公开(公告)号：US20120090647A1

公开(公告)日：2012-04-19

申请号：US13336729

申请日：2011-12-23

申请人： Katsuhiko MIYA ,  Akira Izumi

发明人： Katsuhiko MIYA ,  Akira Izumi

IPC分类号： B08B3/04

CPC分类号： H01L21/67051 ,  H01L21/67028 ,  Y10S134/902

摘要： A rinsing liquid (DIW) is discharged from a rinsing liquid discharge port formed in a blocking member to perform rinsing processing to a substrate surface while a nitrogen gas is supplied into a clearance space, and a liquid mixture (IPA+DIW) is discharged from a liquid mixture discharge port formed in the blocking member to replace the rinsing liquid adhering to the substrate surface with the liquid mixture while the nitrogen gas is supplied into the clearance space. Thus, an increase of the dissolved oxygen concentration of the liquid mixture can be suppressed upon replacing the rinsing liquid adhering to the substrate surface with the liquid mixture, which makes it possible to securely prevent from forming an oxide film or generating watermarks on the substrate surface.

摘要翻译： 从形成在阻挡部件上的冲洗液体排出口排出冲洗液（DIW），在向间隙空间供给氮气的同时，向基板表面进行漂洗处理，并将液体混合物（IPA + DIW）从 形成在所述阻挡构件中的液体混合物排出口，以在将所述氮气供应到所述间隙空间中时，用所述液体混合物代替粘附到所述基板表面的冲洗液。 因此，当用液体混合物代替粘附到基板表面的冲洗液体时，可以抑制液体混合物的溶解氧浓度的增加，这使得可以可靠地防止在基板表面上形成氧化膜或产生水印 。

公开(公告)号：US07867337B2

公开(公告)日：2011-01-11

申请号：US11567452

申请日：2006-12-06

申请人： Akira Izumi

发明人： Akira Izumi

IPC分类号： B08B7/00 ,  B08B7/04

CPC分类号： B08B7/0014 ,  H01L21/02041 ,  H01L21/67051 ,  H01L21/67276 ,  H01L21/67742 ,  H01L21/67745 ,  Y10S134/902

摘要： A substrate having a liquid film formed by pre-processing unit is transported by a substrate transport robot from the pre-processing unit to a freeze processing unit disposed away from the pre-processing unit. In the freeze-processing unit, the liquid film is frozen. This causes the adhesion power of contaminants adhering to the surface of the substrate reduce, and therefore the contaminants is detached from the surface of the substrate. Subsequently, the substrate which was subjected to the freezing process, is transported from the freeze processing unit to a post-processing unit which is disposed away from the pre-processing unit and the freeze processing. In the post-processing unit, a cleaning liquid is supplied to the frozen film on the rotating substrate, thereby easily removing the contaminants adhering to the substrate together with the frozen film.

摘要翻译： 具有由预处理单元形成的液膜的基板通过基板传送机器人从预处理单元输送到远离预处理单元设置的冻结处理单元。 在冷冻处理单元中，液膜被冷冻。 这导致附着在基板表面的污染物的附着力降低，因此污染物从基板表面脱离。 随后，将经过冷冻处理的基板从冷冻处理单元输送到远离预处理单元并进行冷冻处理的后处理单元。 在后处理单元中，向旋转基板上的冷冻膜供给清洗液，从而容易地除去与冷冻膜一起附着在基板上的污染物。

公开(公告)号：US20080121251A1

公开(公告)日：2008-05-29

申请号：US11866457

申请日：2007-10-03

申请人： Katsuhiko Miya ,  Akira Izumi

发明人： Katsuhiko Miya ,  Akira Izumi

IPC分类号： B08B7/00

CPC分类号： H01L21/02057 ,  B08B7/0014 ,  H01L21/0209 ,  H01L21/67051 ,  Y10S134/902

摘要： A rinsing liquid supplier includes a temperature adjuster. The temperature adjuster cools DIW to a temperature lower than room temperature. This temperature adjuster cools down DIW to a temperature not more than 10 degrees centigrade for instance, and cooling down to an even lower temperature of 5 degrees centigrade or below is more preferable. Meanwhile, the temperature adjuster maintains DIW at not less than 0 degrees centigrade, which prevents freezing of the DIW. The cooled DIW supplied to a rinsing liquid pipe is discharged from the rinsing liquid discharge nozzle toward the top surface of the substrate, to thereby form a liquid film. Further, the cooled DIW is discharged toward the rear surface of the substrate from the liquid discharge nozzle via the liquid supply pipe, to thereby form the liquid film on the rear surface. Since the liquid films are already cooled, they are frozen in a short time when the cooling gas is discharged toward the top surface and the rear surface of the substrate.

摘要翻译： 冲洗液供应商包括温度调节器。 温度调节器将DIW冷却至低于室温的温度。 该温度调节器例如将DIW冷却至不高于10摄氏度的温度，并且更优选冷却至更低的5摄氏度或更低的温度。 同时，温度调节器将DIW维持在不低于摄氏0度，防止DIW冻结。 供给到冲洗液管的冷却的DIW从冲洗液体排出喷嘴朝向基板的上表面排出，从而形成液膜。 此外，冷却的DIW经由液体供给管从液体排出喷嘴朝向基板的后表面排出，从而在后表面上形成液膜。 由于液膜已经被冷却，所以当冷却气体朝向基板的顶表面和后表面排出时，它们在短时间内被冷冻。

公开(公告)号：US20080061402A1

公开(公告)日：2008-03-13

申请号：US11576323

申请日：2005-11-29

申请人： Masamichi Ishihara ,  Akira Izumi

发明人： Masamichi Ishihara ,  Akira Izumi

IPC分类号： H01L23/48 ,  H01L21/44

CPC分类号： H01L21/76898 ,  H01L23/3114 ,  H01L23/481 ,  H01L25/0657 ,  H01L25/50 ,  H01L2224/13025 ,  H01L2224/14181 ,  H01L2224/16145 ,  H01L2224/16225 ,  H01L2224/17181 ,  H01L2225/06513 ,  H01L2225/06517 ,  H01L2225/06527 ,  H01L2225/06541 ,  H01L2225/06572 ,  H01L2225/06575 ,  H01L2924/00011 ,  H01L2924/00014 ,  H01L2924/01004 ,  H01L2924/01019 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/01077 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/15311 ,  H01L2924/19041 ,  H01L2924/00 ,  H01L2224/48 ,  H01L2224/05599 ,  H01L2924/01005

摘要： The present invention provides a packaged stacked semiconductor device which includes bumps serving as external electrode terminals, the bumps being provided on both a front surface and a back surface of the device, and which is sacked on another semiconductor device, substrate, or board having electrode terminals so that the bumps are directly and electrically connected to the electrode terminals. The semiconductor device includes a semiconductor substrate having through-electrodes formed therein. The semiconductor device has, on the front surface side of the semiconductor substrate, a wiring layer connected to the through-electrodes, an insulating film formed on the wiring layer, additional wiring formed on the insulating film, post electrodes connected to the wiring, and external connection bumps connected to the post electrodes. The semiconductor device has, on the back surface side of the semiconductor substrate, an insulating film formed so as to cover the back surface of the semiconductor substrate, exclusive of tip end portions of the through-electrodes, wiring which is formed on the insulating film and to which the through-electrodes are connected, and external connection bumps connected to the wiring.

摘要翻译： 本发明提供了一种封装的堆叠半导体器件，其包括用作外部电极端子的凸块，该凸块设置在该器件的前表面和后表面上，并且被分解在另一半导体器件，衬底或具有电极的板上 端子，使得凸块直接和电连接到电极端子。 半导体器件包括其中形成有贯通电极的半导体衬底。 半导体装置在半导体基板的表面侧具有与贯通电极连接的布线层，形成在布线层上的绝缘膜，形成在绝缘膜上的附加布线，与布线连接的柱状电极，以及 连接到柱电极的外部连接凸块。 半导体装置在半导体基板的背面侧具有形成为覆盖半导体基板的背面的绝缘膜，不包括贯通电极的前端部，在绝缘膜上形成的布线 并且连接有贯通电极的外部连接凸点和与布线连接的外部连接凸块。

公开(公告)号：US20080060686A1

公开(公告)日：2008-03-13

申请号：US11837575

申请日：2007-08-13

申请人： Katsuhiko Miya ,  Naozumi Fujiwara ,  Akira IZUMI

发明人： Katsuhiko Miya ,  Naozumi Fujiwara ,  Akira IZUMI

IPC分类号： B08B5/00

CPC分类号： B08B7/0014 ,  H01L21/02052 ,  H01L21/02057 ,  H01L21/67051 ,  H01L21/67109 ,  Y10S134/902

摘要： A cooling gas is discharged from a cooling gas discharge nozzle toward a local section of a front surface of a substrate on which a liquid film is formed. And then the cooling gas discharge nozzle moves from a rotational center position of the substrate toward an edge position of the substrate along a moving trajectory while the substrate is rotated. As a result, of the surface region of the front surface of the substrate, an area where the liquid film has been frozen (frozen area) expands toward the periphery edge from the center of the front surface of the substrate. It is therefore possible to form a frozen film all over the front surface of the substrate while suppressing deterioration of the durability of the substrate peripheral members since a section receiving supply of the cooling gas is limited to a local area on the front surface of the substrate.

摘要翻译： 冷却气体从冷却气体排出喷嘴朝向其上形成有液膜的基板的前表面的局部部分排出。 然后冷却气体排出喷嘴在基板旋转的同时沿着移动轨迹从基板的旋转中心位置朝向基板的边缘位置移动。 结果，在基板的前表面的表面区域中，液膜已被冷冻的区域（冻结区域）从基板的前表面的中心朝向周边边缘扩展。 因此，可以在抑制基板周边部件的耐久性劣化的同时在基板的正面上形成冷冻膜，因为冷却气体的供应部分被限制在基板的正面的局部区域 。

公开(公告)号：US20070186970A1

公开(公告)日：2007-08-16

申请号：US10556063

申请日：2004-03-29

申请人： Masatoshi Takahashi ,  Hiroyuki Ohtsuka ,  Hideki Matsumura ,  Atsushi Masuda ,  Akira Izumi

发明人： Masatoshi Takahashi ,  Hiroyuki Ohtsuka ,  Hideki Matsumura ,  Atsushi Masuda ,  Akira Izumi

IPC分类号： H01L31/00

CPC分类号： H01L31/0682 ,  H01L31/02167 ,  H01L31/068 ,  H01L31/1804 ,  H01L31/1868 ,  Y02E10/547 ,  Y02P70/521

摘要： A solar cell (100) comprising a semiconductor solar cell substrate (66) having a light receiving surface formed on the first major surface and generating photovoltaic power based on the light impinging on the light receiving surface, wherein the light receiving surface of the semiconductor solar cell substrate (66) is coated with a light receiving surface side insulating film (61) composed of an inorganic insulating material where the cationic component principally comprising silicon, and the light receiving surface side insulating film (61) is a low hydrogen content inorganic insulating film containing less than 10 atm % of hydrogen. A solar cell having an insulating film exhibiting excellent passivation effect insusceptible to aging can thereby be provided.

摘要翻译： 一种太阳能电池（100），包括半导体太阳能电池基板（66），所述半导体太阳能电池基板具有形成在所述第一主表面上的受光面，并且基于照射到所述受光面的光产生光伏发电，其中，所述半导体太阳能 电池基板（66）涂覆有由主要由硅构成的阳离子成分的无机绝缘材料构成的受光面侧绝缘膜（61），受光面侧绝缘膜（61）为低含氢无机绝缘体 含有小于10atm％的氢的膜。 因此，可以提供具有显示优异的钝化作用的绝缘膜的太阳能电池。

公开(公告)号：US07017281B2

公开(公告)日：2006-03-28

申请号：US10634432

申请日：2003-08-05

申请人： Akira Izumi

发明人： Akira Izumi

IPC分类号： F26B21/00

CPC分类号： H01L21/67034 ,  Y10S134/902

摘要： A first gas nozzle and a second gas nozzle are fixedly provided in the vicinity of the forward end of a nozzle arm. The nozzle arm is rotated along a locus R while a substrate rinsed with deionized water is rotated, for discharging nitrogen gas from the first and second gas nozzles. Visible moisture is loosely expelled from the upper surface of the substrate by spraying the nitrogen gas from the first gas nozzle, and moisture slightly remaining on a fine pattern or the like can also be completely removed by spraying the nitrogen gas from the second gas nozzle to the same region of the substrate as that sprayed with the nitrogen gas by the first gas nozzle. Consequently, the surface of the substrate can be stably and reliably dried. Thus, a substrate processing apparatus capable of stably and reliably drying the surface of the substrate is provided.

公开(公告)号：US20050271985A1

公开(公告)日：2005-12-08

申请号：US11140451

申请日：2005-05-27

申请人： Katsuhiko Miya ,  Akira Izumi ,  Takuya Kishimoto

发明人： Katsuhiko Miya ,  Akira Izumi ,  Takuya Kishimoto

IPC分类号： C11D3/00 ,  C11D17/04 ,  H01L21/00

CPC分类号： H01L21/67086 ,  C11D17/041 ,  H01L21/6708

摘要： Nitrogen is dissolved in pure water and hydrochloric acid is mixed in this nitrogen-dissolved pure water, thereby creating as a rinsing liquid a mixture liquid whose pH is lower than that of pure water, and thus created rinsing liquid is supplied at nozzles 6 and 25 toward a substrate W. In the case of such a rinsing liquid, the dissolved oxygen concentration in the rinsing liquid is lowered, and it is possible to suppress a rapid increase of the dissolved oxygen concentration in the rinsing liquid as it is immediately after injected at the nozzles 6 and 25. Also suppressed is elution of Si from the surfaces of the substrate.

摘要翻译： 将氮溶解在纯水中，在该氮溶解的纯水中混合盐酸，从而产生pH值低于纯水的混合液作为漂洗液，由此产生的冲洗液在喷嘴6和25处供给 在这种漂洗液的情况下，冲洗液中的溶解氧浓度降低，并且可以抑制冲洗液中溶解氧浓度随注射后立即迅速增加 喷嘴6和25.还抑制了Si从基板的表面的洗脱。

公开(公告)号：US6077321A

公开(公告)日：2000-06-20

申请号：US966295

申请日：1997-11-07

申请人： Hideki Adachi ,  Akira Izumi

发明人： Hideki Adachi ,  Akira Izumi

IPC分类号： H01L21/00 ,  H01L21/677 ,  C23C14/00 ,  H01L21/64 ,  C23C9/00

CPC分类号： H01L21/67167 ,  H01L21/67028 ,  H01L21/6719 ,  H01L21/67196 ,  H01L21/67778 ,  Y10T29/41

摘要： A buffer chamber is provided between a transfer chamber and a cleaning/drying chamber, and completely-closable shutters are provided between the transfer chamber and the buffer chamber as well as between the buffer chamber and the cleaning/drying chamber. The cleaning/drying chamber serving as a composite processing part including a processing in the wet atmosphere is connected with the remaining chambers of dry atmospheres.

摘要翻译： 在转移室和清洁/干燥室之间设置有缓冲室，并且在转移室和缓冲室之间以及缓冲室和清洁/干燥室之间设置完全闭合的快门。 用作包括在湿气氛中的处理的复合处理部分的清洁/干燥室与其余的干燥气氛室连接。

公开(公告)号：USD418117S

公开(公告)日：1999-12-28

申请号：US93431

申请日：1998-09-10

申请人： Adam C. Wade ,  Hideto Iwamoto ,  Akira Izumi

设计人： Adam C. Wade ,  Hideto Iwamoto ,  Akira Izumi