公开(公告)号：US08495528B2

公开(公告)日：2013-07-23

申请号：US12890854

申请日：2010-09-27

申请人： Saeed Bagheri ,  Kafai Lai ,  David O. Melville ,  Alan E. Rosenbluth ,  Kehan Tian ,  Jaione Tirapu Azpiroz

发明人： Saeed Bagheri ,  Kafai Lai ,  David O. Melville ,  Alan E. Rosenbluth ,  Kehan Tian ,  Jaione Tirapu Azpiroz

IPC分类号： G06F17/50

CPC分类号： G03F7/70466 ,  G03F1/70

摘要： A simplified version of a multiexpose mask optimization problem is solved in order to find a compressed space in which to search for the solution to the full problem formulation. The simplification is to reduce the full problem to an unconstrained formulation. The full problem of minimizing dark region intensity while maintaining intensity above threshold at each bright point can be converted to the unconstrained problem of minimizing average dark region intensity per unit of average intensity in the bright regions. The extrema solutions to the simplified problem can be obtained for each source. This set of extrema solutions is then assessed to determine which features are predominantly printed by which source. A minimal set of extrema solutions serves as a space of reduced dimensionality within which to maximize the primary objective under constraints. The space typically has reduced dimensionality through selection of highest quality extrema solutions.

摘要翻译： 解决了一个简化版本的多功能面罩优化问题，以便找到一个压缩空间，在该空间中搜索解决问题的全部问题。 简化是将完整的问题减少到无约束的公式。 将每个亮点处的强度保持在阈值以上的暗区强度最小化的问题可以转化为明亮区域每单位平均强度平均暗区强度最小化的无约束问题。 可以为每个源获得简化问题的极值解。 然后评估这组极值解决方案，以确定哪些特征主要由哪个来源打印。 最小的一组极值解决方案作为减小维数的空间，在这个空间内可以在约束条件下最大化主要目标。 该空间通常通过选择最高质量的极值解决方案降低维度。

公开(公告)号：US20130019211A1

公开(公告)日：2013-01-17

申请号：US13183070

申请日：2011-07-14

申请人： Masaharu Sakamoto ,  Alan E. Rosenbluth ,  Marc Alan Szeto-Millstone ,  Tadanobu Inoue ,  Kehan Tian ,  Andreas Waechter ,  Jonathan Lee ,  David Osmond Melville

发明人： Masaharu Sakamoto ,  Alan E. Rosenbluth ,  Marc Alan Szeto-Millstone ,  Tadanobu Inoue ,  Kehan Tian ,  Andreas Waechter ,  Jonathan Lee ,  David Osmond Melville

IPC分类号： G06F17/50

CPC分类号： G06F17/5081 ,  G06F2217/12 ,  Y02P90/265

摘要： Mask layout data of a lithographic mask includes polygons that each include horizontal and vertical edges. Each of a number of target edge pairs is defined by two edges of one or more of the polygons. A search box having a boundary coincident with a given edge of the edges of the polygons is specified. Whether the search box includes at least one edge of the edges of the polygons in addition to the given edge is determined. Where the search box includes at least one edge, at least one of the target edge pairs is specified as including the given edge and one of the at least one edge. For each target edge pair that has been specified, a manufacturability penalty value is determined. A dynamic manufacturability constraint table and a non-zero multiplier table are maintained.

摘要翻译： 光刻掩模的掩模布局数据包括各自包括水平和垂直边缘的多边形。 多个目标边对中的每一个由一个或多个多边形的两个边界定义。 指定具有与多边形的边缘的给定边缘重合的边界的搜索框。 确定搜索框是否包括除了给定边缘之外的多边形的边缘的至少一个边缘。 在搜索框包括至少一个边缘的情况下，目标边缘对中的至少一个被指定为包括给定边缘和至少一个边缘中的一个边缘。 对于已经指定的每个目标边对，确定可制造性惩罚值。 维持动态可制造性约束表和非零乘数表。

公开(公告)号：US08351037B2

公开(公告)日：2013-01-08

申请号：US12834379

申请日：2010-07-12

申请人： Jaione Tirapu Azpiroz ,  Saeed Bagheri ,  Kafai Lai ,  David O. Melville ,  Alan E. Rosenbluth ,  Kehan Tian

发明人： Jaione Tirapu Azpiroz ,  Saeed Bagheri ,  Kafai Lai ,  David O. Melville ,  Alan E. Rosenbluth ,  Kehan Tian

IPC分类号： G01B11/00

CPC分类号： G03F1/36 ,  G03F7/70116 ,  G03F7/70125 ,  G03F7/70525

摘要： Programmable illuminators in exposure tools are employed to increase the degree of freedom in tool matching. A tool matching methodology is provided that utilizes the fine adjustment of the individual source pixel intensity based on a linear programming (LP) problem subjected to user-specific constraints to minimize the difference of the lithographic wafer data between two tools. The lithographic data can be critical dimension differences from multiple targets and multiple process conditions. This LP problem can be modified to include a binary variable for matching sources using multi-scan exposure. The method can be applied to scenarios that the reference tool is a physical tool or a virtual ideal tool. In addition, this method can match different lithography systems, each including a tool and a mask.

摘要翻译： 使用曝光工具中的可编程照明器来增加刀具匹配的自由度。 提供了一种工具匹配方法，其利用基于用户特定约束的线性规划（LP）问题对各个源像素强度的精细调整，以最小化两种工具之间的平版印刷晶片数据的差异。 光刻数据可以是来自多个目标和多个工艺条件的关键尺寸差异。 该LP问题可以修改为包括使用多次扫描曝光来匹配源的二进制变量。 该方法可以应用于参考工具是物理工具或虚拟理想工具的场景。 此外，该方法可以匹配不同的光刻系统，每个包括工具和掩模。

公开(公告)号：US08125618B2

公开(公告)日：2012-02-28

申请号：US12208358

申请日：2008-09-11

申请人： Kafai Lai ,  Dirk Pfeiffer ,  Alan E. Rosenbluth

发明人： Kafai Lai ,  Dirk Pfeiffer ,  Alan E. Rosenbluth

IPC分类号： G03F7/20

CPC分类号： G03F7/70216

摘要： A system for exposing a resist layer to an image that includes a layer reflective to imaging tool radiation and a resist layer having a region of photosensitivity over the reflective layer. An imaging tool projects radiation containing an aerial image onto the resist layer, with a portion of the radiation containing the aerial image passing through the resist and reflecting back to the resist to form an interference pattern of the projected aerial image through the resist layer thickness. The thickness and location of the resist layer region of photosensitivity are selected to include from within the interference pattern higher contrast portions of the interference pattern in the direction of the resist thickness, and to exclude lower contrast portions of the interference pattern in the resist thickness direction from said resist layer region of photosensitivity, to improve contrast of the aerial image in said resist layer region of photosensitivity.

摘要翻译： 一种用于将抗蚀剂层暴露于包括反射成像工具辐射的层的图像和在反射层上具有光敏区域的抗蚀剂层的系统。 成像工具将包含空间图像的辐射投射到抗蚀剂层上，其中包含空间图像的辐射的一部分穿过抗蚀剂并反射回抗蚀剂，以形成通过抗蚀剂层厚度的投影空间图像的干涉图案。 光敏层的抗蚀剂层区域的厚度和位置被选择为在干涉图形之中包括在抗蚀剂厚度方向上的干涉图案的较高对比度部分，并且排除抗蚀剂厚度方向上的干涉图案的较低对比度部分 从所述抗蚀剂层区域的光敏性，改善所述抗蚀剂层区域中的空间像的光敏性的对比度。

公开(公告)号：US08078995B2

公开(公告)日：2011-12-13

申请号：US12349104

申请日：2009-01-06

申请人： Jaione Tirapu Azpiroz ,  Alan E. Rosenbluth ,  Ioana Graur

发明人： Jaione Tirapu Azpiroz ,  Alan E. Rosenbluth ,  Ioana Graur

IPC分类号： G06F17/50

CPC分类号： G03F7/70441 ,  G03F1/36 ,  G03F7/705

摘要： Modeling of lithographic processes for use in the design of photomasks for the manufacture of semiconductor integrated circuits, and particularly to the modeling of the complex effects due to interaction of the illuminating light with the mask topography, is provided. An isofield perturbation to a thin mask representation of the mask is provided by determining, for the components of the illumination, differences between the electric field on a feature edge having finite thickness and on the corresponding feature edge of a thin mask representation. An isofield perturbation is obtained from a weighted coherent combination of the differences for each illumination polarization. The electric field of a mask having topographic edges is represented by combining a thin mask representation with the isofield perturbation applied to each edge of the mask.

摘要翻译： 提供了用于制造半导体集成电路的光掩模设计中使用的光刻工艺的建模，特别是对由于照明光与掩模形貌的相互作用而引起的复杂影响的建模。 通过对于照明的组件，确定具有有限厚度的特征边缘上的电场与薄掩模表示的相应特征边缘之间的差异来提供对掩模的薄掩模表示的异场扰动。 从每个照明偏振的差的加权相干组合获得异场扰动。 通过将薄掩模表示与应用于掩模的每个边缘的异场扰动组合来表示具有形貌边缘的掩模的电场。

公开(公告)号：US08059884B2

公开(公告)日：2011-11-15

申请号：US11937073

申请日：2007-11-08

申请人： Maharaj Mukherjee ,  Ioana Graur ,  Alan E. Rosenbluth

发明人： Maharaj Mukherjee ,  Ioana Graur ,  Alan E. Rosenbluth

IPC分类号： G06K9/20

CPC分类号： G06K9/036 ,  G03F7/70441

摘要： Embodiments of the present invention provide a method of performing printability verification of a mask layout. The method includes creating one or more tight clusters; computing a set of process parameters associated with a point on said mask; comparing said set of process parameters to said one or more tight clusters; and reporting an error when at least one of said process parameters is away from said one or more tight clusters.

摘要翻译： 本发明的实施例提供了一种执行掩模布局的可印刷性验证的方法。 该方法包括创建一个或多个紧密簇; 计算与所述掩模上的点相关联的一组过程参数; 将所述一组过程参数与所述一个或多个紧密簇进行比较; 并且当至少一个所述过程参数远离所述一个或多个紧密簇时报告错误。

公开(公告)号：US20110239169A1

公开(公告)日：2011-09-29

申请号：US12748513

申请日：2010-03-29

申请人： Jaione Tirapu-Azpiroz ,  Timothy A. Brunner ,  Michael S. Hibbs ,  Alan E. Rosenbluth

发明人： Jaione Tirapu-Azpiroz ,  Timothy A. Brunner ,  Michael S. Hibbs ,  Alan E. Rosenbluth

IPC分类号： G06F17/50

CPC分类号： G03F1/38 ,  G03F1/70 ,  G03F7/70283 ,  G03F7/70441

摘要： A computer-implemented method is provided for generating an electromagnetic field (EMF) correction boundary layer (BL) model corresponding to a mask, which can include using a computer to perform a method, in which asymmetry factor data is determined from aerial image measurements of a plurality of different gratings representative of features provided on a mask, wherein the aerial image measurements having been made at a plurality of different focus settings. The method may also include determining boundary layer (BL) model parameters of an EMF correction BL model corresponding to the mask by fitting to the asymmetry factor measurements. Alternatively, the asymmetry factor data can be determined from measurements of line widths of photoresist patterns, wherein the photoresist patterns correspond to images cast by a plurality of gratings at a plurality of different defocus distances, and the gratings can be representative of features of a mask.

摘要翻译： 提供了一种计算机实现的方法，用于产生对应于掩模的电磁场（EMF）校正边界层（BL）模型，其可以包括使用计算机执行一种方法，其中由不确定因素数据从空间图像测量 代表提供在掩模上的特征的多个不同光栅，其中已经在多个不同焦点设置进行了空间图像测量。 该方法还可以包括通过拟合不对称因子测量来确定对应于掩模的EMF校正BL模型的边界层（BL）模型参数。 或者，可以通过对光致抗蚀剂图案的线宽度的测量来确定不对称因子数据，其中光致抗蚀剂图案对应于由多个不同散焦距离处的多个光栅投射的图像，并且光栅可以代表掩模的特征 。

公开(公告)号：US07975244B2

公开(公告)日：2011-07-05

申请号：US12019125

申请日：2008-01-24

申请人： Maharaj Mukherjee ,  James A. Culp ,  Alan E. Rosenbluth

发明人： Maharaj Mukherjee ,  James A. Culp ,  Alan E. Rosenbluth

IPC分类号： G06F17/50

CPC分类号： G03F1/36 ,  G03F1/44 ,  G03F1/68

摘要： A method is provided for designing a mask that includes the use of a pixel-based simulation of a lithographic process model, in which test structures are designed for determining numerical and discretization errors associated with the pixel grid as opposed to other model inaccuracies. The test structure has a plurality of rows of the same sequence of features, but each row is offset from other rows along an x-direction by a multiple of a minimum step size, such as used in modifying masks during optical proximity correction. The images for each row are simulated with a lithographic model that uses the selected pixel-grid size and the differences between row images are compared. If the differences between rows exceed or violate a predetermined criterion, the pixel grid size may be modified to minimize discretization and/or numerical errors due to the choice of pixel grid size.

摘要翻译： 提供了一种用于设计包括使用光刻处理模型的基于像素的仿真的掩模的方法，其中测试结构被设计用于确定与像素网格相关的数值和离散化误差，而不是其他模型不准确。 测试结构具有相同序列特征的多行，但是每一行都沿着x方向与其他行偏移最小步长的倍数，例如在光学邻近校正期间用于修改掩模。 使用所选择的像素网格大小的光刻模型来模拟每行的图像，并比较行图像之间的差异。 如果行之间的差异超过或违反预定标准，则可以修改像素网格大小以使由于像素网格大小的选择而导致的离散化和/或数值误差最小化。

公开(公告)号：US20100153902A1

公开(公告)日：2010-06-17

申请号：US12334485

申请日：2008-12-14

申请人： Tadanobu Inoue ,  David O. Melville ,  Hidemasa Muta ,  Kehan Tian ,  Masaharu Sakamoto ,  Alan E. Rosenbluth

发明人： Tadanobu Inoue ,  David O. Melville ,  Hidemasa Muta ,  Kehan Tian ,  Masaharu Sakamoto ,  Alan E. Rosenbluth

IPC分类号： G06F17/50

CPC分类号： G03F1/68 ,  G03F1/78

摘要： The manufacturability of a lithographic mask employed in fabricating instances of a semiconductor device is determined. Target edges are selected from mask layout data of the lithographic mask. The mask layout data includes polygons distributed over cells, where each polygon has edges. The cells include a center cell, two vertical cells above and below the center cell, and two horizontal cells to the left and right of the center cell. Target edge pairs are selected for determining a manufacturing penalty in making the lithographic mask, in a manner that decreases the computational volume in determining the manufacturing penalty. The manufacturability of the lithographic mask, including the manufacturing penalty in making the lithographic mask, is determined based on the target edge pairs selected. The manufacturability of the lithographic mask is output. The manufacturability of the lithographic mask is dependent on the manufacturing penalty in making the lithographic mask.

摘要翻译： 确定用于制造半导体器件的实例的光刻掩模的可制造性。 从光刻掩模的掩模布局数据中选择目标边缘。 掩模布局数据包括分布在单元格上的多边形，其中每个多边形具有边。 小区包括中心小区，中心小区上方和下方的两个垂直小区以及中心小区左侧和右侧的两个水平小区。 选择目标边对以确定在制作光刻掩模时的制造损失，以减小计算体积来确定制造损失。 基于所选择的目标边缘对来确定光刻掩模的可制造性，包括制造光刻掩模的制造损失。 输出光刻掩模的可制造性。 光刻掩模的可制造性取决于制造光刻掩模的制造损失。

公开(公告)号：US07736841B2

公开(公告)日：2010-06-15

申请号：US12233245

申请日：2008-09-18

申请人： Kafai Lai ,  Dirk Pfeiffer ,  Alan E. Rosenbluth

发明人： Kafai Lai ,  Dirk Pfeiffer ,  Alan E. Rosenbluth

IPC分类号： G03F7/26

CPC分类号： G03F7/70216

摘要： A method and system for exposing a resist layer with regions of photosensitivity to an image in a lithographic process using a high numerical aperture imaging tool. There is employed a substrate having thereover a layer reflective to the imaging tool radiation and a resist layer having a region of photosensitivity over the reflective layer, with the resist layer having a thickness. The imaging tool is adapted to project radiation containing an aerial image onto the resist layer, with a portion of the radiation containing the aerial image passing through the resist layer and reflecting back to the resist layer. The reflected radiation forms an interference pattern in the resist layer of the projected aerial image through the resist layer thickness. The thickness and location of the resist layer region of photosensitivity with respect to the reflective layer are selected to include from within the interference pattern higher contrast portions of the interference pattern in the direction of the resist thickness, and to exclude lower contrast portions of the interference pattern in the resist thickness direction from said resist layer region of photosensitivity, to improve contrast of the aerial image in said resist layer region of photosensitivity.

摘要翻译： 一种用于使用高数值孔径成像工具在光刻工艺中将抗蚀剂层暴露于对图像的光敏感区域的方法和系统。 采用具有反射成像工具辐射的层的基板和在反射层上具有光敏区域的抗蚀剂层，抗蚀剂层具有厚度。 成像工具适于将含有空间图像的辐射投射到抗蚀剂层上，其中包含空间图像的辐射的一部分穿过抗蚀剂层并反射回抗蚀剂层。 反射辐射通过抗蚀剂层厚度在投影空间图像的抗蚀剂层中形成干涉图案。 选择相对于反射层的光敏层的抗蚀剂层区域的厚度和位置，以便在干涉图形内包括在抗蚀剂厚度方向上的干涉图案的较高对比度部分，并且排除干涉图形的较低对比度部分 从抗蚀剂层区域的光敏剂厚度方向的图案，以提高光敏层的所述抗蚀剂层区域中的空间图像的对比度。