Mark Raymond

IPC分类号： H01L21/768 ,  H01L21/285 ,  H01L21/82 ,  H01L29/417 ,  H01L21/8238 ,  H01L29/78 ,  H01L29/66

摘要： Methods comprising forming a cobalt formation on an active feature of a semiconductor device, wherein the semiconductor device comprises an inactive feature above the cobalt formation; forming a cap on the cobalt formation; removing at least a portion of the inactive feature, wherein the cobalt formation is substantially not removed; forming a dielectric material above the cap; and forming a first contact to the cobalt formation. Systems configured to implement the methods. Semiconductor devices produced by the methods.