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    Apparatus and methods for managing reliability of semiconductor devices
    1.
    发明授权
    Apparatus and methods for managing reliability of semiconductor devices 有权
    用于管理半导体器件的可靠性的装置和方法

    公开(公告)号：US06813572B2

    公开(公告)日：2004-11-02

    申请号：US10281432

    申请日：2002-10-24

    申请人： Akella V.S. Satya ,  Li Song ,  Robert Thomas Long ,  Kurt H. Weiner

    发明人： Akella V.S. Satya ,  Li Song ,  Robert Thomas Long ,  Kurt H. Weiner

    IPC分类号： G06F1900

    CPC分类号： G01R31/287 ,  G01R31/2831 ,  G01R31/2856 ,  G01R31/2858 ,  G01R31/2894

    摘要： Disclosed are methods and apparatus for determining whether to perform burn-in on a semiconductor product, such as a product wafer or product wafer lot. In general terms, test structures on the semiconductor product are inspected to extract yield information, such as defect densities. Since this yield information is related to the early or extrinsic instantaneous failure rate, one may then determine the instantaneous extrinsic failure rate for one or more failure mechanisms, such as electromigration, gate oxide breakdown, or hot carrier injection, based on this yield information. It is then determined whether to perform burn-in on the semiconductor product based on the determined instantaneous failure rate.

    摘要翻译： 公开了用于确定是否对诸如产品晶片或产品晶片批次的半导体产品进行老化的方法和装置。 通常，检查半导体产品上的测试结构以提取诸如缺陷密度的产量信息。 由于该产量信息与早期或非本征瞬时故障率相关，因此可以基于该产量信息来确定一个或多个故障机制的瞬时外在故障率，例如电迁移，栅极氧化物分解或热载流子注入。 然后，根据所确定的瞬时故障率，确定是否对半导体产品进行老化。

    MULTIPLE DIRECTIONAL SCANS OF TEST STRUCTURES ON SEMICONDUCTOR INTEGRATED CIRCUITS
    2.
    发明申请
    MULTIPLE DIRECTIONAL SCANS OF TEST STRUCTURES ON SEMICONDUCTOR INTEGRATED CIRCUITS 有权
    半导体集成电路测试结构的多个方向扫描

    公开(公告)号：US20080237487A1

    公开(公告)日：2008-10-02

    申请号：US11675013

    申请日：2007-02-14

    申请人： Gustavo A. Pinto ,  Brian C. Leslie ,  David L. Adler ,  Akella V.S. Satya ,  Robert Thomas Long ,  David J. Walker ,  Padma A. Satya

    发明人： Gustavo A. Pinto ,  Brian C. Leslie ,  David L. Adler ,  Akella V.S. Satya ,  Robert Thomas Long ,  David J. Walker ,  Padma A. Satya

    IPC分类号： G21G5/00

    CPC分类号： H01L23/5226 ,  H01L22/34 ,  H01L2924/0002 ,  H01L2924/00

    摘要： Disclosed is a method of inspecting a sample. The sample is scanned in a first direction with at least one particle beam. The sample is scanned in a second direction with at least one particle beam. The second direction is at an angle to the first direction. The number of defects per an area of the sample are found as a result of the first scan, and the position of one or more of the found defects is determined from the second scan. In a specific embodiment, the sample includes a test structure having a plurality of test elements thereon. A first portion of the test elements is exposed to the beam during the first scan to identify test elements having defects, and a second portion of the test elements is exposed during the second scan to isolate and characterize the defect.

    摘要翻译： 公开了一种检查样品的方法。 用至少一个粒子束沿第一方向扫描样品。 用至少一个粒子束在第二个方向上扫描样品。 第二方向与第一方向成一个角度。 作为第一扫描的结果，发现样品的每个区域的缺陷数，并且从第二次扫描确定发现的一个或多个缺陷的位置。 在具体实施例中，样本包括其上具有多个测试元件的测试结构。 测试元件的第一部分在第一次扫描期间暴露于光束以识别具有缺陷的测试元件，并且第二部分测试元件在第二次扫描期间暴露以分离和表征缺陷。