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1.发明授权Low dislocation density group III nitride layers on silicon carbide substrates and methods of making the same 有权碳化硅衬底上的低位错密度III族氮化物层及其制造方法公开(公告)号：US09331192B2
公开(公告)日：2016-05-03
申请号：US11169471
申请日：2005-06-29
申请人： Adam William Saxler
发明人： Adam William Saxler
IPC分类号： H01L29/66 , H01L29/778 , H01L29/16 , H01L29/20
CPC分类号： H01L29/7787 , H01L29/1608 , H01L29/2003
摘要： Group III nitride semiconductor device structures are provided that include a silicon carbide (SiC) substrate and a Group III nitride epitaxial layer above the SiC substrate. The Group III nitride epitaxial layer has a dislocation density of less than about 4×108 cm−2 and/or an isolation voltage of at least about 50V.
摘要翻译： 提供了在SiC衬底上方包括碳化硅（SiC）衬底和III族氮化物外延层的III族氮化物半导体器件结构。 III族氮化物外延层具有小于约4×10 8 cm -2的位错密度和/或至少约50V的隔离电压。
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2.发明授权Nitride-based transistors having laterally grown active region and methods of fabricating same 有权具有横向增长的有源区的氮化物基晶体管及其制造方法公开(公告)号：US08946777B2
公开(公告)日：2015-02-03
申请号：US12564473
申请日：2009-09-22
IPC分类号： H01L31/0328 , H01L29/778 , H01L29/66 , H01L29/20
CPC分类号： H01L29/7787 , H01L29/2003 , H01L29/66462
摘要： High electron mobility transistors and/or methods of fabricating high electron mobility transistors that include a first Group III-nitride layer having vertically grown regions, laterally grown regions and a coalescence region are provided. A Group III-nitride channel layer is provided on the first Group III-nitride layer and a Group III-nitride barrier layer is provided on the Group III-nitride channel layer. A drain contact, a source contact and a gate contact are provided on the barrier layer. The gate contact is disposed on a portion of the barrier layer on a laterally grown region of the first Group III-nitride layer and at least a portion of one of the source contact and/or the drain contact is disposed on a portion of the barrier layer on a vertically grown region of the first Group III-nitride layer.
摘要翻译： 提供了高电子迁移率晶体管和/或制造高电子迁移率晶体管的方法，其包括具有垂直生长区域，横向生长区域和聚结区域的第一III族氮化物层。 III族氮化物沟道层设置在第一III族氮化物层上，III族氮化物阻挡层设置在III族氮化物沟道层上。 漏极接触，源极接触和栅极接触设置在阻挡层上。 栅极触点设置在第一III族氮化物层的横向生长区域上的阻挡层的一部分上，并且源极接触和/或漏极接触中的一个的至少一部分设置在屏障的一部分上 在第一III族氮化物层的垂直生长区上。
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3.发明授权Group III nitride field effect transistors (FETS) capable of withstanding high temperature reverse bias test conditions 有权能耐受高温反向偏压测试条件的III类氮化物场效应晶体管（FETS）公开(公告)号：US08803198B2
公开(公告)日：2014-08-12
申请号：US13483607
申请日：2012-05-30
IPC分类号： H01L29/739 , H01L31/072
CPC分类号： H01L27/0605 , H01L29/2003 , H01L29/207 , H01L29/42316 , H01L29/7787
摘要： Group III Nitride based field effect transistor (FETs) are provided having a power degradation of less than about 3.0 dB when operated at a drain-to-source voltage (VDS) of about from about 28 to about 70 volts, a gate to source voltage (Vgs) of from about −3.3 to about −14 volts and a normal operating temperature for at least about 10 hours.
摘要翻译： 提供基于III族氮化物的场效应晶体管（FET），其在约28至约70伏特的漏极 - 源极电压（VDS）下操作时具有小于约3.0dB的功率劣化，栅极至源极电压 （Vgs）为约-3.3至约-14伏，正常工作温度为至少约10小时。
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4.发明申请LOW RESISTANCE BIDIRECTIONAL JUNCTIONS IN WIDE BANDGAP SEMICONDUCTOR MATERIALS 审中-公开在宽带半导体材料中的低电阻双向连接公开(公告)号：US20130270514A1
公开(公告)日：2013-10-17
申请号：US13447915
申请日：2012-04-16
申请人： Adam William Saxler
发明人： Adam William Saxler
CPC分类号： H01L33/08 , H01L25/0756 , H01L29/2003 , H01L29/861 , H01L29/868 , H01L33/42 , H01L2924/0002 , H01L2924/00
摘要： A light emitting diode device includes a first diode structure, a second diode structure on the first diode structure, and a conductive junction between the first diode structure and the second diode structure. The conductive junction includes a transparent conductive layer between the first diode structure and the second diode structure. Low resistance heterojunction tunnel junction structures including delta-doped layers are also disclosed.
摘要翻译： 发光二极管器件包括第一二极管结构，第一二极管结构上的第二二极管结构以及第一二极管结构和第二二极管结构之间的导电结。 导电结包括在第一二极管结构和第二二极管结构之间的透明导电层。 还公开了包括δ-掺杂层的低电阻异质结隧道结结构。
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5.发明申请Group III Nitride Field Effect Transistors (FETS) Capable of Withstanding High Temperature Reverse Bias Test Conditions 有权第III组氮化物场效应晶体管（FETS）能承受高温反向偏压测试条件公开(公告)号：US20120235159A1
公开(公告)日：2012-09-20
申请号：US13483607
申请日：2012-05-30
IPC分类号： H01L29/778
CPC分类号： H01L27/0605 , H01L29/2003 , H01L29/207 , H01L29/42316 , H01L29/7787
摘要： Group III Nitride based field effect transistor (FETs) are provided having a power degradation of less than about 3.0 dB when operated at a drain-to-source voltage (VDS) of about from about 28 to about 70 volts, a gate to source voltage (Vgs) of from about −3.3 to about −14 volts and a normal operating temperature for at least about 10 hours.
摘要翻译： 提供基于III族氮化物的场效应晶体管（FET），其在约28至约70伏特的漏极 - 源极电压（VDS）下操作时具有小于约3.0dB的功率劣化，栅极至源极电压 （Vgs）为约-3.3至约-14伏，正常工作温度为至少约10小时。
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6.发明授权Group III nitride field effect transistors (FETS) capable of withstanding high temperature reverse bias test conditions 有权能耐受高温反向偏压测试条件的III类氮化物场效应晶体管（FETS）公开(公告)号：US08212289B2
公开(公告)日：2012-07-03
申请号：US12270063
申请日：2008-11-13
IPC分类号： H01L29/739 , H01L31/072
CPC分类号： H01L27/0605 , H01L29/2003 , H01L29/207 , H01L29/42316 , H01L29/7787
摘要： Group III Nitride based field effect transistor (FETs) are provided having a power degradation of less than about 3.0 dB when operated at a drain-to-source voltage (VDS) of about from about 28 to about 70 volts, a gate to source voltage (Vgs) of from about −3.3 to about −14 volts and a normal operating temperature for at least about 10 hours.
摘要翻译： 提供基于III族氮化物的场效应晶体管（FET），其在约28至约70伏特的漏极 - 源极电压（VDS）下操作时具有小于约3.0dB的功率劣化，栅极至源极电压 （Vgs）为约-3.3至约-14伏，正常工作温度为至少约10小时。
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公开(公告)号：US20110064105A1
公开(公告)日：2011-03-17
申请号：US12952278
申请日：2010-11-23
申请人： Adam William Saxler
发明人： Adam William Saxler
CPC分类号： H01L29/1602 , H01L21/02378 , H01L21/02527 , H01L21/0254 , H01L29/778
摘要： A high power, wide-bandgap device is disclosed that exhibits reduced junction temperature and higher power density during operation and improved reliability at a rated power density. The device includes a diamond substrate for providing a heat sink with a thermal conductivity greater than silicon carbide, a single crystal silicon carbide layer on the diamond substrate for providing a supporting crystal lattice match for wide-bandgap material structures that is better than the crystal lattice match of diamond, and a Group III nitride heterostructure on the single crystal silicon carbide layer for providing device characteristics.
摘要翻译： 公开了一种高功率宽带隙器件，其在运行期间表现出降低的结温和更高的功率密度，并且在额定功率密度下具有改进的可靠性。 该器件包括用于提供热导率大于碳化硅的金刚石衬底，金刚石衬底上的单晶碳化硅层，用于为宽带隙材料结构提供支撑晶格匹配，优于晶格 在单晶碳化硅层上形成金刚石和III族氮化物异质结构，以提供器件特性。
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公开(公告)号：US07875910B2
公开(公告)日：2011-01-25
申请号：US11410768
申请日：2006-04-25
IPC分类号： H01L29/80 , H01L21/338
CPC分类号： H03H9/0542 , H01L27/20 , H03H3/08 , H03H9/02228 , H03H9/02574 , H03H9/02976
摘要： A monolithic electronic device includes a first nitride epitaxial structure including a plurality of nitride epitaxial layers. The plurality of nitride epitaxial layers include at least one common nitride epitaxial layer. A second nitride epitaxial structure is on the common nitride epitaxial layer of the first nitride epitaxial structure. A first plurality of electrical contacts is on the first epitaxial nitride structure and defines a first electronic device in the first nitride epitaxial structure. A second plurality of electrical contacts is on the first epitaxial nitride structure and defines a second electronic device in the second nitride epitaxial structure. A monolithic electronic device includes a bulk semi-insulating silicon carbide substrate having implanted source and drain regions and an implanted channel region between the source and drain regions, and a nitride epitaxial structure on the surface of the silicon carbide substrate. Corresponding methods are also disclosed.
摘要翻译： 单片电子器件包括包括多个氮化物外延层的第一氮化物外延结构。 多个氮化物外延层包括至少一个共同的氮化物外延层。 第二氮化物外延结构在第一氮化物外延结构的公共氮化物外延层上。 第一多个电触点在第一外延氮化物结构上，并且限定第一氮化物外延结构中的第一电子器件。 第二多个电触点位于第一外延氮化物结构上，并且在第二氮化物外延结构中限定第二电子器件。 单片电子器件包括具有注入的源极和漏极区域以及源极和漏极区域之间的注入沟道区域的半体绝缘碳化硅衬底和在碳化硅衬底的表面上的氮化物外延结构。 还公开了相应的方法。
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9.发明授权Structure and method for reducing forward voltage across a silicon carbide-group III nitride interface 有权用于降低碳化硅 - III族氮化物界面的正向电压的结构和方法公开(公告)号：US07646024B2
公开(公告)日：2010-01-12
申请号：US11465470
申请日：2006-08-18
申请人： Adam William Saxler
发明人： Adam William Saxler
IPC分类号： H01L31/0256 , H01L31/0312 , H01L21/00
CPC分类号： H01L33/14 , H01L29/1608 , H01L29/2003 , H01L29/267 , H01L33/32 , Y10S438/931
摘要： A structure is disclosed that reduces the forward voltage across the interface between silicon carbide and Group III nitride layers. The structure includes a conductive silicon carbide substrate and a conductive layer of aluminum gallium nitride on the silicon carbide substrate. The aluminum gallium nitride layer has a mole fraction of aluminum that is sufficient to bring the conduction bands of the silicon carbide substrate and the aluminum gallium nitride into close proximity, but less than a mole fraction of aluminum that would render the aluminum gallium nitride layer resistive.
摘要翻译： 公开了一种降低碳化硅和III族氮化物层之间的界面上的正向电压的结构。 该结构包括在碳化硅衬底上的导电碳化硅衬底和氮化铝铝的导电层。 氮化铝铝层具有足以使碳化硅衬底和氮化铝镓的导带紧密接近但小于使氮化镓铝层具有电阻的铝的摩尔分数的摩尔分数 。
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10.发明授权Composite substrates of conductive and insulating or semi-insulating group III-nitrides for group III-nitride devices 有权用于III族氮化物器件的导电和绝缘或半绝缘III族氮化物的复合衬底公开(公告)号：US07626217B2
公开(公告)日：2009-12-01
申请号：US11103127
申请日：2005-04-11
申请人： Adam William Saxler
发明人： Adam William Saxler
IPC分类号： H01L29/12 , H01L21/338
CPC分类号： H01L29/66462 , H01L29/2003 , H01L29/7787
摘要： Group III-Nitride semiconductor device structures and methods of fabricating Group III-Nitride structures are provided that include an electrically conductive Group III-Nitride substrate, such as a GaN substrate, and a semi-insulating or insulating Group III-Nitride epitaxial layer, such as a GaN epitaxial layer, on the electrically conductive Group III-Nitride substrate. The Group III-Nitride epitaxial layer has a lattice constant that is and a composition that may be substantially the same as a composition and a lattice constant of the Group III-Nitride substrate.
摘要翻译： 提供III族氮化物半导体器件结构和制造III族氮化物结构的方法，其包括导电III族氮化物衬底，例如GaN衬底，以及半绝缘或绝缘的III-III族氮化物外延层， 作为GaN外延层，在导电III-III族氮化物衬底上。 III族氮化物外延层的晶格常数为与III族氮化物衬底的组成和晶格常数基本相同的组成。
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