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20 条记录 (耗时 0.018 秒)

    Acoustic Wave Guide Device and Method for Minimizing Trimming Effects and Piston Mode Instabilities
    1.
    发明申请
    Acoustic Wave Guide Device and Method for Minimizing Trimming Effects and Piston Mode Instabilities 有权
    声波引导装置和最小化修剪效果和活塞模式不稳定性的方法

    公开(公告)号：US20120161577A1

    公开(公告)日：2012-06-28

    申请号：US13041653

    申请日：2011-03-07

    申请人： Benjamin P. Abbott ,  Robert Aigner ,  Alan S. Chen ,  Kevin Gamble ,  Julien Gratier ,  Taeho Kook ,  Marc Solal ,  Kurt G. Steiner

    发明人： Benjamin P. Abbott ,  Robert Aigner ,  Alan S. Chen ,  Kevin Gamble ,  Julien Gratier ,  Taeho Kook ,  Marc Solal ,  Kurt G. Steiner

    IPC分类号： H03H9/25 ,  H02K15/00 ,  H01L41/18

    CPC分类号： H03H9/02858 ,  H03H9/1452 ,  H03H9/1457 ,  Y10T29/42 ,  Y10T29/49009

    摘要： An acoustic wave device operable as a piston mode wave guide includes electrodes forming an interdigital transducer on a surface of the piezoelectric substrate, wherein each of the plurality of electrodes is defined as having a transversely extending center region and transversely opposing edge regions for guiding an acoustic wave longitudinally through the transducer. A Silicon Oxide overcoat covers the transducer and a Silicon Nitride layer covers the Silicon Oxide overcoat within only the center and edge regions. The thickness of the Silicon Nitride layer is sufficient for providing a frequency modification to the acoustic wave within the center region and is optimized with a positioning of a Titanium strip within each of the opposing edge regions. The Titanium strip reduces the acoustic wave velocity within the edge regions with the velocity in the edge regions being less than the wave velocity within the transducer center region.

    摘要翻译： 可用作活塞模式波导的声波装置包括在压电基板的表面上形成叉指式换能器的电极，其中多个电极中的每一个被限定为具有横向延伸的中心区域和横向相对的边缘区域，用于引导声学 通过传感器纵向波动。 氧化硅外涂层覆盖换能器，氮化硅层仅覆盖中心和边缘区域内的氧化硅外涂层。 氮化硅层的厚度足以对中心区域内的声波提供频率修正，并且通过在每个相对的边缘区域内定位钛带来优化。 钛带减少了边缘区域内的声波速度，边缘区域中的速度小于换能器中心区域内的波速。

    Method to improve writer leakage in a SiGe bipolar device
    4.
    发明授权
    Method to improve writer leakage in a SiGe bipolar device 有权
    改善SiGe双极器件写入器泄漏的方法

    公开(公告)号：US07557010B2

    公开(公告)日：2009-07-07

    申请号：US11673645

    申请日：2007-02-12

    申请人： Alan S. Chen ,  Mark Dyson ,  Nace M. Rossi ,  Ranbir Singh

    发明人： Alan S. Chen ,  Mark Dyson ,  Nace M. Rossi ,  Ranbir Singh

    IPC分类号： H01L21/20

    CPC分类号： H01L21/8249 ,  H01L27/0623 ,  H01L29/66242 ,  H01L29/66272 ,  H01L29/7378 ,  Y10S438/969

    摘要： The invention, in one aspect, provides a method for fabricating a semiconductor device, which includes conducting an etch through an opening in an emitter layer to form a cavity from an underlying oxide layer that exposes a doped tub. A first silicon/germanium (SiGe) layer, which has a Ge concentration therein, is formed within the cavity and over the doped tub by adjusting a process parameter to induce a strain in the first SiGe layer. A second SiGe layer is formed over the first SiGe layer, and a capping layer is formed over the second SiGe layer.

    摘要翻译： 本发明在一个方面提供了一种用于制造半导体器件的方法，其包括通过发射极层中的开口进行蚀刻以从暴露掺杂的皿的下面的氧化物层形成空腔。 通过调整工艺参数以在第一SiGe层中引起应变，在空腔内和掺杂槽之上形成其中具有Ge浓度的第一硅/锗（SiGe）层。 在第一SiGe层上形成第二SiGe层，并且在第二SiGe层上形成覆盖层。

    Temperature compensated surface acoustic wave device and method having buried interdigital transducers for providing an improved insertion loss and quality factor
    7.
    发明授权
    Temperature compensated surface acoustic wave device and method having buried interdigital transducers for providing an improved insertion loss and quality factor 有权
    温度补偿表面声波装置和方法具有埋入的叉指式换能器，用于提供改进的插入损耗和品质因素

    公开(公告)号：US08044553B2

    公开(公告)日：2011-10-25

    申请号：US12709772

    申请日：2010-02-22

    申请人： Alan S. Chen ,  Taeho Kook ,  Kurt G. Steiner ,  Stephen A. Neston ,  Timothy J. Daniel

    发明人： Alan S. Chen ,  Taeho Kook ,  Kurt G. Steiner ,  Stephen A. Neston ,  Timothy J. Daniel

    IPC分类号： H03H9/25 ,  H01L41/22

    CPC分类号： H03H3/08 ,  Y10T29/42

    摘要： A SAW device having metal electrodes on a surface of the piezoelectric substrate includes a dielectric layer deposited on the surface. Depositing the layer results in seams extending upward from the electrodes extending above the surface of the substrate. An additional seam results from one seam extending from one electrode joining a second seam extending from an adjacent electrode within the dielectric layer and is generally formed above the height of the electrodes. The additional seam is removed through planarization or the like. The dielectric layer may be further planarized for providing a thickness of the dielectric layer above the electrodes as desired.

    摘要翻译： 在压电基板的表面上具有金属电极的SAW器件包括沉积在表面上的电介质层。 沉积层导致从在衬底的表面上方延伸的电极向上延伸的接缝。 从一个电极延伸的一个接缝产生一个附加的接缝，该接缝从电介质层中的相邻电极延伸的第二接缝接合，并且通常形成在电极的高度之上。 通过平坦化等除去附加的接缝。 可以进一步平坦化介电层，以根据需要提供电极上方的电介质层的厚度。

    METHOD TO REDUCE BORON PENETRATION IN A SiGe BIPOLAR DEVICE
    8.
    发明申请
    METHOD TO REDUCE BORON PENETRATION IN A SiGe BIPOLAR DEVICE 审中-公开
    降低SiGe双极器件中硼孔渗透的方法

    公开(公告)号：US20090050977A1

    公开(公告)日：2009-02-26

    申请号：US12256677

    申请日：2008-10-23

    申请人： Alan S. Chen ,  Mark Dyson ,  Nace M. Rossi ,  Ranbir Singh ,  Xiaojun Yuan

    发明人： Alan S. Chen ,  Mark Dyson ,  Nace M. Rossi ,  Ranbir Singh ,  Xiaojun Yuan

    IPC分类号： H01L27/06

    CPC分类号： H01L29/7378 ,  H01L21/8249 ,  H01L27/0623 ,  H01L29/66242

    摘要： The invention, in one aspect, provides a method of manufacturing a semiconductor device. This aspect includes forming gate electrodes in a non-bipolar transistor region of a semiconductor substrate, placing a polysilicon layer over the gate electrodes in the non-bipolar transistor region and over the semiconductor substrate within a bipolar transistor region. A protective layer is formed over the polysilicon layer. The protective layer has a weight percent of hydrogen that is less than about 9% and is selective to silicon germanium (SiGe), such that SiGe does not form on the protective layer. This aspect further includes forming emitters for bipolar transistors in the bipolar transistor region, including forming a SiGe layer under a portion of the polysilicon layer.

    摘要翻译： 本发明在一个方面提供一种制造半导体器件的方法。 该方面包括在半导体衬底的非双极晶体管区域中形成栅电极，将多晶硅层放置在非双极晶体管区域中的栅电极之上，并在双极晶体管区域内的半导体衬底上。 在多晶硅层上形成保护层。 保护层具有小于约9％的氢的重量百分数，并且对硅锗（SiGe）是选择性的，使得SiGe不在保护层上形成。 该方面还包括在双极晶体管区域中形成用于双极晶体管的发射极，包括在多晶硅层的一部分下形成SiGe层。

    Method to Improve Performance of a Bipolar Device Using an Amorphizing Implant
    9.
    发明申请
    Method to Improve Performance of a Bipolar Device Using an Amorphizing Implant 有权
    使用非晶化植入物提高双极器件性能的方法

    公开(公告)号：US20080054406A1

    公开(公告)日：2008-03-06

    申请号：US11469032

    申请日：2006-08-31

    申请人： Alan S. Chen ,  Mark Dyson ,  Daniel C. Kerr ,  Nace M. Rossi

    发明人： Alan S. Chen ,  Mark Dyson ,  Daniel C. Kerr ,  Nace M. Rossi

    IPC分类号： H01L27/082

    CPC分类号： H01L21/8249 ,  H01L29/0821 ,  H01L29/732

    摘要： The invention, in one aspect, provides a semiconductor device that comprises a bipolar transistor located over and within a semiconductor substrate, a collector located within a tub of the bipolar transistor and having an amorphous region formed at least partially therein, a base located over the collector, and an emitter located over the base. There is also provided a method of fabricating the semiconductor device.

    摘要翻译： 本发明在一个方面提供了一种半导体器件，其包括位于半导体衬底之上和之内的双极晶体管，位于双极晶体管的桶内并具有至少部分形成在其中的非晶区域的集电体， 收集器和位于基座上方的发射器。 还提供了制造半导体器件的方法。

    Method to improve writer leakage in SiGe bipolar device
    10.
    发明授权
    Method to improve writer leakage in SiGe bipolar device 有权
    改善SiGe双极器件写入器泄漏的方法

    公开(公告)号：US07898038B2

    公开(公告)日：2011-03-01

    申请号：US12476994

    申请日：2009-06-02

    申请人： Alan S. Chen ,  Mark Dyson ,  Nace M. Rossi ,  Ranbir Singh

    发明人： Alan S. Chen ,  Mark Dyson ,  Nace M. Rossi ,  Ranbir Singh

    IPC分类号： H01L21/00

    CPC分类号： H01L21/8249 ,  H01L27/0623 ,  H01L29/66242 ,  H01L29/66272 ,  H01L29/7378 ,  Y10S438/969

    摘要： The invention, in one aspect, provides a method for fabricating a semiconductor device, which includes conducting an etch through an opening in an emitter layer to form a cavity from an underlying oxide layer that exposes a doped tub. A first silicon/germanium (SiGe) layer, which has a Ge concentration therein, is formed within the cavity and over the doped tub by adjusting a process parameter to induce a strain in the first SiGe layer. A second SiGe layer is formed over the first SiGe layer, and a capping layer is formed over the second SiGe layer.

    摘要翻译： 本发明在一个方面提供了一种用于制造半导体器件的方法，其包括通过发射极层中的开口进行蚀刻以从暴露掺杂的皿的下面的氧化物层形成空腔。 通过调整工艺参数以在第一SiGe层中引起应变，在空腔内和掺杂槽之上形成其中具有Ge浓度的第一硅/锗（SiGe）层。 在第一SiGe层上形成第二SiGe层，并且在第二SiGe层上形成覆盖层。