摘要:
Hybrid solid state drives (SSD) using a combination of single-level cell (SLC) and multi-level cell (MLC) flash memory arrays are described. According to one aspect of the present invention, a hybrid SSD is built using a combination SLC and MLC flash memory arrays. The SSD also includes a micro-controller to control and coordinate data transfer from a host computing device to either the SLC flash memory array of the MLC flash memory array. A memory selection indicator is determined by triaging data file based on one or more criteria, which include, but is not limited to, storing system files and user directories in the SLC flash memory array and storing user files in the MLC flash memory array; or storing more frequent access files in the SLC flash memory array, while less frequent accessed files in the MLC flash memory array.
摘要:
High endurance non-volatile memory devices (NVMD) are described. A high endurance NVMD includes an I/O interface, a NVM controller, a CPU along with a volatile memory subsystem and at least one non-volatile memory (NVM) module. The volatile memory cache subsystem is configured as a data cache subsystem. The at least one NVM module is configured as a data storage when the NVMD is adapted to a host computer system. The I/O interface is configured to receive incoming data from the host to the data cache subsystem and to send request data from the data cache subsystem to the host. The at least one NVM module may comprise at least first and second types of NVM. The first type comprises SLC flash memory while the second type MLC flash. The first type of NVM is configured as a buffer between the data cache subsystem and the second type of NVM.
摘要:
Non-volatile memory based computer systems and methods are described. According to one aspect of the invention, at least one non-volatile memory module is coupled to a computer system as main storage. The non-volatile memory module is controlled by a northbridge controller configured to control the non-volatile memory as main memory. The page size of the at least one non-volatile memory module is configured to be the size of one of the cache lines associated with a microprocessor of the computer system. According to another aspect, at least one non-volatile memory module is coupled to a computer system as data read/write buffer of one or more hard disk drives. The non-volatile memory module is controlled by a southbridge controller configured to control the non-volatile memory as an input/out device. The page size of the at least one non-volatile memory module is configured in proportion to characteristics of the hard disk drives.
摘要:
A Universal Serial Bus (USB) memory card includes a tube metal housing that is rectangularly-shaped and a Chip-On-Board (COB)-Universal Serial Bus (USB) device and a carrier substrate having a U-block disposed on one side of thereof and vertically extending upwardly from a bottom surface of the U-block, the COB-USB device positioned on the carrier substrate forming a USB card sub-assembly, the USB card sub-assembly being securely located inside the metal housing with the U-block serving to stop the COB-USB device from slipping out of the metal housing.
摘要:
Data error detection and correction in non-volatile memory devices are disclosed. Data error detection and correction can be performed with software, hardware or a combination of both. Generally an error corrector is referred to as an ECC (error correction code). One of the most relevant codes using in non-volatile memory devices is based on BCH (Bose, Ray-Chaudhuri, Hocquenghem) code. In order to correct reasonable number (e.g., up to 8-bit (eight-bit)) of random errors in a chunk of data (e.g., a codeword of 4200-bit with 4096-bit information data), a BCH(4200,4096,8) is used in GF(213). ECC comprises encoder and decoder. The decoder further comprises a plurality of error detectors and one error corrector. The plurality of error decoders is configured for calculating odd terms of syndrome polynomial for multiple channels in parallel, while the error corrector is configured for sequentially calculating even terms of syndrome polynomial, key solver and error location.
摘要:
A Universal Serial Bus (USB) flash drive includes a slim USB device having an end used to couple the USB flash drive to a host and an opposite end and a swivel cap having a side slit that serves as an opening into which the slim USB device travels horizontally, the side slit being disposed along a lateral side of the swivel cap. The USB flash drive also includes a USB device rivet placed into the slim USB device and the swivel cap to pivotally connect them at one of the ends of the slim USB device, so that the slim USB device is pivotally extendable outwardly from the side slit in a closed or open position. The swivel rocker is pivotally extendable outwardly from the opposite end of the slim USB device and when the swivel rocker is extended outwardly, the slim USB device is caused to extend outwardly.
摘要:
A Universal Serial Bus (USB) flash drive includes a slim USB device having an end used to couple the USB flash drive to a host and an opposite end, and a swivel “strap shaped” metal cap having a circle cut out disposed on both cap legs. The snap coupling circle attachment allows the swivel cap to rotate substantially into a first and a second locking position and to rotate substantially 360 degrees about the z-axis of the USB device. The metal cap is generally in a locked position when the snap slot is aligned atop the snap lock tabs such that the protrusion snap ring is descended downward until the positioned flush against the snap lock groove. When unlocked the protrusion snap ring is raised up and rested upon the two snap lock tabs.
摘要:
A Universal Serial Bus (USB) flash drive includes a slim USB device having an end used to couple the USB flash drive to a host and an opposite end, and a swivel “strap shaped” metal cap having a circle cut out disposed on both cap legs. The snap coupling circle attachment allows the swivel cap to rotate substantially into a first and a second locking position and to rotate substantially 360 degrees about the z-axis of the USB device. The metal cap is generally in a locked position when the snap slot is aligned atop the snap lock tabs such that the protrusion snap ring is descended downward until the positioned flush against the snap lock groove. When unlocked the protrusion snap ring is raised up and rested upon the two snap lock tabs.
摘要:
Hybrid solid state drives (SSD) using a combination of single-level cell (SLC) and multi-level cell (MLC) flash memory arrays are described. According to one aspect of the present invention, a hybrid SSD is built using a combination SLC and MLC flash memory arrays. The SSD also includes a micro-controller to control and coordinate data transfer from a host computing device to either the SLC flash memory array of the MLC flash memory array. A memory selection indicator is determined by triaging data file based on one or more criteria, which include, but is not limited to, storing system files and user directories in the SLC flash memory array and storing user files in the MLC flash memory array; or storing more frequent access files in the SLC flash memory array, while less frequent accessed files in the MLC flash memory array.
摘要:
High endurance non-volatile memory devices (NVMD) are described. A high endurance NVMD includes an I/O interface, a NVM controller, a CPU along with a volatile memory subsystem and at least one non-volatile memory (NVM) module. The volatile memory cache subsystem is configured as a data cache subsystem. The at least one NVM module is configured as a data storage when the NVMD is adapted to a host computer system. The I/O interface is configured to receive incoming data from the host to the data cache subsystem and to send request data from the data cache subsystem to the host. The at least one NVM module may comprise at least first and second types of NVM. The first type comprises SLC flash memory while the second type MLC flash. The first type of NVM is configured as a buffer between the data cache subsystem and the second type of NVM.