公开(公告)号：US5506178A

公开(公告)日：1996-04-09

申请号：US172167

申请日：1993-12-23

申请人： Atsushi Suzuki ,  Akihide Kashiwagi ,  Kazuhiko Tokunaga ,  Toshihiko Suzuki

发明人： Atsushi Suzuki ,  Akihide Kashiwagi ,  Kazuhiko Tokunaga ,  Toshihiko Suzuki

IPC分类号： H01L21/28 ,  H01L29/51 ,  H01L21/324

CPC分类号： H01L21/28185 ,  H01L29/51 ,  H01L21/28194 ,  H01L21/28211 ,  Y10S438/974

摘要： A process for forming a silicon oxide film comprising:(a) heat treating a semiconductor substrate at a temperature of 1,150.degree. C. or higher under a 100% hydrogen gas atmosphere for a period of 10 to 600 minutes; and(b) forming a silicon oxide film on the semiconductor substrate by wet oxidation, followed by heat treating said silicon oxide film under an inert gas atmosphere containing a halogen element.

摘要翻译： 一种形成氧化硅膜的方法，包括：（a）在100℃氢气气氛下在1150℃或更高的温度下对半导体衬底进行10至600分钟的时间热处理; 和（b）通过湿式氧化在半导体衬底上形成氧化硅膜，然后在含有卤素元素的惰性气体气氛下对所述氧化硅膜进行热处理。

公开(公告)号：US06797323B1

公开(公告)日：2004-09-28

申请号：US08979259

申请日：1997-11-26

申请人： Akihide Kashiwagi ,  Kazuhiko Tokunaga ,  Toshihiko Suzuki ,  Hideki Kimura ,  Toyotaka Kataoka ,  Atsushi Suzuki ,  Shinji Tanaka

发明人： Akihide Kashiwagi ,  Kazuhiko Tokunaga ,  Toshihiko Suzuki ,  Hideki Kimura ,  Toyotaka Kataoka ,  Atsushi Suzuki ,  Shinji Tanaka

IPC分类号： C23C1640

CPC分类号： H01L21/02238 ,  H01L21/02255 ,  H01L21/02337 ,  H01L21/31662

摘要： A method of forming a silicon oxide layer comprising initiating formation of a silicon oxide layer on a surface of a silicon layer by an oxidation method using wet gas at an ambient temperature at which no silicon atom is eliminated from the surface of the silicon layer, and then, forming the silicon oxide layer up to a predetermined thickness by an oxidation method using wet gas.

摘要翻译： 一种形成氧化硅层的方法，包括：在硅层的表面没有硅原子的环境温度下，通过使用湿气体的氧化法在硅层的表面上引发氧化硅层的形成，以及 然后，通过使用湿气的氧化法形成氧化硅层达预定厚度。

公开(公告)号：US06589349B2

公开(公告)日：2003-07-08

申请号：US09867001

申请日：2001-05-29

申请人： Akihide Kashiwagi ,  Toyotaka Kataoka ,  Toshihiko Suzuki

发明人： Akihide Kashiwagi ,  Toyotaka Kataoka ,  Toshihiko Suzuki

IPC分类号： C23L1600

CPC分类号： C30B29/06 ,  C23C8/02 ,  C23C8/16 ,  C30B33/005 ,  H01L21/31612

摘要： An apparatus for forming a silicon oxide film which has a process chamber and is for thermally oxidizing a surface of a silicon layer by introducing water vapor into the process chamber, and which further has dew-formation prevention/evaporation means for preventing dew formation in the process chamber and/or evaporating dew in the process chamber.

摘要翻译： 一种用于形成氧化硅膜的装置，其具有处理室，用于通过将水蒸气引入处理室来热氧化硅层的表面，并且还具有防止/蒸发装置，用于防止在 处理室和/或在处理室中蒸发出露水。

公开(公告)号：US06297172B1

公开(公告)日：2001-10-02

申请号：US09588238

申请日：2000-06-06

申请人： Akihide Kashiwagi

发明人： Akihide Kashiwagi

IPC分类号： H01L2102

CPC分类号： H01L21/02238 ,  H01L21/02255 ,  H01L21/02307 ,  H01L21/31662

摘要： A method of forming an oxide film comprising the steps of; (A) generating a water vapor atmosphere in a process chamber in a state where partitioning means is closed, and transferring a substrate into a substrate transfer portion, (B) opening the partitioning means after the transfer of the substrate into the substrate transfer portion is completed, and transferring the substrate into the process chamber having the water vapor atmosphere, (C) thermally oxidizing a semiconductor layer on the surface of the substrate in the process chamber having the water vapor atmosphere, to form an oxide film having a predetermined thickness on the surface of the semiconductor layer, and (D) changing the atmosphere in the process chamber into an inert gas atmosphere, then transferring the substrate out of the process chamber, closing the partitioning means and transferring the substrate out of the substrate transfer portion.

摘要翻译： 一种形成氧化膜的方法，包括以下步骤： （A）在分隔装置关闭的状态下在处理室中产生水蒸汽气氛，并将基板转移到基板转印部分中;（B）在将基板转印到基板转印部分之后打开分隔装置是 完成并将衬底转移到具有水蒸汽气氛的处理室中，（C）在具有水蒸汽气氛的处理室中热氧化衬底表面上的半导体层，以形成具有预定厚度的氧化膜 半导体层的表面和（D）将处理室中的气氛变成惰性气体气氛，然后将衬底转移出处理室，关闭分隔装置并将衬底转移出衬底转移部分。

公开(公告)号：US06239044B1

公开(公告)日：2001-05-29

申请号：US09322020

申请日：1999-05-28

申请人： Akihide Kashiwagi ,  Toyotaka Kataoka ,  Toshihiko Suzuki

发明人： Akihide Kashiwagi ,  Toyotaka Kataoka ,  Toshihiko Suzuki

IPC分类号： H01L2131

CPC分类号： C30B29/06 ,  C23C8/02 ,  C23C8/16 ,  C30B33/005 ,  H01L21/31612

摘要： An apparatus for forming a silicon oxide film which has a process chamber and is for thermally oxidizing a surface of a silicon layer by introducing water vapor into the process chamber, and which further has dew-formation prevention/evaporation means for preventing dew formation in the process chamber and/or evaporating dew in the process chamber.

公开(公告)号：US5854505A

公开(公告)日：1998-12-29

申请号：US804957

申请日：1997-02-24

申请人： Atsushi Suzuki ,  Akihide Kashiwagi ,  Kazuhiko Tokunaga ,  Toshihiko Suzuki

发明人： Atsushi Suzuki ,  Akihide Kashiwagi ,  Kazuhiko Tokunaga ,  Toshihiko Suzuki

IPC分类号： H01L21/28 ,  H01L29/51 ,  H01L29/76

CPC分类号： H01L21/28185 ,  H01L21/28194 ,  H01L21/28211 ,  H01L29/51

摘要： A process for forming a silicon oxide film comprising: (a) heat treating a semiconductor substrate at a temperature of 1,150.degree. C. or higher under a 100% hydrogen gas atmosphere for a period of 10 to 600 minutes; and (b) forming a silicon oxide film on the semiconductor substrate by wet oxidation, followed by heat treating said silicon oxide film under an inert gas atmosphere containing a halogen element.

摘要翻译： 一种形成氧化硅膜的方法，包括：（a）在100℃氢气气氛下在1150℃或更高的温度下对半导体衬底进行10至600分钟的时间热处理; 和（b）通过湿式氧化在半导体衬底上形成氧化硅膜，然后在含有卤素元素的惰性气体气氛下对所述氧化硅膜进行热处理。