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22 条记录 (耗时 0.017 秒)

    Device for pulling a single crystal
    1.
    发明授权
    Device for pulling a single crystal 有权
    用于拉单晶的装置

    公开(公告)号：US08470093B2

    公开(公告)日：2013-06-25

    申请号：US12560656

    申请日：2009-09-16

    申请人： Andreas Muehe ,  Alfred Miller ,  Johann-Andreas Huber

    发明人： Andreas Muehe ,  Alfred Miller ,  Johann-Andreas Huber

    IPC分类号： C30B15/02

    CPC分类号： C30B15/30 ,  Y10T117/1072

    摘要： A device for pulling a single crystal from a melt having a widened portion between an upper and a lower neck portion including a pulling device having a pulling device cable drum configured to wind a pulling cable, the pulling cable configured to pull the single crystal and a supporting device configured to relieve the upper neck portion of a weight of the single crystal.

    摘要翻译： 一种用于从具有在上部和下部颈部之间具有加宽部分的熔体拉出单晶的装置，包括具有牵引装置电缆鼓的牵引装置，该牵引装置构造成牵引牵引电缆，所述牵引电缆被构造成拉动所述单晶和 支撑装置，其构造成减轻所述单个晶体的重量的所述上颈部。

    Helical liquid crystalline element which produces linear polarized light
    2.
    发明授权
    Helical liquid crystalline element which produces linear polarized light 失效
    产生线性偏振光的螺旋液晶元件

    公开(公告)号：US5301045A

    公开(公告)日：1994-04-05

    申请号：US961299

    申请日：1992-10-15

    申请人： Alfred Miller ,  Franz-Heinrich Kreuzer ,  Horst Leigeber ,  Christoph Brauchle ,  Andreas Petri

    发明人： Alfred Miller ,  Franz-Heinrich Kreuzer ,  Horst Leigeber ,  Christoph Brauchle ,  Andreas Petri

    IPC分类号： C09K19/02 ,  C09K19/40 ,  G02B5/30 ,  G02F1/13 ,  G11B7/24 ,  G02F1/1335

    CPC分类号： G02B5/3016 ,  C09K19/408 ,  G11B7/24

    摘要： The invention relates to optical elements based on helical liquid-crystalline substances, having reflection bands of linear-polarized light, and to a process for preparing the same. The optical elements of this invention contain only one optically effective component based on helical liquid-crystalline substances. They reflect light incident perpendicular to the surface in a linear-polarized manner parallel to the direction of incidence of the incident light. The process for preparing the optical elements comprises illuminating a helical liquid-crystalline substance which contains at least one photoisomerizable substance with linear-polarized light in such a manner that this substance is subsequently aligned so that it exhibits at least one reflection band of linear-polarized light on illumination. Suitable helical liquid-crystalline substances are in particular organopolysiloxanes. The optical elements are suitable, for example, for data storage.

    摘要翻译： 本发明涉及基于具有线性偏振光的反射带的螺旋液晶物质的光学元件及其制备方法。 本发明的光学元件仅含有基于螺旋液晶物质的一种光学有效成分。 它们以与入射光的入射方向平行的线性偏振方式反射垂直于表面的光入射。 制备光学元件的方法包括以线性偏振光照射含有至少一种光可异构化物质的螺旋液晶物质，使得该物质随后对准，使得其呈现线性极化的至少一个反射带 照亮照明。 合适的螺旋液晶物质特别是有机聚硅氧烷。 光学元件例如适用于数据存储。

    Method for producing semiconductor wafers composed of silicon having a diameter of at least 450 mm, and semiconductor wafer composed of silicon having a diameter of 450 mm
    5.
    发明授权
    Method for producing semiconductor wafers composed of silicon having a diameter of at least 450 mm, and semiconductor wafer composed of silicon having a diameter of 450 mm 有权
    由直径为450mm以上的硅构成的半导体晶片的制造方法以及由直径为450mm的硅构成的半导体晶片

    公开(公告)号：US08357590B2

    公开(公告)日：2013-01-22

    申请号：US13005584

    申请日：2011-01-13

    申请人： Georg Raming ,  Walter Heuwieser ,  Andreas Sattler ,  Alfred Miller

    发明人： Georg Raming ,  Walter Heuwieser ,  Andreas Sattler ,  Alfred Miller

    IPC分类号： H01L21/46

    CPC分类号： C30B15/203 ,  C30B15/14 ,  C30B29/06 ,  Y10T428/21

    摘要： Silicon semiconductor wafers are produced by: pulling a single crystal with a conical section and an adjoining cylindrical section having a diameter ≧450 mm and a length of ≧800 mm from a melt in a crucible, wherein in pulling the transition from the conical section to the cylindrical section, the pulling rate is at least 1.8 times higher than the average pulling rate during the pulling of the cylindrical section; cooling the growing single crystal with a cooling power of at least 20 kW; feeding heat from the side wall of the crucible to the single crystal, wherein a gap having a height of ≧70 mm is present between a heat shield surrounding the single crystal and the melt surface.

    摘要翻译： 硅半导体晶片通过以下步骤制造：将具有锥形截面的单晶和与坩埚中的熔体直径≥450mm和长度≥800mm的相邻的圆柱形部分拉制，其中，从锥形截面向 圆柱形部分的拉伸速度比拉伸圆筒部分的平均拉拔速度高至少1.8倍; 以至少20kW的冷却功率冷却生长中的单晶; 从坩埚的侧壁向单晶供给热量，其中在围绕单晶的隔热罩和熔体表面之间存在高度为≥70mm的间隙。

    SOI wafer and method for producing it
    6.
    发明授权
    SOI wafer and method for producing it 有权
    SOI晶片及其制造方法

    公开(公告)号：US08323403B2

    公开(公告)日：2012-12-04

    申请号：US12016225

    申请日：2008-01-18

    申请人： Dieter Graef ,  Markus Blietz ,  Reinhold Wahlich ,  Alfred Miller ,  Dirk Zemke

    发明人： Dieter Graef ,  Markus Blietz ,  Reinhold Wahlich ,  Alfred Miller ,  Dirk Zemke

    IPC分类号： C30B29/06

    CPC分类号： H01L21/76254 ,  C30B15/00 ,  C30B15/20 ,  C30B29/06 ,  H01L21/3226

    摘要： An SOI wafer is constructed from a carrier wafer and a monocrystalline silicon layer having a thickness of less than 500 nm, an excess of interstitial silicon atoms prevailing in the entire volume of the silicon layer. The SOI wafers may be prepared by Czochralski silicon single crystal growth, the condition v/G

    摘要翻译： SOI晶片由载体晶片和厚度小于500nm的单晶硅层构成，在硅层的整个体积中存在过量的间隙硅原子。 可以通过Czochralski硅单晶生长制备SOI晶片，在整个晶体截面处在结晶前沿满足条件v / G <（v / G）crit = 1.3×10 -3 cm 2 /（K·min） ，结果是在所生成的硅单晶中存在过量的间隙硅原子; 从该硅单晶分离至少一个施主晶片，将施主晶片与载体晶片的接合以及施主晶片的厚度的减小，结果是厚度小于500nm的硅层与 载体晶片残留。

    Method For Producing Semiconductor Wafers Composed Of Silicon Having A Diameter Of At Least 450 mm, and Semiconductor Wafer Composed Of Silicon Having A Diameter of 450 mm
    7.
    发明申请
    Method For Producing Semiconductor Wafers Composed Of Silicon Having A Diameter Of At Least 450 mm, and Semiconductor Wafer Composed Of Silicon Having A Diameter of 450 mm 有权
    用于制造直径最小为450mm的由半导体芯片制成的半导体晶片的方法以及由直径为450mm的硅组成的半导体晶片

    公开(公告)号：US20110175202A1

    公开(公告)日：2011-07-21

    申请号：US13005584

    申请日：2011-01-13

    申请人： Georg Raming ,  Walter Heuwieser ,  Andreas Sattler ,  Alfred Miller

    发明人： Georg Raming ,  Walter Heuwieser ,  Andreas Sattler ,  Alfred Miller

    IPC分类号： H01L29/36 ,  C30B15/22

    CPC分类号： C30B15/203 ,  C30B15/14 ,  C30B29/06 ,  Y10T428/21

    摘要： Silicon semiconductor wafers are produced by: pulling a single crystal with a conical section and an adjoining cylindrical section having a diameter ≧450 mm and a length of ≧800 mm from a melt in a crucible, wherein in pulling the transition from the conical section to the cylindrical section, the pulling rate is at least 1.8 times higher than the average pulling rate during the pulling of the cylindrical section; cooling the growing single crystal with a cooling power of at least 20 kW; feeding heat from the side wall of the crucible to the single crystal, wherein a gap having a height of ≧70 mm is present between a heat shield surrounding the single crystal and the melt surface.

    摘要翻译： 硅半导体晶片通过以下步骤制造：将具有锥形截面的单晶和与坩埚中的熔体直径≥450mm和长度≥800mm的相邻的圆柱形部分拉制，其中，从锥形截面向 圆柱形部分的拉伸速度比拉伸圆筒部分的平均拉拔速度高至少1.8倍; 以至少20kW的冷却功率冷却生长中的单晶; 从坩埚的侧壁向单晶供给热量，其中在围绕单晶的隔热罩和熔体表面之间存在高度为≥70mm的间隙。

    Prefabricated form for fireproofing structural steel and method of use
    8.
    发明授权
    Prefabricated form for fireproofing structural steel and method of use 有权

    公开(公告)号：US10533318B1

    公开(公告)日：2020-01-14

    申请号：US15892910

    申请日：2018-02-09

    申请人： Alfred Miller Contracting Company

    发明人： Philip Glen Miller ,  Robert Brooks Pool

    IPC分类号： E04B1/94 ,  E04C3/06

    摘要： A prefabricated formed edge guide for fireproofing a structural steel member and method of use is disclosed, which includes a formed edge, a set of mesh surfaces attached to the formed edge, and a thickness formed by the formed edge and the set of mesh surfaces. A fireproofed structure is disclosed that includes a member including a set of surfaces, a set of the preformed edge guides attached to the set of surfaces, and a fireproofing thickness formed by the formed edge and the set of mesh surfaces. A fireproofing material is adhered to the member using the set of preformed edge guides and the fireproofing thickness to create the fireproofed structure. The fireproofing material may be applied in one single layer or in successive layers.