公开(公告)号：US5958146A

公开(公告)日：1999-09-28

申请号：US160505

申请日：1998-09-24

申请人： Raj Mohindra ,  Abhay Bhushan ,  Rajiv Bhushan ,  Suraj Puri ,  David Wong

发明人： Raj Mohindra ,  Abhay Bhushan ,  Rajiv Bhushan ,  Suraj Puri ,  David Wong

IPC分类号： H01L21/00 ,  H01L21/306 ,  B08B3/04 ,  B08B3/10 ,  B08B5/00

CPC分类号： H01L21/67057 ,  H01L21/67051 ,  H01L21/02049 ,  Y10S134/902

摘要： A method (400) for cleaning a semiconductor wafer. The method includes immersing (420) a wafer in a hot or heated liquid comprising water. The wafer has a front face, a back face, and an edge. The method also includes providing a substantially particle free environment adjacent to the front face and the back face as the liquid is being removed. A step of introducing a carrier gas comprising a cleaning enhancement substance during the providing step (450) also is included. The cleaning enhancement substance dopes the liquid which is attached to the front face and the back face to cause a concentration gradient of the cleaning enhancement substance in the attached liquid to accelerate fluid flow of the attached liquid off of the wafer.

摘要翻译： 一种用于清洁半导体晶片的方法（400）。 该方法包括将晶片浸入（420）包含水的热或加热液体中。 晶片具有前表面，后表面和边缘。 该方法还包括当正在除去液体时提供与前表面和背面相邻的基本上无颗粒的环境。 还包括在提供步骤（450）期间引入包含清洁增强物质的载气的步骤。 清洁增强物质涂覆附着在前表面和背面上的液体，引起附着液体中的清洁增强物质的浓度梯度，从而加速了附着液体流出晶片的流体流动。

公开(公告)号：US5891256A

公开(公告)日：1999-04-06

申请号：US861456

申请日：1997-12-29

申请人： Raj Mohindra ,  Abhay Bhushan ,  Rajiv Bhushan ,  Suraj Puri ,  John H. Anderson, Sr. ,  Jeffrey Nowell

发明人： Raj Mohindra ,  Abhay Bhushan ,  Rajiv Bhushan ,  Suraj Puri ,  John H. Anderson, Sr. ,  Jeffrey Nowell

IPC分类号： B08B7/04 ,  B08B3/10 ,  G11B23/50 ,  H01L21/00 ,  H01L21/027 ,  H01L21/304 ,  H01L21/306 ,  B08B3/04 ,  B08B5/00

CPC分类号： H01L21/02052 ,  B08B3/10 ,  G11B23/505 ,  H01L21/67028 ,  H01L21/67051 ,  H01L21/67057 ,  H01L21/6708 ,  H01L21/67086 ,  H01L21/02049 ,  Y10S134/902

摘要： A method for cleaning a semiconductor wafer. The method includes immersing a wafer in a liquid including water. The wafer has a front face, a back face, and an edge. The method also includes providing a substantially particle free environment adjacent to the front face and the back face as the liquid is being removed. A step of introducing a carrier gas including a cleaning enhancement substance during the providing step also is included. The cleaning enhancement substance dopes the liquid which is attached to the front face and the back face to cause a concentration gradient of the cleaning enhancement substance in the attached liquid to accelerate fluid flow of the attached liquid off of the wafer.

摘要翻译： 一种用于清洁半导体晶片的方法。 该方法包括将晶片浸入包括水的液体中。 晶片具有前表面，后表面和边缘。 该方法还包括当正在除去液体时提供与前表面和背面相邻的基本上无颗粒的环境。 还包括在提供步骤中引入包括清洁增强物质的载气的步骤。 清洁增强物质涂覆附着在前表面和背面上的液体，引起附着液体中的清洁增强物质的浓度梯度，从而加速了附着液体流出晶片的流体流动。

公开(公告)号：US5878760A

公开(公告)日：1999-03-09

申请号：US862083

申请日：1997-05-22

申请人： Raj Mohindra ,  Abhay Bhushan ,  Rajiv Bhushan ,  Suraj Puri ,  John H. Anderson, Sr. ,  Jeffrey Nowell

发明人： Raj Mohindra ,  Abhay Bhushan ,  Rajiv Bhushan ,  Suraj Puri ,  John H. Anderson, Sr. ,  Jeffrey Nowell

IPC分类号： B08B7/04 ,  B08B3/10 ,  G11B23/50 ,  H01L21/00 ,  H01L21/027 ,  H01L21/304 ,  H01L21/306 ,  B08B3/04

CPC分类号： H01L21/02052 ,  B08B3/10 ,  G11B23/505 ,  H01L21/67028 ,  H01L21/67051 ,  H01L21/67057 ,  H01L21/6708 ,  H01L21/67086 ,  H01L21/02049 ,  Y10S134/902

摘要： A method (400) for cleaning a semiconductor wafer. The method includes immersing (420) a wafer in a liquid comprising water. The wafer has a front face, a back face, and an edge. The method also includes providing a substantially particle free environment adjacent to the front face and the back face as the liquid is being removed. A step of introducing a carrier gas comprising a cleaning enhancement substance during the providing step (450) also is included. The cleaning enhancement substance dopes the liquid which is attached to the front face and the back face to cause a concentration gradient of the cleaning enhancement substance in the attached liquid to accelerate fluid flow of the attached liquid off of the wafer.

公开(公告)号：US5932027A

公开(公告)日：1999-08-03

申请号：US5976

申请日：1998-01-12

申请人： Raj Mohindra ,  Abhay Bhushan ,  Rajiv Bhushan ,  Suraj Puri ,  John H. Anderson, Sr. ,  Jeffrey Nowell

发明人： Raj Mohindra ,  Abhay Bhushan ,  Rajiv Bhushan ,  Suraj Puri ,  John H. Anderson, Sr. ,  Jeffrey Nowell

IPC分类号： B08B7/04 ,  B08B3/10 ,  G11B23/50 ,  H01L21/00 ,  H01L21/027 ,  H01L21/304 ,  H01L21/306 ,  B08B3/04 ,  B08B5/00

CPC分类号： H01L21/02052 ,  B08B3/10 ,  G11B23/505 ,  H01L21/67028 ,  H01L21/67051 ,  H01L21/67057 ,  H01L21/6708 ,  H01L21/67086 ,  H01L21/02049 ,  Y10S134/902

摘要： A method for cleaning a semiconductor wafer. The method includes immersing a wafer in a liquid having water. The wafer has a front face, a back face, and an edge. The method also includes providing a substantially particle free environment adjacent to the front face and the back face as the liquid is being removed. A step of introducing a carrier gas having a cleaning enhancement substance during the providing step also is included. The cleaning enhancement substance dopes the liquid which is attached to the front face and the back face to cause a concentration gradient of the cleaning enhancement substance in the attached liquid to accelerate fluid flow of the attached liquid off of the wafer.

摘要翻译： 一种用于清洁半导体晶片的方法。 该方法包括将晶片浸入具有水的液体中。 晶片具有前表面，后表面和边缘。 该方法还包括当正在除去液体时提供与前表面和背面相邻的基本上无颗粒的环境。 还包括在提供步骤中引入具有清洁增强物质的载气的步骤。 清洁增强物质涂覆附着在前表面和背面上的液体，引起附着液体中的清洁增强物质的浓度梯度，以加速从晶片脱离的附着液体的流体流动。

公开(公告)号：US5873947A

公开(公告)日：1999-02-23

申请号：US907322

申请日：1997-08-06

申请人： Raj Mohindra ,  Abhay Bhushan ,  Rajiv Bhushan ,  Suraj Puri ,  John H. Anderson, Sr. ,  Jeffrey Nowell

发明人： Raj Mohindra ,  Abhay Bhushan ,  Rajiv Bhushan ,  Suraj Puri ,  John H. Anderson, Sr. ,  Jeffrey Nowell

IPC分类号： B08B7/04 ,  B08B3/10 ,  G11B23/50 ,  H01L21/00 ,  H01L21/027 ,  H01L21/304 ,  H01L21/306 ,  B08B3/04

CPC分类号： H01L21/02052 ,  B08B3/10 ,  G11B23/505 ,  H01L21/67028 ,  H01L21/67051 ,  H01L21/67057 ,  H01L21/6708 ,  H01L21/67086 ,  H01L21/02049 ,  Y10S134/902

摘要： A technique for cleaning a hard disk using a novel support device 502. The technique includes immersing a disk in a liquid comprising water. The disk has a front face, a back face, an edge, and a center region. The method also includes providing a substantially particle free environment adjacent to the front face and the back face as the liquid is being removed. A step of introducing a carrier gas comprising a cleaning enhancement substance during the providing step also is included. The cleaning enhancement substance dopes the liquid which is attached to the front face and the back face to cause a concentration gradient of the cleaning enhancement substance in the attached liquid to accelerate fluid flow of the attached liquid off of the disk.

摘要翻译： 使用新颖的支持装置502清洁硬盘的技术。该技术包括将盘浸入包含水的液体中。 盘具有正面，背面，边缘和中心区域。 该方法还包括当正在除去液体时提供与前表面和背面相邻的基本上无颗粒的环境。 还包括在提供步骤中引入包含清洁增强物质的载气的步骤。 清洁增强物质涂覆附着在前表面和背面上的液体，使得附着液体中的清洁增强物质的浓度梯度加速，从而加速了附着液体流出盘的流体流动。

公开(公告)号：US5685327A

公开(公告)日：1997-11-11

申请号：US695285

申请日：1996-08-08

申请人： Raj Mohindra ,  Abhay Bhushan ,  Rajiv Bhushan ,  Suraj Puri ,  John H. Anderson ,  Jeffrey Nowell

发明人： Raj Mohindra ,  Abhay Bhushan ,  Rajiv Bhushan ,  Suraj Puri ,  John H. Anderson ,  Jeffrey Nowell

IPC分类号： B08B3/10 ,  G11B23/50 ,  H01L21/00 ,  H01L21/306 ,  B08B3/04

CPC分类号： H01L21/02052 ,  B08B3/10 ,  G11B23/505 ,  H01L21/67028 ,  H01L21/67051 ,  H01L21/67057 ,  H01L21/6708 ,  H01L21/67086 ,  H01L21/02049 ,  Y10S134/902

摘要： Apparatus for cleaning and drying a semiconductor wafer. The apparatus includes a vessel adapted to immerse a partially completed semiconductor wafer in a liquid comprising water. The apparatus also includes a control valve operably coupled to the vessel through a drain, and adapted to allow a gaseous mixture to displace the liquid in the vessel, where the liquid is displaced adjacent to the front face of the partially completed wafer. A controller is included. The controller is operably coupled to a plurality of nozzles. The controller can be used to pulse a drying fluid from the plurality of nozzles to the partially completed wafer to remove a possibility of liquid which may be attached to the partially completed wafer.

摘要翻译： 用于清洁和干燥半导体晶片的装置。 该装置包括适于将部分完成的半导体晶片浸入包含水的液体中的容器。 该装置还包括控制阀，该控制阀通过排水口可操作地连接到容器，并且适于允许气体混合物移动容器中的液体，其中液体邻近部分完成的晶片的前表面移动。 包括控制器。 控制器可操作地耦合到多个喷嘴。 控制器可以用于将干​​燥流体从多个喷嘴脉冲到部分完成的晶片，以消除可能附着到部分完成的晶片的液体的可能性。

公开(公告)号：US06491043B2

公开(公告)日：2002-12-10

申请号：US10014113

申请日：2001-12-11

申请人： Raj Mohindra ,  Abhay Bhushan ,  Rajiv Bhushan ,  Suraj Puri ,  John H. Anderson, Sr. ,  Jeffrey Nowell

发明人： Raj Mohindra ,  Abhay Bhushan ,  Rajiv Bhushan ,  Suraj Puri ,  John H. Anderson, Sr. ,  Jeffrey Nowell

IPC分类号： B08B304

CPC分类号： H01L21/02052 ,  B08B3/10 ,  G11B23/505 ,  H01L21/02049 ,  H01L21/67028 ,  H01L21/67051 ,  H01L21/67057 ,  H01L21/6708 ,  H01L21/67086 ,  Y10S134/902

摘要： A method (400) for cleaning a semiconductor wafer. The method includes immersing (420) a wafer in a liquid comprising water. The wafer has a front face, a back face, and an edge. The method also includes providing a substantially particle free environment adjacent to the front face and the back face as the liquid is being removed. A step of introducing a carrier gas comprising a cleaning enhancement substance during the providing step (450) also is included. The cleaning enhancement substance dopes the liquid which is attached to the front face and the back face to cause a concentration gradient of the cleaning enhancement substance in the attached liquid to accelerate fluid flow of the attached liquid off of the wafer.

公开(公告)号：US5868150A

公开(公告)日：1999-02-09

申请号：US862082

申请日：1997-05-22

申请人： Raj Mohindra ,  Abhay Bhushan ,  Rajiv Bhushan ,  Suraj Puri ,  John H. Anderson, Sr. ,  Jeffrey Nowell

发明人： Raj Mohindra ,  Abhay Bhushan ,  Rajiv Bhushan ,  Suraj Puri ,  John H. Anderson, Sr. ,  Jeffrey Nowell

IPC分类号： B08B7/04 ,  B08B3/10 ,  G11B23/50 ,  H01L21/00 ,  H01L21/027 ,  H01L21/304 ,  H01L21/306 ,  B08B3/04

CPC分类号： H01L21/02052 ,  B08B3/10 ,  G11B23/505 ,  H01L21/67028 ,  H01L21/67051 ,  H01L21/67057 ,  H01L21/6708 ,  H01L21/67086 ,  H01L21/02049 ,  Y10S134/902

摘要： A method (400) for cleaning a semiconductor wafer. The method includes immersing (420) a wafer in a liquid comprising water. The wafer has a front face, a back face, and an edge. The method also includes providing a substantially particle free environment adjacent to the front face and the back face as the liquid is being removed. A step of introducing a carrier gas comprising a cleaning enhancement substance during the providing step (450) also is included. The cleaning enhancement substance dopes the liquid which is attached to the front face and the back face to cause a concentration gradient of the cleaning enhancement substance in the attached liquid to accelerate fluid flow of the attached liquid off of the wafer.

公开(公告)号：US5772784A

公开(公告)日：1998-06-30

申请号：US555634

申请日：1995-11-08

申请人： Raj Mohindra ,  Abhay Bhushan ,  Rajiv Bhushan ,  Suraj Puri ,  John H. Anderson, Sr. ,  Jeffrey Nowell

发明人： Raj Mohindra ,  Abhay Bhushan ,  Rajiv Bhushan ,  Suraj Puri ,  John H. Anderson, Sr. ,  Jeffrey Nowell

IPC分类号： B08B7/04 ,  B08B3/10 ,  G11B23/50 ,  H01L21/00 ,  H01L21/027 ,  H01L21/304 ,  H01L21/306 ,  B08B3/04 ,  B08B5/00

CPC分类号： H01L21/02052 ,  B08B3/10 ,  G11B23/505 ,  H01L21/67028 ,  H01L21/67051 ,  H01L21/67057 ,  H01L21/6708 ,  H01L21/67086 ,  H01L21/02049 ,  Y10S134/902

摘要： A method (400) for cleaning a semiconductor wafer. The method includes immersing (420) a wafer in a liquid comprising water. The wafer has a front face, a back face, and an edge. The method also includes providing a substantially particle free environment adjacent to the front face and the back face as the liquid is being removed. A step of introducing a carrier gas comprising a cleaning enhancement substance during the providing step (450) also is included. The cleaning enhancement substance dopes the liquid which is attached to the front face and the back face to cause a concentration gradient of the cleaning enhancement substance in the attached liquid to accelerate fluid flow of the attached liquid off of the wafer.

公开(公告)号：US5571337A

公开(公告)日：1996-11-05

申请号：US437541

申请日：1995-05-09

申请人： Raj Mohindra ,  Abhay Bhushan ,  Rajiv Bhushan ,  Suraj Puri ,  John H. Anderson ,  Jeffrey Nowell

发明人： Raj Mohindra ,  Abhay Bhushan ,  Rajiv Bhushan ,  Suraj Puri ,  John H. Anderson ,  Jeffrey Nowell

IPC分类号： B08B3/10 ,  G11B23/50 ,  H01L21/00 ,  H01L21/306 ,  B08B3/04

CPC分类号： H01L21/02052 ,  B08B3/10 ,  G11B23/505 ,  H01L21/67028 ,  H01L21/67051 ,  H01L21/67057 ,  H01L21/6708 ,  H01L21/67086 ,  H01L21/02049 ,  Y10S134/902

摘要： A method for drying articles with flat surfaces such as a semiconductor wafer. The method includes steps of immersing a semiconductor wafer in a liquid such as water, and displacing the liquid with a gaseous mixture. The liquid is displaced adjacent to a face of the wafer as measured from the face. A step of pulsing drying fluid directed at wafer edges is also included. The method dries wafers without the use of any harmful organic solvents and the like, and also dries wafers without substantial movement.

摘要翻译： 用于干燥具有诸如半导体晶片的平坦表面的物品的方法。 该方法包括以下步骤：将半导体晶片浸入诸如水的液体中，并用气体混合物置换液体。 液体从表面测量时相邻于晶片的表面移动。 脉冲干燥流体的步骤也指向晶片边缘。 该方法干燥晶片而不使用任何有害的有机溶剂等，并且干燥晶片而没有实质的移动。