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1.发明授权Chemically amplified positive resist composition for EB or EUV lithography and patterning process 有权用于EB或EUV光刻和图案化工艺的化学放大的正性抗蚀剂组合物公开(公告)号：US08426108B2
公开(公告)日：2013-04-23
申请号：US13027356
申请日：2011-02-15
CPC分类号： G03F7/0392 , G03F7/0395 , G03F7/0397
摘要： A chemically amplified positive resist composition for EB or EUV lithography is provided comprising (A) a polymer or a blend of polymers wherein a film of the polymer or polymer blend is insoluble in alkaline developer, but turns soluble under the action of acid, (B) an acid generator, (C) a basic compound, and (D) a solvent. The basic compound (C) is a polymer comprising recurring units bearing a side chain having a secondary or tertiary amine structure as a basic active site and constitutes a part or the entirety of the polymer or polymers as component (A).
摘要翻译： 提供了用于EB或EUV光刻的化学放大型正性抗蚀剂组合物，其包含（A）聚合物或聚合物共混物，其中聚合物或聚合物共混物的膜不溶于碱性显影剂，但在酸的作用下变得可溶，（B ）酸产生剂，（C）碱性化合物和（D）溶剂。 碱性化合物（C）是包含具有作为碱性活性位点的具有仲胺结构或叔胺结构的侧链的重复单元并且构成作为组分（A）的聚合物或聚合物的一部分或全部的聚合物。
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2.发明申请CHEMICALLY AMPLIFIED NEGATIVE RESIST COMPOSITION FOR EB OR EUV LITHOGRAPHY AND PATTERNING PROCESS 有权用于EB或EUV光刻和图案处理的化学放大耐负荷组合物公开(公告)号：US20110200942A1
公开(公告)日：2011-08-18
申请号：US13027446
申请日：2011-02-15
CPC分类号： G03F7/0382 , G03F7/038
摘要： A chemically amplified negative resist composition is provided comprising (A) an alkali-soluble polymer, (B) an acid generator, and (C) a nitrogen-containing compound as a basic component, the polymer (A) turning alkali insoluble under the catalysis of acid. A basic polymer having a secondary or tertiary amine structure on a side chain serves as components (A) and (C). Processing the negative resist composition by EB or EUV lithography process may form a fine size resist pattern with advantages including uniform diffusion of base, improved LER, controlled deactivation of acid at the substrate interface, and a reduced degree of undercut.
摘要翻译： 提供一种化学放大型负性抗蚀剂组合物，其包含（A）碱溶性聚合物，（B）酸产生剂和（C）含氮化合物作为碱性成分，所述聚合物（A）在催化下使碱不溶 的酸。 在侧链上具有仲胺结构或叔胺结构的基本聚合物用作组分（A）和（C）。 通过EB或EUV光刻工艺处理负光刻胶组合物可形成精细尺寸的抗蚀剂图案，其优点包括碱的均匀扩散，改进的LER，在底物界面处控制的酸的失活，以及降低的底切度。
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公开(公告)号：US20110003251A1
公开(公告)日：2011-01-06
申请号：US12786013
申请日：2010-05-24
CPC分类号： G03F7/0395 , G03F7/0397
摘要： The present invention relates to a positive resist composition and to a pattern forming process using the same. The present invention provides: a positive resist composition having an enhanced etching resistance and an excellent resolution and being capable of providing an excellent pattern profile even at a substrate-side boundary face of resist, in photolithography for fine processing, and particularly in lithography adopting, as an exposure source, KrF laser, extreme ultraviolet rays, electron beam, X-rays, or the like; and a pattern forming process utilizing the positive resist composition.
摘要翻译： 本发明涉及正性抗蚀剂组合物和使用其的图案形成方法。 本发明提供：具有增强的抗蚀刻性和优异分辨率的正型抗蚀剂组合物，并且即使在抗蚀剂的基板侧边界面，也能够在光刻中进行精细加工，并且特别是在光刻中， 作为曝光源，KrF激光，极紫外线，电子束，X射线等; 以及利用正性抗蚀剂组合物的图案形成工艺。
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公开(公告)号：US20100261123A1
公开(公告)日：2010-10-14
申请号：US12756587
申请日：2010-04-08
IPC分类号： G03F7/20
CPC分类号： G03F7/0382 , G03F7/0048 , G03F7/0392 , G03F7/40
摘要： In a chemically amplified resist composition comprising a base resin, an acid generator, and a solvent, 1,400-5,000 pbw of the solvent is present per 100 pbw of the base resin, and the solvent comprises at least 60 wt % of PGMEA and ethyl lactate, and 0.2-20 wt % of a high-boiling solvent. A resist pattern is formed by coating the resist composition on a substrate, prebaking, patternwise exposure, post-exposure baking, development, and heat treatment.
摘要翻译： 在包含基础树脂，酸产生剂和溶剂的化学放大型抗蚀剂组合物中，每100pbw的基础树脂存在1,400-5,000pbw的溶剂，溶剂包含至少60wt％的PGMEA和乳酸乙酯 ，和0.2-20重量％的高沸点溶剂。 通过将抗蚀剂组合物涂布在基材上，预烘烤，图案曝光，曝光后烘烤，显影和热处理来形成抗蚀剂图案。
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5.发明申请公开(公告)号：US20080241751A1
公开(公告)日：2008-10-02
申请号：US12058967
申请日：2008-03-31
申请人： Takanobu TAKEDA , Tamotsu WATANABE , Ryuji KOITABASHI , Keiichi MASUNAGA , Akinobu TANAKA , Osamu WATANABE
发明人： Takanobu TAKEDA , Tamotsu WATANABE , Ryuji KOITABASHI , Keiichi MASUNAGA , Akinobu TANAKA , Osamu WATANABE
CPC分类号： G03F7/0382 , G03F7/20
摘要： A chemically amplified negative resist composition comprises a polymer comprising recurring hydroxystyrene units and recurring styrene units having electron withdrawing groups substituted thereon. In forming a pattern having a fine feature size of less than 0.1 μm, the composition exhibits a high resolution in that a resist coating formed from the composition can be processed into such a fine size pattern while the formation of bridges between pattern features is minimized.
摘要翻译： 化学放大型负性抗蚀剂组合物包含含有重复的羟基苯乙烯单元的聚合物和在其上取代吸电子基团的重复苯乙烯单元。 在形成具有小于0.1μm的细小特征尺寸的图案时，组合物表现出高分辨率，因为由组合物形成的抗蚀剂涂层可以加工成这样的精细尺寸图案，同时使图案特征之间的桥接形成最小化。
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公开(公告)号：US06841334B2
公开(公告)日：2005-01-11
申请号：US10683107
申请日：2003-10-10
申请人： Fujio Yagihashi , Tomoyoshi Furihata , Jun Watanabe , Akinobu Tanaka , Yoshio Kawai , Tadahito Matsuda
发明人： Fujio Yagihashi , Tomoyoshi Furihata , Jun Watanabe , Akinobu Tanaka , Yoshio Kawai , Tadahito Matsuda
IPC分类号： C07C381/12 , C08K5/36 , C08L25/00 , C08L25/18 , G03F7/004 , G03F7/029 , G03F7/039 , H01L21/027 , H01L21/30 , G03F7/038
CPC分类号： G03F7/039 , C07C381/12 , G03F7/0045 , Y10S430/106 , Y10S430/115
摘要： Disclosed are novel onium salts represented by general formula (R)3S+M, wherein three R's may be the same or different, each being an aryl group, provided that at least one of R's is a t-alkoxy substituted phenyl group, and M is an anion capable of forming the sulfonium salts; and high energy radiation-responsive positive resist materials using said novel onium salts as acid generator.
摘要翻译： 公开了由通式（R）3S + M表示的新型鎓盐，其中三个R可以相同或不同，各自为芳基，条件是R的至少一个为叔烷氧基取代的苯基， M是能形成锍盐的阴离子; 和使用所述新型鎓盐作为酸发生剂的高能辐射响应正抗蚀材料。
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公开(公告)号：US5612170A
公开(公告)日：1997-03-18
申请号：US569659
申请日：1995-12-08
申请人： Katsuya Takemura , Junji Tsuchiya , Toshinobu Ishihara , Akinobu Tanaka , Yoshio Kawai , Jiro Nakamura
发明人： Katsuya Takemura , Junji Tsuchiya , Toshinobu Ishihara , Akinobu Tanaka , Yoshio Kawai , Jiro Nakamura
CPC分类号： G03F7/0045 , G03F7/0755 , G03F7/0757 , Y10S430/115 , Y10S430/122
摘要： A positive resist composition based on a silicone polymer contains a photo acid generator which will decompose to generate an acid upon exposure to radiation. The silicone polymer includes hydroxybenzyl units wherein some OH groups are replaced by t-butoxycarbonyl, t-butoxycarbonylmethyl, trimethylsilyl or tetrahydropyranyl groups. In a first form, the photo acid generator is a specific onium salt having at least one phenyl group with a t-alkoxy, t-butoxycarbonyloxy or t-butoxycarbonylmethoxy substituent. In a second form, the composition further contains a nitrogenous compound. In a third form, the composition further contains a dissolution inhibitor in the form of a specific silicone compound. The composition is sensitive to high energy radiation and has high sensitivity and resolution.
摘要翻译： 基于有机硅聚合物的正型抗蚀剂组合物含有光致酸产生剂，其将在暴露于辐射时分解产生酸。 有机硅聚合物包括其中一些OH基被叔丁氧基羰基，叔丁氧基羰基甲基，三甲基甲硅烷基或四氢吡喃基代替的羟基苄基单元。 在第一种形式中，光酸产生剂是具有至少一个具有叔烷氧基，叔丁氧基羰基氧基或叔丁氧基羰基甲氧基取代基的苯基的特定鎓盐。 在第二种形式中，组合物还含有含氮化合物。 在第三种形式中，组合物还含有特定硅氧烷化合物形式的溶解抑制剂。 该成分对高能辐射敏感，灵敏度高，分辨率高。
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公开(公告)号：US5290899A
公开(公告)日：1994-03-01
申请号：US952140
申请日：1992-09-28
申请人： Akinobu Tanaka , Masazumi Hasegawa
发明人： Akinobu Tanaka , Masazumi Hasegawa
CPC分类号： C08G77/24 , C08G77/06 , C08G77/26 , G03F7/0757
摘要： A silicon-containing polymer comprising repeating units of silicon-containing cyclic compound, represented by a general formula (I) ##STR1## (wherein m and n are zero or a positive integer, respectively, however m+n>0, and X is any of an alkyl group, alkoxy group, phenyl group, naphthyl group, substituted phenyl group and substituted naphthyl group or a mixture of these, and the substituent of said substituted phenyl group or substituted naphthyl group indicates any of halogen atom, halogenated alkyl group, amino group, aminoalkyl group and nitro group or a mixture of these), and a photosensitive material containing said silicon-containing polymer are disclosed.
摘要翻译： 含有由通式（I）（* CHEMICAL STRUCTURE *）（I）表示的含硅环状化合物的重复单元的含硅聚合物（其中m和n分别为零或正整数，但m + n > 0，X是烷基，烷氧基，苯基，萘基，取代的苯基和取代的萘基中的任何一种或它们的混合物，所述取代的苯基或取代的萘基的取代基表示卤素 原子，卤代烷基，氨基，氨基烷基和硝基或这些的混合物），以及含有所述含硅聚合物的感光材料。
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公开(公告)号：US5057396A
公开(公告)日：1991-10-15
申请号：US410573
申请日：1989-09-21
申请人： Akinobu Tanaka , Masazumi Hasegawa
发明人： Akinobu Tanaka , Masazumi Hasegawa
CPC分类号： G03F7/0757 , C08G77/06 , C08G77/24 , C08G77/26
摘要： A silicon-containing polymer comprising repeating units of silicon-containing cyclic compound, represented by a general formula (I) ##STR1## (wehrein m and n are positive integers including 0, respectively, however m+n>0, and X is any of alkyl group, alkoxy group, phenyl group, naphthyl group, substituted phenyl group and substituted naphthyl group or a mixture of these, and the substituent of said substituted phenyl group or substituted naphthyl group indicates any of halogen atom, halogenated alkyl group, amino group, aminoalkyl group and nitro group or a mixture of these), and a photosensitive material containing said silicon-containing polymer are disclosed.
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公开(公告)号：US4564579A
公开(公告)日：1986-01-14
申请号：US680739
申请日：1984-12-12
CPC分类号： G03F7/094 , C08G77/20 , C08G77/24 , G03F7/0757
摘要： A pattern forming material contains a siloxane polymer having the general formula: ##STR1## [wherein R, R' and R" are the same or different and are respectively one member selected from hydrogen, an alkyl group or a phenyl group; X is one member selected from fluorine, chlorine, bromine, iodine and a --CH.sub.2 Y group (wherein Y is one member selected from chlorine, fluorine, bromine, iodine, an acryloyloxy group, a methacryloyloxy group, and a cinnamoyloxy group); and l, m and n are respectively 0 or a positive integer, l and m not being simultaneously 0]. The material has a high sensitivity to high-energy radiation, a high contrast, and an excellent resistance to reactive ion etching under oxygen gas. The material is conveniently used as a negative resist for forming a submicron pattern having a high aspect ratio.
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