公开(公告)号：US08349643B2

公开(公告)日：2013-01-08

申请号：US12987245

申请日：2011-01-10

申请人： Akira Terakawa

发明人： Akira Terakawa

IPC分类号： H01L21/00 ,  H01L31/00

CPC分类号： H01L31/20 ,  H01L31/0352 ,  H01L31/075 ,  H01L31/202 ,  Y02E10/548 ,  Y02P70/521

摘要： A photovoltaic device capable of improving an output characteristic is provided. The photovoltaic device includes an n-type single-crystal silicon substrate, a p-type amorphous silicon substrate, and a substantially intrinsic i-type amorphous silicon layer disposed between the n-type single-crystal silicon substrate and the p-type amorphous silicon layer. The i-type amorphous silicon layer includes: a first section which is located on the n-type single-crystal silicon substrate side, and which has an oxygen concentration equal to or below 1020 cm−3; and a second section which is located on the p-type amorphous silicon layer side, and which has an oxygen concentration equal to or above 1020 cm−3.

摘要翻译： 提供能够提高输出特性的光电装置。 光电器件包括n型单晶硅衬底，p型非晶硅衬底和设置在n型单晶硅衬底和p型非晶硅之间的基本上本征的i型非晶硅层 层。 i型非晶硅层包括：第一部分，其位于n型单晶硅衬底侧，氧浓度等于或低于1020cm-3; 以及第二部分，其位于p型非晶硅层侧，氧浓度等于或大于1020cm-3。

公开(公告)号：US20080261347A1

公开(公告)日：2008-10-23

申请号：US12105469

申请日：2008-04-18

申请人： Akira Terakawa ,  Toshio Asaumi

发明人： Akira Terakawa ,  Toshio Asaumi

IPC分类号： H01L21/00 ,  H01L21/3205

CPC分类号： H01L31/202 ,  C23C16/24 ,  C23C16/44 ,  C23C16/4408 ,  C23C16/45557 ,  H01L21/02532 ,  H01L21/0262 ,  H01L31/075 ,  Y02E10/548 ,  Y02P70/521

摘要： A method of manufacturing a semiconductor film capable of inhibiting the quality of a semiconductor film from destabilization is obtained. This method of manufacturing a semiconductor film includes steps of introducing source gas for a semiconductor, controlling the pressure of an atmosphere formed by the source gas to a prescribed level, heating a catalytic wire to at least a prescribed temperature after controlling the pressure of the atmosphere to the prescribed level and forming a semiconductor film by decomposing the source gas with the heated catalytic wire.

摘要翻译： 获得能够抑制半导体膜的质量不稳定的半导体膜的制造方法。 这种制造半导体膜的方法包括以下步骤：引入用于半导体的源气体，将由源气体形成的气氛的压力控制在规定水平，在控制大气压力之后将催化剂丝加热至规定温度 达到规定水平，并通过用加热的催化丝分解源气体来形成半导体膜。

公开(公告)号：US20080230121A1

公开(公告)日：2008-09-25

申请号：US12045247

申请日：2008-03-10

申请人： Akira TERAKAWA

发明人： Akira TERAKAWA

IPC分类号： H01L31/0256 ,  H01L31/18

CPC分类号： H01L31/20 ,  H01L31/0352 ,  H01L31/075 ,  H01L31/202 ,  Y02E10/548 ,  Y02P70/521

摘要： A photovoltaic device capable of improving an output characteristic is provided. The photovoltaic device includes an n-type single-crystal silicon substrate, a p-type amorphous silicon substrate, and a substantially intrinsic i-type amorphous silicon layer disposed between the n-type single-crystal silicon substrate and the p-type amorphous silicon layer. The i-type amorphous silicon layer includes: a first section which is located on the n-type single-crystal silicon substrate side, and which has an oxygen concentration equal to or below 1020 cm−3; and a second section which is located on the p-type amorphous silicon layer side, and which has an oxygen concentration equal to or above 1020 cm−3.

摘要翻译： 提供能够提高输出特性的光电装置。 光电器件包括n型单晶硅衬底，p型非晶硅衬底和设置在n型单晶硅衬底和p型非晶硅之间的基本上本征的i型非晶硅层 层。 i型非晶硅层包括：位于n型单晶硅衬底侧的第一部分，其氧浓度等于或低于20℃， -3 ; 以及第二部分，其位于p型非晶硅层侧，并且其氧浓度等于或高于20℃至30℃。

公开(公告)号：USRE45872E1

公开(公告)日：2016-01-26

申请号：US13592613

申请日：2012-08-23

申请人： Akira Terakawa ,  Toshio Asaumi

发明人： Akira Terakawa ,  Toshio Asaumi

IPC分类号： H01L25/00 ,  H01L31/0747 ,  H01L31/0224 ,  H01L31/0352

CPC分类号： H01L31/0747 ,  H01L31/022466 ,  H01L31/035272 ,  Y02E10/50

摘要： In a photovoltaic cell, an i-type amorphous silicon film and an n-type amorphous silicon film are formed in a region excluding a predetermined width of an outer periphery on a main surface of an n-type single crystalline silicon substrate. A front electrode is formed so as to cover the i-type amorphous silicon film and the n-type amorphous silicon film on a main surface of the n-type single crystalline silicon substrate. An i-type amorphous silicon film and a p-type amorphous silicon film are formed on the entire area of a back surface of the n-type single crystalline silicon substrate. A back electrode is formed in a region excluding a predetermined width of an outer periphery on the p-type amorphous silicon film. A surface, on the side of the front electrode, of the photovoltaic cell is a primary light incidence surface.

摘要翻译： 在光电池中，在n型单晶硅衬底的主表面上除了外周的预定宽度的区域中形成i型非晶硅膜和n型非晶硅膜。 形成前电极以覆盖n型单晶硅衬底的主表面上的i型非晶硅膜和n型非晶硅膜。 在n型单晶硅衬底的背面的整个区域上形成i型非晶硅膜和p型非晶硅膜。 在p型非晶硅膜的除外周的规定宽度以外的区域形成背面电极。 光伏电池的前电极一侧的表面是初级光入射面。

公开(公告)号：US20120299142A1

公开(公告)日：2012-11-29

申请号：US13558790

申请日：2012-07-26

申请人： Daiji KANEMATSU ,  Takeyuki SEKIMOTO ,  Shigeo YATA ,  Akira TERAKAWA

发明人： Daiji KANEMATSU ,  Takeyuki SEKIMOTO ,  Shigeo YATA ,  Akira TERAKAWA

IPC分类号： H01L31/0236

CPC分类号： H01L31/022483 ,  H01L31/02366 ,  H01L31/1888 ,  Y02E10/50

摘要： Disclosed is a photoelectric conversion device provided with transparent electrodes having high electric conductivity, low optical absorptance, and capable of obtaining a high light scattering effect. A first transparent electrode layer (22a), formed on the substrate (20) side, and a second transparent electrode layer (22b), formed at a position farther away from the substrate (20) than the first transparent electrode layer (22a) and having a density less than that of the first transparent electrode layer (22a), are formed as a transparent electrode layer (22), and a textured structure is provided.

摘要翻译： 公开了一种具有导电性高，光吸收率低的透明电极的光电转换装置，能够得到高散射效果。 形成在基板（20）侧的第一透明电极层（22a）和形成在比第一透明电极层（22a）更远离基板（20）的位置处的第二透明电极层（22b），以及 形成密度小于第一透明电极层（22a）的密度的透明电极层（22），并且提供纹理结构。

公开(公告)号：US07164150B2

公开(公告)日：2007-01-16

申请号：US10378609

申请日：2003-03-05

申请人： Akira Terakawa ,  Toshio Asaumi

发明人： Akira Terakawa ,  Toshio Asaumi

IPC分类号： H01L29/04 ,  H01L31/20

CPC分类号： H01L31/202 ,  H01L31/03762 ,  H01L31/0747 ,  H01L31/077 ,  Y02E10/548 ,  Y02P70/521

摘要： In a photovoltaic device of the present invention, junction characteristics are improved by enhancing interface characteristics between a crystalline silicon semiconductor and an amorphous silicon semiconductor. In the photovoltaic device, an n-type crystalline substrate (11) and a p-type amorphous silicon thin film (13) are laminated with an i-type amorphous silicon thin film (12) interposed as well as an n-type amorphous silicon thin film (15) is provided on a rear surface of the crystalline silicon substrate (11) by interposing an i-type amorphous silicon thin film (14) between them. Oxygen atoms exist at interfaces between the crystalline silicon substrate (11) and the i-type amorphous silicon thin films (12), (14) in a higher concentration than that in the i-type amorphous silicon thin films (12), (14).

摘要翻译： 在本发明的光电器件中，通过增加结晶硅半导体和非晶硅半导体之间的界面特性来提高结特征。 在光电器件中，n型晶体衬底（11）和p型非晶硅薄膜（13）与插入的i型非晶硅薄膜（12）以及n型非晶硅薄膜 通过在它们之间插入i型非晶硅薄膜（14），在晶体硅衬底（11）的后表面上设置薄膜（15）。 氧原子存在于晶体硅衬底（11）和i型非晶硅薄膜（12），（14）之间的界面处，其浓度高于i型非晶硅薄膜（12），（14） ）。

公开(公告)号：US06878921B2

公开(公告)日：2005-04-12

申请号：US10305262

申请日：2002-11-27

申请人： Mikio Taguchi ,  Toshio Asaumi ,  Akira Terakawa

发明人： Mikio Taguchi ,  Toshio Asaumi ,  Akira Terakawa

IPC分类号： C23C16/24 ,  H01L31/04 ,  H01L31/20 ,  H01L31/00

CPC分类号： H01L31/0747 ,  H01L31/075 ,  H01L31/202 ,  Y02E10/547 ,  Y02E10/548 ,  Y02P70/521

摘要： A photovoltaic device having a crystalline semiconductor and an amorphous semiconductor thin film so that junction characteristics can be upgraded. The photovoltaic device includes an i-type amorphous silicon thin film and a p-type amorphous silicon thin layer laminated in this order on a front surface of an n-type single crystalline silicon substrate, and an i-type amorphous silicon layer and an n-type amorphous silicon layer laminated in this order on a rear surface of the single crystalline silicon substrate, wherein an i-type amorphous silicon film is formed after the front surface of the single crystalline silicon substrate is exposed to a plasma discharge using mixed gas of hydrogen gas and a gas containing boron so that atoms of boron may be interposed on an interface between the single crystalline silicon substrate and the i-type amorphous silicon layer.

摘要翻译： 具有晶体半导体和非晶半导体薄膜的光电器件使得能够提高结特征。 光电器件包括在n型单晶硅衬底的正面上依次层叠的i型非晶硅薄膜和p型非晶硅薄膜，i型非晶硅层和n型 型非晶硅层按顺序层叠在单晶硅衬底的背面上，其中在单晶硅衬底的前表面暴露于等离子体放电之后，形成i型非晶硅膜，使用混合气体 氢气和含硼的气体，使得硼原子可插入在单晶硅衬底和i型非晶硅层之间的界面上。

公开(公告)号：US5262695A

公开(公告)日：1993-11-16

申请号：US823459

申请日：1992-01-22

申请人： Yukinori Kuwano ,  Masato Nishikuni ,  Shigeru Noguchi ,  Makoto Tanaka ,  Hiroyuki Kuriyama ,  Akira Terakawa ,  Noboru Nakamura ,  Shinya Tsuda ,  Takeo Tsutsumi ,  Hiroaki Izu ,  Yukio Nakashima

发明人： Yukinori Kuwano ,  Masato Nishikuni ,  Shigeru Noguchi ,  Makoto Tanaka ,  Hiroyuki Kuriyama ,  Akira Terakawa ,  Noboru Nakamura ,  Shinya Tsuda ,  Takeo Tsutsumi ,  Hiroaki Izu ,  Yukio Nakashima

IPC分类号： H02N1/00 ,  H01L41/08

CPC分类号： H02N1/004 ,  Y10S310/06

摘要： An electrostatic motor for use as a power generating mechanism to be mounted on a micromachine includes a rotatable semiconductor substrate and a drive electrode disposed in proximity to the substrate. The semiconductor substrate is doped with a specified impurity element to form electromagnetic wave-static electric converters of p-n junction. When the motor is to be started, the converter in the vicinity of the electrode is irradiated with electromagnetic waves to set up an electric field between the opposed surfaces of the converter and the electrode to rotate the substrate by an electrostatic force due to the electric field.

摘要翻译： 用作安装在微机械上的动力产生机构的静电电动机包括可旋转的半导体衬底和设置在衬底附近的驱动电极。 半导体衬底被掺杂有特定的杂质元素以形成p-n结的电磁波静电转换器。 当电动机起动时，用电磁波照射电极附近的转换器，以在转换器的相对表面和电极之间建立电场，以使由于电场的静电力使基板旋转 。

公开(公告)号：US08043885B2

公开(公告)日：2011-10-25

申请号：US12105469

申请日：2008-04-18

申请人： Akira Terakawa ,  Toshio Asaumi

发明人： Akira Terakawa ,  Toshio Asaumi

IPC分类号： H01L21/205

CPC分类号： H01L31/202 ,  C23C16/24 ,  C23C16/44 ,  C23C16/4408 ,  C23C16/45557 ,  H01L21/02532 ,  H01L21/0262 ,  H01L31/075 ,  Y02E10/548 ,  Y02P70/521

摘要： A method of manufacturing a semiconductor film capable of inhibiting the quality of a semiconductor film from destabilization is obtained. This method of manufacturing a semiconductor film includes steps of introducing source gas for a semiconductor, controlling the pressure of an atmosphere formed by the source gas to a prescribed level, heating a catalytic wire to at least a prescribed temperature after controlling the pressure of the atmosphere to the prescribed level and forming a semiconductor film by decomposing the source gas with the heated catalytic wire.

摘要翻译： 获得能够抑制半导体膜的质量不稳定的半导体膜的制造方法。 这种制造半导体膜的方法包括以下步骤：引入用于半导体的源气体，将由源气体形成的气氛的压力控制在规定水平，在控制大气压力之后将催化剂丝加热至规定温度 达到规定水平，并通过用加热的催化丝分解源气体来形成半导体膜。

公开(公告)号：US07863518B2

公开(公告)日：2011-01-04

申请号：US10793844

申请日：2004-03-08

申请人： Akira Terakawa ,  Toshio Asaumi

发明人： Akira Terakawa ,  Toshio Asaumi

IPC分类号： H01L31/00 ,  H01L31/04 ,  H01L31/075 ,  H01L31/20

CPC分类号： H01L31/03762 ,  H01L31/0745 ,  H01L31/0747 ,  H01L31/076 ,  H01L31/202 ,  Y02E10/547 ,  Y02E10/548 ,  Y02P70/521 ,  Y10T428/24917

摘要： A photovoltaic device capable of improving output characteristics is provided. This photovoltaic device comprises a crystalline semiconductor member, a substantially intrinsic first amorphous semiconductor layer formed on the front surface of the crystalline semiconductor member and a first conductivity type second amorphous semiconductor layer formed on the front surface of the first amorphous semiconductor layer, and has a hydrogen concentration peak in the first amorphous semiconductor layer. Thus, the quantity of hydrogen atoms in the first amorphous semiconductor layer is so increased that the hydrogen atoms increased in quantity can be bonded to dangling bonds of silicon atoms forming defects in the first amorphous semiconductor layer for inactivating the dangling bonds.

摘要翻译： 提供能够提高输出特性的光电器件。 该光电器件包括晶体半导体元件，形成在晶体半导体元件的前表面上的基本上本征的第一非晶半导体层和形成在第一非晶半导体层的前表面上的第一导电型第二非晶半导体层，并且具有 第一非晶半导体层中的氢浓度峰。 因此，第一非晶半导体层中的氢原子的量增加，使得能够将在第一非晶半导体层中形成缺陷的硅原子的悬挂键的数量增加的量键合到用于失活悬挂键的第一非晶半导体层中。