-
公开(公告)号：US20070097366A1
公开(公告)日：2007-05-03
申请号：US11262210
申请日：2005-10-31
IPC分类号： G01N21/00
CPC分类号： G01N21/6486 , G01N21/15 , G01N21/532 , G01N21/645
摘要： Embodiments of the invention include a particle detection system that includes a light emitting source, a non-collimating reflector, a collimating reflector, and a detector. Light from the light emitting source is directed by the non-collimating reflector to an area through which a particle stream may be transmitted. Fluorescent light from the light striking particles is redirected to the collimating reflector and then on to the detector. Other embodiments include a single pump used to pull a pair of fluid flows through the detection system. Other embodiments include a plurality of light emitting sources whose light is directed to a particle stream by a single reflector. Other embodiments include a method for detecting particles.
摘要翻译： 本发明的实施例包括一种粒子检测系统，其包括发光源，非准直反射器，准直反射器和检测器。 来自发光源的光由非准直反射器引导到可以传播颗粒物流的区域。 来自光撞击颗粒的荧光被重定向到准直反射器，然后被引导到检测器上。 其他实施例包括用于拉动一对流体流过检测系统的单个泵。 其他实施例包括多个发光源，其光通过单个反射器被引导到颗粒流。 其他实施方案包括用于检测颗粒的方法。
-
公开(公告)号：US08697506B2
公开(公告)日：2014-04-15
申请号：US13418566
申请日：2012-03-13
申请人： Vinayak Tilak , Alexei Vertiatchikh , Kevin Sean Matocha , Peter Micah Sandvik , Siddharth Rajan
发明人： Vinayak Tilak , Alexei Vertiatchikh , Kevin Sean Matocha , Peter Micah Sandvik , Siddharth Rajan
IPC分类号： H01L21/335
CPC分类号： H01L29/7787 , H01L29/2003 , H01L29/207
摘要： A method of manufacturing a heterostructure device is provided that includes implantation of ions into a portion of a surface of a multi-layer structure. Iodine ions are implanted between a first region and a second region to form a third region. A charge is depleted from the two dimensional electron gas (2DEG) channel in the third region to form a reversibly electrically non-conductive pathway from the first region to the second region. On applying a voltage potential to a gate electrode proximate to the third region allows electrical current to flow from the first region to the second region.
摘要翻译： 提供了一种制造异质结构器件的方法，其包括将离子注入到多层结构的表面的一部分中。 碘离子注入第一区域和第二区域之间以形成第三区域。 电荷从第三区域中的二维电子气（2DEG）通道中消耗，以形成从第一区域到第二区域的可逆的非导电通路。 在向靠近第三区域的栅电极施加电压电位时，允许电流从第一区域流到第二区域。
-
公开(公告)号：US08159002B2
公开(公告)日：2012-04-17
申请号：US11961532
申请日：2007-12-20
申请人： Vinayak Tilak , Alexei Vertiatchikh , Kevin Sean Matocha , Peter Micah Sandvik , Siddharth Rajan
发明人： Vinayak Tilak , Alexei Vertiatchikh , Kevin Sean Matocha , Peter Micah Sandvik , Siddharth Rajan
IPC分类号： H01L29/66
CPC分类号： H01L29/7787 , H01L29/2003 , H01L29/207
摘要： A heterostructure device includes a semiconductor multi-layer structure that has a first region, a second region and a third region. The first region is coupled to a source electrode and the second region is coupled to a drain electrode. The third region is disposed between the first region and the second region. The third region provides a switchable electrically conductive pathway from the source electrode to the drain electrode. The third region includes iodine ions. A system includes a heterostructure field effect transistor that includes the device.
摘要翻译： 异质结构器件包括具有第一区域，第二区域和第三区域的半导体多层结构。 第一区域耦合到源电极，第二区域耦合到漏电极。 第三区域设置在第一区域和第二区域之间。 第三区域提供从源电极到漏电极的可切换导电路径。 第三区域包括碘离子。 一种系统包括包括该器件的异质结构场效应晶体管。
-
公开(公告)号：US20090159929A1
公开(公告)日：2009-06-25
申请号：US11961532
申请日：2007-12-20
申请人： Vinayak Tilak , Alexei Vertiatchikh , Kevin Sean Matocha , Peter Micah Sandvik , Siddharth Rajan
发明人： Vinayak Tilak , Alexei Vertiatchikh , Kevin Sean Matocha , Peter Micah Sandvik , Siddharth Rajan
IPC分类号： H01L29/78 , H01L21/335
CPC分类号： H01L29/7787 , H01L29/2003 , H01L29/207
摘要： A heterostructure device includes a semiconductor multi-layer structure that has a first region, a second region and a third region. The first region is coupled to a source electrode and the second region is coupled to a drain electrode. The third region is disposed between the first region and the second region. The third region provides a switchable electrically conductive pathway from the source electrode to the drain electrode. The third region includes iodine ions. A system includes a heterostructure field effect transistor that includes the device.
摘要翻译： 异质结构器件包括具有第一区域，第二区域和第三区域的半导体多层结构。 第一区域耦合到源电极，第二区域耦合到漏电极。 第三区域设置在第一区域和第二区域之间。 第三区域提供从源电极到漏电极的可切换导电路径。 第三区域包括碘离子。 一种系统包括包括该器件的异质结构场效应晶体管。
-
公开(公告)号：US20070098029A1
公开(公告)日：2007-05-03
申请号：US11260415
申请日：2005-10-27
申请人： Steven LeBoeuf , Radislav Potyrailo , William Huber , Rui Chen , Todd Tolliver , Alexei Vertiatchikh
发明人： Steven LeBoeuf , Radislav Potyrailo , William Huber , Rui Chen , Todd Tolliver , Alexei Vertiatchikh
CPC分类号： H01S3/0959 , H01S3/16 , H01S3/169
摘要： A device for emission of electromagnetic radiation comprises a source of atomic particles and a collector disposed to receive atomic particles from the source. The collector comprises an emission medium, the medium comprising a crystal having a spatial dimension in the range from about 10 nanometers to about 50 micrometers, wherein the emission medium has the capability to generate opposing charge pairs upon absorption of atomic particles from the source and to emit electromagnetic radiation upon recombination of the pairs. The emission may be via spontaneous emission or, in certain embodiments, by stimulated emission. A laser assembly comprising this device, and methods for making the device are also presented herein.
摘要翻译： 用于发射电磁辐射的装置包括原子粒子源和设置成从源极接收原子粒子的收集器。 所述收集器包括发射介质，所述介质包括具有在约10纳米至约50微米范围内的空间尺寸的晶体，其中所述发射介质具有在从所述源吸收原子粒子时产生相反电荷对的能力， 在配对的复合时发射电磁辐射。 发射可以通过自发发射，或者在某些实施方案中，通过受激发射。 包括该装置的激光组件以及用于制造该装置的方法也在本文中呈现。
-
公开(公告)号：US20120171824A1
公开(公告)日：2012-07-05
申请号：US13418566
申请日：2012-03-13
申请人： Vinayak Tilak , Alexei Vertiatchikh , Kevin Sean Matocha , Peter Micah Sandvik , Siddharth Rajan
发明人： Vinayak Tilak , Alexei Vertiatchikh , Kevin Sean Matocha , Peter Micah Sandvik , Siddharth Rajan
IPC分类号： H01L21/335
CPC分类号： H01L29/7787 , H01L29/2003 , H01L29/207
摘要： A method of manufacturing a heterostructure device is provided that includes implantation of ions into a portion of a surface of a multi-layer structure. Iodine ions are implanted between a first region and a second region to form a third region. A charge is depleted from the two dimensional electron gas (2DEG) channel in the third region to form a reversibly electrically non-conductive pathway from the first region to the second region. On applying a voltage potential to a gate electrode proximate to the third region allows electrical current to flow from the first region to the second region.
摘要翻译： 提供了一种制造异质结构器件的方法，其包括将离子注入到多层结构的表面的一部分中。 碘离子注入第一区域和第二区域之间以形成第三区域。 电荷从第三区域中的二维电子气（2DEG）通道中消耗，以形成从第一区域到第二区域的可逆的非导电通路。 在向靠近第三区域的栅电极施加电压电位时，允许电流从第一区域流到第二区域。
-
公开(公告)号：US20090140293A1
公开(公告)日：2009-06-04
申请号：US11946959
申请日：2007-11-29
申请人： Alexei Vertiatchikh , Kevin Sean Matocha , Peter Micah Sandvik , Vinayak Tilak , Siddharth Rajan , Ho-Young Cha
发明人： Alexei Vertiatchikh , Kevin Sean Matocha , Peter Micah Sandvik , Vinayak Tilak , Siddharth Rajan , Ho-Young Cha
IPC分类号： H01L29/778
CPC分类号： H01L29/7786 , H01L29/2003
摘要： A heterostructure device or article includes a carrier transport layer, a back channel layer and a barrier layer. The carrier transport layer has a first surface and a second surface opposing to the first surface. The back channel layer is secured to the first surface of the carrier transport layer and the barrier layer is secured to the second surface of the carrier transport layer. Each of the carrier transport layer, the back channel layer and the barrier layer comprises an aluminum gallium nitride alloy. The article further includes a 2D electron gas at an interface of the second surface of the carrier transport layer and a surface of the barrier layer. The 2D electron gas is defined by a bandgap differential at an interface, which allows for electron mobility. A system includes a heterostructure field effect transistor that includes the article.
摘要翻译： 异质结构器件或制品包括载流子传输层，背沟道层和阻挡层。 载流子传输层具有与第一表面相对的第一表面和第二表面。 背沟道层被固定到载流子传输层的第一表面，并且阻挡层固定到载流子传输层的第二表面。 载流子传输层，背沟道层和阻挡层中的每一个包括氮化镓铝合金。 该制品还包括在载流子传输层的第二表面和势垒层的表面的界面处的2D电子气体。 2D电子气体由界面处的带隙差分限定，这允许电子迁移率。 一种系统包括包括该物品的异质结构场效应晶体管。
-
公开(公告)号：US20070228385A1
公开(公告)日：2007-10-04
申请号：US11396027
申请日：2006-04-03
申请人： XianAn Cao , Steven Leboeuf , Alexei Vertiatchikh
发明人： XianAn Cao , Steven Leboeuf , Alexei Vertiatchikh
IPC分类号： H01L33/00
摘要： An edge-emitting light emitting diode (EELED) and methods are described. The EELED includes contact layer, a first carrier confinement layer coupled to the contact layer, an active region optically coupled to the first carrier confinement layer. The active region includes an aluminum gallium nitride based material. Further, the EELED includes a second carrier confinement layer coupled to the active region.
摘要翻译： 描述了边缘发光发光二极管（EELED）和方法。 EELED包括接触层，耦合到接触层的第一载流子限制层，光耦合到第一载流子限制层的有源区。 有源区包括氮化铝基材料。 此外，EELED包括耦合到有源区的第二载流子限制层。
-
-
-
-
-
-
-
搜索结果
8 条记录 (耗时 0.011 秒)