公开(公告)号：US4632294A

公开(公告)日：1986-12-30

申请号：US684823

申请日：1984-12-20

申请人： William O. Druschel ,  Alexander Kostenko ,  Rolf G. Meinert

发明人： William O. Druschel ,  Alexander Kostenko ,  Rolf G. Meinert

IPC分类号： H01L23/50 ,  B23K1/012 ,  B23K1/018 ,  H01R43/02 ,  H05K13/04 ,  B23K31/00

CPC分类号： H05K13/0404 ,  B23K1/012 ,  B23K1/018 ,  H05K13/0486 ,  B23K2201/40 ,  H01R43/02

摘要： The disclosure is directed to process and apparatus for the removal, site preparation, and replacement of any single connector pin contained within a sizeable array of closely spaced very small connector pins on an electronic packaging structure (substrate or module) without causing deleterious metallurgical effects either to the remaining pins or the ceramic substrate.

摘要翻译： 本公开涉及用于去除，现场准备和替换包含在电子封装结构（基板或模块）上的紧密间隔非常小的连接器针的相当大阵列中的任何单个连接器针的处理和装置，而不会引起有害的冶金效应 到剩余的引脚或陶瓷基板。

公开(公告)号：US5728222A

公开(公告)日：1998-03-17

申请号：US541278

申请日：1995-10-12

申请人： Steven George Barbee ,  Richard Anthony Conti ,  Alexander Kostenko ,  Narayana V. Sarma ,  Donald Leslie Wilson ,  Justin Wai-Chow Wong ,  Steven Paul Zuhoski

发明人： Steven George Barbee ,  Richard Anthony Conti ,  Alexander Kostenko ,  Narayana V. Sarma ,  Donald Leslie Wilson ,  Justin Wai-Chow Wong ,  Steven Paul Zuhoski

IPC分类号： C23C16/40 ,  C23C16/46 ,  C23C16/52 ,  H01L21/205 ,  H01L21/31 ,  B05C11/00

CPC分类号： C23C16/403 ,  C23C16/46 ,  C23C16/52

摘要： An apparatus in a chemical vapor deposition (CVD) system monitors the actual wafer/substrate temperature during the deposition process. The apparatus makes possible the production of high quality aluminum oxide films with real-time wafer/substrate control. An infrared (IR) temperature monitoring device is used to control the actual wafer temperature to the process temperature setpoint. This eliminates all atmospheric temperature probing. The need for test runs and monitor wafers as well as the resources required to perform the operations is eliminated and operating cost are reduced. High quality, uniform films of aluminum oxide can be deposited on a silicon substrates with no need for additional photolithographic steps to simulate conformality that are present in a sputtered (PVD) type application. The result is a reduction in required process steps with subsequent anticipated savings in equipment, cycle time, chemicals, reduce handling, and increased yield of devices on the substrate. The apparatus incorporates a heated source material, heated delivery lines, heated inert gas purge lines, a pressure differential mass flow controller, a control system with related valving, and a vacuum process chamber with walls that are temperature controlled as a complete source delivery system to accurately and repeatably provide source vapor for LPCVD deposition of aluminum oxide onto silicon substrates.

摘要翻译： 化学气相沉积（CVD）系统中的装置在沉积过程中监测实际的晶片/衬底温度。 该设备使得可以生产具有实时晶片/衬底控制的高品质氧化铝膜。 使用红外（IR）温度监测装置将实际晶片温度控制到过程温度设定值。 这消除了所有的大气温度探测。 测试运行和监视晶圆以及执行操作所需的资源的需求被消除，运行成本降低。 可以在硅衬底上沉积高质量均匀的氧化铝膜，而不需要额外的光刻步骤来模拟存在于溅射（PVD）型应用中的共形性。 结果是所需的工艺步骤减少，随后预期节省设备，循环时间，化学品，减少处理和提高基材上装置的产量。 该装置包括加热的源材料，加热的输送管线，加热的惰性气体吹扫管线，压差质量流量控制器，具有相关阀门的控制系统和具有作为完整源输送系统温度控制的壁的真空处理室 准确并重复地提供源蒸气，用于LPCVD在硅衬底上沉积氧化铝。

公开(公告)号：US5614247A

公开(公告)日：1997-03-25

申请号：US316303

申请日：1994-09-30

申请人： Steven G. Barbee ,  Richard A. Conti ,  Alexander Kostenko ,  Narayana V. Sarma ,  Donald L. Wilson ,  Justin W. Wong ,  Steven P. Zuhoski

发明人： Steven G. Barbee ,  Richard A. Conti ,  Alexander Kostenko ,  Narayana V. Sarma ,  Donald L. Wilson ,  Justin W. Wong ,  Steven P. Zuhoski

IPC分类号： C23C16/40 ,  C23C16/46 ,  C23C16/52 ,  H01L21/205 ,  H01L21/31

CPC分类号： C23C16/403 ,  C23C16/46 ,  C23C16/52

摘要： An apparatus in a chemical vapor deposition (CVD) system monitors the actual wafer/substrate temperature during the deposition process. The apparatus makes possible the production of high quality aluminum oxide films with real-time wafer/substrate control. An infrared (IR) temperature monitoring device is used to control the actual wafer temperature to the process temperature setpoint. This eliminates all atmospheric temperature probing. The need for test runs and monitor waters as well as the resources required to perform the operations is eliminated and operating cost are reduced. High quality, uniform films of aluminum oxide can be deposited on a silicon substrates with no need for additional photolithographic steps to simulate conformality that are present in a sputtered (PVD) type application. The result is a reduction in required process steps with subsequent anticipated savings in equipment, cycle time, chemicals, reduce handling, and increased yield of devices on the substrate. The apparatus incorporates a heated source material, heated delivery lines, heated inert gas purge lines, a pressure differential mass flow controller, a control system with related valving, and a vacuum process chamber with walls that are temperature controlled as a complete source delivery system to accurately and repeatably provide source vapor for LPCVD deposition of aluminum oxide onto silicon substrates.

摘要翻译： 化学气相沉积（CVD）系统中的装置在沉积过程中监测实际的晶片/衬底温度。 该设备使得可以生产具有实时晶片/衬底控制的高品质氧化铝膜。 使用红外（IR）温度监测装置将实际晶片温度控制到过程温度设定值。 这消除了所有的大气温度探测。 测试运行和监控水的需求以及执行操作所需的资源被消除，运行成本降低。 可以在硅衬底上沉积高质量均匀的氧化铝膜，而不需要额外的光刻步骤来模拟存在于溅射（PVD）型应用中的共形性。 结果是所需的工艺步骤减少，随后预期节省设备，循环时间，化学品，减少处理和提高基材上装置的产量。 该装置包括加热的源材料，加热的输送管线，加热的惰性气体吹扫管线，压差质量流量控制器，具有相关阀门的控制系统和具有作为完整源输送系统温度控制的壁的真空处理室 准确并重复地提供源蒸气，用于LPCVD在硅衬底上沉积氧化铝。