公开(公告)号：US07862737B2

公开(公告)日：2011-01-04

申请号：US11837189

申请日：2007-08-10

申请人： Akifumi Kamijima ,  Hideyuki Yatsu ,  Hitoshi Hatate

发明人： Akifumi Kamijima ,  Hideyuki Yatsu ,  Hitoshi Hatate

IPC分类号： C03C15/00 ,  C03C25/68

CPC分类号： G03F7/2026 ,  G03F7/00 ,  G11B5/3163

摘要： Provided is a planarizing method in which a planarization with high flatness can be performed, without being restricted by the distribution of film thickness in the applied resist film. The planarizing method comprises the steps of: forming a resist film on a film to be planarized formed on a substrate; exposing the resist film with the amounts of exposure light in respective sections into which an area in which the film to be planarized is formed is divided, the amounts of exposure light being determined so as to realize film thicknesses to be left for planarization of the resist film in the respective sections; developing the exposed resist film, to form a resist film pattern with a controlled distribution of film thickness; and etching the resist film pattern and the film to be planarized, until eliminating the thickness amounts to be eliminated of the film to be planarized.

摘要翻译： 提供一种平面化方法，其中可以进行具有高平坦度的平坦化，而不受所施加的抗蚀剂膜中的膜厚度的分布的限制。 平面化方法包括以下步骤：在基板上形成的平坦化膜上形成抗蚀剂膜; 将形成有平坦化膜的区域的各个部分中的曝光量曝光在抗蚀剂膜上，确定曝光量以实现为了使抗蚀剂平坦化而留下的膜厚度 各部分电影; 显影曝光的抗蚀剂膜，以形成具有受控的膜厚分布的抗蚀剂膜图案; 并蚀刻抗蚀剂膜图案和待平坦化的膜，直到消除要平坦化的膜的厚度消除量。

公开(公告)号：US07782441B2

公开(公告)日：2010-08-24

申请号：US12025285

申请日：2008-02-04

申请人： Akifumi Kamijima ,  Hideyuki Yatsu ,  Hitoshi Hatate

发明人： Akifumi Kamijima ,  Hideyuki Yatsu ,  Hitoshi Hatate

IPC分类号： G03B27/68 ,  G03B27/42

CPC分类号： G03F7/7085 ,  G03F7/70616 ,  G03F7/70633 ,  G03F7/70783 ,  G03F9/7003

摘要： An alignment method of mask patterns includes forming a first layer by transferring a first mask pattern onto a wafer, forming a second layer by transferring a second mask pattern onto the first layer, and particularly a first alignment step, forming the first layer, which performs alignment for minimizing offset between a center position of the wafer and a center position of the first mask pattern and a residual rotation error between the wafer and the first mask pattern and additional alignment for compensating an amount of possible deviation of superposition of the second layer pattern on the first layer pattern, and a second alignment step, forming the second layer, which performs only alignment for minimizing offset between a center position of the first layer pattern and a center position of the second mask pattern and a residual rotation error between the first layer pattern and the second mask pattern.

摘要翻译： 掩模图案的对准方法包括通过将第一掩模图案转印到晶片上来形成第一层，通过将第二掩模图案转印到第一层上形成第二层，特别地，形成第一层，其形成第一层，其执行 用于最小化晶片的中心位置和第一掩模图案的中心位置之间的偏移的对准以及晶片和第一掩模图案之间的残余旋转误差以及用于补偿第二层图案的叠加的可能偏移量的附加对准 在第一层图案和第二对准步骤中，形成第二层，其仅执行对准以最小化第一层图案的中心位置和第二掩模图案的中心位置之间的偏移和第一层图案之间的残留旋转误差 层图案和第二掩模图案。

公开(公告)号：US07639451B2

公开(公告)日：2009-12-29

申请号：US11668820

申请日：2007-01-30

申请人： Hideyuki Yatsu ,  Akifumi Kamijima ,  Hitoshi Hatate ,  Tomoyuki Sasaki

发明人： Hideyuki Yatsu ,  Akifumi Kamijima ,  Hitoshi Hatate ,  Tomoyuki Sasaki

IPC分类号： G11B5/147

CPC分类号： G11B5/1278 ,  G11B5/3116

摘要： There is a thin-film magnetic head provided, which comprises a perpendicular recording head portion including a thin-film coil adapted to generate a magnetic flux, and a main magnetic pole layer that extends rearward from a recording medium opposite plane facing a recording medium and has a main magnetic pole adapted to release a magnetic flux produced at the thin-film coil toward the recording medium. A given concave groove form that is more constricted as the lower end draws nearer is provided at or near the flare point of the front end of the main magnetic pole, so that the flow of the magnetic flux through the main magnetic pole is focused on the upper end edge (gap portion), thereby improving overwrite performance and holding back the occurrence of pole erasure.

摘要翻译： 提供了一种薄膜磁头，其包括垂直记录头部分，该垂直记录头部分包括适于产生磁通量的薄膜线圈，以及从与记录介质相对的记录介质向后延伸的主磁极层，以及 具有适于将在薄膜线圈处产生的磁通朝向记录介质释放的主磁极。 在主磁极的前端的喇叭口处或附近设置由于下端越靠近而更加收缩的给定的凹槽形状，使得通过主磁极的磁通量的流动聚焦在 上端边缘（间隙部分），从而提高覆盖性能并阻止磁极擦除的发生。

公开(公告)号：US20090284719A1

公开(公告)日：2009-11-19

申请号：US12025285

申请日：2008-05-15

申请人： Akifumi KAMIJIMA ,  Hideyuki YATSU ,  Hitoshi HATATE

发明人： Akifumi KAMIJIMA ,  Hideyuki YATSU ,  Hitoshi HATATE

IPC分类号： G03B27/68 ,  G03B27/42

CPC分类号： G03F7/7085 ,  G03F7/70616 ,  G03F7/70633 ,  G03F7/70783 ,  G03F9/7003

摘要： An alignment method of mask patterns in patterning processes includes forming a first layer by transferring a first mask pattern onto a wafer or a layer formed on the wafer, and forming a second layer by transferring a second mask pattern onto the first layer. The method particularly includes a first alignment step of performing, when forming the first layer, alignment for minimizing offset between a center position of the wafer and a center position of the first mask pattern and a residual rotation error between the wafer and the first mask pattern, and alignment based on an amount of deviation of superposition of the second layer pattern on the first layer pattern. The deviation is caused by linear expansion and contraction of a wafer and caused by an orthogonal error between a wafer and a mask pattern, and also the deviation is obtained by measuring in advance in pattering processes successively performed for a plurality of wafers. The method also includes a second alignment step of performing, when forming the second layer, only alignment for minimizing offset between a center position of the first layer pattern and a center position of the second mask pattern and a residual rotation error between the first layer pattern and the second mask pattern.

摘要翻译： 图案化处理中的掩模图案的对准方法包括通过将第一掩模图案转印到晶片上或形成在晶片上的层来形成第一层，以及通过将第二掩模图案转印到第一层上而形成第二层。 该方法特别包括第一对准步骤，当形成第一层时，进行对准以最小化晶片的中心位置和第一掩模图案的中心位置之间的偏移和晶片与第一掩模图案之间的残余旋转误差 并且基于第一层图案上的第二层图案的叠加的偏移量进行对准。 该偏差是由晶片的线性膨胀和收缩引起的，并且由晶片和掩模图案之间的正交误差引起，并且通过在多个晶片中连续执行的图案处理中预先测量来获得偏差。 该方法还包括第二对准步骤，当形成第二层时，仅进行对准以最小化第一层图案的中心位置和第二掩模图案的中心位置之间的偏移和第一层图案之间的残余旋转误差 和第二掩模图案。

公开(公告)号：US20090039056A1

公开(公告)日：2009-02-12

申请号：US11837189

申请日：2007-08-10

申请人： Akifumi KAMIJIMA ,  Hideyuki YATSU ,  Hitoshi HATATE

发明人： Akifumi KAMIJIMA ,  Hideyuki YATSU ,  Hitoshi HATATE

IPC分类号： B44C1/22

CPC分类号： G03F7/2026 ,  G03F7/00 ,  G11B5/3163

摘要： Provided is a planarizing method in which a planarization with high flatness can be performed, without being restricted by the distribution of film thickness in the applied resist film. The planarizing method comprises the steps of: forming a resist film on a film to be planarized formed on a substrate; exposing the resist film with the amounts of exposure light in respective sections into which an area in which the film to be planarized is formed is divided, the amounts of exposure light being determined so as to realize film thicknesses to be left for planarization of the resist film in the respective sections; developing the exposed resist film, to form a resist film pattern with a controlled distribution of film thickness; and etching the resist film pattern and the film to be planarized, until eliminating the thickness amounts to be eliminated of the film to be planarized.

摘要翻译： 提供一种平面化方法，其中可以进行具有高平坦度的平坦化，而不受所施加的抗蚀剂膜中的膜厚度的分布的限制。 平面化方法包括以下步骤：在基板上形成的平坦化膜上形成抗蚀剂膜; 将形成有平坦化膜的区域的各个部分中的曝光量曝光在抗蚀剂膜上，曝光光的量被确定为实现用于平版化抗蚀剂的膜厚度 各部分电影; 显影曝光的抗蚀剂膜，以形成具有受控的膜厚分布的抗蚀剂膜图案; 并蚀刻抗蚀剂膜图案和待平坦化的膜，直到消除要平坦化的膜的厚度消除量。

公开(公告)号：US20090027809A1

公开(公告)日：2009-01-29

申请号：US11781606

申请日：2007-07-23

申请人： Akifumi KAMIJIMA ,  Hideyuki YATSU ,  Hitoshi HATATE ,  Hisayoshi WATANABE ,  Atsushi YAMAGUCHI ,  Shingo MIYATA ,  Masahiro SAITO

发明人： Akifumi KAMIJIMA ,  Hideyuki YATSU ,  Hitoshi HATATE ,  Hisayoshi WATANABE ,  Atsushi YAMAGUCHI ,  Shingo MIYATA ,  Masahiro SAITO

IPC分类号： G11B5/33 ,  G11B5/127

CPC分类号： G11B5/3909 ,  B82Y10/00 ,  B82Y25/00 ,  G11B5/3116 ,  G11B5/3912 ,  G11B5/3967 ,  G11B2005/3996

摘要： Provided is a thin-film magnetic head in which the concentration of magnetic flux in the shield layer and the magnetic pole layer is suppressed. The thin-film magnetic head comprises a plurality of magnetic layers that have front surfaces reaching a head end surface on the ABS side. Further in this head, at least one of the plurality of magnetic layers has a shape in which: each of edges corresponding to both side surfaces extends so as to spread obliquely rearward with each other from an end of a straight edge in a track width direction corresponding to the front surface; and the front surface reaching the head end surface has a shape in which upper and lower corner portions in each of both end portions in the track width direction form obtuse angles or rounded shapes.

摘要翻译： 提供了一种薄膜磁头，其中屏蔽层和磁极层中的磁通量的浓度被抑制。 薄膜磁头包括多个磁性层，其前表面到达ABS侧的头端面。 此外，在该头部中，多个磁性层中的至少一个具有以下形状：对应于两个侧表面的每个边缘沿着轨道宽度方向从直边缘的端部彼此倾斜地向后延伸 对应于前表面; 并且到达头端面的前表面具有这样的形状，其中在轨道宽度方向上的两个端部中的每一个中的上角部和下角部形成钝角或圆形。

公开(公告)号：US07477127B2

公开(公告)日：2009-01-13

申请号：US11237982

申请日：2005-09-29

申请人： Akifumi Kamijima

发明人： Akifumi Kamijima

IPC分类号： H01F27/30

CPC分类号： H01F41/041 ,  H01F17/0013 ,  H01F27/2804 ,  H01F27/323 ,  H01F41/046

摘要： In an electronic device, insulating layers (24, 26 and 28) on metal conductors (23 and 27) situated inside the device are formed of insulating layers made of a novolac resin, and an insulating layer made of a polyimide resin is used as an insulating layer (30) covering these insulating layers and exposed on the surface of the device. Development can be prevented in the case where a portion of each of the insulating layers (24, 26 and 28) is opened to expose a metal conductor, and rework can also be easily carried out. The use of an insulating layer made of a polyimide resin as the insulating layer (30) exposed on the surface of the device provides excellent weather resistance and reliability.

摘要翻译： 在电子设备中，位于设备内部的金属导体（23和27）上的绝缘层（24,26和28）由酚醛清漆树脂制成的绝缘层形成，并且使用由聚酰亚胺树脂制成的绝缘层作为 绝缘层（30），覆盖这些绝缘层并暴露在器件的表面上。 在绝缘层（24,26,28）的一部分被打开以露出金属导体的情况下，可以防止显影，也可以容易地进行返工。 使用由聚酰亚胺树脂制成的绝缘层作为暴露在器件表面上的绝缘层（30）提供优异的耐候性和可靠性。

公开(公告)号：US20080220366A1

公开(公告)日：2008-09-11

申请号：US11714737

申请日：2007-03-07

申请人： Hitoshi Hatate ,  Akifumi Kamijima

发明人： Hitoshi Hatate ,  Akifumi Kamijima

IPC分类号： G03C1/00 ,  G21G4/00

CPC分类号： H01L21/67115 ,  G03F7/42 ,  H01L21/0273 ,  Y10S438/906

摘要： A resist pattern processing apparatus comprises a stage for mounting a substrate having a patterned photoresist arranged on a surface thereof, a UV-emitting part for emitting UV rays to the stage, and an annular member for surrounding the whole periphery of the substrate. This allows the annular member to restrain ozone supplied near a mounting surface for the substrate on the stage from diffusing to the periphery of the stage, whereby the ozone concentration becomes even in the surface of the substrate mounted on the stage.

摘要翻译： 抗蚀剂图案处理装置包括用于安装具有布置在其表面上的图案化光致抗蚀剂的基板的台，用于向该台发射紫外线的UV发射部分和用于围绕基板的整个周边的环形部件。 这允许环形构件抑制在台面上的基板的安装面附近供应的臭氧扩散到台的周边，由此在安装在台架上的基板的表面上臭氧浓度变得均匀。

公开(公告)号：US20080190890A1

公开(公告)日：2008-08-14

申请号：US11674374

申请日：2007-02-13

申请人： Akifumi KAMIJIMA

发明人： Akifumi KAMIJIMA

IPC分类号： C23F1/00

CPC分类号： H01L21/32139 ,  H01L21/0273 ,  H01L21/0338

摘要： In the invention of this application, the resist pattern having a given pattern of opening concavity is formed on the component to be dry etched, the aqueous solution containing a water-soluble resin is filled in that opening concavity, and the filled aqueous solution containing a water-soluble resin is dried into a narrow shrunk resin at the middle of the opening concavity, whereby the mask of shrunk resin is formed. It is thus possible to form a micropattern much finer than determined by optical limits.

摘要翻译： 在本申请的发明中，在被干燥蚀刻的成分上形成具有规定图案的开口凹部的抗蚀剂图案，将含有水溶性树脂的水溶液填充到该开口凹部，填充的含有 水溶性树脂在开口凹部的中间被干燥成狭窄的收缩树脂，由此形成收缩树脂的掩模。 因此，可以形成比由光学限制确定的微细图案更精细。

公开(公告)号：US07311850B2

公开(公告)日：2007-12-25

申请号：US10271590

申请日：2002-10-17

申请人： Akifumi Kamijima ,  Yoichi Ishida ,  Koichi Terunuma

发明人： Akifumi Kamijima ,  Yoichi Ishida ,  Koichi Terunuma

IPC分类号： H01L21/027

CPC分类号： B82Y25/00 ,  B82Y40/00 ,  G11B5/3116 ,  G11B5/3163 ,  G11B5/3967 ,  H01F41/308 ,  Y10S438/947

摘要： In a method of forming a patterned thin film, first, an etching stopper film and a film to be patterned are formed in this order on a base layer. Next, a patterned first film is formed on the film to be patterned. Next, a second film is formed over an entire surface on top of the film to be patterned and the first film. Then, by removing the first film, an etching mask is obtained from the second film formed on the film to be patterned. The film to be patterned is selectively etched through dry etching using the etching mask. A patterned thin film having a groove is thereby obtained.

摘要翻译： 在形成图案化薄膜的方法中，首先，在基底层上依次形成蚀刻停止膜和待图案化的膜。 接下来，在待图案化的膜上形成图案化的第一膜。 接下来，在待图案化的膜的顶部和第一膜上的整个表面上形成第二膜。 然后，通过去除第一膜，从形成在待图案化的膜上的第二膜获得蚀刻掩模。 通过使用蚀刻掩模的干蚀刻来选择性地蚀刻待图案化的膜。 由此获得具有凹槽的图案化薄膜。