公开(公告)号：US09112067B2

公开(公告)日：2015-08-18

申请号：US12766389

申请日：2010-04-23

申请人： Teruyuki Fujii ,  Kohei Ohshima ,  Junya Maruyama ,  Akihisa Shimomura

发明人： Teruyuki Fujii ,  Kohei Ohshima ,  Junya Maruyama ,  Akihisa Shimomura

IPC分类号： H01L31/0224 ,  H01L31/0296 ,  H01L31/02 ,  H01L31/028 ,  H01L31/068 ,  H01L31/075

CPC分类号： H01L31/022425 ,  H01L31/02008 ,  H01L31/028 ,  H01L31/0296 ,  H01L31/068 ,  H01L31/075 ,  Y02E10/50

摘要： An object relates to an electrode of a semiconductor device or a method for manufacturing a semiconductor device, which includes a bonding step, and problems are: (1) high resistance of a semiconductor device due to the use of an Al electrode, (2) formation of an alloy by Al and Si, (3) high resistance of a film formed by a sputtering method, and (4) defective bonding in a bonding step which is caused if a bonding surface has a large unevenness. A semiconductor device includes a metal substrate or a substrate provided with a metal film, a copper (Cu) plating film over and bonded to the metal substrate or the metal film by employing a thermocompression bonding method, a barrier film over the Cu plating film, a single crystal silicon film over the barrier film, and an electrode layer over the single crystal silicon film.

摘要翻译： 本发明涉及一种半导体器件的电极或半导体器件的制造方法，其包括接合工序，其问题是：（1）由于使用Al电极而导致的半导体器件的高电阻，（2） 通过Al和Si形成合金，（3）通过溅射法形成的膜的高电阻，以及（4）如果接合表面具有大的不平坦度时引起的接合步骤中的不良接合。 半导体装置包括金属基板或具有金属膜的金属基板，通过使用热压接法在金属基板或金属膜上结合的铜（Cu）电镀膜，在Cu镀膜上的阻挡膜， 阻挡膜上的单晶硅膜，以及单晶硅膜上的电极层。

公开(公告)号：US08895407B2

公开(公告)日：2014-11-25

申请号：US12891271

申请日：2010-09-27

申请人： Hidekazu Miyairi ,  Akihisa Shimomura ,  Tatsuya Mizoi ,  Eiji Higa ,  Yoji Nagano

发明人： Hidekazu Miyairi ,  Akihisa Shimomura ,  Tatsuya Mizoi ,  Eiji Higa ,  Yoji Nagano

IPC分类号： H01L21/46 ,  H01L21/762 ,  H01L27/12 ,  H01L51/00 ,  H01L29/786

CPC分类号： H01L27/1203 ,  H01L21/76254 ,  H01L27/1214 ,  H01L27/1266 ,  H01L29/78654 ,  H01L51/0027 ,  H01L2224/03552

摘要： A manufacturing method of an SOI substrate which possesses a base substrate having low heat resistance and a very thin semiconductor layer having high planarity is demonstrated. The method includes: implanting hydrogen ions into a semiconductor substrate to form an ion implantation layer; bonding the semiconductor substrate and a base substrate such as a glass substrate, placing a bonding layer therebetween; heating the substrates bonded to each other to separate the semiconductor substrate from the base substrate, leaving a thin semiconductor layer over the base substrate; irradiating the surface of the thin semiconductor layer with laser light to improve the planarity and recover the crystallinity of the thin semiconductor layer; and thinning the thin semiconductor layer. This method allows the formation of an SOI substrate which has a single-crystalline semiconductor layer with a thickness of 100 nm or less over a base substrate.

摘要翻译： 证明具有耐热性低的基底衬底和具有高平坦度的非常薄的半导体层的SOI衬底的制造方法。 该方法包括：将氢离子注入到半导体衬底中以形成离子注入层; 键合半导体衬底和诸如玻璃衬底的基底衬底，在其间放置结合层; 加热彼此接合的基板以将半导体基板与基底基板分离，在基底基板上留下薄的半导体层; 用激光照射薄半导体层的表面，以提高平坦度并恢复薄半导体层的结晶度; 并使薄半导体层变薄。 该方法允许在基底衬底上形成厚度为100nm以下的单晶半导体层的SOI衬底。

公开(公告)号：US08872021B2

公开(公告)日：2014-10-28

申请号：US12564991

申请日：2009-09-23

申请人： Sho Kato ,  Yoshikazu Hiura ,  Akihisa Shimomura ,  Takashi Ohtsuki ,  Satoshi Toriumi ,  Yasuyuki Arai

发明人： Sho Kato ,  Yoshikazu Hiura ,  Akihisa Shimomura ,  Takashi Ohtsuki ,  Satoshi Toriumi ,  Yasuyuki Arai

IPC分类号： H01L31/20 ,  H01L31/18 ,  H01L31/0256 ,  H01L31/0236 ,  H01L21/02 ,  H01L31/075 ,  H01L31/036

CPC分类号： H01L31/077 ,  H01L21/0237 ,  H01L21/02532 ,  H01L21/0262 ,  H01L21/02636 ,  H01L31/036 ,  H01L31/0376 ,  H01L31/075 ,  H01L31/1804 ,  H01L31/20 ,  Y02E10/547 ,  Y02E10/548 ,  Y02P70/521

摘要： An object is to increase conversion efficiency of a photoelectric conversion device without increase in the manufacturing steps. The photoelectric conversion device includes a first semiconductor layer formed using a single crystal semiconductor having one conductivity type which is formed over a supporting substrate, a buffer layer including a single crystal region and an amorphous region, a second semiconductor layer which includes a single crystal region and an amorphous region and is provided over the buffer layer, and a third semiconductor layer having a conductivity type opposite to the one conductivity type, which is provided over the second semiconductor layer. A proportion of the single crystal region is higher than that of the amorphous region on the first semiconductor layer side in the second semiconductor layer, and the proportion of the amorphous region is higher than that of the single crystal region on the third semiconductor layer side.

摘要翻译： 目的在于提高光电转换装置的转换效率，而不增加制造步骤。 光电转换装置包括使用在支撑基板上形成的具有一种导电类型的单晶半导体形成的第一半导体层，包括单晶区域和非晶区域的缓冲层，包括单晶区域的第二半导体层 和非晶区域，并且设置在所述缓冲层上，以及设置在所述第二半导体层上的具有与所述一种导电类型相反的导电类型的第三半导体层。 单晶区域的比例高于第二半导体层中的第一半导体层侧的非晶区域的比例，并且非晶区域的比例高于第三半导体层侧的单晶区域的比例。

公开(公告)号：US08828844B2

公开(公告)日：2014-09-09

申请号：US12247487

申请日：2008-10-08

申请人： Hideto Ohnuma ,  Tetsuya Kakehata ,  Akihisa Shimomura ,  Shinya Sasagawa ,  Motomu Kurata

发明人： Hideto Ohnuma ,  Tetsuya Kakehata ,  Akihisa Shimomura ,  Shinya Sasagawa ,  Motomu Kurata

IPC分类号： H01L21/46 ,  H01L21/268 ,  H01L21/3065 ,  H01L21/84 ,  H01L21/02 ,  H01L21/302 ,  H01L21/762

CPC分类号： H01L21/76254 ,  H01L21/02532 ,  H01L21/02686 ,  H01L21/268 ,  H01L21/302 ,  H01L21/3065 ,  H01L21/84

摘要： A damaged region is formed by generation of plasma by excitation of a source gas, and by addition of ion species contained in the plasma from one of surfaces of a single crystal semiconductor substrate; an insulating layer is formed over the other surface of the single crystal semiconductor substrate; a supporting substrate is firmly attached to the single crystal semiconductor substrate so as to face the single crystal semiconductor substrate with the insulating layer interposed therebetween; separation is performed at the damaged region into the supporting substrate to which a single crystal semiconductor layer is attached and part of the single crystal semiconductor substrate by heating of the single crystal semiconductor substrate; dry etching is performed on a surface of the single crystal semiconductor layer attached to the supporting substrate; the single crystal semiconductor layer is recrystallized by irradiation of the single crystal semiconductor layer with a laser beam to melt at least part of the single crystal semiconductor layer.

摘要翻译： 通过源气体的激发产生等离子体并通过从单晶半导体衬底的表面之一添加包含在等离子体中的离子种类而形成损伤区域; 在单晶半导体衬底的另一个表面上形成绝缘层; 支撑衬底牢固地附接到单晶半导体衬底，以便在其间插入绝缘层的单晶半导体衬底; 通过加热单晶半导体衬底，在损伤区域处分离成与单晶半导体层相连的支撑衬底和部分单晶半导体衬底; 在附着于支撑基板的单晶半导体层的表面进行干蚀刻， 通过用激光束照射单晶半导体层来使单晶半导体层重结晶，从而熔化至少一部分单晶半导体层。

公开(公告)号：US08772129B2

公开(公告)日：2014-07-08

申请号：US12891271

申请日：2010-09-27

申请人： Hidekazu Miyairi ,  Akihisa Shimomura ,  Tatsuya Mizoi ,  Eiji Higa ,  Yoji Nagano

发明人： Hidekazu Miyairi ,  Akihisa Shimomura ,  Tatsuya Mizoi ,  Eiji Higa ,  Yoji Nagano

IPC分类号： H01L21/46 ,  H01L21/762 ,  H01L27/12 ,  H01L51/00 ,  H01L29/786

摘要： A manufacturing method of an SOI substrate which possesses a base substrate having low heat resistance and a very thin semiconductor layer having high planarity is demonstrated. The method includes: implanting hydrogen ions into a semiconductor substrate to form an ion implantation layer; bonding the semiconductor substrate and a base substrate such as a glass substrate, placing a bonding layer therebetween; heating the substrates bonded to each other to separate the semiconductor substrate from the base substrate, leaving a thin semiconductor layer over the base substrate; irradiating the surface of the thin semiconductor layer with laser light to improve the planarity and recover the crystallinity of the thin semiconductor layer; and thinning the thin semiconductor layer. This method allows the formation of an SOI substrate which has a single-crystalline semiconductor layer with a thickness of 100 nm or less over a base substrate.

公开(公告)号：US08383487B2

公开(公告)日：2013-02-26

申请号：US13198171

申请日：2011-08-04

申请人： Hideomi Suzawa ,  Shinya Sasagawa ,  Akihisa Shimomura ,  Junpei Momo ,  Motomu Kurata ,  Taiga Muraoka ,  Kosei Nei

发明人： Hideomi Suzawa ,  Shinya Sasagawa ,  Akihisa Shimomura ,  Junpei Momo ,  Motomu Kurata ,  Taiga Muraoka ,  Kosei Nei

IPC分类号： H01L21/76

CPC分类号： H01L21/76254

摘要： Forming an insulating film on a surface of the single crystal semiconductor substrate, forming a fragile region in the single crystal semiconductor substrate by irradiating the single crystal semiconductor substrate with an ion beam through the insulating film, forming a bonding layer over the insulating film, bonding a supporting substrate to the single crystal semiconductor substrate by interposing the bonding layer between the supporting substrate and the single crystal semiconductor substrate, dividing the single crystal semiconductor substrate at the fragile region to separate the single crystal semiconductor substrate into a single crystal semiconductor layer attached to the supporting substrate, performing first dry etching treatment on a part of the fragile region remaining on the single crystal semiconductor layer, performing second dry etching treatment on a surface of the single crystal semiconductor layer subjected to the first etching treatment, and irradiating the single crystal semiconductor layer with laser light.

摘要翻译： 在单晶半导体基板的表面上形成绝缘膜，在单晶半导体基板中通过用离子束照射单晶半导体基板通过绝缘膜形成脆性区域，在绝缘膜上形成接合层， 通过将支撑基板和单晶半导体基板之间的接合层插入到单晶半导体基板的支撑基板上，将单晶半导体基板分割为脆性区域，将单晶半导体基板分离成单晶半导体层， 所述支撑基板对残留在所述单晶半导体层上的所述易碎区域的一部分进行第一干蚀刻处理，对经过所述第一蚀刻处理的所述单晶半导体层的表面进行第二干蚀刻处理， 具有激光的晶体半导体层。

公开(公告)号：US08349705B2

公开(公告)日：2013-01-08

申请号：US13187754

申请日：2011-07-21

申请人： Akihisa Shimomura ,  Tatsuya Mizoi ,  Hidekazu Miyairi ,  Koichiro Tanaka

发明人： Akihisa Shimomura ,  Tatsuya Mizoi ,  Hidekazu Miyairi ,  Koichiro Tanaka

IPC分类号： H01L21/76

CPC分类号： H01L27/1266 ,  H01L21/02002 ,  H01L21/02038 ,  H01L21/3043 ,  H01L21/76254 ,  H01L27/1214 ,  H01L29/66772 ,  H01L51/5206 ,  H01L2251/554

摘要： To provide a method of manufacturing a semiconductor device in which the space between semiconductor films transferred at plural locations is narrowed. A first bonding substrate having first projections is attached to a base substrate. Then, the first bonding substrate is separated at the first projections so that first semiconductor films are formed over the base substrate. Next, a second bonding substrate having second projections is attached to the base substrate so that the second projections are placed in regions different from regions where the first semiconductor films are formed. Subsequently, the second bonding substrate is separated at the second projections so that second semiconductor films are formed over the base substrate. In the second bonding substrate, the width of each second projection in a direction (a depth direction) perpendicular to the second bonding substrate is larger than the film thickness of each first semiconductor film formed first.

公开(公告)号：US20120286312A1

公开(公告)日：2012-11-15

申请号：US13467166

申请日：2012-05-09

申请人： Kaoru HATANO ,  Akihiro Chida ,  Akihisa Shimomura ,  Shunpei Yamazaki

发明人： Kaoru HATANO ,  Akihiro Chida ,  Akihisa Shimomura ,  Shunpei Yamazaki

IPC分类号： H01L33/50

CPC分类号： H01L27/3246 ,  H01L51/0024 ,  H01L51/003 ,  H01L51/525 ,  H01L51/56

摘要： An object is to provide a method for manufacturing a light-emitting device including a flexible substrate, in which separation is performed without separation at the interface between the light-emitting layer and the electrode. A spacer formed of a light absorbing material which absorbs laser light is formed over a partition of one of substrates, a coloring layer is formed over the other substrate, and the substrates are bonded to each other with the use of a bonding layer. The light-emitting layer and the electrode which are formed over the spacer are irradiated with laser light through the coloring layer, so that at least the bonding layer among the light-emitting layer, the electrode, the coloring layer, and the bonding layer is melted to form a fixed portion where the bonding layer and the spacer are bonded by welding.

摘要翻译： 本发明的目的是提供一种制造包括柔性基板的发光装置的方法，其中在发光层和电极之间的界面处进行分离而不分离。 由吸收激光的吸光材料形成的间隔物形成在一个基板的隔板上，在另一个基板上形成着色层，并且通过使用接合层将基板彼此接合。 通过着色层，用激光照射在间隔物上形成的发光层和电极，使得至少发光层，电极，着色层和接合层的结合层为 熔化以形成固定部分，其中粘合层和间隔物通过焊接结合。

公开(公告)号：US08242002B2

公开(公告)日：2012-08-14

申请号：US13222076

申请日：2011-08-31

申请人： Akihisa Shimomura ,  Hidekazu Miyairi ,  Yasuhiro Jinbo

发明人： Akihisa Shimomura ,  Hidekazu Miyairi ,  Yasuhiro Jinbo

IPC分类号： H01L21/20

CPC分类号： H01L21/02678 ,  B23K26/0732 ,  B23K26/0738 ,  H01L21/02422 ,  H01L21/02532 ,  H01L21/02686 ,  H01L21/268 ,  H01L27/1218 ,  H01L27/1285

摘要： A layer including a semiconductor film is formed over a glass substrate and is heated. A thermal expansion coefficient of the glass substrate is greater than 6×10−7/° C. and less than or equal to 38×10−7/° C. The heated layer including the semiconductor film is irradiated with a pulsed ultraviolet laser beam having a width of less than or equal to 100 μm, a ratio of width to length of 1:500 or more, and a full width at half maximum of the laser beam profile of less than or equal to 50 μm, so that a crystalline semiconductor film is formed. As the layer including the semiconductor film formed over the glass substrate, a layer whose total stress after heating is −500 N/m to +50 N/m, inclusive is formed.

摘要翻译： 在玻璃基板上形成包含半导体膜的层，并加热。 玻璃基板的热膨胀系数大于6×10-7 /℃，小于或等于38×10-7 /℃。包含半导体膜的加热层用脉冲紫外激光束 具有小于或等于100μm的宽度，宽度与长度的比为1:500或更大，激光束轮廓的全宽度小于或等于50μm，使得结晶 形成半导体膜。 作为包含在玻璃基板上形成的半导体膜的层，形成加热后的总应力为-500N / m以上且+ 50N / m以下的层。

公开(公告)号：US08017508B2

公开(公告)日：2011-09-13

申请号：US12887597

申请日：2010-09-22

申请人： Akihisa Shimomura ,  Hidekazu Miyairi ,  Yasuhiro Jinbo

发明人： Akihisa Shimomura ,  Hidekazu Miyairi ,  Yasuhiro Jinbo

IPC分类号： H01L21/20

CPC分类号： H01L21/02678 ,  B23K26/0732 ,  B23K26/0738 ,  H01L21/02422 ,  H01L21/02532 ,  H01L21/02686 ,  H01L21/268 ,  H01L27/1218 ,  H01L27/1285

摘要： A layer including a semiconductor film is formed over a glass substrate and is heated. A thermal expansion coefficient of the glass substrate is greater than 6×10−7/° C. and less than or equal to 38×10−7/° C. The heated layer including the semiconductor film is irradiated with a pulsed ultraviolet laser beam having a width of less than or equal to 100 μm, a ratio of width to length of 1:500 or more, and a full width at half maximum of the laser beam profile of less than or equal to 50 μm, so that a crystalline semiconductor film is formed. As the layer including the semiconductor film formed over the glass substrate, a layer whose total stress after heating is −500 N/m to +50 N/m, inclusive is formed.

摘要翻译： 在玻璃基板上形成包含半导体膜的层，并加热。 玻璃基板的热膨胀系数大于6×10-7 /℃，小于或等于38×10-7 /℃。包含半导体膜的加热层用脉冲紫外激光束 具有小于或等于100μm的宽度，宽度与长度的比为1:500或更大，激光束轮廓的全宽度小于或等于50μm，使得结晶 形成半导体膜。 作为包含在玻璃基板上形成的半导体膜的层，形成加热后的总应力为-500N / m以上且+ 50N / m以下的层。