Thin film transistor and manufacturing method thereof
    1.
    发明授权
    Thin film transistor and manufacturing method thereof 有权
    薄膜晶体管及其制造方法

    公开(公告)号:US08344384B2

    公开(公告)日:2013-01-01

    申请号:US13024978

    申请日:2011-02-10

    IPC分类号: H01L29/04

    摘要: Disclosed are a thin film transistor and a method of manufacturing the thin film transistor. An electrode layer of the thin film transistor includes a seed layer formed of a transparent conductive material doped with indium gallium zinc oxide (IGZO) and a main layer formed of a transparent conductive material. The thin film transistor includes a substrate, a gate electrode on the substrate, a gate insulation film on the substrate to cover the gate electrode, a semiconductor layer disposed on the gate insulation film in a region corresponding to the gate electrode, an electrode layer having a double layer structure and disposed on the gate insulation film in a manner such that a topside portion of the semiconductor layer is exposed through the electrode layer, and a passivation layer on the gate insulation film to cover the semiconductor layer and the electrode layer.

    摘要翻译: 公开了薄膜晶体管和制造薄膜晶体管的方法。 薄膜晶体管的电极层包括由掺杂有铟镓锌氧化物(IGZO)的透明导电材料和由透明导电材料形成的主层形成的晶种层。 所述薄膜晶体管包括基板,所述基板上的栅极电极,所述基板上的覆盖所述栅电极的栅极绝缘膜,在与所述栅电极对应的区域中的所述栅极绝缘膜上设置的半导体层,具有 双层结构,并且以使得半导体层的顶侧部分通过电极层露出的方式设置在栅极绝缘膜上,以及在栅极绝缘膜上覆盖半导体层和电极层的钝化层。

    Digital garment using knitting technology and fabricating method thereof
    2.
    发明授权
    Digital garment using knitting technology and fabricating method thereof 有权
    使用针织技术的数字服装及其制造方法

    公开(公告)号:US08116898B2

    公开(公告)日:2012-02-14

    申请号:US12919294

    申请日:2008-06-27

    IPC分类号: G06F19/00

    摘要: A digital garment and a fabrication method thereof are provided. The digital garment is fabricated using a knitting technique. The digital garment comprises a plurality of knitting yarns forming loops at regular intervals and interwoven through the loops, and one or more conductive digital yarns tied to the loops of the knitting yarns to form high-speed information communication circuits. The knitting yarns and the digital yarns are knitted together into a garment. During knitting, the digital yarns are used to form high-speed information communication circuits in a rapid and economical manner.

    摘要翻译: 提供了一种数字服装及其制造方法。 数码服装采用针织技术制造。 数字服装包括多个针织纱,其以规则间隔形成环,并且通过环交织,以及一根或多根连接到针织纱的圈的导电数字纱,以形成高速信息通信电路。 针织纱和数字纱一起编织成衣服。 在编织期间,数字纱线以快速和经济的方式用于形成高速信息通信电路。

    Inorganic light-emitting device
    3.
    发明授权
    Inorganic light-emitting device 失效
    无机发光装置

    公开(公告)号:US08314544B2

    公开(公告)日:2012-11-20

    申请号:US13061250

    申请日:2009-09-01

    申请人: Sang Hyun Ju

    发明人: Sang Hyun Ju

    IPC分类号: H01J1/62 H01J1/63 H01L51/54

    CPC分类号: H05B33/145

    摘要: The present invention relates to an inorganic light-emitting device, and more particularly, to an inorganic light emitting device having superior mechanical strength and a long lifespan, and which is capable of maintaining uniform and high efficiency of light emission, and has transparent and flexible characteristics. The inorganic light emitting device of the present invention includes a first electrode, a fluorescent layer formed on the first electrode, and which includes a plurality of nanowires made of inorganic light-emitting materials, and a second electrode formed on the fluorescent layer. The fluorescent layer is coated with the plurality of nanowires.

    摘要翻译: 无机发光装置技术领域本发明涉及无机发光装置,更具体地说,涉及具有优异的机械强度和长寿命的无机发光装置,其能够保持均匀和高效率的发光,并且具有透明和柔性 特点 本发明的无机发光器件包括第一电极,形成在第一电极上的荧光层,并且包括由无机发光材料制成的多个纳米线,以及形成在荧光层上的第二电极。 荧光层被多个纳米线涂覆。

    Thin film transistor and method for fabricating thin film transistor
    4.
    发明授权
    Thin film transistor and method for fabricating thin film transistor 有权
    薄膜晶体管及制造薄膜晶体管的方法

    公开(公告)号:US08178877B2

    公开(公告)日:2012-05-15

    申请号:US12794062

    申请日:2010-06-04

    IPC分类号: H01L29/786 H01L21/86

    摘要: Disclosed are a thin film transistor having high reliability and providing a simplified fabricating process, and a method of fabricating the thin film transistor. In the method, a dielectric substrate is prepared, a semiconductor layer is formed on the dielectric substrate, a gate dielectric film is formed on the semiconductor layer, a first gate electrode is formed on the gate dielectric film, a second gate electrode contacting a side wall of the first gate electrode is formed, and impurities are implanted into the semiconductor layer using the first gate electrode as a mask.

    摘要翻译: 公开了具有高可靠性并提供简化的制造工艺的薄膜晶体管,以及制造薄膜晶体管的方法。 在该方法中,制备电介质基板,在电介质基板上形成半导体层,在半导体层上形成栅极绝缘膜,在栅极电介质膜上形成第一栅电极, 形成第一栅电极的壁,并且使用第一栅电极作为掩模将杂质注入到半导体层中。

    Desulfurizing agent and method for manufacturing the same
    6.
    发明授权
    Desulfurizing agent and method for manufacturing the same 有权
    脱硫剂及其制造方法

    公开(公告)号:US08349050B2

    公开(公告)日:2013-01-08

    申请号:US12570406

    申请日:2009-09-30

    IPC分类号: C21C7/04 C22C23/02

    CPC分类号: B22D23/00 C21C7/0645

    摘要: The present invention relates to a desulfurizing agent of improved oxidation resistance, ignition resistance and productivity, and a method for manufacturing the desulfurizing agent. The desulfurizing agent may include a plurality of magnesium-aluminum alloy grains with grain boundaries, and a compound of one selected from consisting of magnesium and aluminum and one selected from consisting of alkaline metal and alkaline earth metal, the compound exists in the grain boundaries and is not inside but outside of the magnesium-aluminum alloy grains.

    摘要翻译: 本发明涉及耐氧化性,耐点火性和生产率提高的脱硫剂,以及脱硫剂的制造方法。 脱硫剂可以包括多个具有晶界的镁 - 铝合金晶粒和选自镁和铝的化合物和选自碱金属和碱土金属的化合物,该化合物存在于晶界和 不在镁铝合金颗粒的内部。